表面型静电感应晶闸管负阻导通特性的研究

运用漂移-扩散模型,对表面型静电感应晶闸管的导通特性进行了数值模拟。分析表明,表面型静电感应晶闸管(SITH)具有与纵向结构SITH类似的负阻导通特性,而且表面型结构的各电极相对面积比纵向结构要小很多,阴极和栅极之间的电容更小,从而具有更快的开关速度和更高的灵敏度。对表面型SITH的电势分布、载流子分布以及阳极I-V特性进行了深入地计算和分析。显示数值模拟结果十分接近实际测量结果,模拟中也发现栅极的位置对栅极的控制性能的影响很大。     

静电感应晶闸管静态特性的仿真模拟

引入了一种SITH仿真模型.结合实验数据,利用PSPICE模拟软件,从等效电路的角度对静电感应晶闸管(SITH)进行了正向导通,类三极管正向阻断、负阻转折特性的仿真模拟.     

双极模式静电感应晶体管特性分析

在新的阻断状态全解析模型基础上,结合已有的理论成果,全面分析了双极模式静电感应晶体管(BSIT)的静态、动态和温度特性,并在分析中更加明确地论证了势垒钉扎等问题,为BSIT的设计提供了理论依据。     

静电感应晶闸管的负阻转折特性分析

描述了静电感应晶闸管(SITH)的优点、应用前景、结构特点及负阻转折特性.从SITH的作用机理出发,分别分析了导致负阻转折出现的几种重要的物理效应,如电导调制效应、空间电荷效应和复合效应以及载流子寿命的变化等,分析几种物理效应综合作用的过程.得到SITH的负阻转折属于高电平下空间电荷效应和复合效应共同限制的双注入问题,是几种重要物理效应共同作用的结果.     

一种具有高正向阻断电压及优良开关特性的新型静电感应晶闸管

设计并构造了一种具有条状阳极P-缓冲层结构（SAP-B）的新型静电感应晶闸管。该结构以具有p- 缓冲层和嵌入p+发射区（条状阳极区）的弱掺杂n-发射区（泄漏阳极区）为特点。与传统扩散源区埋栅结构相比,SAP-B结构可进一步简化工艺,并将扩散源区埋栅结构静电感应晶闸管的正向阻断电压从1000V提高至1600V,阻断增益从40提高至70,同时将关断时间从0.8μs降低至0.4μs。     

静电感应光电晶闸管负阻转折的光敏特性

Influences of light irradiation on the negative resistance turn-around characteristics of static induction photosensitive thyristor （SIPTH） have been experimentally and theoretically studied. As the gate current of SIPTH is increased by the light irradiation, the potential barrier in the channel is reduced due to the increase in voltage drop across the gate series resistance. Therefore, SIPTH can be quickly switched from the blocking state to the conducting state by relatively low anode voltage. The optimal matching relation for controlling anode conducting voltage of SIPTH by light irradiation has also been represented.     

埋栅型电力静电感应晶闸管的I-V特性反向转折机理

研究了静电感应晶闸管的反向转折特性．当工作在正向阻断态的阳极电压增大到某一临界值时,静电感应晶闸管的I-V曲线呈现出反向转折特性,甚至转向导通态．在综合考虑了工作机理、双注入效应、空间电荷效应、沟道中的电子一空穴等离子体和载流子寿命变化的基础上分析了静电感应晶闸管的反向转折特性．首次给出了反向转折机理的理论解释,并给出了估算转折电压和电流的数学表达式,在常用工艺参数范围内,计算结果和实验测量值基本一致．     

静电感应晶闸管在阻断态时的SIT-BJT等效工作模型

提出了一种描述静电感应晶闸管在阻断态时的工作机理的SIT-BJT等效模型.在器件物理的基础上,分析得到的这个模型衔接了静电感应晶闸管的物理参数和结构参数,而且给出的数值分析和理论分析证明了这个模型的正确性.在该模型的基础上,讨论了势垒、阳极结的电势降落和电流的放大因子等电参数的变化.     

静电感应晶闸管在阻断态时的SIT-BJT等效工作模型

提出了一种描述静电感应晶闸管在阻断态时的工作机理的SIT-BJT等效模型.在器件物理的基础上,分析得到的这个模型衔接了静电感应晶闸管的物理参数和结构参数,而且给出的数值分析和理论分析证明了这个模型的正确性.在该模型的基础上,讨论了势垒、阳极结的电势降落和电流的放大因子等电参数的变化.     

静电感应晶闸管沟道载流子分布的物理效应

The physical effects of the carrier distribution in the channel on the dynamical performance of a static induction thyristor （SITH） have been studied numerically and experimentally. The analytical expressions of the minority carrier distribution in the channel of the SITH were also derived and the space charge distribution control- ling mechanism on the current of the SITH under high level injection have been analyzed deeply. The relationships among the minority carrier distribution, potential distribution, I-V characteristics and transient performances of the SITH are revealed.     

埋栅结构双极型静电感应晶体管动态特性的改善

双极型静电感应晶体管(BSIT)的失效经常出现在阻断态与导通态之间的瞬态过渡过程。因此,研究BSIT的开关动态过程的物理机理对于设计和制造高性能器件有着重要意义。本文深入研究了埋栅结构电力BSIT瞬态过程的动态特性,讨论了材料、几何结构与工艺参数对BSIT动态性能的影响。提出了一系列改善BSIT动态特性的工艺措施。     

Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure

The failure of a bipolar static induction transistor(BSIT) often occurs in the transient process between the conducting-state and the blocking-state,so a profound understanding of the physical mechanism of the switching process is of significance for designing and fabricating perfect devices.The dynamical characteristics of the transient process between conducting-state and blocking-state BSITs are represented in detail in this paper.The influences of material,structural and technological parameters on the dynamical performances of BSITs are discussed. The mechanism underlying the transient conversion process is analyzed in depth.The technological approaches are developed to improve the dynamical characteristics of BSITs.     

A new static induction thyristor with high forward blocking voltage and excellent switching performances

A new static induction thyristor (SITH) with a strip anode region and p~- buffer layer structure (SAP-B) has been successfully designed and fabricated. This structure is composed of a p~- buffer layer and lightly doped n~-regions embedded in the p~+-emitter. Compared with the conventional structure of a buried-gate with a diffused source region (DSR buried-gate), besides the simple fabrication process, the forward blocking voltage of this SITH has been increased to 1600 V from the previous value of 1000 V, the blocking gain increased from 40 to 70, and the turn-off time decreased from 0.8 to 0.4μs.     

Improvements on high voltage performance of power static induction transistors

A novel structure for designing and fabricating a power static induction transistor (SIT) with excellent high breakdown voltage performance is presented. The active region of the device is designed to be surrounded by a deep trench to cut off the various probable parasitical effects that may degrade the device performance, and to avoid the parallel-current effect in particular. Three ring-shape junctions (RSJ) are arranged around the gate junction to reduce the electric field intensity. It is important to achieve maximum gate-source breakdown voltage BVGS, gate-drain breakdown voltage BVGD and blocking voltage for high power application. A number of technological methods to increase BVgd and BVGs are presented. The BVGS of the power SIT has been increased to 110 V from a previous value of 50-60 V, and the performance of the power SIT has been greatly improved. The optimal distance between two adjacent ring-shape junctions and the trench depth for the maximum B VGS of the structure are also presented.     

电力静电感应晶体管大电压特性的改善

A novel structure for designing and fabricating a power static induction transistor（SIT）with excellent high breakdown voltage performance is presented.The active region of the device is designed to be surrounded by a deep trench to cut off the various probable parasitical effects that may degrade the device performance,and to avoid the parallel-current effect in particular.Three ring-shape junctions（RSJ）are arranged around the gate junction to reduce the electric field intensity.It is important to achieve maximum gate–source breakdown voltage BVGS, gate–drain breakdown voltage BVGD and blocking voltage for high power application.A number of technological methods to increase BVGD and BVGS are presented.The BVGS of the power SIT has been increased to 110 V from a previous value of 50–60 V,and the performance of the power SIT has been greatly improved.The optimal distance between two adjacent ring-shape junctions and the trench depth for the maximum BVGS of the structure are also presented.     

静电感应晶闸管的应用研究

从应用角度出发,测量分析了国产静电感应晶闸管(SITH)的主要电参数,特别是在开启、关断特性上作了详细的研究.针对应用较多的领域,研究出了四种各具特色、适用不同场合的驱动电路.测试表明这些电路可以使SITH器件达到较好的应用水平.     

无机和有机型静电感应晶体管中势垒高度与偏压的指数依赖关系研究

本文利用归一化方法归纳出无机和有机型静电感应晶体管SIT/OSIT在低电流区沟道势垒高度Φc与所加偏压的指数关系 Φc = η*VGSexp(-VDS/μ*VGS)+VSbi。这是一种比势垒高度Φc线性表达更详细准确的描述。通过实验和计算结果的比对,验证该指数关系能够准确推导出SIT/OSIT的I-V特性,并且与实验数据取得很好的吻合,从而有效降低理论计算与实验结果间误差。该关系具有普适性,适用于低电流区单极型SIT/OSIT的I-V特性表述。