354.7nm ps强紫外激光

用两块Ⅱ类KDP晶体对主被动锁模YAG激光输出进行倍频及和频,在入射光强度为1.27GW/cm~2条件下,得到脉冲宽度为32ps、峰值功率30MW、平均功率60mW和重复率为20Hz的稳定的354.7nm激光。     

蓝宝石对532nm激光吸收率的实验测量

为了分析激光偏振化方向和激光入射角对激光吸收率、反射率和透过率的影响,采用量热法测量了蓝宝石对532nm线偏振光辐照下的反射率和透过率,并获得了相应的吸收率。比较实验中测得的反射率和理论计算值,发现两者变化趋势一致,证实了该试验方法的可行性。结果表明,垂直于入射面的反射率随入射角的增大而增大,平行于入射面的反射率则随入射角的增大逐渐减小,在入射角接近60时达到最小,然后急剧增大;在垂直和平行偏振光下,透过率均随着入射角增大而减小,吸收率则逐渐增大。该结果为激光加工蓝宝石时工艺参量的选择和优化提供了参考。     

Development of positive photoresist

A new model is proposed to describe the development of positive photoresist over the full range of exposure. The model includes the depth dependence of development rate and is capable of fitting measured data of all resists examined to date. A measurement system for determining the exposure and development model parameters is described. Several types of photoresist and developer have been characterized under a number of processing conditions. The effect of the development model parameters on developed resist profiles is illustrated using simulation.     

ToF-SIMS and XPS study of ion implanted 248 nm deep ultraviolet (DUV) photoresist

Arsenic implanted 248 nm DUV photoresist films were characterized by ToF-SIMS and XPS analysis methods. The effect of the implant dose and energy on the formation of the crust layer on top of the bulk photoresist was studied. The crust layer thickness was found to be dependent on the implant energy and dose. The elemental and chemical changes induced by various implant doses and implant energies were investigated. Emphasis was put on the effect of the aging time on the composition of the ion implanted photoresist.     

高效率紧凑紫外355nm激光器

报道一种激光二极管(LD)端面抽运的Nd:YAG激光晶体腔外三倍频355 nm紫外激光器,实验中采用声光调Q技术,选用结构紧凑的平平腔结构,在腔外对1 064 nm基波采用了Ⅰ类相位匹配Li3B3O5(LBO)晶体二倍频、Ⅱ类相位匹配LBO晶体实现了三倍频,获得了较好的光束质量的准连续355 nm紫外激光输出,在激光二极管泵浦功率为28 W时,声光Q开关调制频率为10 kHz时,获得了8.1 W的红外1 064 nm红外激光,紫外单脉冲能量165μJ,脉宽6 ns,峰值功率27.5 kW,808 nm到355 nm的光-光转换率为5.89%,整个系统长度控制在150 mm以内,该激光器结构紧凑,适合产品化。     

正性光刻胶的噪声抑制

本文从偏振光干涉和正性光刻胶版的电子显微照片的分析中找到了噪声的源泉和提出了解决办法，有较大的实用价值。     

Contrast enhancement in image transfer via interaction of UV radiation with inorganic photoresist films

Photochemical transformations occurring in thin films of inorganic photoresists under UV irradiation from an excimer laser are analyzed theoretically. It is shown that the optimization of the light intensity and irradiation dose can make the transition region between the exposed and unexposed parts of a film narrower, thereby improving the image quality in photolithography.     

355nm激光作用下二甲胺的多光子电离质谱研究

利用多光子电离技术结合飞行时间质谱仪,在355nm激光作用下对二甲胺分子进行了研究,我们认为其主要经历了2＋1的REMPI过程,二甲胺母体离子α断裂产生CH3N＋H=CH2,CH3N＋H=CH2进一步解离产生C2H4N＋,用从头算方法确定了m/e=42的离子是（CH3N≡CH）＋,对m/e=28的离子的可能来源进行了推测：一是（CH3N≡CH）＋离子进一步发生重排,失去CH2游离基;二是CH2=N＋H21,2脱氢。     

248nm准分子激光加工玻璃微通道的实验研究

为了提高玻璃微通道的加工效率及质量,采用248nm准分子激光加工玻璃微通道的新型加工方法进行了理论分析和实验验证,取得了不同激光参量下玻璃微通道的加工工艺数据。结果表明,激光加工玻璃微通道的刻蚀阈值为4.54103mJ/mm2;随着激光能量的增加,刻蚀深度近似成对数增长,经线性拟合得到刻蚀深度随激光能量变化的公式;随着脉冲频率的增加,刻蚀深度近似成线性增长,经线性拟合得到刻蚀深度随频率变化的公式;且通道底面粗糙度随激光能量及脉冲频率的增加,呈增长趋势;激光的能量在400mJ～600mJ、脉冲频率在4 Hz～7 Hz范围的组合激光参量可实现刻蚀率高、粗糙度小的微通道加工。这些结果对于合理选择激光参量、提高玻璃微通道的加工效率及质量是有帮助的。     

用于355nm紫外光源的腔外倍频全固态激光器

为保证高输出功率前提下获得高光束质量的1064和532 nm激光共向输出,实验中,首先采用主振荡功率放大器系统有效地控制基频光束质量,获得平均功率为70 W、重复频率为10 kHz、脉宽为60 ns和光束质量因子M2约为3.9的1064 nm基频激光;接着利用二级放大器,获得平均功率为182.9 W,脉宽为80 ns的...     

1 110 nm Nd:GGG 激光器与555 nm 倍频激光器

采用紧凑的直腔设计和精确的膜系设计, 实现了LD 侧面泵浦1 110 nm Nd:GGG 和腔内倍频的555 nm 激光.当泵浦功率为168 W时, 得到了25.5 W的1110 nm 连续激光输出.在10 kHz 的声光调Q 情况下, 应用II 类非临界相位匹配LiB3O5(LBO)倍频晶体, 得到了最大输出功率为3.1 W的555 nm 倍频光输出, 光-光转换效率为1.8 %, 相应的脉冲宽度为176 ns, 在水平和竖直方向上的M2因子分别为19.6 和21.3.     

短至218.3nm的可调谐激光光源

本文给出了KDP类晶体对不同波长的倍频以及和频相位匹配角的计算,从计算结果选择最佳条件做了实验验证。用脉冲Nd:YAG激光得到了最短可调谐激光波长为218.3nm。     

Modeling rail-span collapse in ICs exposed to a single radiation pulse

The response of IC power rails to pulsed ionizing irradiation is investigated. Rail-span collapse is shown to be the cause of functional failures in most ICs. A simple analytical model is proposed for calculating the magnitude of the radiation effect.     

266nm的激光作用下溴苯分子的多光子电离碎片化机理

在266nm激光作用下,利用多光子电离-飞行时间质谱法获得了溴苯分子的MBPIF-TOF质谱。实验测得了各碎片离子占总离子信号的百分比对激光强度的依赖关系,并用这些实验结果对溴苯分子的多光子电离解离机理做了分析,还对C6H5 ,C5H3 ,C4H2 ,C3H 等碎片离子的可能形成过程作了讨论,结果证明母体分子吸收光离解离是主要通道,且碎片离子主要是经过离子离解阶梯模式产生的。     

Photosensitization of standard fibers with deep UV laser radiation

A strong and permanent ultraviolet photosensitivity enhancement was locked into standard optical fiber pre-treated with above-bandgap 157-nm F/sub 2/-laser radiation. Below-bandgap 248-nm irradiation of the pre-treated fiber yielded fiber Bragg gratings (FBGs) with an index contrast of 6.5 /spl times/ 10/sup -4/, a value four-fold larger than that available in 16% Ge-doped photosensitive fiber. The F/sub 2/-laser photosensitivity locking was 300 times more effective than with KrF-laser pre-treatment in terms of the accumulated fluence required to lock in a similar refractive index change. Accelerated FBG aging tests equivalent to 25 years at 70/spl deg/C revealed a less than 2% reflectivity decay in both 157- and 248-nm pre-treated fibers, which is sufficient to eliminate the postannealing step typically required in hydrogen-loaded fibers. The large photosensitization and the superior thermal stability of both 248- and 157-nm pre-treated fibers are associated with a new Si-H bond absorption feature at 1387 nm, which appears only during the FBG formation step.     

266nm激光作用下1,3-二溴苯的多光子电离和解离研究

在波长为266 nm的激光作用下对1,3-二溴苯分子的多光子电离解离过程进行了研究,获得了溴苯分子的MPIF-TOF质谱,并测得了各碎片离子占总离子信号的百分比对激光强度的依赖关系.用这些实验结果分析1,2-二溴苯分子的多光子电离解离机理,得出1,3-二溴苯的MPI过程主要是母体分子解离-中性碎片电离C6H 4,C5H 3,C4H 2,C3H 等碎片离子主要是经过离子离解阶梯模式产生的,并给出了可能的解离通道.     

193毫微米ArF准分子激光器

本文报导改进的193毫微米ArF准分子激光器,单脉冲输出激光能量超过200毫焦耳。详细地研究了紫外光预电离对输出性能的影响。