共查询到20条相似文献,搜索用时 31 毫秒
1.
McDermott M.G. Sweeney C.N. Benedek M. Borelli J.J. Dawe G. Raffaelli L. 《Microwave Theory and Techniques》1990,38(9):1183-1190
Two technologies are demonstrated whereby high-Q , vertical-structure, abrupt-junction varactor diodes are monolithically integrated with 0.25-μm GaAs MESFETs on semi-insulating GaAs substrates for multifunction millimeter-wave monolithic circuit applications. Diodes with various anode sizes have been realized with measured capacitance swings of >2.1:1 from 0 V to -4 V and series resistances of approximately 1 Ω. Diodes having a zero bias capacitance of 0.35 pF have Q 's of >19000 (50 MHz) with -4 V applied to the anode. Under power bias conditions, the MESFETs have a measured gain of >6 dB at 35 GHz with extrapolated values for f t and f max of 32 GHz and 78 GHz, respectively. Using these technologies, a monolithic Ka -band voltage controlled oscillator (VCO) containing a varactor diode, a 0.25-μm GaAs MESFET, and the usual MMIC passive components has been built and tested. At around 31 GHz, the circuit has demonstrated 60-mW power output with 300 MHz of tuning bandwidth 相似文献
2.
Nagata K. Nakajima O. Nittono T. Yamauchi Y. Ishibashi T. 《Electron Devices, IEEE Transactions on》1992,39(8):1786-1792
The fabrication and characterization of a new self-aligned HBT utilizing bridged base-electrode technology (BBT) are presented. This new technology simplifies the fabrication process and relaxes the limitations in device size scaling, thus decreasing the emitter size to 1 μm×1 μm. In spite of a large junction periphery area ratio, a good current gain of more than 10 is obtained in an HBT with an emitter size of 1 μm×1 μm. A series of fabricated HBTs shows excellent high-speed performance. The highest values of f T =90 GHz and f max=63 GHz are obtained in an HBT with an emitter size of 1 μm×5 μm. The realization of HBTs with small emitters and excellent high-frequency characteristics demonstrates the effectiveness of this new technology 相似文献
3.
Hanes M.H. Agarwal A.K. O'Keeffe T.W. Hobgood H.M. Szedon J.R. Smith T.J. Siergiej R.R. McMullin P.G. Nathanson H.C. Driver M.C. Thomas R.N. 《Electron Device Letters, IEEE》1993,14(5):219-221
An improved silicon-on-insulator (SOI) approach offers devices and circuits operating to 10 GHz by providing formerly unattainable capabilities in bulk silicon: reduced junction-to-substrate capacitances in FETs and bipolar transistors, inherent electrical isolation between devices, and low-loss microstrip lines. The concept, called MICROX (patent pending), is based on the SIMOX process, but uses very-high-resistivity (typically>10000 Ω-cm) silicon substrates, MICROX NMOS transistors of effective gate length 0.25 μm give a maximum frequency of operation, f max, of 32 GHz and f T of 23.6 GHz in large-periphery (4 μm×50 μm) devices with no correction for the parasitic effects of the pads. The measured minimum noise figure is 1.5 dB at 2 GHz with associated gain of 17.5 dB, an improvement over previously reported values for silicon FETs 相似文献
4.
AlGaAs/GaAs collector-up heterojunction bipolar transistors (HBTs) with a heavily carbon-doped base layer were fabricated using oxygen-ion implantation and zinc diffusion. The high resistivity of the oxygen-ion-implanted AlGaAs layer in the external emitter region effectively suppressed electron injection from the emitter, allowing collector current densities to reach values above 105 A/cm 2. For a transistor with a 2-μm×10-μm collector, f T was 70 GHz and f max was as high as 128 GHz. It was demonstrated by on-wafer measurements that the first power performance of collector-up HBTs resulted in a maximum power-added efficiency of as high as 63.4% at 3 GHz 相似文献
5.
A 500-MHz monolithic video driver integrated circuit (IC) for next-generation leading CRT (cathode ray tube) displays with 4 Mpixels or more is presented. The IC has a 320-mA output current amplifier, a video gain controller, a buffered input multiplexer, and a sample-and-hold bias circuit. Using new open-loop amplifier architecture and novel complementary-bipolar circuitry design, the driver IC with bandwidth f B of 500 MHz is fabricated. It is economically implemented by a 2.5-μm commercially available linear array with a transistor f T of 4 GHz. Its f B/f T ratio (a figure of merit of the driver circuit design) is three times larger than that of the latest conventional design. The driver IC and power transistors are intended to realize a high-output (50·Vp-p), wideband (300 MHz) CRT video amplifier characterized by good output voltage stability (<1%) without high-voltage output feedback for DC restoration 相似文献
6.
Sato H. Vlcek J.C. Fonstad C.G. Meskoob B. Prasad S. 《Electron Device Letters, IEEE》1990,11(10):457-459
Collector-up InGaAs/InAlAs/InP heterojunction bipolar transistors (HBTs) were successfully fabricated, and their DC and microwave characteristics measured. High collector current density operation (J c>30 kA/cm2) and high base-emitter junction saturation current density (J 0>10-7 A/cm2) were achieved. A cutoff frequency of f t=24 GHz and a maximum frequency of oscillation f max=20 GHz at a collector current density of J 0 =23 kA/cm2 were achieved on a nominal 5-μm×10-μm device 相似文献
7.
Tamaki Y. Shiba T. Kure T. Ohyu K. Nakamura T. 《Electron Devices, IEEE Transactions on》1992,39(6):1387-1391
A new method is developed for forming shallow emitter/bases, collectors, and graft bases suitable for high-performance 0.3-μm bipolar LSIs. Fabricated 0.5-μm U-SICOS (U-groove isolated sidewall base contact structure) transistors are 44 μm2, and they have an isolation width of 2.0 μm, a minimum emitter width of 0.2 μm, a maximum cutoff frequency (f T) of 50 GHz, and a minimum ECL gate delay time of 27 ps. The key points for fabricating high-performance 0.3-μm bipolar LSIs are the control of the graft base depth and the control of the interfacial layer between emitter poly-Si and single-Si. The importance of a tradeoff relation between f T and base resistance is also discussed 相似文献
8.
Slater D.B. Jr. Enquist P.M. Hutchby J.A. Reed F.E. Morris A.S. Kolbas R.M. Trew R.J. Lujan A.S. Swart J.W. 《Photonics Technology Letters, IEEE》1993,5(7):791-794
An AlGaAs/GaAs nan heterojunction bipolar transistor (HBT) laser driver circuit and a pseudomorphic InGaAs/GaAs/AlGaAs graded index single-quantum-well (SQW) laser have been laterally integrated to maintain surface planarity using selective organometallic vapor-phase epitaxy (OMVPE) regrowth of the HBT. The self-aligned HBTs exhibit a DC current gain of 30 and an f t (f max ) of 45(60) GHz. The 980-nm lasers exhibit room-temperature threshold current densities as low as 420(320) A/cm2 for CW (pulsed) operation. The cavities are 40(7) μm×500 μm and have less than 1(2) Ω of series resistance. SPICE simulations of the integrated driver indicate that operating speeds of over 10 Gb/s are possible 相似文献
9.
Slater D.B. Jr. Enquist P.M. Najjar F.E. Chen M.Y. Hutchby J.A. Morris A.S. Trew R.J. 《Electron Device Letters, IEEE》1991,12(2):54-56
The diffusion coefficient (D h) and a value for the collector velocity (v h) of holes in AlGaAs/GaAs P-n-p HBTs (heterojunction bipolar transistors) were obtained from high-frequency measurements on structures with different base and collector widths. Quantities for D h and v h of 5.6 cm2/s and 5.5×106 cm/s, respectively, were obtained by plotting the total emitter-collector delay versus inverse emitter current and extrapolating the data to infinite emitter current to obtain the base and collector transit delays. An f t and f max as high as 15 and 29 GHz, respectively, were obtained for non-self-aligned (1-μm emitter mesa/base contact separation) devices with a 2.6-μm×10-μm emitter 相似文献
10.
Kusano C. Masuda H. Mochizuki K. Ishikawa Y. Kawata M. Mitani K. Miyazaki M. 《Electron Devices, IEEE Transactions on》1993,40(1):25-31
A new basic ohmic contact technology for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is presented. The effect of the device parameters on the high-frequency performance of HBT ICs for 10-Gb/s systems is analyzed, and it is shown that, at a cutoff frequency (f T) of 40 GHz or more, reducing base resistance or collector capacitance is more effective than increasing f T for obtaining high-frequency performance. A process is developed for fabricating base electrodes with a very low ohmic contact resistivity, ~10-7 Ω-cm2, by using a AuZn/Mo/Au alloy, which provides the required high performance. Self-aligned AlGaAs/GaAs HBTs, with a 2.5-μm×5-μm emitter, using a AuZn/Mo/Au alloy base metal and an undoped GaAs collector, are shown to have an f T and a maximum oscillation frequency of about 45 and 70 GHz, respectively, at 3.5 mA. An AGC amplifier with a 20-dB gain and a bandwidth of 13.7 GHz demonstrates stable performance 相似文献
11.
Self-aligned high-frequency InP/InGaAs double heterojunction bipolar transistors (DHBTs) have been fabricated on a Si substrate. A current gain of 40 was obtained for a DHBT with an emitter dimension of 1.6 μm×19 μm. The S parameters were measured for various bias points. In the case of I C=15 mA, f T was 59 GHz at V CE=1.8 V, and f max was 69 GHz at V CE=2.3 V. Due to the InP collector, breakdown voltage was so high that a V CE of 3.8 V was applied for I C=7.5 mA in the S -parameter measurements to give an f T of 39 GHz and an f max of 52 GHz 相似文献
12.
Nguyen L.D. Radulescu D.C. Foisy M.C. Tasker P.J. Eastman L.F. 《Electron Devices, IEEE Transactions on》1989,36(5):833-838
An experimental study in which the quantum well width (W ) is varied from 45 to 200 Å is discussed. Optimum device performance was observed at a well width of 120 Å. The 0.2-μm×130-μm devices with 120-Å quantum-well width typically exhibit a maximum channel current density of 550 mA/mm, peak transconductance of 550 mS/mm, and peak current gain cutoff frequency ( f T) of 122 GHz. These results have been further improved in subsequent fabrications employing a trilevel-resist mushroom-gate process. The 0.2-μm×50-μm devices with mushroom gate exhibit a peak transconductance of 640 mS/mm, peak f T of 100 GHz, and best power gains cutoff frequency in excess of 200 GHz. These results are among the best ever reported for GaAs-based FETs and are attributed to the high two-dimensional electron gas (2DEG) sheet density, good low-field mobility, low ohmic contact, and the optimized mushroom gate process 相似文献
13.
The fabrication and characterization of a 0.25-μm-gate, ion-implanted GaAs MESFET with a maximum current-gain cutoff frequency f t of 126 GHz is reported. Extrapolation of current gains from bias-dependent S -parameters at 70-100% of I dss yields f 1's of 108-126 GHz. It is projected that an f 1 of 320 GHz is achievable with 0.1-μm-gate GaAs MESFETs. This demonstration of f 1's over 100 GHz with practical 0.25-μm gate length substantially advances the high-frequency operation limits of short-gate GaAs MESFETs 相似文献
14.
Mishra U.K. Jensen J.F. Rensch D.B. Brown A.S. Stanchina W.E. Trew R.J. Pierce M.W. Kargodorian T.V. 《Electron Device Letters, IEEE》1989,10(10):467-469
AlInAs-GaInAs heterojunction bipolar transistors (HBTs) and static flip-flop frequency dividers have been fabricated. An f t and an f max of 49 and 62 GHz, respectively, have been achieved in a device with a 2×5-μm2 emitter. Current-mode logic (CML) was used to implement static divide-by-two and divide-by-four circuits. The divide-by-two circuit operated at 15 GHz with 82-mW power dissipation for the single flip-flop. The divide-by-four circuit operated at 14.5 GHz with a total chip power dissipation of 444 mW 相似文献
15.
Zebda Y. Lai R. Bhattacharya P. Pavlidis D. Berger P.R. Brock T.L. 《Electron Devices, IEEE Transactions on》1991,38(6):1324-1333
The performance characteristics of a monolithically integrated front-end photoreceiver, consisting of a photodiode and a MODFET amplifier, were analyzed and measured. A vertical scheme of integration was initially used to realize a photoreceiver circuit on InP consisting of an InGaAs p-i-n diode, an InGaAs/InAlAs pseudomorphic MODFET, and passive circuit elements. The device structures were grown by single-step molecular beam epitaxy with an isolating layer in between. The microwave performance of 1-μm-gate MODFETs in the circuit is characterized by f T=9 GHz, although identical discrete devices have f T=30-35 GHz. The degradation is due to additional parasitic capacitances present in this integration scheme. In spite of this disadvantage the bandwidth of the circuit is 2.1 GHz. Integration of the p-i-n diode with 1.0- and 0.25-μm-gate MODFETs has also been done in a planar scheme using regrowth, and receiver bandwidths of 6.5 GHz were measured. This value is comparable to that of hybrid circuits with InP-based devices 相似文献
16.
Schmitz A.E. Walden R.H. Larson L.E. Rosenbaum S.E. Metzger R.A. Behnke J.R. Macdonald P.A. 《Electron Device Letters, IEEE》1991,12(1):16-17
0.35-μm complementary metal-oxide-semiconductor (CMOS)/silicon-on-sapphire (SOS) n- and p-channel MOSFETs with a metal-over-polysilicon T-gate structure for monolithic microwave integrated circuit (MMIC) and digital applications are reported. The measured values for the current-gain cutoff frequency f T were ⩾20 GHz for both n-channel and p-channel devices, and the values for the unilateral power-gain cutoff frequency f max were 37 GHz for the p-channel and 53 GHz for the n-channel MOSFETs. The low effective resistance of the T-gate structure contributed to the very high f max values. It is believed that these are the highest f T and f max values ever reported for MOS devices. The potential of SOS submicrometer MOSFETs for microwave circuit applications is demonstrated 相似文献
17.
Hayden J.D. Mele T.C. Perera A.H. Burnett D. Walczyk F.W. Lage C.S. Baker F.K. Woo M. Paulson W. Lien M. See Y.-C. Denning D. Cosentino S.J. 《Electron Devices, IEEE Transactions on》1992,39(7):1669-1679
A high-performance 0.5-μm BiCMOS technology has been developed. Three layers of polysilicon are used to achieve a compact four-transistor SRAM bit cell size of less than 20 μm2 by creating self-aligned bit-sense and V ss contacts. A WSix polycide emitter n-p-n transistor with an emitter area of 0.8×2.4 μm2 provides a peak cutoff frequency (f T) of 14 GHz with a collector-emitter breakdown voltage (BV CFO) of 6.5 V. A selectively ion-implanted collector (SIC) is used to compensate the base channeling tail in order to increase f T and knee current without significantly affecting collector-substrate capacitance. ECL gate delays as fast as 105 ps can be obtained with this process 相似文献
18.
A study of the high-frequency performance of short-gate ion-implanted GaAs MESFETs with gate lengths of 0.3 and 0.5 μm is discussed. Excellent DC and microwave performance have been achieved with an emphasis on the reduction of effective gate length during device fabrication. From f t of 83 and 48 GHz for 0.3-0.5-μm gate devices, respectively, an electron velocity of 1.5×107 cm/s is estimated. An f t of 240 GHz is also projected for a 0.1-μm-gate GaAs MESFET. These experimental results are believed to be comparable to those of the best HEMTs (high-electron-mobility transistors) reported and higher than those generally accepted for MESFETs 相似文献
19.
InAlAs-InGaAs HEMTs with 0.4- to 5-μm gate lengths have been fabricated and a maximum f T of 84 GHz has been obtained by a device with a 0.4-μm gate length. A simple analysis of their delay times was performed. It was found that gradual channel approximation with a field-dependent mobility model with E c of 5 kV/cm holds for long-channel devices (L g>2 μm), while a saturated velocity model with a saturated velocity of 2.7×107 cm/s holds for short-channel devices (L g<1 μm) 相似文献
20.
A SiGe-base heterojunction bipolar transistor with an extremely thin n hydrogenated amorphous Si (α-Si:H) emitter is proposed and characterized. The structure results in enhanced emitter injection efficiency, current gain, and frequency performance. The fabricated devices exhibited maximum current gains of 100 and Early voltages of 55 V. The unity current gain cutoff frequency (f T) for a device with an emitter size of 2 μm×4 μm was 8.5 GHz 相似文献