薄膜光学常数的原位测定

薄膜的光学常数（折射率和消光系数）精度直接影响设计和制造的光学器件的性能。大多数光学常数的测定方法较为复杂,不能直接应用在镀膜过程中。提出了一种薄膜光学常数原位实时测量的方法,通过监测沉积材料的透射率可以快速准确地测量光学常数。测量了高吸收材料Si、低吸收材料Ta₂O₅和超低吸收材料SiO₂的近红外光学常数,用这种方法测得光学常数分别为n=3.22,k=4.6×10^-3,n=2.06,k=1.3×10^-3和n=1.46,k=6.6×10^-5。该方法适用于强吸收材料和弱吸收材料光学常数的测定,为在线精确测量薄膜的光学常数提供了一种有效的方法,对设计和制造高质量的光学器件具有重要意义。     

长/长波双色二类超晶格红外探测器研究

报道了长/长波双色二类超晶格红外焦平面探测器组件的研制。通过能带结构设计和分子束外延技术,获得了表面质量良好的长/长波双色超晶格外延材料。突破了长波超晶格低暗电流钝化、低损伤干法刻蚀等关键技术,制备出像元中心距30 μm的320×256长/长波双色InAs/GaSb超晶格焦平面探测器芯片。将芯片与双色读出电路互连,采用杜瓦封装,与制冷机耦合形成探测器组件。组件双波段50%后截止波长分别为7.7 μm（波段1）和10.0 μm（波段2）。波段1平均峰值探测率达到8.21×10¹⁰ cmW^-1Hz^1/2,NETD实现28.8 mK;波段2平均峰值探测率达到6.15×10¹⁰ cmW^-1Hz^1/2,NETD为37.8 mK,获得了清晰的成像效果,实现长/长波双色探测。     

平板介质的微波分裂腔法介电常数测试技术

为实现微波频段平板类介质材料的介电常数的无损测试,研究了分裂式圆柱形谐振腔测试方法。介绍了分裂式圆柱形谐振腔的电磁场分析理论,采用模式匹配技术实现了介质加载条件下腔内电磁场分布的精确求解,得到了腔体谐振频率与材料介电常数之间的准确关系。在理论分析的基础上,制作了空腔谐振频率为10 GHz的分裂式谐振腔,并与前期研制的闭式谐振腔进行对比测试,介电常数实部测量结果相对误差小于1%。与国外同类产品进行对比测试,介电常数实部结果基本一致,损耗角正切测量结果更接近于文献参考值。因此,微波分裂腔法能够实现平板介质板材的无损测量,具有准确度高,使用方便等突出优势,可在微波频段内实现介电常数为1～20,损耗角正切为1×10^-3～1×10^-5,板材厚度为0.1～2.0 mm的各类平板介质材料介电常数的准确测试。     

高k HfLaO栅介质MoS2晶体管的性能研究

比较研究了HfO₂与HfLaO栅介质多层MoS₂场效应晶体管。实验结果表明,与HfO₂栅介质MoS₂晶体管相比,HfLaO栅介质MoS₂晶体管表现出更优的电性能。电流开关比高达1×10⁸,亚阈斜率低至76 mV/dec,界面态密度低至1.1×10¹² cm-2·eV-1,载流子场效应迁移率高达1×10⁹ cm²·V-1·s-1。性能改善的原因在于镧(La)对HfO₂的掺杂形成HfLaO化合物,减小栅介质薄膜的表面粗糙度,降低缺陷电荷密度,改善了栅介质/沟道界面特性,从而减小了界面态密度,抑制了库仑散射和界面粗糙散射。最终,提高了多层MoS₂晶体管的场效应迁移率,改善了晶体管的亚阈特性。     

工作波长为2.94 μm保偏空芯负曲率光纤

提出一种保偏空芯负曲率光纤,可用于传输工作波长为2.94 μm的中红外激光。首先通过调整y方向包层管的厚度和嵌套管到包层管内径的最大距离使 y方向偏振模式与包层管表面模式发生微弱耦合,再通过优化纤芯直径和包层管的外径诱导y方向偏振模式与包层管表面模式发生相位匹配,造成y方向偏振模式泄露出纤芯。包层管间的缝隙引导高阶模式泄露出纤芯,而x方向偏振模式因包层管和嵌套管的厚度具有抑制耦合的作用而保持低损耗传输。最终得到一种工作波长为2.94 μm的保偏空芯负曲率光纤,x方向偏振模式的限制损耗为2.8×10^-2 dB/m,偏振消光比大于2×10³,高阶模抑制比大于100,双折射为1.4×10^-5。当光纤y方向弯曲,且半径为25 cm时,弯曲损耗为0.62 dB/m。     

具有低噪声及高线性度的高性能MOCVD-SiNx/AlN/GaN 毫米波MIS-HEMTs

文章在超薄势垒AlN/GaN异质结构上采用金属有机化学气相沉积（MOCVD）原位生长SiN_x栅介质,成功制备了高性能的SiN_x/AlN/GaN金属-绝缘体-半导体高电子迁移率晶体管（MIS-HEMTs）。深能级瞬态谱（DLTS）技术测试SiN_x/AlN的界面信息,显示其缺陷能级深度为0.236 eV,俘获截面为3.06×10^-19 cm^-2,提取的界面态密度为10¹⁰~10¹² cm^-2eV^-1,表明MOCVD原位生长的SiN_x可以有效降低界面态。同时器件表现出优越的直流、小信号和噪声性能。栅长为0.15 μm的器件在2 V的栅极电压（V_gs）下具有2.2 A/mm的最大饱和输出电流,峰值跨导为506 mS/mm,最大电流截止频率（f_T）和最大功率截止频率（f_MAX）分别达到了65 GHz和123 GHz,40 GHz下的最小噪声系数（NF_min）为1.07 dB,增益为 9.93 dB。V_ds = 6 V时对器件进行双音测试,器件的三阶交调输出功率（OIP3）为32.6 dBm,OIP3/P_dc达到11.2 dB。得益于高质量的SiN_x/AlN界面,SiN_x/AlN/GaN MIS-HEMT显示出了卓越的低噪声及高线性度,在毫米波领域具有一定的应用潜力。     

优质雪崩光电二极管

美国麻省理工学院和林肯实验室采用了倒置台面n⁺-InP/n-GaInAsP/n-InP/P⁺-InP结构,研制出响应到1.25微米的优质雪崩光电二极管。测量得到均匀雪崩增益为700,当M=10时,暗电流密度为3×10^-6安/厘米²,过量噪声因数约为3。     

超低损耗高双折射空芯反谐振太赫兹光子晶体光纤

本文提出了一种以环烯烃共聚物（Cyclic Olefin Copolymer, COC）为基底的超低损耗高双折射空芯反谐振太赫兹光子晶体光纤,该光纤的包层由两组（共六个）无节点嵌套管组成。采用时域有限差分法（Finite Difference Time Domain method, FDTD）结合完美匹配层（Perfectly Matched Layer, PML）边界条件对其导波特性进行分析。仿真结果表明,在0.8~1.35 THz范围内,总传输损耗小于0.1 dB/m,双折射大于2.12×10^-5,色散在±0.027 ps/THz/cm。在1.12 THz处,最低总传输损耗仅为0.543×10^-2 dB/m,双折射值为2.06×10^-4。同时,分析了该光纤的弯曲性能,表明在y方向,当弯曲半径超过19 cm时,弯曲损耗小于0.1 dB/m,具有良好的弯曲性能。     

Properties of p +-n structures with a buried layer of radiation-induced defects

The p ⁺-n structures based on n-type Si with dopant density 1.7×10¹³–1.2×10¹⁴ cm⁻³ were irradiated with ²³⁸Pu α particles. A layer containing radiation-induced defects with a density of the order of 3×10¹³ cm⁻³ was produced at a depth of 20 μm. This defect density gave rise to intense draining of nonequilibrium carriers in the injection-extraction regime with stationary injection as well as with pulsed generation by single particles. This makes it possible to treat the damaged layer as a plane, introduced into the bulk, with an infinite surface recombination rate. The radiation-induced defects also participated in decreasing the conductivity. A characteristic space charge distribution and, correspondingly, a bias dependence of the capacitance are observed in the structure under reverse bias. Despite the presence of formally three charge regions, four sections appear on the capacitance curve. This latter effect is due to the “additional” charge step arising in the contact potential difference field and is characteristic of compensated deep levels in semiconductors. Fiz. Tekh. Poluprovodn. 32, 359–365 (March 1998)     

基于X-LiNbO3/SiO2/Si低温漂、大机电耦合SH-SAW谐振器的设计

铌酸锂(LN)单晶薄膜具有较高的机电耦合系数(k² eff＞30%),其水平剪切(SH)声学模式常被应用于开发具有大机电耦合系数的薄膜声学谐振器和超宽带滤波器。但LN 的频率温度系数较大(TCF ＞ -50×10^-6/℃),这不仅会降低滤波器的可用有效带宽,同时也会限制器件的功率处理能力。采用3D周期有限元模型对基于X 切LN/SiO₂/Si结构SH 声表面波(SH-SAW)谐振器进行了优化研究。研究结果表明,当SH-SAW 传播角ψ=-10°~-20°、LN和SiO₂ 膜厚分别为hLN=0.1λ 和h_SiO2 =0.2λ(λ 为叉指换能器周期)、铝电极金属化率η=0.4、电极相对厚度h_Al/λ=5%~10%时,SH-SAW 谐振器的 k² eff 约为30%,且其TCF＜-20×10^-6/℃,有望用于开发新一代的低温漂、超宽带5G SAW 滤波器。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.