Optical and electrochromic properties of oxygen sputtered tungsten oxide (WO3) thin films

Thin films of tungsten oxide (WO₃) were deposited onto glass, ITO coated glass and silicon substrates by pulsed DC magnetron sputtering (in active arc suppression mode) of tungsten metal with pure oxygen as sputter gas. The films were deposited at various oxygen pressures in the range 1.5×10⁻²−5.2×10⁻² mbar. The influence of oxygen sputters gas pressure on the structural, optical and electrochromic properties of the WO₃ thin films has been investigated. All the films grown at various oxygen pressures were found to be amorphous and near stoichiometric. A high refractive index of 2.1 (at λ=550 nm) was obtained for the film deposited at a sputtering pressure of 5.2×10⁻² mbar and it decreases at lower oxygen sputter pressure. The maximum optical band gap of 3.14 eV was obtained for the film deposited at 3.1×10⁻² mbar, and it decreases with increasing sputter pressure. The decrease in band gap and increase in refractive index for the films deposited at 5.2×10⁻² mbar is attributed to the densification of films due to ‘negative ion effects’ in sputter deposition of highly oxygenated targets. The electrochromic studies were performed by protonic intercalation/de-intercalation in the films using 0.5 M HCl dissolved in distilled water as electrolyte. The films deposited at high oxygen pressure are found to exhibit better electrochromic properties with high optical modulation (75%), high coloration efficiency (CE) (141.0 cm²/C) and less switching time at λ=550 nm; the enhanced electrochromism in these films is attributed to their low film density, smaller particle size and larger thickness. However, the faster color/bleach dynamics is these films is ascribed to the large insertion/removal of protons, as evident from the contact potential measurements (CPD) using Kelvin probe. The work function of the films deposited at 1.5 and 5.2×10⁻² mbar are 4.41 and 4.30 eV, respectively.     

Structural, morphological, optical and electrochromic properties of Ti-doped MoO3 thin films

Thin films of molybdenum trioxide (MoO₃) doped with titanium were prepared using a spray pyrolysis technique. Increasing Ti doping concentration was found to hamper the polycrystalline nature of undoped orthorhombic MoO₃ and undergo transformation from polycrystalline to amorphous structure with decrease in grain size. This was also reflected in scanning electron microscopy wherein transformation of thread-like reticulated morphology to spongy structures could be observed at higher Ti concentration (9 at% Ti). With increasing Ti concentration, the charge capacity, coloration efficiency, reversibility and electrochemical stability increased. This improvement could be ascribed to the amorphous spongy morphology of the doped samples that offers easy pathway for intercalation and deintercalation of the ions. Hence, 9 at% Ti-doped MoO₃ can act as an adequate host for electrochromic devices.     

Physical properties of Bi doped CdTe thin films grown by the CSVT method

A study of the physical properties of CdTe thin films doped with Bi is presented. CdTe:Bi thin films were deposited by the close space vapor transport (CSVT) technique using powdered CdTe:Bi crystals grown by the vertical Bridgman method. CdTe:Bi crystals were obtained with nominal Bi doping concentrations varying in the 1×10¹⁷–8×10¹⁸ cm⁻³ range. The physical properties of CdTe:Bi thin films were studied performing photoluminescence, X-ray, SEM, photoacoustic spectroscopy and resistivity measurements. We observed a decrease of the resistivity values of CdTe:Bi films with the Bi content as low as 6×10⁵ Ω-cm for Bi concentrations of 8×10¹⁸ cm⁻³. These are meaningful results for CdTe-based solar cells.     

Electrodeposition of ZnO thin films by using molecular oxygen and hydrogen peroxide as oxygen precursors: Structural and optical properties

Zinc oxide thin films were potentiostatically electrodeposited from a ZnCl₂+LiCl bath using two different oxygen precursors: molecular oxygen and hydrogen peroxide. X-ray diffraction (XRD) studies confirmed the presence of the ZnO wurtzite structure with marked preferential orientation along the (0 0 2) axis. The optical transmittance shows a clear absorption edge in the ultraviolet (UV) region which corresponds to an energy band gap of 3.41±0.03 eV. As a general rule the higher band gap energies are related to the more transparent films.     

Effect of the Cu underlayer on the optoelectrical properties of ITO/Cu thin films

Sn doped indium oxide (ITO) single layer films and ITO/Copper (Cu) bi-layer films were prepared on polycarbonate substrates by DC and RF magnetron sputtering without intentional substrate heating. In order to consider the influence of the Cu underlayer on the optoelectrical properties and microstructures of the films, the thickness of the Cu bottom layer in the ITO/Cu films was varied from 5 to 20 nm.Conventional ITO films had a constant optical transmittance of 74% and an electrical resistivity of 3.1 × 10⁻³ Ω cm, while ITO/Cu films had different optoelectrical properties that were influenced by the thickness of the Cu bottom layer. The lowest electrical resistivity, 5.7 × 10⁻⁵ Ω cm, was obtained from ITO 80 nm/Cu 20 nm films and the highest optical transmittance of 72%, was obtained from the ITO 95 nm/Cu 5 nm films. From the figure of merit (_TC) which is defined by _TC = T¹⁰/R_s, where T is the optical transmittance at 550 nm and R_s is the sheet resistance, it can be concluded that the most effective Cu thickness in the ITO/Cu films on the optoelectrical properties was 5 nm.     

Electrical and optical properties of Al doped cadmium oxide thin films deposited by radio frequency magnetron sputtering

Cadmium oxide thin films with different percentages of aluminum doping have been synthesized via radio frequency magnetron sputtering technique. Thin films were deposited on glass and silicon substrates with different percentages of aluminum at a substrate temperature of 573 K and pressure of 0.1 mbar in Ar+O₂ atmosphere. The deposited films were characterized by studying their structural, electrical and optical properties. The X-ray diffraction pattern revealed good crystallinity with preferred (1 1 1) orientation in the films. Aluminum doping in CdO thin films were confirmed by X-ray photoelectron spectroscopic studies and actual doping percentages were also measured from it. The optical band gap was found to decrease first and then increase with increasing percentages of aluminum concentrations. The electrical conductivity was found to increase with increase of aluminum doping concentration up to 5% but for higher doping concentration (>5%) the conductivity was found to decrease.     

RF magnetron sputtered ZnO:Al thin films on glass substrates: A study of damp heat stability on their optical and electrical properties

ZnO:Al thin films were deposited on glass substrates by RF magnetron sputtering from a powder compacted ceramic target. Structural, electrical and optical properties of the films with different thickness were characterized. The damp heat stability of ZnO:Al thin film was investigated for its application in thin-film solar cells. After the 1000 h damp heat treatment in harsh conditions of 85% relative humidity at 85 °C for all samples, a degradation of electrical properties was observed, while the transmissions of the films were almost unchanged. Thick films with a relative large grain size could form compact structure to resist the corrosion by oxygen and water molecules.     

Optical properties of tungsten and titanium oxide thin films prepared by plasma sputter deposition

Tungsten oxide and titanium oxide thin films were prepared by RF reactive magnetron sputter deposition. The stationary and rotating substrate holders were applied to analyze the rotating effect. The optical properties and thicknesses of oxide films were determined by a proposed optical model and the measured transmittance spectra. The dispersed refractive indices of thin films have a wide range distribution in different sputtering conditions. In the situation of rotating substrate holder, the refractive index was lower than that of the stationary substrate holder. Also, amorphous TiO₂ structure can be prepared by using rotating substrate holder. The transmittance spectrum of crystalline TiO₂ reveals that the textured structure on the film surface affects the transmittance characteristic.     

Structural and optical properties of hot wall deposited CdSe thin films

Cadmium selenide (CdSe) films were prepared by hot wall deposition technique using optimized tube length under a vacuum of 6 mPa on to well-cleaned glass and ITO substrates. The X-ray diffraction analysis revealed that the films are polycrystalline in nature for lower thickness and at lower substrate temperatures, but with increasing thickness and increasing substrate temperature a more preferred orientation along (0 0 2) direction was observed. The crystallite size (D), dislocation density (δ) and strain () were calculated. An analysis of optical measurements revealed a sharp absorption around 700 nm and a direct allowed transition. The band gap was found to be around 1.7 eV. The effect of thickness and substrate temperature on the fundamental optical parameters like band gap, refractive index and extinction coefficient are studied.     

Optical properties and thermal stability of TiAlN/AlON tandem absorber prepared by reactive DC/RF magnetron sputtering

Spectrally selective TiAlN/AlON tandem absorbers were deposited on copper and stainless steel substrates using a reactive DC/RF magnetron sputtering system. The compositions and thicknesses of the individual component layers were optimized to achieve high absorptance (α=0.931-0.942) and low emittance (ε=0.05-0.06) on copper substrate. The experimental spectroscopic ellipsometric data have been fitted with the theoretical models to derive the dispersion of the optical constants (n and k). In order to study the thermal stability of the tandem absorbers, they were subjected to heat treatment (in air and vacuum) for different durations and temperatures. The tandem absorber deposited on Cu substrates exhibited high solar selectivity (α/ε) of 0.946/0.07 even after heat treatment in air up to 600 °C for 2 h. At 625 °C, the solar selectivity decreased significantly on Cu substrates (e.g., α/ε=0.924/0.30). The tandem absorber on Cu substrates was also stable in air up to 100 h at 400 °C with a solar selectivity of 0.919/0.06. Studies on the accelerated aging tests indicated that the activation energy for the degradation of the tandem absorber is of the order of 100 kJ/mol.     

Hydrogenation effect on structural,electrical and optical properties of CdS thin films for solar cell

Adsorption effects would be expected to be of considerable importance with thin films because of the changes in electron location accompanying adsorption. The effects of hydrogenation on structural, optical and electrical properties of the CdS thin films have been reported. GIXRD patterns shows that films have polycrystalline nature with a hexagonal structure. The optical band gap increased after hydrogenation of the film. The variation of conductivity of CdS films have been investigated depending upon the applied voltage at room temperature. The resistivity increased after hydrogenation of the films. Hydrogenated thin films can be used in solar cells because hydrogen plays an important role to modify the physical properties.     

Optical properties of TiO2 thin films deposited by DC sputtering and their photocatalytic performance in photoinduced process

TiO₂ thin films were deposited by DC Sputtering varying the deposit time. These films were characterized by XRD, AFM, photoluminescence, UV–Vis, ellipsometry and XPS. The optical properties of TiO₂ thin films with different thickness, influenced their photocatalytic behavior in two photoinduced process. When TiO₂ thin films were irradiated with a UV light, midgap states were generated and the electrons were placed in lower energies than its band gap, favoring the photocatalytic hydrogen production and CO₂ photoreduction. From PL technique analyses it was observed that electrons occupied midgap states between the bands, with lower energies than the band gap. With these results it was possible to propose an energy diagram in order to correlate with photoinduced processes results. The presence of Ti³⁺ species was reconfirmed by means of XPS analyses. These species could be found in the midgap states, generated by the interaction between the UV irradiation and the film surface, which contributed to the photocatalytic activity of the films. The hydrogen production was similar for all the thin films studied (33–35 μmol) associated to the presence of similar energy midgap states. In the case of CO₂ photoreduction, all films produced CH₂O (8951 and 6252 μmol/g) and the films with a thickness of 330 and 420 nm generated CH₃OH (970 and 292 μmol/g). The extinction coefficient confirmed the XRD results for the film with greatest deposited time, which exhibited the highest crystallinity. All photocatalytic results did not show any dependence with the thin film thickness.     

Highly transparent and conductive Zn0.85Mg0.15O:Al thin films prepared by pulsed laser deposition

Zn_1−xMg_xO:Al thin films have been prepared on glass substrates by pulsed laser deposition (PLD). The effect of substrate temperature has been investigated from room temperature to 500 °C by analyzing the structural, optical and electrical properties. The best sample deposited at 250 °C shows the lowest room-temperature resistivity of 5.16×10⁻⁴ Ω cm, and optical transmittance higher than 80% in the visible region. It is observed that the optical band gap decreases from 3.92 to 3.68 eV when the substrate temperature increases from 100 to 500 °C. The probable mechanism is discussed.     

Discharge power dependence of structural, optical and electrical properties of DC sputtered antimony doped tin oxide (ATO) films

Antimony doped tin oxide (ATO) is a transparent conducting oxide (TCO), which has been the focus of intensified study due to its wide range of technological applications and low cost. In the present work ATO films have been prepared by reactive DC magnetron sputtering from a metallic target at different discharge power densities without direct substrate heating. Then a post-deposition annealing at 350 °C in N₂ during 20 min was performed. There is a process window for the optimal sputter deposition of ATO with a minimum resistivity of about 3.3×10⁻³ Ω cm observed in samples deposited at a power density of 1.13 W/cm². These samples, which present a (2 1 1) preferential orientation, have good electrical conductivity and good transparency in the visible range. Higher values of sputtering discharge power density (1.24 W/cm²) change the preferential orientation to (1 0 1) because of the formation of oxygen vacancy planes. These samples are less conductive and transparent because their layered structure reduces the free charge mobility and allows the formation of Sb in its unusual oxidation state 4+ (between Sb³⁺ and Sb⁵⁺), which produces a sample blue darkening. Higher discharge power densities, above 1.41 W/cm², produce amorphous samples and an abrupt resistivity increase. The aim of the present work is to go into more depth in the knowledge of ATO in order to develop thin films with optimal electrical and optical properties.     

Evolution of the properties of CuAlSe2 thin films with the oxygen content

CuAlSe₂ thin films have been synthesized by annealing, under argon flow, a multilayer structure of thin Cu, Al and Se layers sequentially deposited by evaporation under vacuum. It is shown that the oxygen content depends not only on the evaporation content but also on the argon flow. The properties of the thin films are modified by this oxygen percentage: when no more than 4–5 at % of oxygen is present in the films, their optical properties are very similar to that of single crystals. The inter-band transitions A, B, C typical of such chalcopyrite structure are clearly visible on the absorption spectra. The variation of the conductivity of these films in the high temperature domain is as that expected in CuAlSe₂, while in the low temperature, grain boundaries are dominant.     

Titanium-containing amorphous hydrogenated silicon carbon films (a-Si:C:H/Ti) for durable solar absorber coatings

By the incorporation of silicon into titanium-containing amorphous hydrogenated carbon films (a-C:H/Ti), the lifetime stability at 250°C in air can be strongly enhanced. A combined PVD/PECVD process for the vacuum deposition of these titanium-containing amorphous hydrogenated silicon carbon films (a-Si:C:H/Ti) is described. Elemental compositions of the deposited films have been determined by in situ core-level photoelectron spectroscopy (XPS). Optical constants for these films have been determined in the wavelength range from 400 to 2500 nm by means of spectrophotometry. Single layers of a-Si:C:H/Ti and a-C:H/Ti deposited on aluminum and copper substrates have been subjected to comparative aging tests. At 250°C in air, the stability of the a-Si:C:H/Ti films is significantly higher than that of the a-C:H/Ti films. If the silicon content is not too high, the aging properties under humid conditions do not suffer a lot from the incorporation of silicon. However, if the silicon content is clearly higher than the carbon content, the humidity resistance will decrease. For an absorber coating for flat plate solar collectors, the optimized silicon content is expected to be in the range where the high-temperature stability in air is already improved, and where the humidity resistance is still good. For vacuum collectors, a higher silicon content might be advantageous.     

Structural, morphological and electrochemical properties of nanocrystalline V2O5 thin films deposited by means of radiofrequency magnetron sputtering

Due to easiness of preparation and high energy density, V₂O₅ nanocrystalline thin films are particularly attractive as cathode materials for all-solid-state rechargeable lithium microbatteries. However, their electrochemical performances are strictly related to the film microstructure, which, in turn, is related to the nature and parameters of the deposition technique. For this reason, the preparation of thin films with reproducible electrochemical properties is still an open problem.Here, we report on the deposition of V₂O₅ crystalline thin films by means of reactive radiofrequency (r.f.) magnetron sputtering, using vanadium metal as the target. Different deposition times and substrate temperatures were adopted. X-ray powder diffraction (XRD) and atomic force microscopy were used to investigate the structural and morphological features of the films. In particular, XRD analysis revealed that the deposition parameters affect the crystallographic orientation of the films. A h 0 0 orientation is observed in case of thin samples (about 100 nm) prepared at 300 °C, whereas a 1 1 0 preferential growth is obtained for thicker films. Films deposited at 500 °C display a 0 0 1 orientation irrespective on the deposition time.Reversible Li intercalation/deintercalation processes and high specific capacity are observed for the h 0 0-oriented V₂O₅ thinner films, with the ab plane arranged perpendicular to the substrate. In this case, the cycling behaviour is very promising, and a stable capacity higher than 300 mAh g⁻¹ was delivered in the potential range 3.8-1.5 V at 1C rate over at least 70 cycles.     

Determination of optical properties of amorphous Ta2O5 films deposited by spin- and dip-coating methods

The optical properties of amorphous Ta₂O₅ films prepared by the sol-gel dip- and spin-coating deposition technique and dried at 60°C have been investigated. Refractive index, extinction coefficient and optical energy gap have been calculated from optical transmission measurements using the Swanepoel method. The films of similar thickness deposited by the two methods were compared. It is shown that the optical properties are dependent on the deposition methods. The energy band gap of the Ta₂O₅ films is 3.75 ± 0.12 eV and is independent of the coating methods.     

Effect of high copper and oxygen concentrations on the optical and electrical properties of (CdTe)xCuyOz films

Thin films of (CdTe)_xCu_yO_z have been prepared by reactive RF cosputtering using high concentrations of copper and oxygen. The films were grown at 350 °C on glass and Si substrates. Under these conditions samples of amorphous nature were obtained with some clusters of Cu₂O for the larger concentrations of Cu and O used in this work. The largest band gap variation, from 3.5 to 1.4 eV, was obtained for the samples grown with an oxygen flow of 17 standard cubic centimeters per minute (sccm) in the growth chamber. The samples are highly resistive for most cases, but for high Cu concentrations resistivities of the order of 10³ Ω-cm were obtained in the case of films grown with a flow of 15 sccm of oxygen.     

Heat treatment effects on the optical properties of Sol–gel Ta2O5 thin films

In this work optical properties of Ta₂O₅ thin films with respect to heat treatment temperature were investigated. Ta₂O₅ thin films were prepared by sol–gel process using dip-coated method with a constant speed of 107 mm/min. Optical properties have been calculated from optical transmission measurements as a function of heat treatment temperature. The refractive indices and absorption coefficients were affected by heat treatment. The refractive index at λ=550 nm increased from 1.84 to 2.04 and absorption coefficient increased from 241 to 5668 cm⁻¹ when heat treatment temperature increased from 100°C to 500°C. The thickness of the film decreased from 272 to 190 nm and their optical band gap decreased from 3.68±0.09 eV to 3.51±0.08 eV for the film heated from 100°C to 500°C.