透明导电氧化物ZnO:Al(ZAO)薄膜的研究

用磁控反应溅射法制备了ＺｎＯ：Ａｌ薄膜,研究了薄膜方块电阻空间分布的均匀性及微观形貌,并对ＺｎＯ：Ａｌ薄膜表面各元素的化学状态和深度分布进行了ＸＰＳ和ＡＥＳ分析,同时也讨论了薄膜的光学电学性能。     

铝掺杂对ZnO:Al薄膜结晶性能与微观组织的影响

以二水合醋酸锌为原材料,采用溶胶-凝胶浸涂法在钠钙玻璃基片上制备了具有c轴择优取向的ZnO:Al薄膜,考察了铝掺杂浓度对薄膜结晶性与微观组织结构的影响.结果表明:铝掺杂使ZnO薄膜(002)晶面的2θ向高角度方向偏移,c轴择优取向性增强,晶粒变小(15～20 nm).当铝掺杂浓度(摩尔分数)为1%～2%时,微观组织结构变得致密均匀;当铝掺杂浓度大于2%时,发生颗粒团聚现象;在高掺杂浓度下(5%和8%),出现大尺寸片状ZnO:Al晶粒异常长大,生长出特殊形貌的薄膜.     

共溅射法制备AZO薄膜及其光电性能的研究

目的研究Al靶直流溅射功率对Al掺杂ZnO(AZO)薄膜光电性能的影响。方法以金属Al和ZnO陶瓷作为靶材,采用直流与射频双靶磁控共溅射的方法,在玻璃基片上制备AZO薄膜。通过改变Al靶直流溅射功率,获得不同的薄膜。采用X射线衍射仪(XRD)、光电子能谱仪(XPS)、原子力显微镜(AFM)、紫外-可见分光光度计(UV-Vis)、四探针测试仪,对薄膜的微观形貌结构及光电性能进行表征和分析。结果所制备的AZO薄膜均具有C轴取向生长的六角纤锌矿结构,在可见光区域平均透过率超过90%,AZO薄膜的吸收边相比于ZnO薄膜出现了蓝移。当Al靶溅射功率为18 W时,AZO薄膜的最低电阻率为2.49×10~(-3)?·cm,品质因子为370.2 S/cm。结论 Al直流溅射功率对AZO薄膜光电性能的影响较大,溅射功率为18 W时,制备的AZO薄膜性能最优。     

射频反应磁控溅射法制备ZnO:Al透明导电薄膜的光电性能

室温下采用射频(RF)反应磁控溅射技术在玻璃衬底上沉积具有(002)择优取向的透明导电Al掺杂ZnO(AZO)薄膜。XRD结果表明,制备的AZO薄膜为多晶,具有c轴择优取向。退火处理能提高其结晶度。在Al靶射频功率为40W,ZnO靶射频功率为250W,氩气流量为15mL/min的条件下,获得200nm厚的薄膜电阻率约3.8×10-3?·cm,在可见光范围内有很好的光透过率。     

透明导电薄膜ZnO:Al(ZAO)的性能及其在有机发光二极管中的应用

研究了ZAO透明导电薄膜的微观组织结构、化学成分及其电学光学特性.结果表明,多晶ZAO薄膜呈柱状晶并具有(002)面择优取向, c轴晶格常数大于0.52000 nm;ZAO薄膜不同微区之问的成分不均匀导致了电学性能的不均匀; ZAO薄膜的电阻率和在可见光区的平均透射率分别为1.39×10-4 Ω·cm和80.8％.其透射率和吸收率曲线均具有明显的波动性,该波动性影响以ZAO为阳极的有机发光二极管的发射光谱,在5.38 A/m2电流密度下二极管的发光效率大于2 cd/A.     

ZnO:Al(ZAO)薄膜的制备与特性研究

采用磁控溅射技术制备了ZnO:Al(ZAO)薄膜.研究了不同的工艺参数对薄膜的组织结构和光电特性的影响.实验结果表明,多晶ZAO薄膜具有(001)择优取向且呈柱状生长,能量机制决定其微观生长状态.讨论了薄膜的内应力,高的沉积温度和低的溅射功率可有效减小薄膜的内应力.优化的ZAO薄膜电阻率和在可见光区的平均透射率可分别达到3×10-4-4×10-4Ω·cm和80％以上.     

双靶共溅射TiB2/Al复合薄膜的结构特征与

为研究高分散陶瓷对金属薄膜的强化作用,通过Al和Ti B2靶磁控共溅射方法制备了不同Ti B2含量的铝基复合薄膜,采用X射线能量分散谱仪、X射线衍射仪、透射电子显微镜、扫描透射电子显微镜和微力学探针表征了薄膜的微结构和力学性能。结果表明:在溅射粒子的高分散性和薄膜生长的非平衡性共同作用下,Ti B2靶的溅射粒子被超过饱和地固溶于Al的晶格中,复合薄膜形成的固溶体兼具了置换和间隙2种固溶类型特征。在这种置换和间隙"双超过饱和固溶"的作用下,铝固溶体的晶格产生剧烈畸变,复合薄膜的晶粒在很低的溶质含量下就迅速纳米化,并在晶界区域形成溶质的富集区。随溶质含量的增加,晶界的宽化使复合薄膜逐步形成了极细纳米晶分布于非晶基体中的结构。与此相应,薄膜的硬度迅速提高并在含5.8%Ti B2时达到6.9 GPa的最高值,进一步提高Ti B2的含量,复合薄膜因逐渐非晶态而呈现硬度的降低。研究结果显示了高分散Ti B2的超过饱和固溶对铝基薄膜显著的晶粒纳米化作用和强化效果。     

溶胶-凝胶法制备的ZnO:Al薄膜的微观结构及光学、电学性能

采用溶胶-凝胶法制备了ZnO:Al(AZO)透明导电薄膜．通过X射线衍射(XRD)、紫外-可见分光光度计 (UV-Vis)、扫描电镜(SEM)和电阻测量装置,考察了Al掺杂量、退火温度及镀膜层数等工艺参数对薄膜的微观结构和光电性能的影响．结果表明,退火温度越高,多晶AZO薄膜的(001)晶面择优取向生长的趋势越强,并且随退火温度升高,薄膜的晶粒尺寸增大,透光率增加．薄膜晶体结构为纯ZnO的六角纤锌矿结构．在掺杂浓度1％(摩尔分数)、退火温度500℃及镀膜层数10的条件下,得到了电阻率为3．2×10-3Ω·cm、可见光区的平均透射率超过90％的AZO薄膜．     

退火处理对不同RF功率下制备ZnO薄膜的结晶性能的影响

采用RF磁控溅射法,在不同溅射功率下在玻璃衬底上制备了ZnO薄膜,并对所制备的ZnO薄膜在空气气氛中进行了不同温度（350-600℃）的退火处理.利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）等研究了退火对不同溅射功率条件下制备的ZnO薄膜晶体性能和应力状态的影响.研究表明,在衬底没有预热的情况下,较低功率（190W）下制备的ZnO薄膜,当退火温度为500℃时,能获得单一c轴择优取向和最小半高宽,张应力在350℃退火时最小;较高功率（270W）下,薄膜最佳c轴取向和晶粒度在600℃退火温度获得,张应力最小的退火温度在350-500℃之间.当衬底预热至300℃时,退火处理对两种功率下制备的薄膜的结晶性能和应力的影响基本一致.     

TiNi/ZnO复合智能薄膜的制备及性能研究

使用射频磁控溅射法在石英衬底上制备quartz/ZnO/TiNi及quartz/TiNi/ZnO复合薄膜结构,利用XRD、SEM划痕仪等测试方法研究了复合薄膜的相结构、微观组织、力学性能。利用DMA分别研究了quartz/TiNi与quartz/ZnO/TiNi复合结构的阻尼性能随振动频率及振幅的变化规律。结果表明,前者频率响应范围在10 Hz以内,后者响应范围达到20 Hz;前者的临界外加激振电压仅为0.6 V,后者的临界外加激振电压达到1.0 V。阻尼性能测试表明,quartz/ZnO/TiNi复合结构的阻尼性能优于quartz/TiNi复合结构。由划痕仪测得两种复合薄膜结构与基体的临界结合力分别为45.75和40.15 N     

Properties of doped ZnO transparent conductive thin films deposited by RF magnetron sputtering using a series of high quality ceramic targets

To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets (ZnOAl,ZnO(Al,Dy),ZnO(Al,Gd),ZnO(Al,Zr),ZnO(Al,Nb),and ZnO(Al,W)) were fabricated and used to deposit thin films onto glass substrates by radio frequency (RF) magnetron sputtering.X-ray diffraction (XRD) analysis shows that the films are polyerystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the (002) plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 x 10-3 Ω·cm was obtained.     

Conductive and transparent Bi-doped ZnO thin films prepared by rf magnetron sputtering

Bi-doped ZnO thin films were grown on glass substrates by ratio frequency (rf) magnetron sputtering technique and followed by annealing at 400 °C for 4 h in vacuum (~ 10^− 1 Pa). The effect of argon pressure on the structural, optical, and electrical properties of the Bi-doped films were investigated. The XRD patterns show that the thin films were highly textured along the c-axis and perpendicular to the surface of the substrate. Some excellent properties, such as high transmittance (about 85%) in visible region, low resistivity value of 1.89 × 10^− 3 W cm and high carrier density of 3.45 × 10²⁰ cm^− 3 were obtained for the film deposited at the argon pressure of 2.0 Pa. The optical band gap of the films was found to increase from 3.08 to 3.29 eV as deposition pressure increased from 1 to 3 Pa. The effects of post-annealing treatments had been considered. In spite of its low conductivity comparing with other TCOs, Bi-doping didn't appreciably affect the optical transparency in the visible range of ZnO thin films.     

Preparation and properties of tungsten-doped indium oxide thin films

Tungsten-doped indium oxide (IWO) thin films were deposited on glass substrate by DC reactive magnetron sputtering. The effects of sputtering power and growth temperature on the structure, surface morphology, optical and electrical properties of IWO thin films were investigated. The thickness and surface morphology of the films are both closely dependent on the sputtering power and the substrate temperature. The transparency of the films decreases with the increase of the sputtering power but is not seriously influenced by substrate temperature. All the IWO thin film samples have high transmittance in near-infrared spectral range. With either the sputtering power or the growth temperature increases, the resistivity of the film decreases at the beginning and increases after the optimum parameters. The as-deposited IWO films with minimum resistivity of 6. 4× 10-4 Ω·cm were obtained at a growth temperature of 225 ℃ and sputtering power of 40 W, with carrier mobility of 33. 0 cm2· V-1·s-1 and carrier concentration of 2. 8× 1020 cm-3 and the average transmittance of about 81％ in near-infrared region and about 87％ in visible region.     

掺铝氧化锌薄膜的红外性能及机制

采用中频交流磁控溅射氧化锌铝(ZnO 2％Al2O3)陶瓷靶材的方法制备了掺铝氧化锌ZAO(ZnO：Al)薄膜．利用红外光谱仪测试了薄膜的红外反射性能,研究了薄膜厚度、基体温度和氩气压力对ZAO薄膜红外反射性能的影响规律,确定了制备具有高红外反射率的ZAO薄膜的工艺参数．     

Influence of oxygen gas content on the structural and optical properties of ZnO thin films deposited by RF magnetron sputtering at room temperature

Zinc oxide (ZnO) thin films were deposited on sapphire (0001) substrates at room temperature by radiofrequency (RF) magnetron sputtering at oxygen gas contents of 0%,25%,50% and 75%,respectively.The influence of oxygen gas content on the structural and optical properties of ZnO thin films was studied by a surface profile measuring system,X-ray diffraction analysis,atomic force microscopy,and UV spectrophotometry.It is found that the size of ZnO crystalline grains increases first and then decreases with the increase of oxygen gas content,and the maximum grain size locates at the 25% oxygen gas content.The crystalline quality and average optical transmittance (>90%) in the visible-light region of the ZnO film prepared at an oxygen gas content of 25% are better than those of ZnO films at the other contents.The obtained results can be attributed to the resputtering by energetic oxygen anions in the growing process.     

Effect of annealing treatment on the structural, optical, and electrical properties of Al-doped ZnO thin films

Highly conductive and transparent Al-doped ZnO (AZO) thin films were prepared from a zinc target containing Al (1.5 wt.%) by direct current (DC) and radio frequency (RF) reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment (at 300 and 400 ℃, respectively) were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as tering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.     

Concentration-dependent behavior of hydrogen in Al-doped ZnO thin films

The Al-doped ZnO thin films were synthesized by aerosol-assisted chemical vapor deposition. The concentration-dependent behavior of hydrogen in the films was discussed, finding that as hydrogen is introduced at a relatively low level, it tends to take the oxygen vacancy site and form a hydrogen-oxygen vacancy complex which behaves as a shallow donor, on the other hand it reduces the solubility of the substitutional Al; then higher hydrogen concentration results in the formation of H₂ neutral molecular complex.     

Characteristics of IZSO films deposited by a co-sputtering system

In−Zn−Sn−O films were deposited on a polycarbonate (PC) substrate by a magnetron co-sputtering system using two cathodes (DC, RF) without substrate heating. Two types of ITO targets (target A: doped with 5 wt.% SnO₂, target B: doped with 10 wt.% SnO₂) were used as an In−Sn−O source. The ITO and ZnO targets were sputtered by DC and RF discharges, respectively, and the composition of the In−Zn−Sn−O films was controlled via the power ratio of each cathode. In the case of ITO target A, the lowest resistivity (4.3×10⁻⁴ Ωcm) was obtained for the film deposited at the RF power (ZnO) of 55W. In the case of ITO target B, the lowest resistivity (2.9×10⁻⁴ Ωcm) of the film was obtained at the RF power (ZnO) of 30W, which was attributed to the increase in carrier density. Hall mobility decreased with increasing carrier density, which could be explained by the increase in ionized impurity scattering.     

Investigation of Niobium oxynitride thin films deposited by reactive magnetron sputtering

Niobium oxynitride films were deposited using reactive magnetron sputtering of a niobium target in an Ar/O₂/N₂ atmosphere with fixed nitrogen flux in direct current (DC) and pulsed modes. For the DC sputtering mode the deposition rate was found to be twice as high as for the pulsed mode at lower oxygen to nitrogen ratios (O/N). Morphology investigation by scanning electron microscopy and atomic force microscopy showed that the coatings are getting very smooth with increasing oxygen content (average roughness R_a < 0.4 nm at oxygen contents > 40 at.%). X-ray diffraction measurements revealed that the niobium oxynitride films are X-ray amorphous for oxygen contents > 40 at.%. The electrical conductivity of the coatings was studied by the 4 point-probe method and was found to decrease with increasing oxygen content. Optical properties of Nb-O-N films were analysed by spectroscopic ellipsometry and transmission spectroscopy. The refractive index of transparent and semi-transparent films was found to be in the range of 2.3 and 2.6 (at 633 nm). The experimental results will be discussed with respect to the O/N ratios (range 1.2 < O/N < ∞) or the oxygen content (range 33.7 at.% < O < 67.3 at.%) in the films as measured by Rutherford backscattering spectroscopy and particle induced X-ray emission.