A 100-ps time-resolution CMOS time-to-digital converter for positron emission tomography imaging applications

An integrated CMOS subnanosecond time-to-digital converter (TDC) has been developed and evaluated for positron emission tomography (PET) front-end applications. The TDC architecture combines an accurate digital counter and an analog time interpolation circuit to make the time interval measurement. The dynamic range of the TDC is programmable and can be easily extended without any timing resolution degradation. The converter was designed to operate over a reference clock frequency range of 62.5 MHz up to 100 MHz and can have a bin size as small as 312.5 ps LSB with 100-ns conversion times. Measurements indicate the TDC achieves a DNL of under /spl plusmn/0.20 LSB and INL less than /spl plusmn/0.30 LSB with an rms timing resolution of 0.312 LSB (97.5 ps), very close to the theoretical limit of 0.289 LSB (90 ps). The design is believed to be the first fully integrated CMOS subnanosecond TDC used in PET medical imaging and the first realization of a CMOS TDC that achieves an rms timing resolution below 100 ps within a 100-ns conversion time.     

基于40纳米CMOS工艺的500-MS/s 10-bit三通道电流舵型DAC的鲁棒性设计

A 500-MS/s 10-bit triple-channel current-steering DAC in 40 nm 1P8M CMOS advanced technology is proposed.The central symmetry random walk scheme is applied for current source arrays to avoid mismatching effects in nano-CMOS design.The high-speed latch drivers can be self-adaptively connected to switches in different voltage domains.The experimental data shows that the maximum DNL and INL are 0.42 LSB and 0.58 LSB.The measured SFDR at 1.7 MHz output signal is 58.91 dB,58.53 dB and 56.98 dB for R/G/B channels,respectively.The DAC has good static and dynamic performance despite the single-ended output.The average rising time and falling time of three channels are 0.674 ns and 0.807 ns.The analog/digital power supply is 3.3 V/1.1 V.This triple-channel DAC occupies 0.5656 mm2.     

Design of a laminated current cell relocation 12-bit CMOS D/A converter with a high output impedance technique and a merged switching logic

A compact and low power 12-bit 300 MS/s current steering CMOS D/A converter is presented. The architecture of the D/A converter is based on the current steering 6 + 6 segmented type with a laminated current cell relocation technique. In order to improve the linearity and glitch noise, a high output impedance analog current cell is designed. Furthermore, for the purpose of reducing the chip area and power dissipation, a noble merged switching logic and a compact layout technique are proposed. To verify its performance, the chip was fabricated with 0.13 μm thick-gate 1-poly 6-metal N-well Samsung CMOS technology. The effective chip area is 0.26 mm² (510 × 510 μm) with a power consumption of 100 mW. The measured INL and DNL are within ±3LSB and ±1LSB, respectively. The measured SFDR is about 70 dB, when the input frequency is 1 MHz at a clock frequency of 300 MHz.     

A 12-bit, 1-MHz, two-step flash ADC

A monolithic 12-b 1 MHz, two-step flash analog-to-digital converter (ADC) has been implemented in standard 3-μm CMOS technology. A 12-b accurate reference bank incorporating a switched-capacitor integrator and a bank of 66 sample-and-hold amplifiers is discussed. Self-calibration techniques are used to correct for the converter offset, gain, and nonlinearity errors. The converter differential nonlinearity errors below 1/2 LSB and the S/(N+D) signal to noise is 70 dB for 100-kHz analog input     

A high performance 90 nm CMOS SAR ADC with hybrid architecture

A 10-bit 2.5 MS/s SAR A/D converter is presented. In the circuit design, an R-C hybrid architecture D/A converter, pseudo-differential comparison architecture and low power voltage level shifters are utilized. Design chal-lenges and considerations are also discussed. In the layout design, each unit resistor is sided by dummies for good matching performance, and the capacitors are routed with a common-central symmetry method to reduce the nonlin-earity error. This proposed converter is implemented based on 90 nm CMOS logic process. With a 3.3 V analog supply and a 1.0 V digital supply, the differential and integral nonlinearity are measured to be less than 0.36 LSB and 0.69 LSB respectively. With an input frequency of 1.2 MHz at 2.5 MS/s sampling rate, the SFDR and ENOB are measured to be 72.86 dB and 9.43 bits respectively, and the power dissipation is measured to be 6.62 mW including the output drivers. This SAR A/D converter occupies an area of 238×214 μm~2. The design results of this converter show that it is suitable for multi-supply embedded SoC applications.     

一种1.5 V 8位100 MS/s电流舵D/A转换器

基于新型的低压与温度成正比(PTAT)基准源和PMOS衬底驱动低压运算放大器技术,采用分段温度计译码结构设计了一种1.5V8位100MS/s电流舵D/A转换器,工艺为TSMC0.25μm2P5MCMOS。当采样频率为100MHz,输出频率为20MHz时,SFDR为69.5dB,D/A转换器的微分非线性误差(DNL)和积分非线性误差(INL)的典型值分别为0.32LSB和0.52LSB。整个D/A转换器的版图面积为0.75mm×0.85mm,非常适合SOC的嵌入式应用。     

Design and verification of a 10-bit 1.2-V 100-MSPS D/A IP core based on a 0.13-μm low power CMOS process

Based on a low supply voltage curvature-compensated bandgap reference and central symmetry Q~2 random walk NMOS current source layout routing method,a 1.2-V 10-bit 100-MSPS CMOS current-steering digital-to-analog converter is implemented in a SMIC 0.13-μm CMOS process.The total consumption is only 10 mW from a single 1.2-V power supply,and the integral and differential nonlinearity are measured to be less than 1 LSB and 0.5 LSB, respectively.When the output signal frequency is 1-5 MHz at 100-MSPS samplin...     

A 10-b 125-MHz CMOS digital-to-analog converter (DAC) withthreshold-voltage compensated current sources

This paper describes a 10-b high-speed COMS DAC fabricated by 0.8-μm double-poly double-metal CMOS technology. In the DAC, a new current source called the threshold-voltage compensated current source is used in the two-stage current array to reduce the linearity error caused by inevitable current variations of the current sources. In the two-stage weighted current array, only 32 master and 32 slave unit current sources are required. Thus silicon area and stray capacitance can be reduced significantly. Experimental results show that a conversion rate of 125 MHz is achievable with differential and integral linearity errors of 0.21 LSB and 0.23 LSB, respectively. The power consumption is 150 mW for a single 5-V power supply. The rise/fall time is 3 ns and the full-scale settling time to ±1/2 LSB is within 8 ns. The chip area is 1.8 mm×1.0 mm     

A 1.8-V 1.6-GSample/s 8-b self-calibrating folding ADC with 7.26 ENOB at Nyquist frequency

This study demonstrates for the first time the significant performance enhancement that calibration brings to folding-interpolating analog-to-digital converters (ADCs). The resulting 1.8-V ADC in 0.18-/spl mu/m CMOS achieves a conversion rate exceeding 1.6 GSample/s, since the amplifier device sizes can be minimized to maximize speed without the restriction of device matching. At 1.6 GS/s, the ADC achieves 0.15 LSB DNL, 0.35 LSB INL, 7.6 effective number of bits (ENOBs) at 100 MHz input, and 7.26 ENOB at Nyquist. At this speed, current consumption from a single 1.8-V supply is 245 mA analog, 185 mA digital, and 90 mA for the LVDS drivers. The ac performance is approximately 1.5 ENOBs higher compared to the same circuit with calibration disabled. The use of best design practices to optimize the ADC linearity prior to introducing calibration resulted in this small required dynamic calibration range, simplifying the calibrator circuitry and resulting in stable continuous performance over time without recalibration. Therefore, the fully on-chip calibration is performed automatically, just one time at power-up.     

采用改进型1.5位/级结构的10位100MHz流水线模数转换器

介绍了一个采用改进型1.5位/级结构的10位100MHz流水线结构模数转换器.测试结果表明,模数转换器的信噪失真比最高可以达到57dB,在100MHz输入时钟下,输入信号为57MHz的奈奎斯特频率时,信噪失真比仍然可以达到51dB.模数转换器的差分非线性和积分非线性分别为0.3LSB和1.0LSB.电路采用0.18μm混合信号CMOS工艺实现,芯片面积为0.76mm2.     

A 10-bit 100-MS/s CMOS pipelined folding A/D converter

This paper presents a 10-bit 100-MSample/s analog-to-digital（A/D） converter with pipelined folding architecture.The linearity is improved by using an offset cancellation technique and a resistive averaging interpolation network.Cascading alleviates the wide bandwidth requirement of the folding amplifier and distributed interstage track/hold amplifiers are used to realize the pipeline technique for obtaining high resolution.In SMIC 0.18μm CMOS,the A/D converter is measured as follows:the peak integral nonlinearity and differential nonlinearity are±0.48 LSB and±0.33 LSB,respectively.Input range is 1.0 V_P-P with a 2.29 mm² active area.At 20 MHz input @ 100 MHz sample clock,9.59 effective number of bits,59.5 dB of the signal-to-noise-and-distortion ratio and 82.49 dB of the spurious-free dynamic range are achieved.The dissipation power is only 95 mW with a 1.8 V power supply.     

A Fully Integrated Current-Steering 10-b CMOS D/A Converter with a Self-Calibrated Current Bias Circuit

A fully integrated current-steering 10-b CMOS Digital-to-Analog Converter with internal termination resistors is presented. In order to improve the device-mismatching problem of internal termination resistors, a self-calibrated current bias circuit is designed. With the self-calibrated current bias circuit, the gain error of the output voltage swing is reduced within 0.5%. For the purpose of reducing glitch noises, further, a novel current switch based on a deglitching circuit is proposed. The prototype circuit has been fabricated with a 3 V 0.35 μm 2-poly 3-metal CMOS technology, and it occupies 1350 × 750 μm silicon area with 45 mW power consumption. The measured INL and DNL are within 0.5 LSB, respectively. The measured SFDR is about 65 dB, when an input signal is about 8 MHz at 100 MHz clock frequency.     

A 130-MHz 8-b CMOS video DAC for HDTV applications

In order to achieve monotonicity and a high-speed performance, a current-cell matrix configuration and a parallel decoding circuit with one-stage latches have been used. A deglitching circuit has been introduced in the decoding stages to guarantee a low glitch energy. P-channel devices used as current sources ensure a low noise level and a ground-referenced voltage output in a doubly terminated 75-Ω transmission line. Experimental results have shown that the maximum conversion rate is 130 MHz and the integral and differential linearity errors are less than 0.5 LSB. The maximum glitch energy is 50 pS-V. The DAC has been developed in a 1-μm digital/analog CMOS technology. The entire circuit dissipates 150 mW at a 130-MHz conversion rate while operating from a single 5-V power supply     

A 12-b, 150 MHz Sample/s CMOS Current Steering D/A Converter with Gradient Error Compensation

This paper discusses a circuit of 12-b, 150 MHz Sample/s current steering DAC with hierarchical symmetrical switching sequences which will compensate gradient error. The circuit of 12-b DAC employs segmented architecture, the least significant bits (LSB's) steer a binary weighted array, while the most significant bits (MSB's) are thermometer decoded and steer a unary array. The measured differential nonlinearity and integral nonlinearity are ± 0.6 least significant bit (LSB) and ±0.9 LSB, respectively. The output spectrum of the DAC is −63 dB with an input frequency of 30 MHz at 150 MHz conversion rate. The circuit is fabricated in 0.5 μ μm, two-poly two-metal, 5.0 V, mixed-signal CMOS process and occupies 1.27 × 0.96 mm, when operating at 150 MHz Sample/s, it dissipates 91.6 mW from 5.0 V power supply which is much lower than those of [1]. Jinguang Jiang received the M.Sc. degree from Hunan University, Hunan, China, in 1998 and the PhD degree from Hunan University, Hunan, China, in 2003, all in Electrical Engineering. He is currently a Postdoctoral fellow of Control Science and Engineering in the Faculty of Electrical and Information Engineering at the University of Hunan. His interests are mode distinguish and intelligent system, intelligent signal process, low-power and low-voltage analog integrated circuits design. Bo Wang received the M.Sc. degree from Southeast University, China, in 1998. He is currently as a senior analog design engineer working at Caretta Integrated Circuits, Shanghai, China. His interests are high-speed analog IC design and analog system modeling and analysis. Yaonan Wang received the M.Sc. degree from Hunan University, Hunan, China, in 1991 and the Ph.D. degree from Hunan University, Hunan, China, in 1994, all in Control Theory and Control Engineering. He is currently a Professor and dean of school of Electrical and Information Engineering at the University of Hunan. He is engaged in research of intelligent control, intelligent signal process, image distinguish and its application.     

A new pipelined analog-to-digital converter using current conveyors

A new pipelined analog-to-digital converter (ADC) using second-generation current conveyor (CCII) is presented. Two main building blocks of the pipelined ADC, sample-and-hold (S/H) circuit and multiplying digital-to-analog converter (MDAC) are constructed of CCII instead of operational amplifier (OA). Experimental results show that the proposed CCII-based pipelined ADC can work at 12.5 MHz with a 7.3-bit resolution. The DNL is within −0.4 LSB and 0.4 LSB and INL is within −0.8 LSB and 0.8 LSB, respectively. The pipelined ADC is realized in TSMC 0.35 μm CMOS technology and consumes 29 mW under a 3.3 V power supply. The core size is 0.85×0.85 mm². Sing-Yen Wu received the M.S. degree in the Department of Electronic Engineering from National Taipei University of Technology, Taipei, Taiwan, in 2005. His current research interests include CMOS pipelined analog-to-digital converters and mixed-signal integrated circuit. Lu-Po Liao received the M.S. degree in the Department of Electronic Engineering from National Taipei University of Technology, Taipei, Taiwan, in 2003. His current research interests include analog integrated circuit design and mixed-signal integrated circuit design. Chia-Chun Tsai received the Ph.D. degrees in Electrical Engineering from National Taiwan University, Taipei, Taiwan, 1991. From 1989 to 2005, he served at the Department of Electronic Engineering, National Taipei University of Technology, Taipei, Taiwan. Since 2005 he has been with the Department of Computer Science and Information Engineering, Nanhua University, Chiayi, Taiwan, where he is a Full Professor. His current research interests include VLSI design automation and mixed-signal IC designs.     

An 80-MHz 8-bit CMOS D/A converter

A high-speed 8-bit D/A converter has been fabricated in a 2-/spl mu/m CMOS technology. In order to achieve high accuracy, a current-cell matrix configuration and a switching sequence called symmetrical switching have been used. The mismatch problem of small-size transistors has been relaxed by this matrix configuration. The linearity error caused by an undesirable current distribution of the current sources has been reduced by symmetrical switching. A high-speed decoding circuit and a fast-setting current source have been developed. The experimental results show that the maximum conversion rate is 80 MHz, a typical DC integral linearity error is 0.38 LSB, a typical DC differential linearity error is 0.22 LSB, and the maximum power consumption is 145 mW. The chip size is 1.85 mm/spl times/2.05 mm.     

A systematic design approach for low-power 10-bit 100 MS/s pipelined ADC

A systematic design approach for low-power 10-bit, 100 MS/s pipelined analog-to-digital converter (ADC) is presented. At architectural level various per-stage-resolution are analyzed and most suitable architecture is selected for designing 10-bit, 100 MS/s pipeline ADC. At Circuit level a modified wide-bandwidth and high-gain two-stage operational transconductance amplifier (OTA) proposed in this work is used in track-and-hold amplifier (THA) and multiplying digital-to-analog converter (MDAC) sections, to reduce power consumption and thermal noise contribution by the ADC. The signal swing of the analog functional blocks (THA and MDAC sections) is allowed to exceed the supply voltage (1.8 V), which further increases the dynamic range of the circuit. Charge-sharing comparator is proposed in this work, which reduces the dynamic power dissipation and kickback noise of the comparator circuit. The bootstrap technique and bottom plate sampling technique is employed in THA and MDAC sections to reduce the nonlinearity error associated with the input signal resulting in a signal-to-noise-distortion ratio of 58.72/57.57 dB at 2 MHz/Nyquist frequency, respectively. The maximum differential nonlinearity (DNL) is +0.6167/−0.3151 LSB and the maximum integral nonlinearity (INL) is +0.4271/−0.4712 LSB. The dynamic range of the ADC is 58.72 dB for full-scale input signal at 2 MHz input frequency. The ADC consumes 52.6 mW at 100 MS/s sampling rate. The circuit is implemented using UMC-180 nm digital CMOS technology.     

A 4-GS/s 4-bit Flash ADC in 0.18- μm CMOS

A 4-bit noninterleaved flash ADC implemented in 0.18-mum digital CMOS achieves a sampling rate of 4 GS/s. A 32 mum by 32 mum, on-chip differential inductor in each comparator extends the sampling rate without an increase in power consumption. A combination of DAC trimming and comparator redundancy reduces the measured DNL and INL to less than 0.15 LSB and 0.24 LSB, respectively. The measured ENOB with a 100 MHz full-power input is 3.84 bits and 3.48 bits, at 3 GS/s and 4GS/s, respectively. The ADC achieves a bit error rate of less than 10^-11 at 4 GS/s.     

A 500-MSample/s, 6-bit Nyquist-rate ADC for disk-drive read-channelapplications

The analog-to-digital conversion required in most disk-drive read-channel applications is designed for good dynamic and noise performance over a wide-input frequency range. This paper presents a 500-MSample/s, 6-bit analog to-digital converter (ADC) and its embedded implementation inside a disk-drive read channel, using a 0.35-μm CMOS double-poly (only one poly layer was used in the ADC), triple-metal process. The converter achieves better than 5 effective number of bits (ENOB) for input frequencies up to Nyquist frequency (f_in=f _s/2) and sampling frequencies f_s up to 400 MHz. It also achieves better that 5.6 ENOB for input frequencies up to f_s /4 over process, temperature, and power-supply variations. At maximum speed (f_s=500 MHz), the converter still achieves better than 5 ENOB for input frequencies up to f_in=200 MHz. Low-frequency performance is characterized by DNL<0.32 LSB and INL<0.2 LSB. The converter consumes 225 mW from a 3.3-V supply when running at 300 MHz and occupies 0.8 mm² of chip area     

A low-Voltage 10-bit CMOS DAC in 0.01-mm/sup 2/ die area

A low-voltage 10-bit digital-to-analog converter (DAC) for static/dc operation is fabricated in a standard 0.18-/spl mu/m CMOS process. The DAC is optimized for large integrated circuit systems where possibly dozens of such DAC would be employed for the purpose of digitally controlled analog circuit calibration. The DAC occupies 110 /spl mu/m/spl times/94 /spl mu/m die area. A segmented R-2R architecture is used for the DAC core in order to maximize matching accuracy for a minimal use of die area. A pseudocommon centroid layout is introduced to overcome the layout restrictions of conventional common centroid techniques. A linear current mirror is proposed in order to achieve linear output current with reduced voltage headroom. The measured differential nonlinearity by integral nonlinearity (DNL/INL) is better than 0.7/0.75 LSB and 0.8/2 LSB for 1.8-V and 1.4-V power supplies, respectively. The DAC remains monotonic (|DNL|<1 LSB) as INL reaches 4 LSB down to 1.3-V operation. The DAC consumes 2.2 mA of current at all supply voltage settings.