Ag_2Te掺杂对p型Bi_(0.5)Sb_(1.5)Te_3块状合金热电性能的影响

采用真空熔炼、机械球磨及放电等离子烧结技术(SPS)制备得到了(Ag2Te)x(Bi0.5Sb1.5Te3)1-x(x=0,0.025,0.05,0.1)系列样品,性能测试表明,Ag2Te的掺入可以显著改变材料的热电性能变化趋势,掺杂样品在温度为450~550K范围内具有较未掺杂样品更优的热电性能.适当量的Ag2Te掺入能够有效地提高材料的声子散射,降低材料的热导率.在测试温度范围内,(Ag2Te)0.05(Bi0.5Sb1.5Te3)0.95具有最低的晶格热导,室温至575K范围内保持在0.2~0.3W/(m·K)之间,在575K时,(Ag2Te)0.05(Bi0.5Sb1.5Te3)0.95试样具有最大热电优值ZT=0.84,相较于未掺杂样品提高了约20%.     

Ag-Bi-Sb-Te四元合金的热电性能

以Ag、Bi、Sb、Te为原料在1373K真空熔炼合成了AgxBi0.5Sb1.5-xTe3(x=0～0.5)合金.微观组织和结构分析显示,真空熔炼的合金具有层状组织特征,属R3m晶体结构,当x≥0.2时出现面心立方AgSbTe2相.电学性能测试表明,在300～580K温度范围内合金的电导率随温度升高而下降,掺Ag后合金的电导率明显提高,掺Ag量为x=0.1试样的最大值达到2.3×105S/m.材料的Seebeck系数均为正值,表明掺Ag合金为p型半导体.     

快速急冷法对β-Zn_(4+x)Sb_3材料热电及力学性能的影响

β-Zn4Sb3是一种重要的中温热电材料,但其较差的力学强度和可加工性限制了其实际应用.本文采用熔体旋甩法结合放电等离子烧结技术快速制备了一系列具有高热电性能和高力学强度的β-Zn4+xSb3块体材料.通过调节Zn的含量,优化了其热电性能,随着Zn含量的增加,电导率增大,Seebeck系数有所下降,热导率增加.在700K时,Zn4.32Sb3样品的ZT值达到1.13,相比熔融法制备的样品提高了约40%.该制备方法所得到的样品具有极高的抗压强度,与熔融法制备的样品相比较,所有样品的抗压强度均提高了一倍以上,这种高热电性能和高力学强度的β-Zn4+xSb3块体材料具有很好的应用前景.     

Te掺杂方钴矿CoSb3的溶剂热合成及电学性能

以CoCl2,SbCl3和Te粉为原料,NaBH4为还原剂,用溶剂热方法合成了Te掺杂方钴矿CoSb（3-x）Tex（x=0,0.05,0.1,0.2,0.4）纳米粉末.研究发现,Te含量较高的样品（x≥0.2）有明显的CoTe2等杂相存在.CoSb（3-x）Tex合成粉末的粒径大小在40nm左右,热压后晶粒发生长大,平均晶粒尺寸约为300nm.电学性能测试表明Te掺杂方钴矿CoSb（3-x）Tex的导电类型为n型,Seebeck系数的绝对值随着Te含量的增加而变小,电导率随着Te含量的增加而增大.在测试温度范围内,CoSb（2.8）Te（0.2）具有最高的功率因子,在773K温度下达到2.3×10^-3W·m^-1·K^-2.     

Te掺杂方钴矿CoSb3的溶剂热合成及电学性能

以CoCl₂, SbCl₃和Te粉为原料, NaBH₄为还原剂, 用溶剂热方法合成了Te掺杂方钴矿CoSb_3-xTe_x(x=0, 0.05, 0.1, 0.2, 0.4)纳米粉末. 研究发现, Te含量较高的样品(x≥0.2)有明显的CoTe₂等杂相存在. CoSb_3-xTe_x合成粉末的粒径大小在40nm左右, 热压后晶粒发生长大, 平均晶粒尺寸约为300nm. 电学性能测试表明Te掺杂方钴矿CoSb_3-xTe_x的导电类型为n型, Seebeck系数的绝对值随着Te含量的增加而变小, 电导率随着Te含量的增加而增大. 在测试温度范围内, CoSb_2.8Te_0.2 具有最高的功率因子, 在773K温度下达到2.3×10³W·m^-1·K^-2.     

NASICON型Na~+交换材料的制备、表征与性能研究

采用高温固相两步法制备了两种Li1.4M0.4Ti1.6(PO4)3(M=Al、Cr)系列NASICON功能材料,对不同掺杂合成的样品进行了XRD和SEM表征,并分别对其Na+的交换吸附容量进行了测定。结果表明,对LiTi2(PO4)3掺入适量的Al3+和Cr3+后未改变其晶体结构,合成的吸附剂粒径分布在5~10μm;Li1.4M0.4Ti1.6(PO4)3(M=Al、Cr)对Na+有特效吸附作用,当pH=11.0时,Li1.4Al0.2Cr0.2Ti1.6(PO4)3的饱和交换吸附容量可达69.26mg/g。     

液态Sn3.0Ag0.5Cu钎料与Cu、Fe及Co基板界面反应研究

研究了在固定温度380℃和不同钎焊时间条件下,液态Sn3.0Ag0.5Cu钎料与Cu、Fe、Co等3种金属基板的界面反应及其界面化合物(IMC)。研究结果表明,随着钎焊时间的增加,三者界面金属间化合物的平均厚度逐渐增加。Sn3.0Ag0.5Cu/Cu界面IMC主要由Cu_6Sn_5和Cu_3Sn组成,经过长时间钎焊后界面化合物大部分是Cu_3Sn。Sn3.0Ag0.5Cu/Fe界面化合物成分是FeSn2,相比另外两种界面,IMC在钎焊过程中生长最慢,形成的厚度最小。Sn3.0Ag0.5Cu/Co界面在短时间钎焊时(1min)会出现分层现象,认为是少量CoSn2和Sn原子在靠近钎料一侧反应生成CoSn3,靠近基板一侧生成CoSn2。长时间钎焊后观察到界面化合物只有CoSn3。通过对数据拟合可得到Sn3.0Ag0.5Cu/Cu、Fe、Co 3种液固反应界面的IMC层的生长率常数分别为9.55×10-6t 0.34,1.51×10~(-6)t~(0.18),0.85×10~(-6)t~(0.45)。比较3种基板,液态Sn基钎料与Cu基板的界面反应速率最快,IMC平均厚度也更厚。     

硅铬共掺杂尖晶石长余辉材料Zn1+xGa2-2xSixO4:Cr3+中近红外余辉的增强及陷阱分布分析

本论文基于硅铬共掺杂, 合成得到了一种尖晶石长余辉材料Zn_1+xGa_2-2xSi_xO₄:Cr ³⁺。实验采用高温固相法, 按照设计的化学计量比精确称量ZnO、Ga₂O₃、SiO₂和Cr₂O₃等原料, 制备了一系列硅铬共掺杂的镓酸锌尖晶石长余辉材料, 其化学式为Zn_1+xGa_2-2xSi_xO₄:Cr ³⁺(x=0, 0.1, 0.15, 0.2, 0.5, 1)。实验结果表明: 采用硅铬共掺杂方式后, 引入合适浓度的硅离子可有效改善余辉性能。当x=0.2时, 样品余辉强度最佳, 相比ZnGa₂O₄:Cr ³⁺增强了3倍, 并且余辉持续时间长达24 h。进一步的陷阱分布分析表明, 在ZnGa₂O₄基质基础上引入硅掺杂, 可有效调控不同陷阱深度的分布。即在丰富的反位缺陷基础上, 硅的共掺杂可增加不等价替换缺陷和填隙缺陷等, 并可调控禁带宽度及缺陷形成, 从而实现改善余辉性能的目的。     

水热法合成纳米ZnWO4/Ag及其光催化性能研究

以Na2WO4·2H2O和Zn(NO3)2·6H2O为原料,采用水热法制备了掺Ag+的ZnWO4催化剂.利用XRD、TEM和UV-vis吸收光谱对该催化剂进行表征;以曙红B为目标降解物,研究了ZnWO4/Ag催化剂的光催化性能.结果表明,一定量Ag+的掺入使复合光催化剂活性明显优于单一的ZnWO4,Ag+的掺入量为0.5%(原子分数)样品光催化效果最佳,1h内对5mg/L曙红B溶液的脱色率达到93%,是改性前的1.26倍.     

Li2BaSiO4∶Tb3+荧光粉的制备及发光特性

采用高温固相法合成了Tb3+激活的硅酸盐基质的系列发光材料Li2BaSiO4∶xTb3+,并研究了其在紫外光激发下的发光特性.研究结果表明,样品Li2BaSiO4∶xTb3+的激发光谱最强吸收源于Tb3+的4f7→5d1跃迁宽带吸收,最强吸收峰值位于268 nm左右.在紫外光激发下该系列材料均呈现Tb3+的特征绿光发射(542nm),最佳掺杂浓度为x=0.11.样品Li2BaSiO4∶0.11Tb3+的荧光衰减曲线呈单指数衰减特征,拟合所得的寿命值为5.0ms左右.     

Mechanochemical fabrication of C (matrix) + Cu + Si + W + Mo nanocomposites

Using magnesiothermic reduction of WO₃, MoO₃, SiO₂, and CuO through mechanochemical activation, we prepared high-purity (∼99.3%) nanopowders with a particle size from 9 to 350 nm for the fabrication of functional materials and nanocomposite systems for anode electrodes of lithium ion (polymeric) batteries.     

新西兰JAG CREATIVE:品牌、营销与推广

为这个真实世界进行品牌与平面设计创作就是新西兰Jag Creative品牌设计公司的热情。作为一个岛国,新西兰的企业在创新与创造性方面有着令人惊叹的杰出表现。     

高密度发光材料γ-Bi2WO6:Pr3+的发光性质研究

研究了用固相法制备的高密度发光材料γ-Bi2WO6Pr3+的结构、光致发光光谱、激发谱和γ-Bi2WO6的漫反射谱.由实验测得它的晶格参数为a=5.45A,b=16.42A,c=5.43A,密度Dx=9.53g/cm3.它的光致发光光谱主发射峰位于600、608、611、629nm,分别来自于pr3+的1D2→3H4、3P0→3H5、3P0→3H6、3P0→3F2跃迁的发射.其激发谱由位于约225～430nm范围内、最大值约在372nm的主激发带和450nm的激发峰组成;主激发带来自于基质,可能是基质的带间吸收、W-O间电荷迁移吸收和缺陷能级的吸收;450nm的激发峰来自于pr3+的3H4→3P2跃迁吸收.BWOPr3+的最佳掺杂浓度为0.8mol%左右.     

Electrical characterization of Si+ and Si+/P+ implanted N+P+In0.53Ga0.47As junctions

In this communication, we present I–V and admittance spectroscopy measurements of shallow n⁺p junctions into p-InGaAs made by Si⁺ implantation, including a complete study of the conduction mechanisms as a function of temperature. The effect of P⁺ co-implantation is also analysed. The I–V characteristics of both junctions show that recombination in the space-charge zone is the dominant transport mechanism in forward bias, with ideality factors around 1.5 at 300 K that increase with decreasing temperature of measurement. Activation energies of the reverse saturation current are obtained at room temperature, being 0.5 eV and 0.4 eV for Si⁺ and Si⁺P⁺ implanted diodes, respectively, indicating that recombination currents occur through a near midgap center. Reverse current–voltage measurements show a higher conduction in the P⁺ co-implanted junction due to a higher concentration of traps. In both types of junctions, the reverse characteristics can be fitted to a thermally-activated trap-assisted tunneling mechanism at low bias, involving traps at 0.41 eV and 0.44 eV for Si⁺ and P⁺ co-implanted junctions, respectively, whereas different trap-assisted tunneling processes dominate at medium and high bias. The small signal analysis show a clear difference between the two types of junctions. The use of Kramers–Kronig transforms on the admittance spectroscopy data reveals the presence of a defect level at 0.35 eV in both types of junctions, probably assigned to Zn, the native acceptor present in the p-InGaAs. Another trap level at 0.30 eV is detected at the P⁺ co-implanted junctions, not appearing in the Si doped junctions, which could probably be due to damage produced by the co-implantation.     

(Sr2+,Bi3+,Si4+,Ta5+)掺杂的TiO2压敏陶瓷中Ta5+的研究

研究Ta2 O5对 (Sr,Bi,Si,Ta)掺杂的TiO2 基压敏陶瓷压敏特性及电容特性的影响 ,发现按配方TiO2 0 .3%(SrCO3 Bi2 O3 SiO2 ) 0 .1 %Ta2 O5配制的样品具有最低压敏电压 (E1 0mA =1 .2V·mm- 1 )、最大相对介电常数 (εra=2 .0 0 2× 1 0 5)及较小非线性系数 (α =2 .6 )。考虑到材料的低压敏电压和大介电常数的要求 ,Ta2 O5最佳掺杂量在 0 .0 85mol%与 0 .1mol%之间。     

（Sr^2＋，Bia^3＋，Si^4＋，Ta^5＋）掺杂的TiO2压敏陶瓷中Ta^5＋的研究

研究Ta2O5对(Sr,Bi,Si,Ta)掺杂的TiO2基压敏陶瓷压敏特性及电容特性的影响,发现按配方TiO2+0.3%(SrCO3+Bi2O3+SiO2)+0.1%Ta2O5配制的样品具有最低压敏电压(E10mA=1.2V·mm-1)、最大相对介电常数(εra=2.002×105)及较小非线性系数(a=2.6).考虑到材料的低压敏电压和大介电常数的要求,Ta2 O5最佳掺杂量在0.085mol%与0.1mol%之间.     

Measurement of solubility and density of water + lithium bromide + lithium chloride and water + lithium bromide + sodium formate systems

Solubility of aqueous solutions containing lithium bromide + lithium chloride and lithium bromide + sodium formate were measured (LiBr/NaHCO₂ = 2 and LiBr/LiCl = 2 by mass ratio) at different temperatures. Visual polythermal method was used in the temperature range of (283.15–340.15) K and mass fraction range of (0.4–0.8). Also density of mentioned systems was reported in the temperature range of (288.15–333.15) K. Each set of experimental measurements were correlated using least-square regression as a function of temperature. Our results indicate that solubility of LiBr + LiCl is higher than LiBr and its density is lower than density of aqueous solution of LiBr.     

Phase Composition of the Products of Fe Oxidation in Fe + C + NaCl + H2O + O2 Exothermic Mixtures

Using thermodynamic analysis of the Fe–C–NaCl–H₂O–O₂ system and experimental studies (x-ray diffraction and Mössbauer spectroscopy) of exothermic mixtures containing Fe metal, activated carbon, water, and NaCl, we identified the state of Fe and determined the phase composition of the reaction products at different stages of oxidation with atmospheric oxygen. The calculation and experimental results are in reasonable agreement. Under the conditions of restricted access for air, the main oxidation product is magnetite, Fe₃O₄. Free access for air leads to the formation of hydrous ferric oxide, Fe₂O₃ · nH₂O. The most stable phase under the conditions of interest is goethite, Fe₂O₃ · H₂O (-FeOOH). Storage of incompletely oxidized samples away from air for 7–14 days leads to partial reduction of iron(III) oxide phases to Fe₃O₄ and -Fe.     

Solubilities, Vapor Pressures, and Heat Capacities of the Water + Lithium Bromide + Lithium Nitrate + Lithium Iodide + Lithium Chloride System

The optimum mole ratio of lithium salts in the H₂O + LiBr + LiNO₃ + LiI + LiCl system was experimentally determined to be LiBr : LiNO₃ : LiI : LiCl = 5 : 1 : 1 : 2. The solubilities were measured at temperatures from 252.02 to 336.75 K. Regression equations on the solubility data were obtained with a least-squares method. Average absolute deviations of the calculated values from the experimental data were 0.15% at temperatures <285.18 K and 0.05% at temperatures 285.18 K. The vapor pressures were measured at concentrations ranging from 50.0 to 70.0 mass% and at temperatures from 330.13 to 434.88 K. The experimental data were correlated with an Antoine-type equation, and the average absolute deviation of the calculated values from the experimental data was 2.25%. The heat capacities were measured at concentrations from 50.0 to 65.0 mass% and temperatures from 298.15 to 328.15 K. The average absolute deviation of the values calculated by the regression equation from the experimental data was 0.24%.     

Ionic conductivity of potassium antimonate tungstates with partial Na+ or Li+ substitution for K+

We have studied the formation of monovalent metal antimonate tungstates by solid-state reactions in the xM₂CO₃ · (y ? x)K₂CO₃ · ySb₂O₃ · 2(2 ? y)WO₃ (M = Na, Li; 0 ≤ x ≤ y; 1.0 ≤ y ≤ 2.0) systems and identified the stability regions of pyrochlore phases at a temperature of 1123 K in the KSbO₃-WO₃-MSbO₃ (M = Na, Li) composition triangles. A model has been proposed for the ion distribution over the sites of the pyrochlore structure (sp. gr. Fd3m). The conductivity of the monovalent metal antimonate tungstates has been measured in the temperature range 500–1000 K, and a relationship between their ionic conductivity and structure has been established.