AlGaN /GaN分布布拉格反射镜的MOCVD生长

文中利用MOCVD方法,采用高质量GaN作为缓冲层,在（0001）取向的蓝宝石衬底上实现了不同组分的AlxGa1-xN/GaN分布布拉格反射镜（DBR）的制备.通过XRD、SEM、AFM、反射谱等测量分析手段,研究了AlxGa1-xN/GaN DBR的结构质量、厚度和表面形貌.     

Mercury cadmium telluride/cadmium telluride distributed bragg reflectors for use with resonant cavity-enhanced detectors

A HgCdTe/CdTe system is investigated for use in distributed Bragg reflectors. The modeled performance is described and compared to an as-grown structure. As-grown 15-layer structures with arithmetically varying layer thickness are also annealed at 250°C and performance re-evaluated at 2 h, 7 h, and 24 h annealing times. There is some shifting of the absorption edge and some degradation in reflectivity, but the mirror is still functional.     

MOCVD生长高反射率AlN/GaN分布布拉格反射镜

利用金属有机物化学气相沉积(MOCVD)方法在蓝宝石c面衬底上制备出高反射率AlN/GaN分布布拉格反射镜(DBR).利用分光光度计测量,在418 nm附近最大反射率达到99%.样品表面显微照片显示,有圆弧形缺陷和少量裂纹出现;在缺陷和裂纹以外的区域,DBR具有较为平坦的表面,其粗糙度在10μm×10μm面积上为3.3 m左右.样品的截面扫描电镜(SEM)照片显示,DBR具有良好的周期性.对反射率和表面分析的结果表明,该样品达到了制备GaN基垂直腔面发射激光器(VCSEL)的要求.     

In situ growth monitoring of AlGaN/GaN distributed Bragg reflectors at 530 nm using a 633 nm laser

The metal-organic chemical vapor deposition(MOCVD) growth of AlGaN/GaN distributed Bragg reflectors (DBR) with a reflection peak at 530 nm was in situ monitored using 633 nm laser reflectometry.Evolutions of in situ reflected reflectivity for different kinds of AlGaN/GaN DBR were simulated by the classical transfer matrix method.Two DBR samples,which have the same parameters as the simulated structures,were grown by MOCVD.The simulated and experimental results show that it is possible to evaluate the DBR...     

嵌埋材料对分布式布拉格反射镜腔共振模式的影响

低维材料嵌入微腔已经广泛应用于纳米激光器和探测器等。为了实现增益材料和光学微腔之间的有效耦合,需要深入研究嵌埋材料对腔共振模式的影响。本文主要讨论了嵌埋材料的厚度、位置、腔层厚度以及分布式布拉格反射镜的对数对腔供着模式的影响。结果表明,腔共振模式随嵌埋材料位置的不同呈现周期性变化并且在λ/2光程周期内存在最大峰位移。最大峰位移随腔层厚度增加而减小,但与嵌埋材料的厚度成正比。分布式布拉格反射镜的对数不影响腔共振模式。这些结果为光学器件的设计和实验现象的分析提供了指导,并且可以应用于不同波长分布式布拉格反射腔结构。     

Long-wavelength GaAs/AlAs distributed Bragg reflectors for use inGaSb-based resonant cavity detectors

Two GaAs/AlAs Bragg reflector stacks were designed for operation at 1.68 μm and 2.2 μm to be used in resonant cavity photodetectors. The mirrors were grown by solid source MBE, and measured reflectivities were in excess of 95 and 85%, respectively     

用633nm的激光器监控峰值波长为 530nm的AlGaN/GaN DBR的生长

本文从理论和实验上研究了用633nm激光器干涉仪监控峰值反射波长为530nm的1/4光学厚度的AlGaN/GaN 分布布拉格反射器（DBR）的生长。首先采用传输矩阵法从理论上研究了不同周期厚度的AlGaN/GaN DBR的实时反射率随DBR生长厚度的变化。接着采用金属有机化合物气相外延法生长了两个与模拟结构相同的DBR样品。仿真结果和实验结果表明能够从DBR实时反射率随生长厚度变化的曲线形状判断DBR的结构参数。最后通过激光干涉仪实时监控生长了DBR发光二极管,光致发光实验证明DBR对发光二极管出射光的加强作用在期望波长范围内。     

Highly efficient and high transmittance semitransparent polymer solar cells with one-dimensional photonic crystals as distributed Bragg reflectors

We demonstrate that one-dimensional photonic crystals as distributed Bragg reflectors can effectively improve the performance of semitransparent polymer solar cells (PSCs) based on the blend of P3HT:ICBA. The one dimensional distributed Bragg reflectors (1D DBRs) are composed of N pairs of WO₃/LiF which are thermally evaporated on Ag anode. Due to its photonic bandgap, 1D DBRs can reflect the light totally back into the PSCs when the high reflectance range of 1D DBRs is well matched with absorption spectrum of the active layer. A maximum power conversion efficiency (PCE) of 4.12%, a highest transmittance of 80.4% at 660 nm and an average transmittance of 55.6% in the wavelength range of 600–800 nm are obtained in the case of N = 8, corresponding enhancement of 24.1% in PCE when compared with the device without the 1D DBRs.     

InGaN/GaN岛形量子阱样品透射电镜制样与表征方法

本文研究了氮化物半导体三维岛形结构的透射电镜制样技术,减小了样品在制样过程中的结构损伤,并对In Ga N/Ga N量子阱进行了结构、成分和发光特性的表征。通过对三维Ga N小岛非极性小面微观结构的分析,确定了侧壁小面皆为半极性面,说明小面生长的In Ga N/Ga N量子阱受到较小的极化效应影响。该岛形量子阱的结构特征,有效地增强了量子阱的发光效率,同时由于不同小面的存在,实现了同一小岛的多波长白光发射。     

Spin-orbit splitting dependent resonant third-order nonlinear optical susceptibility in InGaN/GaN multiple quantum wells

For the transition between valence band and conduction band, the third-order nonlinear optical susceptibility χ⁽³⁾ for degenerated four-wave mixing in In_xGa_1−xN/GaN multiple quantum wells (MQWs) has been calculated. The contributions of spin-orbit split-off energy to the resonant third-order nonlinear optical susceptibility of the modes, whose polarization is vertical to the [0 0 1] direction of the MQWs, are discussed in detail. The correlations between the peaks of χ⁽³⁾, which are due to the transitions from the spin-orbit split-off energy level to first conduction subband, and the width of the quantum well and the constituents of the semiconductor material are obtained.     

渐变In组分InGaN/GaN多量子阱结构中的相分凝及其对提高量子效率的作用研究

利用光荧光、阴极荧光以及时间分辨荧光光谱技术研究了具有不同In组分的渐变InGaN/GaN多量子阱结构中的相分凝现象。在10 K的荧光光谱中,所有的三个样品中除了主发光峰位外,在其高能及低能位置处还出现了另外两个发光峰,表现出了明显的相分凝现象。三个样品阴极荧光结果中呈现出了明显的强度对比,证明了相分凝现象随着量子阱中In组分的增加而加剧。在15 K的时间分辨荧光光谱中,随着In组分的增加,谱线的上升时间得到了延迟,这表明了载流子在由于相分凝而造成的低、高In组分结构中的输运。     

基于重叠写入啁啾光栅的Fabry-Perot腔的研究

以两段重叠写入的啁啾光栅作为反射面,构成光纤光栅Fabry-Perot(FP)腔.分别采用施加应力法和移动相位掩模板法,在同一段光纤中重叠写入啁啾光栅形成FP腔.使用啁啾量为1 nm的相位掩模板进行实验,两种方法曝光后的重叠啁啾光栅都可以形成明显梳状透射光谱.使用移动相位掩模板法,透射光谱的自由光谱范围(FSR)可达0...     

Efficiency droop in GaN LEDs at high current densities: Tunneling leakage currents and incomplete lateral carrier localization in InGaN/GaN quantum wells

The phenomenon of the emission efficiency droop of InGaN/GaN quantum wells (QWs) in light-emitting diode p-n structures is studied. The influence exerted by two basic processes on the emission efficiency is considered: tunnel injection into a QW and incomplete lateral carrier localization in compositional fluctuations of the band-gap width in InGaN. The sharp efficiency peak at low currents and the rapid efficiency droop with increasing current are due to tunneling leakage currents along extended defects, which appear as a result of a local increase in the electron hopping conductivity via the depletion n region and a corresponding local decrease in the height of the injection p barrier. A less sharp efficiency peak and a weak, nearly linear, decrease in efficiency with increasing current are caused by incomplete lateral carrier localization in the QW due to slowing-down of the carrier energy-relaxation rate and to the nonradiative recombination of mobile carriers.     

氮空位在纳米GaN颗粒和InGaN/AlGaN双异质结中的聚集

直流放电等离子法制备纳米GaN颗粒中的氮缺乏可导致空位形成。在电子显微观察的电子辐照条件下，这些N-空位将进一步凝聚，形成一个a=2.209nm,b=3.826nm,c=1.037nm,α＝β＝γ＝90℃ 的调制结构。随着电子辐照剂量增加，纳米颗粒中心将出现空洞，同时使该区的金属镓离子迁移到颗粒的表面。电子显微分析及分子力学理论计算表明，这种新的调制结构系空位的有序排列所致。在此基础上，进一步研究了InGaN/AlGaN的双异质结薄膜结构中直径约为50nm的空洞存在与发光失效的关系，讨论了N－空位的聚集与空形成的关系。     

Tunneling current and electroluminescence in InGaN: Zn,Si/AlGaN/GaN blue light emitting diodes

We investigate electrical and optical characteristics of Nichia NLPB-500 double-heterostructure blue light-emitting diodes (LEDs), measured over a wide temperature range from 10 to 300K. Current-voltage characteristics have complex character and suggest involvement of at least two different tunneling mechanisms. The peak energy of the optical emission follows the applied bias for voltages between 2.3–2.6 V and can be tuned in large spectral range from 2.3 up to 2.8 eV (yellow to blue). This behavior can be understood invoking the photon-assisted tunneling model which was previously successfully applied to highly doped GaAs LEDs. Even at the lowest temperatures, light emission still continues while the increase in the series resistance does not exceed a few tens of kΩ, which indicates absence of complete carrier freeze-out. On leave from P.N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow, Russia On leave from High Pressure Research Center, Warsaw, Poland     

使用共振腔实现受控非门及量子隐形传态的方案

提出一个使用三能级原子以及通过经典场对单粒子态的操控和两原子与单模腔场的共振作用实现受控非门的方案,并使用该方案完成单粒子态的隐行传态过程.该方案中原子与单模腔场的共振作用时间可以很短,这一特点对量子信息处理过程中的消相干问题的处理是非常有利的,这也是该方案与已有文献报道使用失谐腔的腔QED方案的主要区别之一.     

Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application

p-type NiO films were prepared at different oxidizing temperatures in O₂ ambient for normally-off AlGaN/GaN HFETs application. The crystalline structure, electrical properties and band gap of NiO films are dependent upon temperatures. Compared with the conventional Ni-gated HFETs, NiO-gated HFETs present positively shifted threshold voltage and smaller gate leakage current, while the drain current density shows slightly degradation. Combining the recess structure and NiO gate, normally-off GaN HFETs was achieved with a threshold voltage of approximately 0.5 V. The band diagram of the NiO/AlGaN/GaN structure demonstrates that the p-type conductivity and large conduction band offset between NiO and GaN cause the lift-up potential, which result in 2DEG depletion and positive threshold voltage shift.     

InGaAs-GaAs quantum dots for application in long wavelength (1.3 µm) resonant vertical cavity enhanced devices

Microcavity structures containing InGaAs-GaAs quantum dots (QDs) emitting at 1.3μm at 300 K have been studied. The energy distribution of excitons remains an nonequilibrium one up to room temperature due to high localization energies in these QDs. Carrier relaxation is found to proceed mainly via multiphonon processes. The luminescence emission from QDs in a microcavity exhibits a large spectral splitting of TE and TM components as observed in angle-resolved measurements amounting up to 10 nm for an angle of incidence of 30°. A 1.3 μm vertical cavity enhanced QD photodetector based on a single sheet of QDs is shown to have a quantum efficiency >10%. The ground state electroluminescence of a quantum dot resonant cavity light emitting diode shows no saturation up to 2 kAcm⁻².     

应变InGaAs/GaAs量子阱MOCVD生长优化及其在980 nm半导体激光器中的应用

使用低压MOCVD生长应变InGaAs/GaAs 980 nm量子阱.研究了生长温度、生长速度对量子阱光致发光谱(PL)的影响.并将优化后的量子阱生长条件应用于980 nm半导体激光器的研制中,获得了直流工作下,阈值电流为19 mA,未镀膜斜率效率为0.6 W/A,输出功率在100 mW的器件.     

Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates

AlGaN/GaN high electron mobility transistors (HEMTs) with Si and Al₂O₃ substrates reveals anomalies on I_ds-V_ds-T and I_gs-V_gs-T characteristics (degradation in drain current, kink effect, barrier height fluctuations, etc.). Stress and random telegraph signal (RTS) measurements prove the presence of trap centers responsible for drain current degradation. An explanation of the trapping mechanism responsible for current instabilities is proposed. Deep defects analysis performed by capacitance transient spectroscopy (C-DLTS), frequency dispersion of the output conductance (G_ds(f)), respectively, on gate/source and drain/source contacts and RTS prove the presence of deep defects localized, respectively, in the gate and in the channel regions. Defects detected by C-DLTS and G_ds(f) are strongly correlated, respectively, to barrier height inhomogeneities and kink anomalies. Gate current analysis confirms the presence of (G-R) centers acting like traps at the interface GaN/AlGaN. Finally, the localization of these traps defects is proposed.