高铁场景下基于LOS径的多普勒频偏估计研究

高速移动场景下,用户与基站之间的相对速度非常高,这会产生较大的多普勒频偏,引起OFDM系统子载波正交性。本文研究了Moose算法,并在此基础上结合高铁信道特征提出一种新的基于LOS径的多普勒频偏估计方法,仿真结果显示估计性能较原方法有明显的改善。     

TDD-LTE下行高速移动场景中的频偏估计方法

针对TDD-LTE系统下行链路高速移动场景提出了一种小数倍频偏估计算法,该算法利用主同步信道(P-SCH)和辅同步信道(S-SCH)的频域信道估计值的共轭相关来估计载波频率的小数倍偏移.理论分析与仿真结果表明所提出算法的估计范围能够覆盖高速移动场景中的最大小数倍频偏,同时仿真结果也表明所提算法在加性高斯白噪声信道(AW...     

高速移动环境下TD-SCDMA系统组网方案研究

本文针对TD-SCDMA网络高速移动环境下的组网问题,分析了高速移动对系统性能可能产生的各类影响,包括多普勒频移对解调性能影响、智能天线赋形、功率控制和同步、网络切换、重选及车体穿透损耗的影响;结合频偏校正算法,给出了满足覆盖质量和切换要求的基站布局原则,并对专网和大网两种组网方式进行了分析比较。     

卫星移动通信中利用Chirp信号进行时频同步的算法

卫星移动通信中信号受到多普勒效应和阴影衰落效应的影响,导致信号变化快且很微弱,对系统接收性能影响很大.提出一种用于卫星移动通信终端下行链路时频同步新算法.根据本地扫频信号与接收Chirp信号相关后峰值频率变化规律来进行定时捕获,同时实现了频偏估计.通过仿真和分析,给出了不同信噪比环境下,利用Chirp信号进行定时捕获和频偏估计的性能.结果表明,在阴影衰落导致的信噪比很低和高速移动导致的多普勒频偏的情况下,定时捕获性能优越,频偏估计性能很好地满足系统要求.     

高速移动条件下的多普勒频移估计与校正

在遥测遥控通信系统中,经常会遇到发射机或接收机具有很高的移动速度。这将导致接收机接收到的数据包含很大的多普勒（Doppler）频移。多普勒效应使得接收数据的相位发生旋转,这将造成接收信号无法正确解调。对高速移动条件下的数字通信系统中存在的多普勒频移问题进行研究,并对盲估计算法与训练序列估计算法的性能进行比较与分析,并对采用训练序列算法估计频偏和相偏的FPGA实现过程中存在的主要问题进行讨论并提出解决方案。最后,仿真结果表明,所提到的硬件实现算法能够很好地估计和校正频偏与相偏。     

面向高速移动通信系统的载波同步技术

针对高速移动通信系统大多普勒频偏和导频资源受限条件下的载频同步问题,提出了一种级联递进载波同步方法.首先利用数据帧首尾导频块估计与校正接收信号多普勒频率变化率;然后设计了基于多级自相关运算的高精度多普勒频偏估计模型;最后采用三阶锁相环跟踪剩余的多普勒变化率和频率偏移.仿真结果表明,该方法多普勒频率变化率校正满足载波同步...     

高速移动环境下基于多天线角域分辨力接收算法

在高速移动环境下,OFDM系统由于信道的时变性破坏了子载波间的正交性,而使系统性能急剧下降。针对此问题,该文分析了高速移动产生的信号多普勒扩展的数学模型,提出了一种基于多天线角域分辨力接收算法。该算法采用正交角域子空间投影,将多普勒扩展简化为各个正交角域空间上的多普勒频移,并通过多普勒参数估计来抑制时变信道对系统性能的影响。仿真结果表明,在高速移动环境下,该文提出的算法有效地抑制了OFDM系统中子载波间干扰,获得了较好的系统性能。     

OFDM系统中的ICI干扰消除技术

针对高速移动环境下多普勒频偏造成移动信道的快衰落和正交频分复用OFDM系统中子载波间干扰（ICI）问题,本文给出了OFDM系统中的多种ICI干扰消除技术。     

LTE中一种基于高速铁路场景的信道估计方法

LTE系统在下行采用了OFDM技术。OFDM技术将高速数据流调制到相互正交的N路子载波上,因此易受频偏的影响,尤其在多普勒频偏较大的高速环境下会受到严重的干扰。本文依托LTE系统,提出一种针对高速铁路场景的信道估计方法,在基于最小二乘(least squares,LS)估计的基础上,针对高速移动环境提出相应的处理方法,包括基于循环前缀(cyclic prefix,CP)的频偏估计和时域能量集中等处理,仿真分析结果表明,与传统方法相比更适合高速场景,在车速达到500 km/h时仍然保持良好的误码率,具有一定的实用价值。     

基于Zadoff-Chu序列的OFDM精确定时同步算法

针对OFDM系统在多径衰落环境下通过能量大小定时而产生定时误差的问题,文中提出了一种基于Zadoff-Chu序列的第一径检测算法,利用序列相关性得到信道冲激响应估计值,此外分析了残留频偏对定时同步的影响,并通过改进自适应门限抑制残留频偏来判定准确定时位置。算法在时域完成,实现简单且运算量小。通过仿真对比其他算法可以看出,文中所提算法在高速移动多径环境中第一径检测概率高、均方误差小,特别是低信噪比下仍能准确同步。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.