无线局域网接收机用频率综合器的关键技术

对无线局域网接收机用锁相环型频率综合器的几项关键技术进行了研究.首先分析了锁相环型频率综合器的结构并提出了系统的主要参数.采用TSMC 0.18μm射频CMOS工艺设计了一个具有低相位噪声的单片LC调谐型压控振荡器.其在4.189GHz频点上4MHz频偏处所测得的相位噪声为-117dBc/Hz.采用TSMC 0.18μm混合信号CMOS工艺实现了具有低功耗的下变频模块电路.该电路在1.8V电源供电下可正常工作,功耗为13mW.     

2.4GHz频率综合器中低杂散锁相环的设计

在带电荷泵的锁相环频率综合器中,设计低杂散锁相环的关键是减少鉴频鉴相器和电荷泵的非理想特性以及提高压控振荡器的性能.采用TSMC 0.18 μm CMOS工艺,设计了一种改进型锁相环电路.仿真结果显示,在1.8V基准电压供电时,电荷泵电流在0.3～1.6V电压范围内匹配度小于1μA,电流失配率小于0.2％,压控振荡器在中心频率2.4 GHz频偏1 MHz时的相位噪声为-124.3 dBc/Hz@1 MHz,环路参考杂散降为-60 dBm.     

应用于5 GHz无线局域网的频率合成器设计

讨论了应用于5 GHz无线局域网(WLAN)射频收发机的频率合成器的设计.该设计以一个4阶II型电荷泵锁相环为基础,采用整数分频的频率合成方式.环路的参数首先通过系统级的建模和仿真确定,各电路模块使用TSMC 0.18 μm CMOS工艺设计.整个频率合成器已通过电路级仿真并交付流片.     

集成低功耗CMOS压控振荡器及其二分频器

实现了应用于无线局域网收发机的集成低功耗CMOS压控振荡器及其二分频器.压控振荡器是由在片对称螺旋型电感和差分容抗管组成的LC负阻型振荡器,而二分频器采用了ILFD结构.由于采用了差分LC元件和ILFD技术,整个电路的功耗很低.该电路已经用0.18μm CMOS工艺实现.测试结果表明该电路能产生低相位噪声的3.6/1.8GHz双带本振信号,并具有很宽的可控频率范围.当电源电压为1.5V时,该电路消耗了5mA的电流.芯片面积为1.0mm×1.0mm.     

集成低功耗CMOS压控振荡器及其二分频器

实现了应用于无线局域网收发机的集成低功耗CMOS压控振荡器及其二分频器.压控振荡器是由在片对称螺旋型电感和差分容抗管组成的LC负阻型振荡器,而二分频器采用了ILFD结构.由于采用了差分LC元件和ILFD技术,整个电路的功耗很低.该电路已经用0.18μm CMOS工艺实现.测试结果表明该电路能产生低相位噪声的3.6/1.8GHz双带本振信号,并具有很宽的可控频率范围.当电源电压为1.5V时,该电路消耗了5mA的电流.芯片面积为1.0mm×1.0mm.     

一种2.4-GHz全集成双环路频率综合器的设计

根据不同锁相环频率综合器架构各自的优缺点,选择了双环路锁相环结构以获得低相位噪声和快速锁定时间。采用0.18μm CMOS工艺设计了一款2.4 GHz全集成双环路锁相环频率综合器,由主锁相环和参考锁相环环路构成。采用MATLAB和SpectreRF对锁相环系统的相位噪声、锁定时间进行了仿真,得到主锁相环输出频率为在2.4 GHz时,相位噪声为-120 dBc/Hz@1 MHz,功耗为10 mW,电源电压为1.8 V。频率范围为2.4 GHz至2.5 GHz,RMS相位误差为1°,锁定时间为5μs。     

单片UHF RFID阅读器中低噪声频率综合器的设计

结合EPC global C1 G2协议和ETSI规范要求,讨论了频率综合器噪声性能需求,并设计实现了用于单片CMOS UHF RFID阅读器中的低噪声三阶电荷泵锁相环频率综合器.在关键模块LC VCO的设计中,采用对称LC滤波器和LDO 调节器提高VCO相位噪声性能.电路采用IBM 0.18 μm CMOS RF工艺实现,测得频率综合器在中心频率频偏200 kHz和1 MHz处相位噪声分别为-109.13 dBc/Hz和-127.02 dBc/Hz.     

一种900MHz RFID读卡器中的高性能CMOS频率综合器

实现了一个应用于RFID系统的低功耗、低噪声的锁相环频率综合器.该频率综合器采用UMC 0.18μm CMOS工艺实现,输入时钟为13MHz,经测试验证输出频率为718～915MHz,相位噪声为-124dBc/1MHz,-101.13dBc/100kHz,频率分辨率为200kHz,功耗为54mW.     

一种900MHz RFID读卡器中的高性能CMOS频率综合器

实现了一个应用于RFID系统的低功耗、低噪声的锁相环频率综合器.该频率综合器采用UMC 0.18μm CMOS工艺实现,输入时钟为13MHz,经测试验证输出频率为718～915MHz,相位噪声为-124dBc/1MHz,-101.13dBc/100kHz,频率分辨率为200kHz,功耗为54mW.     

一种中心频率可调的VCO电路设计

采用0.18μm CMOS工艺设计了一种用于高速锁相环系统的压控振荡器(VCO)电路,该电路的中心频率可根据需要进行调节.电路采用SMIC 0.18 μm工艺模型,使用Cadence的Spectre工具进行了仿真,仿真结果表明,该电路可工作在2.125～3.125 GHz范围内,在5 MHz频偏处的相位噪声为-105 dBc/Hz.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.