不同采样体制对点目标的定量检测性能影响

围绕单采样和过采样扫描探测体制下的点目标定量检测性能,基于亚像元的采样模型,建立了一定分辨率条件下探测不同高度、尺寸目标的成像链路仿真模型,从目标信号采集能力、背景及杂波水平影响、检测能力和测量特性四个方面对比分析了相同瞬时视场的单采样、过采样以及两倍瞬时视场的过采样三种规格采样体制的目标检测性能.分析结果表明:相同瞬时视场的过采样比单采样更有利于目标信号的采集,检测能力更强,两倍瞬时视场的过采样对目标信号有抑制作用,不利于低信杂比情况下的目标探测;两种规格的过采样对背景信号及杂波均有抑制作用;两种规格的过采样对目标辐射强度都有明显的过采集误差,必须进行修正.     

过采样扫描探测性能对比分析

分析了单采样和过采样两种扫描探测体制的成像原理,并建立了扫描图像仿真模型.在不同云层杂波场景下从目标能量收集、背景杂波抑制和弱小目标检测三个方面对单采样和过采样扫描图像进行了对比分析.理论分析和仿真结果表明:过采样扫描探测体制更有利于收集目标能量,杂波抑制能力较优,对弱小目标的探测能力更强.     

过采样扫描探测性能对比分析

分析了单采样和过采样两种扫描探测体制的成像原理,并建立了扫描图像仿真模型。在不同云层杂波场景下从目标能量收集、背景杂波抑制和弱小目标检测三个方面对单采样和过采样扫描图像进行了对比分析。理论分析和仿真结果表明：过采样扫描探测体制更有利于收集目标能量,杂波抑制能力较优,对弱小目标的探测能力更强。     

常规采样与过采样点目标检测性能比较分析

对于红外扫描有效载荷等光电探测系统,瞬时视场的减小(提高分辨率)对抑制背景杂波、提高检测概率和降低虚警率具有重要意义。过采样技术一直是提高仪器成像分辨率时的研究热点。针对点目标探测系统,对常规采样和过采样两种采样体制进行了对比分析。结果表明,在响应的标准差、平均响应和超出率方面,过采样系统具有明显优势。     

基于时－空过采样系统的点目标检测性能分析

为了提高扫描成像系统对于点目标的探测性能,提出了时-空过采样点目标探测体制,并对其进行了目标检测性能分析。首先,分析了单采样体制在点目标探测中易存在跨像元导致的目标能量分散问题,以及探测器随机高强度噪声及空间质子流尖峰信号导致的虚警问题;然后,提出了用于点目标扫描探测的时-空过采样体制。最后,基于图像信噪比对相同光学系统下单采样和时-空过采样系统的目标检测性能进行了比较分析。分析结果表明,通过过采样方式能够实现目标能量集中到一个像元,保证了图像信噪比需求。通过高分辨率融合使得目标尺度大于噪声及尖峰的尺度,目标尺度最大扩展至3?3像元,基于目标空间相关的处理可以有效降低虚警,提升系统检测性能。     

基于时－空过采样系统的点目标检测性能分析

为了提高扫描成像系统对于点目标的探测性能,提出了时-空过采样点目标探测体制,并对其进行了目标检测性能分析.首先,分析了单采样体制在点目标探测中易存在跨像元导致的目标能量分散问题,以及探测器随机高强度噪声及空间质子流尖峰信号导致的虚警问题;然后,提出了用于点目标扫描探测的时-空过采样体制.最后,基于图像信噪比对相同光学系统下单采样和时-空过采样系统的目标检测性能进行了比较分析.分析结果表明,通过采样方式能够实现目标能量集中到一个像元,保证了图像信噪比需求.通过高分辨率融合使得目标尺度大干噪声及尖峰的尺度,目标尺度最大扩展至3×3像元,基于目标空间相关的处理可以有效降低了虚警,提升系统检测性能.     

动目标检测雷达相参体制分析

动目标检测雷达采用锁相相参或全相参两种体制信号。两种体制的动目标检测雷达消除地杂波的能力不一样，设计难易程度差别很大，雷达对分系统信号质量的要求以及两种体制分系统能达到的技术指标也不相同。     

采样定时偏差对无源雷达性能影响研究

外辐射源雷达利用第三方信号作为照射源来探测目标,参考通道中的信号重构和监测通道中的杂波抑制是外辐射源雷达信号处理流程中的关键部分。主要讨论了OFDM波形照射源信号,并从理论上分析了采样定时偏差在参考信号重构、时域杂波抑制和匹配接收性能的影响。理论分析和仿真表明,采样定时偏差的存在会减少重构后的参考信号和监测信号的相关性,降低时域杂波抑制性能以及匹配接收的目标信噪比。基于WiFi信号帧结构的特点,提出了一种对采样定时偏差估计和补偿的方法,并在实测数据中验证了该方法的有效性。     

背景杂波对红外成像系统性能的影响

结合红外成像系统的组成结构以及红外辐射信号的传递过程,给出了杂波的定义,即杂波是场景中包含的与目标信号相似的信号,同时分析了杂波的特征依赖性和相对性.基于杂波仅通过信号处理算法对目标信号产生影响的认识,给出了杂波影响下的系统探测性能模型,并与不考虑杂波时的系统探测性能模型进行对比,指出背景杂波导致的目标检测难度远远大于不考虑杂波的情况.系统的探测性能是目标、背景间均值、方差差异的复杂函数.     

基于深度卷积神经网络的红外过采样扫描图像点目标检测方法

针对红外过采样扫描成像特点,提出一种基于深度卷积神经网络的红外点目标检测方法.首先,设计回归型深度卷积神经网络以抑制扫描图像杂波背景,该网络不含池化层,输出的背景抑制图像尺寸与输入图像一致;其次,对抑制后的图像进行门限检测,提取候选目标小区域原始数据;最后,将候选目标区域数据依次输入分类型深度卷积神经网络以进一步判别目标、剔除虚警.生成大量过采样训练数据有效训练两个深度网络.结果表明,在不同杂波背景下,该方法在目标信杂比增益、检测概率、虚警概率和运算时间等方面,均优于典型红外小目标检测方法,适用于红外过采样扫描系统的点目标检测.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.