Surface immobilization of polymer brushes onto porous poly(vinylidene fluoride) membrane by electron beam to improve the hydrophilicity and fouling resistance

Poly(vinylidene fluoride) (PVDF) membrane was pre-irradiated by electron beam, and then poly(ethylene glycol) methyl ether methacrylate (PEGMA) was grafted onto the membrane surface in the aqueous solution. The degree of grafting was significantly influenced by the pH value of the reaction solution. The surface chemical changes were characterized by the Fourier transform infrared attenuated total reflection spectroscopy (FTIR-ATR) and X-ray photoelectron spectroscopy (XPS). Combining with the analysis of the nuclear magnetic resonance proton and carbon spectra (¹H NMR and ¹³C NMR), PEGMA was mainly grafted onto the membrane surface. Morphological changes were characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The porosity and bulk mean pore size changes were determined by a mercury porosimeter. The surface and bulk hydrophilicity were evaluated on the basis of static water contact angle, dynamic water contact angle and the dynamic adsorption process. Furthermore, relative high permeation fluxes of pure water and protein solution were obtained. All these results demonstrate that both hydrophilicity and fouling resistance of the PVDF membrane can be improved by the immobilization of hydrophilic comb-like polymer brushes on the membrane surface.     

Morphological and nanostructural features of porous silicon prepared by electrochemical etching

Porous layers were produced on a p-type (100) Si wafer by electrochemical anodic etching. The morphological, nanostructural and optical features of the porous Si were investigated as functions of the etching conditions. As the wafer resistivity was increased from 0.005 to 15 Ω·cm, the etched region exhibited ‘sponge’, ‘mountain’ and ‘column’-type morphologies. Among them, the sponge-type structured sample showed the largest surface area per unit volume. Silicon nanocrystallites, 2.0 to 5.3 nm in size, were confirmed in the porous layers. The photoluminescence peaks varied in the wavelength range of 615 to 722 nm. These changes in the maximum peak position were related to the size distribution of the Si crystallites in the porous silicon. The doping levels of the wafers significantly affect the size distribution of the Si crystallites as well as the light-emitting behavior of the etched Si, which contains nanoscale Si crystallites.     

Comparative study of initial stages of copper immersion deposition on bulk and porous silicon

Initial stages of Cu immersion deposition in the presence of hydrofluoric acid on bulk and porous silicon were studied. Cu was found to deposit both on bulk and porous silicon as a layer of nanoparticles which grew according to the Volmer-Weber mechanism. It was revealed that at the initial stages of immersion deposition, Cu nanoparticles consisted of crystals with a maximum size of 10 nm and inherited the orientation of the original silicon substrate. Deposited Cu nanoparticles were found to be partially oxidized to Cu₂O while CuO was not detected for all samples. In contrast to porous silicon, the crystal orientation of the original silicon substrate significantly affected the sizes, density, and oxidation level of Cu nanoparticles deposited on bulk silicon.     

Diffusion in porous silicon: effects on the reactivity of alkenes and electrochemistry of alkylated porous silicon

Alkenes are known to react with hydrogen-terminated silicon surfaces to produce robust organic monolayers that are attached to the surface via covalent SiC bonds. In this report we investigate the dependence of the rate of alkylation of porous silicon samples on the reaction time using photochemical initiation. The kinetics of the photochemical alkylation of hydrogen-terminated porous silicon by undec-1-ene in toluene were observed to be pseudo first order, however the apparent rate constant decreased as the concentration of undec-1-ene increased. This behaviour is opposite to what would be expected if the rate-limiting process was an elementary chemical reaction step involving the alkene. Instead, it suggests that transport of the alkene to reactive sites and in the correct orientation is the rate-limiting step. Comparison of the rates of alkylation of porous silicon by undec-1-ene and dimethoxytrityl (DMT)-undecenol is consistent with such an interpretation as the bulky DMT headgroup gives a lower rate of alkylation. The diffusion of some simple redox-active probe molecules in porous silicon was investigated using a scanning electrochemical microscope (SECM). The probe molecules are converted at diffusion-controlled rate at an inlaid disk ultramicroelectrode (UME) consisting of the cross-section of a microwire sealed in glass. If the microelectrode is placed a short distance above the porous silicon, the microelectrode current depends on kinetics of the electrochemical reactions at the porous silicon and the mass transport properties within the open thin layer cell formed by the microelectrode and the alkylated porous silicon. In order to differentiate the effects of finite heterogeneous kinetics at silicon from diffusion limitations, current-distance curves were fitted over a wide range of applied potentials (on the Si) and it was observed that the diffusion coefficient in the porous layer was strongly anisotropic. The measured diffusion rates are comparable to those in bulk water along the pores, but with negligible diffusion between pores. This indicates that few pore-pore interconnections exist in the porous silicon.     

Reduction of proximity effect in electron beam lithography by deposition of a thin film of silicon dioxide

We present a simple strategy to reduce the writing time of electron beam lithography (EBL) by using a highly sensitive Shipley’s UV-5 resist while reducing proximity effects by depositing a thin film of silicon dioxide (SiO₂) on silicon substrate. It was found that a simple insertion of a thin SiO₂ film greatly reduced proximity effects, thereby providing enhanced resolution and better pattern fidelity. To support this conclusion, the bottom line width and sidewall slope of the developed pattern were analyzed for each substrate with different film thickness.     

Nanostructures formed by displacement of porous silicon with copper: from nanoparticles to porous membranes

ABSTRACT: The application of porous silicon as a template for the fabrication of nanosized copper objects is reported. Three different types of nanostructures were formed by displacement deposition of copper on porous silicon from hydrofluoric acid-based solutions of copper sulphate: (1) copper nanoparticles, (2) quasi-continuous copper films, and (3) free porous copper membranes. Managing the parameters of porous silicon (pore sizes, porosity), deposition time, and wettability of the copper sulphate solution has allowed to achieve such variety of the copper structures. Elemental and structural analyses of the obtained structures are presented. Young modulus measurements of the porous copper membrane have been carried out and its modest activity in surface enhanced Raman spectroscopy is declared.     

Tunable resonance transmission modes in hybrid heterostructures based on porous silicon

ABSTRACT: In this work, we report the experimental results and theoretical analysis of strong localization of resonance transmission modes generated by hybrid periodic/quasiperiodic heterostructures (HHs) based on Porous Silicon (PSi). The HHs are formed by stacking a quasiperiodic Fibonacci (FN) substructure between two Distributed Bragg Reflectors (DBRs). FN substructure defines the number of strong localized modes that can be tunable at any given wavelength and be unfolded when a partial periodicity condition is imposed. These structures show interesting properties for biomaterials research, biosensor applications and basic studies of adsorption of organic molecules. We also demonstrate the sensitivity of HHs to material infiltration.     

Hybrid nanostructure of polypyrrole and porous silicon prepared by galvanostatic technique

Nanostructured porous silicon (PS) layer is prepared in a lightly doped p-type substrate (with pores < 5 nm) and used as a working electrode to deposit conducting polypyrrole (PPy) by the electrochemical oxidative polymerization technique in an organic liquid phase. Three distinguishable stages of PPy deposition are observed and recorded under constant applied current: nucleation of polymer at the pore bottom, unidirectional growth of PPy inside the pores, and polymerization outside the PS surface. The hybrid nanostrucutre of PS/PPy shows a significant improvement of electrical conductivity as opposed to the unmodified PS layer. The improved conductivity is observed in spite of the formation of insulating layer of silicon oxides as detected by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) measurements. Systematic study of fabrication and characterization of this organic-inorganic heterosystem, quantification of the PPy in the PS matrix, and the mechanism of filling the nanopores with polymer are presented and thoroughly discussed.     

Recycling photovoltaic silicon waste for fabricating porous mullite ceramics by low-temperature reaction sintering

In this study, porous mullite ceramics with coral-like structures were fabricated at a low temperature of 900 °C by using photovoltaic silicon waste (PSW) as the silicon source directly. The effects of additive content and sintering temperature on the mullitization reaction of green bodies were studied. The results showed that ammonium molybdate tetrahydrate molybdenum (H₂₄Mo₇N₆O₂₄·4H₂O) as an additive could reduce the reaction temperature for mullitization from 1100 °C to 900 °C. The research on the influence of catalyst on material properties showed that porous mullite ceramics with a flexural strength of 52.83 MPa, a 41.78 % porosity, a sintering expansion rate of 0.49 % and an average pore size of 0.23 μm could be fabricated by introducing 7.5 % H₂₄Mo₇N₆O₂₄·4H₂O at the sintering temperature of 1000 °C. This study develops an environment-friendly recycling method of PSW and provides a new idea for the low-cost preparation of porous mullite ceramics with high purity.     

Enhanced photoluminescence of porous silicon nanoparticles coated by bioresorbable polymers

A significant enhancement of the photoluminescence (PL) efficiency is observed for aqueous suspensions of porous silicon nanoparticles (PSiNPs) coated by bioresorbable polymers, i.e., polylactic-co-glycolic acid (PLGA) and polyvinyl alcohol (PVA). PSiNPs with average size about 100 nm prepared by mechanical grinding of electrochemically etched porous silicon were dispersed in water to prepare the stable suspension. The inner hydrophobic PLGA layer prevents the PSiNPs from the dissolution in water, while the outer PVA layer makes the PSiNPs hydrophilic. The PL quantum yield of PLGA/PVA-coated PSiNPs was found to increase by three times for 2 weeks of the storage in water. The observed effect is explained by taking into account both suppression of the dissolution of PSiNPs in water and a process of the passivation of nonradiative defects in PSiNPs. The obtained results are interesting in view of the potential applications of PSiNPs in bioimaging.     

Electromagnetic wave-transparent porous silicon nitride ceramic prepared by gel-casting combined with in-situ nitridation reaction

To achieve the balance between mechanical properties and electromagnetic wave-transparent properties of porous silicon nitride (Si₃N₄), the key is to form an interlocking microstructure constituted by columnar β-Si₃N₄ crystals. This structure can be realized by liquid-phase sintering. However, grain boundaries which affect high temperature properties and volume shrinkage during sintering are inevitable. We proposed a strategy to realize this structure by gel-casting of β-Si₃N₄ whisker (Si₃N_4w) and Si powder followed by in-situ nitridation of Si. To achieve chemically-stable slurry containing micro-sized Si with low viscosity, a novel formulation was developed. Two key structural parameters of the interlocking Si₃N_4w network, i.e., density of the Si₃N_4w skeleton and inter-whisker bonding mode, were adjusted by composition of raw materials and nitridation temperature. The flexural strength, dielectric constant and loss of the porous ceramics are 44.9 MPa, 2.7 and 2 × 10⁻³, when the volume fraction of Si₃N_4w/Si is 5 and the nitriding temperature is 1400 °C.     

Effect of potential steps on porous silicon formation

Porous silicon microstructures were fabricated by applying potential steps through which both anodic and cathodic potentials were periodically applied to silicon wafers. The electrochemical behaviors of porous silicon layers were examined by performing polarization measurements, followed by analyzing the open-circuit potential (E_ocp) and the reaction rate in terms of corrosion current density (j_corr). The surface morphologies and surface products of porous silicon were characterized by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). It was found that the values of E_ocp and j_corr varied more significantly and irregularly during different polarization stages when the potentials were continuously applied to the wafer surface, while virtually unchanged after 2 min of periodic potential application. In addition, slower reaction rates were observed with applying potential steps, as indicated by smaller values of j_corr. The enhancement on refreshment of silicon surfaces by periodic potential polarization significantly accelerated the growth of porous silicon. The microstructures became more uniformed and better defined due to the improved passivating nature of wafer surfaces.     

Modification of optical and electrical properties of zinc oxide-coated porous silicon nanostructures induced by swift heavy ion

Morphological and optical characteristics of radio frequency-sputtered zinc aluminum oxide over porous silicon (PS) substrates were studied before and after irradiating composite films with 130 MeV of nickel ions at different fluences varying from 1 × 10¹² to 3 × 10¹³ ions/cm². The effect of irradiation on the composite structure was investigated by scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), and cathodoluminescence spectroscopy. Current–voltage characteristics of ZnO-PS heterojunctions were also measured. As compared to the granular crystallites of zinc oxide layer, Al-doped zinc oxide (ZnO) layer showed a flaky structure. The PL spectrum of the pristine composite structure consists of the emission from the ZnO layer as well as the near-infrared emission from the PS substrate. Due to an increase in the number of deep-level defects, possibly oxygen vacancies after swift ion irradiation, PS-Al-doped ZnO nanocomposites formed with high-porosity PS are shown to demonstrate a broadening in the PL emission band, leading to the white light emission. The broadening effect is found to increase with an increase in the ion fluence and porosity. XRD study revealed the relative resistance of the film against the irradiation, i.e., the irradiation of the structure failed to completely amorphize the structure, suggesting its possible application in optoelectronics and sensing applications under harsh radiation conditions.     

Transient surface photovoltage studies of bare and Ni-filled porous silicon performed in different ambients

Mesoporous silicon and porous silicon/Ni nanocomposites have been investigated in this work employing light-dark surface photovoltage (SPV) transients to monitor the response of surface charge dynamics to illumination changes. The samples were prepared by anodization of a highly n-doped silicon wafer and a subsequent electrodepositing of Ni into the pores. The resulting pores were oriented towards the surface with an average pore diameter of 60 nm and the thickness of the porous layer of approximately 40 μm. SPV was performed on a bare porous silicon as well as on a Ni-filled porous silicon in vacuum and in different gaseous environments (O₂, N₂, Ar). A significant difference was observed between the ‘light-on’ and ‘light-off’ SPV transients obtained in vacuum and those observed in gaseous ambiences. Such behavior could be explained by the contribution to the charge exchange in gas environments from chemisorbed and physisorbed species at the semiconductor surface.

PACS

81.05.Rm; 73.20.-r; 75.50.-y; 82.45.Yz     

Fabrication of porous silicon by metal-assisted etching using highly ordered gold nanoparticle arrays

ABSTRACT: A simple method for the fabrication of porous silicon (Si) by metal-assisted etching was developed using gold nanoparticles as catalytic sites. Etching masks were prepared by spin-coating of colloidal gold nanoparticles onto Si. Appropriate functionalization of the gold nanoparticle surface prior to the deposition step enabled the formation of quasi-hexagonally ordered arrays by self-assembly which were translated into an array of pores by subsequent etching in a HF solution containing H2O2. The quality of the pattern transfer depended on the chosen preparation conditions for the gold nanoparticle etching mask. The influence of the Si surface properties were investigated by using either hydrophilic or hydrophobic Si substrates resulting from piranha solution or HF treatment, respectively. The polymer coated gold nanoparticles had to be thermally treated in order to provide direct contact at the metal/Si interface which is required for the following metal-assisted etching. Plasma-treatment as well as flame annealing were successfully applied. Best results were obtained for Si substrates which were treated with HF prior to spin-coating and flame annealed in order to remove the polymer matrix. The presented method opens up new resources for the fabrication of porous silicon by metal-assisted etching. Here, the vast variety of metal nanoparticles accessible by well-established wet-chemical synthesis can be employed for the fabrication of the etching masks.     

Light-harvesting bio-nanomaterial using porous silicon and photosynthetic reaction center

ABSTRACT: Porous silicon microcavity (PSiMc) structures were used to immobilize the photosynthetic reaction center (RC) purified from the purple bacterium Rhodobacter sphaeroides R-26. Two different binding methods were compared by specular reflectance measurements. Structural characterization of PSiMc was performed by scanning electron microscopy and atomic force microscopy. The activity of the immobilized RC was checked by measuring the visible absorption spectra of the externally added electron donor, mammalian cytochrome c. PSi/RC complex was found to oxidize the cytochrome c after every saturating Xe flash, indicating the accessibility of specific surface binding sites on the immobilized RC, for the external electron donor. This new type of bio-nanomaterial is considered as an excellent model for new generation applications of silicon-based electronics and biological redox systems.     

Direct patterning of silver particles on porous silicon by inkjet printing of a silver salt via in-situ reduction

ABSTRACT: We have developed a method for obtaining a direct pattern of silver nanoparticles (NPs) on porous silicon (p-Si) by means of inkjet printing (IjP) of a silver salt. Silver NPs were obtained by p-Si mediated in-situ reduction of Ag+ cations using solutions based on AgNO3 which were directly printed on p-Si according to specific geometries and process parameters. The main difference with respect to existing literature is that normally, inkjet printing is applied to silver (metal) NP suspensions, while in our experiment the NPs are formed after jetting the solution on the reactive substrate. We performed both optical and scanning electron microscopes on the NPs traces, correlating the morphology features with the IjP parameters, giving an insight on the synthesis kinetics. The patterned NPs show good performances as SERS substrates.     

Thermally promoted addition of undecylenic acid on thermally hydrocarbonized porous silicon optical reflectors

Thermally promoted addition of undecylenic acid is studied as a method for modifying porous silicon optical reflectors that have been pre-treated with thermal hydrocarbonization. Successful derivatization of undecylenic acid is demonstrated and confirmed with Fourier transform infrared and X-ray photoelectron spectroscopies. The results indicate that the hydrocarbonization pre-treatment considerably improves stability against oxidation and chemical dissolution in basic environments. The two-step treatment also does not cause an appreciable change on sample reflectance spectra, which enables the use of the functionalized structures in optical sensing applications.     

The effect of etching temperature on the photoluminescence emitted from, and the morphology of, p-type porous silicon

The temperature at which silicon is electrochemically etched has been found to influence the structure and photoluminescence properties of porous silicon. Decreasing the temperature increased both the current efficiency of the dissolution process and the porosity of the resulting porous layer. Furthermore, a blue-shift was observed in the photoluminescence indicating that the decreased temperature allowed smaller nanocrystals to be formed. An analysis of temperature dependence of the pore initiation and propagation models currently available in the literature failed to yield a satisfactory explanation for the decrease in the average size of the nanocrystals indicated by the results presented in the present paper. Therefore it was proposed that at lower temperature smaller nanocrystals are stabilized due to a combination of their reduced solubility and the increased viscosity of the diffusion layer that leads to a higher localized concentration of silicon ions, thereby allowing smaller nanocrystals to be in equilibrium with their surroundings. The fact that previous authors did not observe blue-shifting highlights the importance of the composition of the etching solution in controlling the quality of the porous silicon produced.     

Purification of silicon powder by the formation of thin porous layer followed by photo-thermal annealing

ABSTRACT: Porous silicon has been prepared using a vapor-etching based technique on a commercial silicon powder. Strong visible emission was observed in all samples. Obtained silicon powder with a thin porous layer at the surface was subjected to a photo-thermal annealing at different temperatures under oxygen atmosphere followed by a chemical treatment. Inductively Coupled Plasma Atomic Emission Spectrometry (ICP-AES) results indicate that silicon purity is im-proved from 99.1 to 99.994 % after annealing at 900 degreesC.