An investigation on the influence of electromagnetic interference induced in conducting wire of universal LEDs

Electromagnetic Interference (EMI) has a detrimental effect upon the performance of Optical-Fiber Communication (OFC) systems. The present study considers the case where EMI is induced in a conducting wire (CW), and derives equations to establish the influence of the induced EMI on GaP and GaAsP Light-Emitting Diodes (LEDs). These equations are then verified experimentally. The results indicate that the degree of influence of the EMI upon both LED devices depends upon the interference power, the interference frequency, the induced power, the input resistance of the device, the inverse saturation current, and the ideal factor of the LED. Moreover, it is found that the induced interference current increases with an increasing interference frequency and that the EMI has a greater influence on devices with a lower input impedance. The theoretical results are found to be in good agreement with the experimental data.     

Reliable study of digital IC circuits with margin voltage among variable DC power supply, electromagnetic interference and conducting wire antenna

This paper measures the margin voltage of a digital IC circuit in order to assess the deterioration of the margin voltage caused by variations in the DC power supply, electromagnetic interference (EMI), and the corresponding power induced in a conducting wire antenna (CWA). The present results confirm that these factors may influence the margin voltage to such an extent that the operation of the digital IC circuit may fail. This paper provides a theoretical analysis of the influence of these factors upon the margin voltage, and develops corresponding equations, which are then applied with appropriate parameter values to determine an optimal circuit operation. It is shown that the deteriorated margin voltage of the IC circuit is a function of the amplitude and frequency of the EMI source, and of the parasitic capacitance of the device, i.e. the greater the EMI amplitude and frequency, and the higher the capacitance of the device, the greater the likelihood that its operation will fail when subjected to a variable DC supply voltage, or to EMI and CWA effects. Furthermore, in the case of EMI, it is shown that an increased interference frequency will reduce the margin voltage of the device. Finally, it is noted that the smaller the input impedance of the IC device, the greater the influence of EMI is likely to be.     

Numerical and experimental analysis of EMI effects on circuits with MESFET devices

This study develops theoretical formulae to model the time domain and frequency domain characteristics of the noise spectrum of a MESFET device induced by varying EMI conditions. The theoretical results are then compared with the experimental measurements. The experimental and numerical results reveal that the magnitude of the EMI-induced noise is related to the pulse height, the output load, the parasitic capacitance, the interference frequency and the interference amplitude. It is shown that a higher interference amplitude or frequency increases the harmonic noise. The theoretical method presented in this paper provides a convenient means of evaluating the EMI effects and signal-to-noise ratio (SNR) of MESFET and similar wavelength devices.     

Improvement of photon extraction efficiency of InGaN LEDs utilizing textured ZnO layer deposited by electrospray deposition

Improvement of photon extraction efficiency of InGaN LEDs has been achieved by deposition of textured ZnO layers on InGaN LED bare chips utilizing electrospray deposition. The electrical and spectral properties of the InGaN LED remain unchanged after the deposition of ZnO, while the InGaN LED with textured ZnO layer exhibits a wider far-field angular distribution. The optical power of the InGaN LED capped with ZnO layer is ∼30% higher than that without ZnO, which is due to increased photon escape probability as a result of the increased surface roughness.     

开关电源输入EMI滤波器设计与仿真

开关电源中常用EMI滤波器抑制共模干扰和差模干扰。三端电容器在抑制开关电源高频干扰方面有良好性能。文中在开关电源一般性能EMI滤波器电路结构基础上,给出了使用三端电容器抑制高频噪声的滤波器结构。并使用PSpice软件对插入损耗进行仿真,给出了仿真结果。     

Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs

We have investigated the effects of nonradiative recombination centers (NRCs) on the device performance of InGaN/GaN multi-quantum-well (MQW) light-emitting diodes (LEDs) inserting low-temperature n-GaN (LT-GaN) underlying layers. Inserting an LT-GaN underlying layer prior to growing the MQWs is a successful means of separating the induced nonradiative recombination centers because a growth interrupt interface exists between the n-GaN template and the InGaN QW. We found that by introducing this technique would improve the external quantum efficiency of the as-grown conventional LEDs. The electroluminescence relative intensity of a blue LED incorporating a 70-nm-thick LT-GaN was 20.6% higher (at 20 mA current injection) than that of the corresponding as-grown blue LED in the best case.     

Conducted EMI Reduction in Power Converters by Means of Periodic Switching Frequency Modulation

Spread spectrum clock generation techniques were originally developed to reduce electromagnetic interference (EMI) in communications and microprocessor systems working in the range of hundreds of megahertz. Nowadays, the switching frequency of power converters has been increasing up to values that make worthy the application of such switching frequency modulation techniques to reduce EMI emissions in power converters. Although random modulations have been applied before to power converters, periodic patterns can provide some advantages. First, theoretical principles of frequency modulation using three periodic patterns for the modulating function are presented. The influence of some important modulation parameters on the EMI reduction is analyzed and some considerations about the EMI filters design are also presented. The effectiveness of such methods in terms of EMI reduction is demonstrated theoretically and confirmed with experimental results obtained from tests carried out on two converters. The first one is a 2.5 W buck converter that can be switched up to 1 MHz and the second one is a 600 W boost converter switching at 40 kHz. In both cases, attenuations obtained in conducted EMI are evaluated. Finally, special attention has been paid to input current and output voltage ripple in order to evaluate possible undesired side-effects produced by this technique.     

Investigation of EMI-induced noise spectrum in an enhancement-type MOSFET

This paper models the time domain and frequency domain characteristics of the noise spectrum of a MOSFET device under varying EMI conditions. The theoretical results are compared with experimental measurements. Both sets of results reveal that the magnitude of the EMI-induced noise is governed by the pulse height, the output load, the parasitic capacitance, the interference frequency and the interference amplitude. Furthermore, it is shown that a higher interference amplitude or frequency increases the harmonic noise. The theoretical method presented in this paper provides a convenient means of evaluating the EMI effects and signal-to-noise ratio (SNR) of MOSFETs and similar wavelength devices.     

Reduction of power supply EMI emission by switching frequencymodulation

Electromagnetic interference (EMI) emission is always of grave concern for power electronic circuit designers. Due to rapid switching of high current and high voltage, interference is a serious problem in switching power circuits. Here, the effect of frequency modulation on power supply EMI noise is investigated. Significant reduction of emission is possible with the proposed scheme     

海洋平台大功率整流电源电磁兼容整改分析

海洋平台大功率整流电源满功率工作时出现了非正常停机现象,CE102传导发射及RE102辐射发射测试项目超标。综合分析发现,整流电源内部开关器件开关频率及其倍频的电磁干扰、柜体屏蔽性能欠佳是超标的主要原因。通过在整流电源的输入、输出端进行针对性的EMI滤波和屏蔽设计,有效解决了大功率整流电源的电磁兼容问题。     

380‐nm Ultraviolet Light‐Emitting Diodes with InGaN/AlGaN MQW Structure

In this paper, we demonstrate the capabilities of 380‐nm ultraviolet (UV) light‐emitting diodes (LEDs) using metal organic chemical vapor deposition. The epi‐structure of these LEDs consists of InGaN/AlGaN multiple quantum wells on a patterned sapphire substrate, and the devices are fabricated using a conventional LED process. The LEDs are packaged with a type of surface mount device with Al‐metal. A UV LED can emit light at 383.3 nm, and its maximum output power is 118.4 mW at 350 mA.     

Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes

A novel gain media based on staggered InGaN quantum wells (QWs) grown by metal-organic chemical vapor deposition was demonstrated as improved active region for visible light emitters. Fermi's golden rule indicates that InGaN QW with step-function like In content in the well leads to significantly improved radiative recombination rate and optical gain due to increased electron-hole wavefunction overlap, in comparison to that of conventional InGaN QW. Spontaneous emission spectra of both conventional and staggered InGaN QW were calculated based on energy dispersion and transition matrix element obtained by 6-band k middotp formalism for wurtzite semiconductor, taking into account valence-band-states mixing, strain effects, and polarization-induced electric fields. The calculated spectra for the staggered InGaN QW showed enhancement of radiative recombination rate, which is in good agreement with photoluminescence and cathodoluminescence measurements at emission wavelength regime of 425 and 500 nm. Experimental results of light-emitting diode (LED) structures utilizing staggered InGaN QW also show significant improvement in output power. Staggered InGaN QW allows polarization engineering leading to improved luminescence intensity and LED output power as a result of enhanced radiative recombination rate.     

An innovative EMI reduction design technique in power converters

The present paper deals with the problem of reducing electromagnetic interference (EMI) of switched-mode power converters using gate controlled devices such as IGBTs and power MOSFETs. In order to reduce power losses, these systems rely on fast on/off time pulses, thus producing emissions due to the high-frequency spectral content of pulses. An original design method for switched-mode power supplies is developed allowing to obtain an acceptable compromise between power losses and EMI. Emphasis is placed on the analysis of the commutation cell of the switching static converter in order to demonstrate that it is possible to control the emissions of the device by handling the parameters of the driver circuit. Theoretical analysis is discussed and compared with experimental results of the investigation on the spectrum amplitude of the emissions     

High-Power EMI on RF Amplifier and Digital Modulation Schemes

We present the performance of an RF amplifier and digital modulation techniques in the presence of high-power electromagnetic interference (EMI) to provide existing and next generation communication systems with critical information. An advanced measurement setup comprised of a large-signal network analyzer is used to characterize the adverse effects of EMI on the device characteristics of an RF power amplifier and the performance of digital modulation schemes. Furthermore, our analysis incorporated hybrid numerical tools, such as the hybrid S-parameter method to carry out an extensive EMI analysis of digital modulation schemes in the presence of complex structures, such as cylindrical cavities. Our studies yield critical information for the communication systems. For instance, our analysis suggests that digital modulation schemes are more susceptible to EMI than the RF power amplifier that processes the modulated signals. Power levels of the order of megawatts are required to have a notable impact on the device characteristics of an RF amplifier in the presence of a missile-like body, whereas, much lower power levels are sufficient to degrade the performance of a digital modulation scheme as long as it is within the bandwidth of the modulated signal. Our analysis further indicates that nonconstant envelope digital modulation schemes are more susceptible to EMI.      

LED显示屏驱动电流的潜在电磁干扰分析

为了控制对发光二极管(LED)显示屏亮度调制时电 源电流产生的电磁干扰(EMI),对3种脉冲宽度调制(PWM)调光方法下显示 屏的电源电流频谱进行了研究。首先比较了线性、离散和选通3种PWM的调光原理和潜在 EMI,设计了基于电流频谱分析的EMI评估法,并通过对单亮度和亮度均匀渐变图像 的仿真,验证了评 估法的有效性;最后通过对LED显示屏真实图像显示时的电流频谱分析,比较了3种调光方 法的潜在EMI。实验结果表明:线性PWM方式下,同时点亮LED会产生较大的EMI;离 散PWM对消耗电流的 延展和码制对消作用,可以有效地减小EMI;选通PWM随着选通等级的提高,最小点 亮脉冲变窄不利 于减小EMI。本文的分析结果可用于在LED显示屏产品设计时,合理进行EMI分析 与分配,预估产品的电磁兼容性。     

PFC full bridge rectifiers EMI modeling and analysis-common mode disturbance reduction

Switched mode power supplies must comply with electro-magnetic interference (EMI) regulations. Due to technological improvements, switching frequencies have been increased leading to reduced passive component values but also greater EMI levels, especially conducted common mode disturbances. This paper presents a simple and effective EMI forecast method to study and to analyze the conducted EMI effects before prototype testing. The methodology is validated and applied to the single phase full bridge power factor correction (PFC) rectifier. Several techniques to reduce common mode current (CMC) levels created by the converter are presented. The study is based on high frequency models and understanding of phenomenon. Looking at the control strategies and/or the propagation paths, it is demonstrated that EMI levels may be reduced. It is shown that with symmetrical EMI propagation paths, synchronized control strategies such as bipolar pulse width modulation (PWM) are preferred and lead to reduced CMC levels. On the other hand, with asymmetrical propagation paths, unipolar and half bridge control strategies may be preferred to reduce both differential mode current (DMC) and CMC levels. Results are validated using practical experiments performed under EMI regulation testing conditions.     

Field-Line-Circuit Coupling Based Method for Predicting Radiated Electromagnetic Emission of IGBT-PMSM Drive System

Electric drive system with Insulated gate bipolar transistor (IGBT) power device is widely used in Electric vehicle (EV), which consists of inverter, cables and Permanent magnet synchronous motor (PMSM). Due to the fast switching in di/dt and dv/dt of IGBT device, the system produces serious radiated Electromagnetic interference (EMI) through the interconnection cables. Thus, modeling of EMI source, propagation path and load PMSM is the key to accurately evaluate the system's radiation level. In addition, the system's radiated EMI involves the integrated calculation of circuit, cable and electromagnetic field, which cannot be solved by using a single circuit or electromagnetic calculation method. Therefore, this paper develops an effective field-linecircuit coupling based method to investigate the radiated EMI problems for IGBT-PMSM drive system, which is validated by experimental measurement. Besides, the impact of power cable parameters on radiated EMI is discussed. The proposed approach has guiding significance for electromagnetic compatibility design of EV.     

反激变换器箝位电路的设计

反激式变换器原边漏感引起的电压尖峰对功率器件和电路性能影响很大,本文基于抑制漏感尖峰影响的目的,考虑到次级反射电压也为箝位电路提供能量,同时箝位电容电压并非不变量,采用了一种改进的箝位电路的设计方法,推导出的表达式,结合反激变换器应力、效率和传导干扰实验,得出了随着箝位电阻值的增大,变换器的效率会提高、传导干扰会变差的结论.根据反激变换器对效率和EMI的侧重点不同,选取箝位电路参数可以满足反激变换器不同的设计要求.