一种新的HBT小信号模型参数优化提取法

阐述了一种新的异质结双极型晶体管（HBT）的小信号模型参数提取方法――综合多偏置点优化参数提取法. 对HBT小信号模型进行推导并确定外部参数和内部参数的计算公式;介绍了多偏置点优化算法,并在GaInP/ GaAs HBT器件上进行了鲁棒性和精确性测试. 实验采用了一系列随机初始值,结果表明提取的参数值具有唯一收敛性和精确性,仿真结果与测量数据的相对误差小于1%.     

A robust integrated multibias parameter-extraction method forMESFET and HEMT models

An integrated multibias extraction technique for MESFET and high electron-mobility transistor (HEMT) models is presented in this paper. The technique uses S-parameters measured at various bias points in the active region to construct one optimization problem, of which the vector of unknowns contains a set of bias-dependent elements for each bias point and one set of bias-independent elements. This problem is solved by an extremely robust decomposition-based optimizer, which splits the problem into n subproblems, n being the number of unknowns. The optimizer consistently converges to the same solution from a wide range of randomly chosen starting values. No assumptions are made concerning the layout of the device or the bias dependencies of the intrinsic model elements. It is shown that there is a convergence in the values of the model elements and a decrease in the extraction uncertainty as the number of bias points in the extraction is increased. Robustness tests using 100 extractions, each using a different set of random starting values, are performed on measured S-parameters of a MESFET and pseudomorphic HEMT device. Results indicate that the extracted parameters typically vary by less than 1%. Extractions with up to 48 bias points were performed successfully, leading to the simultaneous determination of 342 model elements     

一种新的HEMT小信号模型参数提取方法

介绍了一种高电子迁移率晶体管(HEMT)的小信号参数提取方法——综合多偏置点优化参数提取法。该文首先推导并提出了器件的模型、确定外部参数和内部参数，其次介绍了多偏置点优化算法。最后，以PHEMT器件为例进行鲁棒性和精确性测试，实验采用一系列随机起始值，结果表明，提取的参数值与经验值相差小于1％。     

Optimal parameter extraction and uncertainty estimation in intrinsic FET small-signal models

Analytical expressions for the relative sensitivities in the parameters of a standard intrinsic FET small-signal model with respect to deviations in the measured S-parameters are derived. This enables, in combination with a measurement uncertainty model, the model parameter uncertainties to be studied versus frequency. As a result, optimal, minimum uncertainty, parameter extraction can be performed independent of the bias voltage and without prior knowledge about the device frequency behavior, thus making it suitable for implementation in automatic multibias extraction programs. The derived sensitivities are furthermore used to analytically calculate the uncertainty in the S-parameter response of the extracted model in terms of the uncertainties in either the parameters or the measurement it was extracted from.     

Parameter extraction technique for HBT equivalent circuit usingcutoff mode measurement

A parameter extraction method based on the S-parameter measurements of the heterojunction bipolar transistors (HBTs) biased to cutoff is proposed. This method is applied to confirm the results for the RF probe pad and interconnection pattern parasitics obtained from the special test structures, and to determine some of the device capacitances of the HBT. The remaining device parameters are extracted by the S-parameter measurements of the devices biased to the active mode. The extraction technique gives good agreement between the equivalent circuit and the measured S-parameters of the HBT including probe pads and interconnections     

A New Extraction Technique for the Complete Small-Signal Equivalent-Circuit Model of InGaP/GaAs HBT Including Base Contact Impedance and AC Current Crowding Effect

In this paper, both ac current crowding and base contact impedance are considered and included in the T-type small-signal equivalent circuit of InGaP/GaAs heterojunction bipolar transistors. The ac current crowding effect and base contact impedance are modeled as a parallel$RC$circuit, respectively. Devices parameters of the equivalent circuit are obtained by a new parameters extraction technique. The technique is to directly analyze the two-port parameters of multibias conditions (cutoff-bias, open-collector, and active-bias modes). The parallel capacitances ($C_B$and$C_ bi$), base resistances ($R_B$and$R_ bi$), and base inductance$(L_B)$are especially determined under the active-bias mode without numerical optimization. In addition, the small-signal equivalent circuits of cutoff-bias and open-collector modes are directly derived from the active-bias mode circuit for consistency. By considering base contact impedance and intrinsic base impedance effects in the presented small-signal equivalent circuit, the calculated$S$-parameters agree well with the measured$S$-parameters. The observed difference in the slope for the unilateral power gain$(U)$versus frequency at high frequency is mainly attributed to the ac emitter current crowding effect and well modeled in this study.     

A new parameter extraction technique for small-signal equivalentcircuit of polysilicon emitter bipolar transistors

We propose a new parameter extraction method for advanced polysilicon emitter bipolar transistors. This method is based on the predetermination of equivalent circuit parameters using the analytical expressions of de-embedded Z-parameters of these devices. These parameter values are used as initial values for the parameter extraction process using optimization. The entire device equivalent circuit, containing RF probe pad and interconnection circuit parameters extracted by test structures, is optimized to fit measured S-parameters for eliminating de-embedding errors due to the imperfection of pad and interconnection test structures. The equivalent circuit determined by this method shows excellent agreement with the measured S-parameters from 0.1 to 26.5 GHz     

Small-signal model parameter extraction of E-mode N-polar GaN MOS-HEMT using optimization algorithms and its comparison

An improved small-signal parameter extraction technique for short channel enhancement-mode N-polar GaN MOS-HEMT is proposed,which is a combination of a conventional analytical method and optimization techniques.The extrinsic parameters such as parasitic capacitance,inductance and resistance are extracted under the pinch-off condition.The intrinsic parameters of the small-signal equivalent circuit (SSEC) have been extracted including gate forward and backward conductance.Different optimization algorithms such as PSO,Quasi Newton and Firefly optimization algorithm is applied to the extracted parameters to minimize the error between modeled and measured S-parameters.The different optimized SSEC models have been validated by comparing the S-parameters and unity current-gain with TCAD simulations and available experimental data from the literature.It is observed that the Firefly algorithm based optimization approach accurately extracts the small-signal model parameters as compared to other optimization algorithm techniques with a minimum error percentage of 1.3％.     

Analytical parameter extraction of the HBT equivalent circuit withT-like topology from measured S-parameters

A pure analytical method for extraction of the small-signal equivalent circuit parameters from measured data is presented and successfully applied to heterojunction bipolar transistors (HBT's). The T-like equivalent circuit is cut into three shells accounting for the connection, and the extrinsic and intrinsic parts of the transistor. The equivalent circuit elements are evaluated in a straightforward manner from impedance and admittance representation of the measured S-parameters. The measured data are stripped during the extraction process yielding, step by step, a full set of circuit elements without using fit methods. No additional knowledge of the transistor is needed to start the extraction process with its self-consistent iteration loop for the connection shell. The extrinsic and intrinsic equivalent circuit elements are evaluated using their bias and frequency dependencies. This method yields a deviation of less then 4% between measured and modeled S-parameters     

Slit coupled E-plane rectangular T-junctions using single port modematching technique

A new simple mode matching method, called single port mode matching technique (SPMMT) for modeling rectangular waveguide T-junctions is presented. The reflection coefficient at port 2 (side arm of the T-junction) is computed with both ports 1 and 3 shorted. The three-port scattering matrix of the T-junction is obtained from nine reflection coefficient computations using different short circuit lengths in ports 1 and 3. This method is rigorous, simple, reduces the computational effort significantly and can be applied to other structures. Comparison of S-parameters with classical equivalent circuit in Marcuvitz(1951) and new equivalent circuit given by Lampariello and Oliner(1993) is presented. Dependence of S-parameters on the slit thickness is also given. Open T-junctions are analyzed as a special case of the slit T-junction, and the results are in good agreement with experimental measurements     

A small-signal RF model and its parameter extraction for substrateeffects in RF MOSFETs

We propose a physically acceptable small-signal model incorporating substrate effects, in order to eliminate the severe frequency-dependence of the intrinsic drain-source resistance observed from a conventional model of RF Si MOSFETs. This model is based on the substrate network where a parallel RC circuit is connected in series with the drain junction capacitance. It is demonstrated that the substrate effects result in the frequency-dispersion of the effective drain-source resistance and capacitance below 10 GHz. An accurate extraction technique using a simple curve-fit approach is developed to determine substrate parameters directly, and their bulk voltage-dependencies are presented in detail. The validity of this model is partially proved by finding intrinsic parameters exhibiting frequency-independence up to 10 GHz. Better agreement with measured S-parameters is achieved by using the new substrate model rather than the conventional one, verifying the accuracy of the physical model and extraction technique     

用Cauer网络综合技术提取PBG等效电路模型

本文从全波场分析结果出发,提取了PBG单元结构的集总等效有耗电路模型。对每个PBG单元采用时域有限差分（FDTD）方法进行全波分析,然后用Cauer部分分式展开形式和网络综合技术,由全波分析结果提取等效有损电路模型参数,并将提取获得的PBG单元等儿电路模型嵌入HP－ADS软件对整个PBG结构进行SPICE分析,得到的散射参量和全波分析结果比较基本一致,证明了该模型的准确性。这种模型可以嵌入电路分析和设计软件中,用来对应用了PBG结构的无源和有源电路进行优化与设计。     

Multibias scalable HEMT small-signal modeling based on a hybrid direct extraction/particle swarm optimization approach

A new multibias HEMT small-signal model extraction method is proposed. The approach, based on scaling rules, combines direct extraction techniques and a particle swarm optimization algorithm. This method has been successfully tested with PHEMTs and MHEMTs, leading to accurate and scalable models up to 70 and 120 GHz, respectively.     

A pure analytic method for direct extraction of collector-up HBT's small-signal parameters

A pure analytic procedure for direct extraction of the small-signal equivalent-circuit parameters, including extrinsic inductances, has been demonstrated and successfully applied to III-V and SiGe collector-up heterojunction bipolar transistors (HBTs). This method can alleviate some difficulties encountered among conventional extracting techniques that are the use of additional test structures, forward-biased measurements at specific bias conditions, and empirical optimization process. In this paper, the hybrid-/spl pi/ equivalent-circuit elements are extracted in a simple and efficient way from impedance and admittance formulation on the basis of measured S-parameters. To study the bias dependence, the extrinsic and intrinsic circuit components are evaluated under different bias conditions. The model parameters are sequentially derived during the extraction process yielding a full set of physical element values. The validity of our model is explored on pnp collector-up AlGaAs-InGaAs HBTs, and a good coincidence between measured and modeled S-parameters is observed for the entire frequency range of operation. Consistent extracted trends indicate that this improved equivalent-circuit model is suitable to be implemented in circuit simulators for microwave-circuit TCAD applications.     

A parameter extraction method using cutoff measurement for alarge-scale HSPICE model of HBT's

We present an accurate parameter extraction method for the HBT large-signal equivalent circuit model in which several extrinsic parasitics are connected to HSPICE BJT model. The measured Gummel plot are used to extract DC model parameters of HBT using HSPICE. Capacitances are then obtained from S-parameter measurements of the HBTs biased to cutoff. The other parameters are determined from the active device S-parameters. The large-signal modeled Gummel plot and S-parameters show good agreement with the measured ones, respectively     

CRLH-TL激励源的设置和S参数的提取计算

该文使用两种全波分析法对传统的带阻滤波器和一维复合左右手传输线(Composite Right/left-handed Transmission Line CRLH-TL)进行了数值分析,解决了多端口激励源的设置和多端口S参数提取的两大难点,计算结果分别与FEKO和电路模型等效法的分析结论进行了比较,吻合较好;并通过增加CRLH单元数得出电路模型等效法的不足,不仅验证了此激励源设置和S参数提取的正确性,也得出了CRLH-TL不同于传统右手传输线的一些左手特性,为分析、优化CRLH传输线以及CRLH漏波天线提供了一定的理论支持。     

An approach to determining an equivalent circuit for HEMTs

A simple way to determine a small-signal equivalent circuit of High Electron Mobility Transistors (HEMTs) is proposed. Intrinsic elements determined by a conventional analytical parameter transformation technique are described as functions of extrinsic elements. Assuming that the equivalent circuit composed of lumped elements is valid over the whole frequency range of the measurements, the extrinsic elements are iteratively determined using the variance of the intrinsic elements as an optimization criterion. Measurements of S-parameters up to 62.5 GHz at more than 100 different bias points confirmed that the HEMT equivalent circuit is consistent for all bias points     

A semianalytical parameter extraction of a SPICE BSIM3v3 for RFMOSFET's using S-parameters

In this paper, we present a new parameter-extraction method combining analytical and optimization approaches for the RF large-signal Berkeley Short-Channel IGFET Model 3, Version 3.0. Using S-parameters of MOSFET's with different channel lengths and widths at zero gate bias, all overlap capacitances are accurately determined in the high-frequency range. The junction-capacitance model parameters are extracted using S-parameters of devices with different perimeter-to-area ratios at two different biases of zero and high voltages. A robust technique utilizing simple Z-parameter equations is also used to extract resistances (R_g and R_d) and inductances. The source and substrate resistances are initially determined using the zero-bias optimization, and their uncertainties are subsequently eliminated in the normal-bias optimization. Good agreements between measured and modeled S-parameters from 0.5 to 12 GHz demonstrate the validity of this semianalytical method     

射频CMOS平面螺旋电感2-π等效电路模型参数的提取

从有理分式拟合方法出发,提出了用于射频CMOS平面螺旋电感2-π等效电路模型参数提取的新方法.通过比较提参后等效电路给出的S参数和实验测量的S参数,证明该方法的精度很高.此外,提参的策略非常直接,因此容易在CAD里面编程实现.提参得到的等效电路模型对于射频电路设计者来说也是非常有用的.     

Modeling and characterization of an 80 V silicon LDMOSFET foremerging RFIC applications

This paper describes the design and optimization of an 80 V silicon RF LDMOSFET used in a power amplifier for base station applications. The transistor was prototyped using the doping profiles extracted from an experimental device and extensive two-dimensional (2-D) simulations were performed to characterize the DC and RF performance of the device. A good match between the measured and simulated data is reported. A simple circuit model was developed which accurately predicts the DC and RF characteristics in circuit simulators. It is shown through 2-D simulations that the LDD region in the LDMOSFET can be modeled as a JFET. A methodology for the accurate extraction of model parameters for the circuit model is discussed. It is shown that the DC and RF performances of the circuit model closely match the measured data. Advanced mixed device and circuit simulations were used to obtain S-parameters of the device which provide new insights into device physics and also the basis for statistical process control studies