引入了流体动力学模型的单载流子光探测器的优化

本文中,通过引入了流体动力学模型对单载流子光探测器的特性进行了模拟,并对模拟结果做了分析和研究。在此基础上,提出了改进器件的方法,进而得到了一个优化的器件,优化后的器件将带宽提高到了原器件的两倍。     

高饱和电流光电探测器在低噪声系数和高增益RoF光链路中的应用

研究了光载无线通信(RoF)链路中掺Er3+光纤放大器(EDFA)对链路噪声系数(NF)和增益的影响,同时采用自制的具有高响应度、高饱和功率特性单载子传输光电探测器(UTC-PD)作为链路光电转换器件,在不以NF为代价的同时使得链路增益性能获得大幅提升。实验表明,对于由LD、马赫-曾德调制器(MZM)、EDFA、光滤波器(OBPF)和UTC-PD组成的RoF光链路,在LD输出功率为17dBm、UTC-PD的输出平均光电流为60mA时得到最低链路NF为30.3dB,相比不含EDFA的基本链路在LD输出光功率同为17dBm时的NF略小0.4dB;同时链路增益高达15.5dB,相比基本链路大幅提升了41.3dB。     

超晶格雪崩光电二极管的结构优化及性能研究

基于碰撞离化理论研究了异质材料超晶格结构对载流子离化率的作用,设计得到In0.53Ga0.47As/In0.52Al0.48As超晶格结构的雪崩光电二极管。通过分析不同结构参数对器件性能的影响,得到了低隧道电流、高倍增因子的超晶格结构雪崩层,根据电场分布方程模拟了器件二维电场分布对电荷层厚度及掺杂的依赖关系,并优化了吸收层的结构参数。对优化得到的器件结构进行仿真并实际制作了探测器件,进行光电特性测试,与同结构普通雪崩光电二极管相比,超晶格雪崩光电二极管具有更强的光电流响应,在12.5~20 V的雪崩倍增区,超晶格雪崩光电二极管在具备高倍增因子的同时具有较低的暗电流,提高了器件的信噪比。     

水火电力系统节能调度模型与优化方法研究

本文针对水火电力系统节能调度模型与优化方法进行分析研究.     

一种新颖的具有带隙结构的误差放大器设计

电源电压过低时,开关电源转换器中的带隙基准源及误差放大器不能正常工作,针对这一问题提出了一款低电压具有带隙结构的误差放大器.本文阐述了该结构的工作原理,并对整体结构进行分析.采用0.8 tan BiCMOS工艺,在1.4 V的电源电压下,通过HSPICE进行前仿真验证,得到其开环增益为63.4 dB,电源抑制比为106.4 dB.     

均匀、阶梯和线性掺杂漂移区SOI RESURF器件的统一击穿模型

提出了一个均匀、阶梯和线性掺杂漂移区SOI高压器件的统一击穿模型.基于分区求解二维Poisson方程,得到了不同漂移区杂质分布的横向电场和击穿电压的统一解析表达式.借此模型并对阶梯数从0到无穷时器件结构参数对临界电场和击穿电压的影响进行了深入研究.从理论上揭示了在厚膜SOI器件中用阶梯掺杂取代线性漂移区,不但可以保持较高的耐压,而且降低了设计和工艺难度.解析结果、MEDICI仿真结果和实验结果符合良好.     

Unified Breakdown Model of SOI RESURF Device with Uniform/Step/Linear Doping Profile

A unified breakdown model of SOI RESURF device with uniform,step,or linear drift region doping profile is firstly proposed.By the model,the electric field distribution and breakdown voltage are researched in detail for the step numbers from 0 to infinity.The critic electric field as the function of the geometry parameters and doping profile is derived.For the thick film device,linear doping profile can be replaced by a single or two steps doping profile in the drift region due to a considerable uniformly lateral electric field,almost ideal breakdown voltage,and simplified design and fabrication.The availability of the proposed model is verified by the good accordance among the analytical results,numerical simulations,and reported experiments.     

一种改进的CMOS紫外/蓝光光电二极管的二维响应度物理模型

A CMOS UV and blue-extended photodiode is presented and fabricated for light detection in the ultraviolet/blue spectral range. An octagon homocentric ring-shaped geometry is used to improve the ultraviolet responsivity and suppress edge breakdown. This paper has established a two-dimensional responsivity physical model for the presented photodiode and given some numerical analyses. The dead layer effect, which is caused by the high-doping effects and boron redistribution, is considered when analyzing the distribution of the current of the proposed UV and blue-extended photodiode. In the dead layer, the boron doping profile decreases towards the surface. Simulated results illustrate that the responsivity in the UV range is obviously decreased by the effect of the dead layer, while it is not affected in the visible and near-infrared part of the spectrum. The presented photodiode is fabricated and the silicon tested results are given, which agree well with the simulated ones.     

平面型金属-电介质光子带隙结构的表面电磁波传输特性

研究了一种平面型金属—电介质光子带隙结构的表面电磁波传输特性。该材料利用常规的印刷电路板技术制作．其金属单元的平面斑图(pattern)分别为六角形和方形两种，空间层状结构为二层与三层两种。在1—20GHz范围内对TE表面波传输情况进行了测试，观察到了TE表面波的能隙结构。不同结构的测试结果表明，三层结构的材料具有较低的禁带中心频率。用局域电感—电容模型定型解释了本文的实验结果。     

CMOS图像传感器钳位光敏二极管夹断电压模型研究

A novel analytical model of pinch-off voltage for CMOS image pixels with a pinned photodiode structure is proposed. The derived model takes account of the gradient doping distributions in the N buried layer due to the impurity compensation formed by manufacturing processes; the impurity distribution characteristics of two boundary PN junctions located in the region for particular spectrum response of a pinned photodiode are quantitative analyzed. By solving Poisson＇s equation in vertical barrier regions, the relationships between the pinch-off voltage and the corresponding process parameters such as peak doping concentration, N type width and doping concentration gradient of the N buried layer are established. Test results have shown that the derived model features the variations of the pinch-off voltage versus the process implant conditions more accurately than the traditional model. The research conclusions in this paper provide theoretical evidence for evaluating the pinch-off voltage design.     

有n缓冲层SOI RESURF结构的电场分布解析模型

提出了有n缓冲层SOI RESURF结构的电场分布解析模型,采用MEDICI数值仿真,验证了上述模型的正确性。基于所建立的解析模型,获得了缓冲层的最优杂质浓度分布,提出了提高SOI RESURF结构耐压的缓冲层分段变掺杂新结构。     

Design and Realization of a Novel Compact Electromagnetic Band-Gap Structure

A novel compact electromagnetic band-gap (EBG) structure constructed by etching two reverse split rings (RSRs) and inserting interleaving edge (IE) on the patch of conventional mushroom-like EBG (CML-EBG) is investigated. Simulated dispersion diagrams show that the proposed EBG structure presents a 13.6% size reduction in the center frequency of the bandgap. Two comparisons have been carried out for the analysis of the effect of the RSRs and IE configuration. Then, a sample of this novel EBG is fabricated and tested, further experimental data agree well with the simulated results. Thus, this EBG structure makes a good candidate to decrease mutual coupling in compact microstrip patch array.     

Understanding convolutional neural networks with a mathematical model

This work attempts to address two fundamental questions about the structure of the convolutional neural networks (CNN): (1) why a nonlinear activation function is essential at the filter output of all intermediate layers? (2) what is the advantage of the two-layer cascade system over the one-layer system? A mathematical model called the “REctified-COrrelations on a Sphere” (RECOS) is proposed to answer these two questions. After the CNN training process, the converged filter weights define a set of anchor vectors in the RECOS model. Anchor vectors represent the frequently occurring patterns (or the spectral components). The necessity of rectification is explained using the RECOS model. Then, the behavior of a two-layer RECOS system is analyzed and compared with its one-layer counterpart. The LeNet-5 and the MNIST dataset are used to illustrate discussion points. Finally, the RECOS model is generalized to a multilayer system with the AlexNet as an example.     

探测器非线性对微波光子链路性能的影响

提出了一种新的光电探测器（PD）非线性模型,进而分析了PD非线性对系统增益及三阶无杂散动态范围（SFDR3）的影响。实验表明,当调制器的直流偏置角变化时,含PD非线性的实际链路与忽略PD非线性的理想链路相比,信号增益的最大值将下降1．7dB,SFDR3最大值下降3dB,因此在高性能链路中考虑探测器非线性是十分必要的。     

Window-based rate control for video quality optimization with a novel INTER-dependent rate-distortion model

Most model-based rate control schemes use independent rate-distortion (R–D) models at macroblock (MB) level to represent the relationship among bit rate, distortion and encoding complexity. However the correlations between frames (INTER-dependency) are not well considered for distortion, bit allocation and quantization parameter (QP) decision. In this paper, a novel INTER-dependent R–D model is proposed based on the theoretical analysis of the relationship between the predicted residual of one frame and the distortion of its reference frame. To achieve both bit rate accuracy and consistent video quality, a window-based rate control scheme with two sliding windows is introduced. One window is to group certain previously encoded frames and current frame to control the bit rate and buffer delay; the other is to group certain future encoding frames to optimize the fluctuation of video quality. Furthermore, the optimization of Lagrange multiplier is also discussed under the INTER-dependent situation. Experimental results demonstrate that the proposed window-based rate control scheme with INTER-dependent R–D model can achieve accurate target bit rate and improve PSNR performance, meanwhile the variation of PSNR is the smallest compared with other three benchmark algorithms. This one-pass rate control scheme is highly practical for the real-time video coding applications.     

一种VLD结构VDMOS终端设计

垂直双扩散金属氧化物场效应晶体管(Vertical Double-diffused Metal-Oxide-Semiconductor Field Effect Transistor,VDMOS)终端设计中,场限环结构被广泛应用,但随着器件耐压的增加,场限环终端在效率、占用面积方面的劣势也越发明显。结合横向变掺杂的原理,在成熟的场限环工艺基础上,只更改深阱杂质注入窗口大小与距离,设计了一种800 V VDMOS终端结构,击穿电压仿真值达到938.5 V,为平行平面结击穿电压的93.29%,有效终端长度仅为137.4 μm。     

基于贝叶斯动态模型的某器件性能预测

在导弹武器系统当中,及时准确的故障预报对提高导弹的安全性具有极其重要的意义。本文根据导弹惯性器件故障预报系统的设计要求,利用贝叶斯动态线性模型对导弹某惯性器件的性能进行了预测研究。贝叶斯预测是利用历史信息和从样本获得的信息来获取后验分布的一种预测方法,该方法不需要平稳性的假设,而且充分利用了已有的信息,可以用来对电子设备的性能进行预测。实例研究表明,该方法具有比较好的预测效果。     

漂移区为线性掺杂的高压薄膜SOI器件的研制

给出了漂移区为线性掺杂的高压薄膜SOI器件的设计原理和方法.在Si膜厚度为0.15μm、隐埋氧化层厚度为2μm的SOI硅片上进行了LDMOS晶体管的制作.首次对薄膜SOI功率器件的击穿电压与线性掺杂漂移区的杂质浓度梯度的关系进行了实验研究.通过对漂移区掺杂剂量的优化,所制成的漂移区长度为50μm的LDMOS晶体管呈现了高达612V的击穿电压.     

一种用于优化小尺寸背照式CMOS图像传感器满阱容量与量子效率的新型光电二极管结构

为改善小尺寸背照式CMOS图像传感器像素单元满阱容量不足缺点,本文基于提高光电二极管电容的角度,提出了一种通过改变光电二极管结构来提升满阱容量的新方法。该结构优化由两步实现。第一步,通过在传统光电二极管N型区域下额外注入高能量、低剂量N型掺杂,形成一个浓度渐变,深度扩展的新光电二极管N型区。这种光电二极管的满阱容量将因侧壁结电容的扩展而显著提高;第二步,为了帮助扩展的阱容量实现全耗尽,一个由两步不同能量的P型杂质形成的P型插入区被嵌入到深度得以扩展的光电二极管N型区域内。这个纵向插入的P型插入区保证了该光电二极管结构可以在复位完成后实现电子的全耗尽。仿真结果显示,像素单元满阱容量可以由初始的1289e- 提升到6390e-,且该阱容量扩展技术不会以恶化图像拖尾为代价。除此之外,量子效率在全波段下均得以提升,尤其在520nm处提升6.3%。这项改进不仅可以用于背照式像素结构,而且可以被用于任何PD型正面照射式像素结构中。     

系统安全工程能力成熟模型评估方法

系统安全工程能力成熟模型评估方法（SSAM）是利用系统安全工程能力成熟模型（SSE－CMM）评价组织的过程能力或企业的系统安全工程功能的方法，本文结合SSAM的结构介绍了使用SSAM的基本过程和思想。