Molecular beam epitaxy of AlGaAs/Zn(Mn)Se hybrid nanostructures with InAs/AlGaAs quantum dots near the heterovalent interface

Features of the growth of InAs quantum dots in an Al_0.35Ga_0.65As matrix by molecular beam epitaxy at different substrate temperatures, deposition rates, and amounts of deposited InAs are studied. The optimum conditions for growing an array of low-density (≤2 × 10¹⁰ cm^?2) small (height of no more than 4 nm) self-organized quantum dots are determined. The possibility of the formation of optically active InAs quantum dots emitting in the energy range 1.3–1.4 eV at a distance of no more than 10 nm from the coherent heterovalent GaAs/ZnSe interface is demonstrated. It is established that inserting an optically inactive 5-nm GaAs quantum well resonantly coupled with InAs quantum dots into the upper AlGaAs barrier layer enhances the photoluminescence efficiency of the quantum-dot array in hybrid heterostructures.     

Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier

Electron microscopy studies of GaAs-based structures grown by molecular beam epitaxy and containing arrays of semiconductor InAs quantum dots and metal As quantum dots are performed. The array of InAs quantum dots is formed by the Stranski-Krastanov mechanism and consists of vertically coupled pairs of quantum dots separated by a GaAs spacer 10 nm thick. To separate the arrays of semiconductor and metal quantum dots and to prevent diffusion-induced mixing, the array of InAs quantum dots is overgrown with an AlAs barrier layer 5 or 10 nm thick, after which a GaAs layer is grown at a comparatively low temperature (180°C). The array of As quantum dots is formed in an As-enriched layer of the low-temperature GaAs by means of post-growth annealing at 400–760°C for 15 min. It is established that the AlAs barrier layer has a surface profile corresponding to that of a subbarrier layer with InAs quantum dots. The presence of such a profile causes the formation of V-shaped structural defects upon subsequent overgrowth with the GaAs layer. Besides, it was obtained that AlAs layer is thinned over the InAs quantum dots tops. It is shown that the AlAs barrier layer in the regions between the InAs quantum dots effectively prevents the starting diffusion of excess As at annealing temperatures up to 600°C. However, the concentration of mechanical stresses and the reduced thickness of the AlAs barrier layer near the tops of the InAs quantum dots lead to local barrier breakthroughs and the diffusion of As quantum dots into the region of coupled pairs of InAs quantum dots at higher annealing temperatures.     

Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy

The first results of the liquid-phase epitaxial growth of quantum dots in the InSb/GaSb system and atomic-force microscopy data on the structural characteristics of the quantum dots are reported. It is shown that the surface density, shape, and size of nanoislands depend on the deposition temperature and the chemical properties of the matrix surface. Arrays of InSb quantum dots on GaSb (001) substrates are produced in the temperature range T = 450–465°C. The average dimensions of the quantum dots correspond to a height of h = 3 nm and a base dimension of D = 30 nm; the surface density is 3 × 10⁹ cm^–2.     

Study of the Structural and Luminescence Properties of InAs/GaAs Heterostructures with Bi-Doped Potential Barriers

The influence of Bi in GaAs barrier layers on the structural and optical properties of InAs/GaAs quantum-dot heterostructures is studied. By atomic-force microscopy and Raman spectroscopy, it is established that the introduction of Bi into GaAs to a content of up to 5 at % results in a decrease in the density of InAs quantum dots from 1.58 × 10¹⁰ to 0.93 × 10¹⁰ cm^–2. The effect is defined by a decrease in the mismatch between the crystal-lattice parameters at the InAs/GaAsBi heterointerface. In this case, an increase in the height of InAs quantum dots is detected. This increase is apparently due to intensification of the surface diffusion of In during growth at the GaAsBi surface. Analysis of the luminescence properties shows that the doping of GaAs potential barriers with Bi is accompanied by a red shift of the emission peak related to InAs quantum dots and by a decrease in the width of this peak.     

Specific features of nanosize object formation in an InSb/InAs system by metal-organic vapor-phase epitaxy

InSb quantum dashes (up to 4 × 10⁹ cm^?2) and quantum dots (QDs) (7 × 10⁹ cm^?2) were produced on InAs (100) substrates by the standard method of metal-organic vapor-phase epitaxy in the temperature range 420–440°C. A transformation of the shape and size of the quantum dashes is observed depending on the technological conditions of epitaxial deposition (quality of the matrix surface, growth temperature, flow rate, ratio between Group-V and -III elements in the gas phase, etc.). Control over the diffusion rate of reagents on the surface of the matrix based on an InAs epitaxial layer leads to a change in the transverse dimensions of the quantum dashes being deposited within the range 150–500 nm in length and 100–150 nm in width, respectively, with their height remaining at 50 nm. InSb QDs are grown on the surface of the InAs substrate at T = 440°C. A bimodal size distribution of the nano-objects is observed: there are small (average height 15 nm; average diameter 60 nm) and large (average height 25 nm; average diameter 110 nm) QDs.     

Photoelectric spectroscopy of InAs/GaAs quantum dot heterostructures in a semiconductor/electrolyte system

The photovoltaic effect in the semiconductor/electrolyte junction is an effective method for investigation of the energy spectrum of InAs/GaAs heterostructures with self-assembled quantum dots. An important advantage of this method is its high sensitivity. This makes it possible to obtain photoelectric spectra from quantum dots with high barriers for the electron and hole emission from quantum dots into the matrix even if the surface density of the dots is low (～10⁹ cm^?2). In a strong transverse electric field, broadening of the lines of optical transitions and emission of electrons and holes from quantum dots into the matrix directly from the excited states are observed. The effect of the photovoltage sign reversal was detected for a sufficiently high positive bias across the barrier within the semiconductor. This effect is related to the formation of a positive charge at the interface between the cap layer and electrolyte and of the negative charge on impurities and defects in the quantum dot layer.     

Ultra-low density InAs quantum dots

We show that InAs quantum dots (QDs) can be grown by molecular beam epitaxy (MBE) with an ultralow density of sin 10⁷ cm^?2 without any preliminary or post-growth surface treatment. The strain-induced QD formation proceeds via the standard Stranski-Krastanow mechanism, where the InAs coverage is decreased to 1.3–1.5 monolayers (MLs). By using off-cut GaAs (100) substrates, we facilitate the island nucleation in this subcritical coverage range without any growth interruption. The QD density dependences on the InAs coverage are studied by photoluminescence, atomic force microscopy, transmission electron microscopy, and are well reproduced by the universal double exponential shapes. This method enables the fabrication of InAs QDs with controllable density in the range 10⁷–10⁸ cm^?2, exhibiting bright photoluminescence.     

Terahertz luminescence of GaAs-based heterostructures with quantum wells under the optical excitation of donors

Spontaneous emission from selectively doped GaAs/InGaAs:Si and GaAs/InGaAsP:Si heterostructures is studied in the frequency range of ～3–3.5 THz for transitions between the states of the two-dimensional subband and donor center (Si) under the condition of excitation with a CO₂ laser at liquid-helium temperature. It is shown that the population inversion and amplification in an active layer of 100–300 cm^?1 in multilayered structures with quantum wells (50 periods) and a concentration of doping centers N _D ≈ 10¹¹ cm^?2 can be attained under the excitation-flux density 10²³ photons/(cm² s).     

Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth

Indium-antimonide quantum dots (7–9 × 10⁹ cm²) are produced on an InAs(001) substrate by metal-organic vapor-phase epitaxy at a temperature of T = 440°C. Epitaxial deposition occurred simultaneously onto an InAs binary matrix and an InAsSbP quaternary alloy matrix layer lattice-matched to the InAs substrate in terms of the lattice parameter. Transformation of the quantum-dot shape and size is studied in relation to the chemical composition of the working matrix surface, onto which the quantum dots are deposited. The use of a multicomponent layer makes it possible to control the lattice parameter of the matrix and the strains produced in the system during the formation of self-assembled quantum dots.     

GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process

Epitaxial GaAs layers containing InAs semiconductor quantum dots and As metal quantum dots are grown by molecular beam epitaxy. The InAs quantum dots are formed by the Stranskii-Krastanow mechanism, whereas the As quantum dots are self-assembled in the GaAs layer grown at low temperature with a large As excess. The microstructure of the samples is studied by transmission electron microscopy. It is established that the As metal quantum dots formed in the immediate vicinity of the InAs semiconductor quantum dots are larger in size than the As quantum dots formed far from the InAs quantum dots. This is apparently due to the effect of strain fields of the InAs quantum dots upon the self-assembling of As quantum dots. Another phenomenon apparently associated with local strains around the InAs quantum dots is the formation of V-like defects (stacking faults) during the overgrowth of the InAs quantum dots with the GaAs layer by low-temperature molecular beam epitaxy. Such defects have a profound effect on the self-assembling of As quantum dots. Specifically, on high-temperature annealing needed for the formation of large-sized As quantum dots by Ostwald ripening, the V-like defects bring about the dissolution of the As quantum dots in the vicinity of the defects. In this case, excess arsenic most probably diffuses towards the open surface of the sample via the channels of accelerated diffusion in the planes of stacking faults.     

Properties of GaAs nanowhiskers grown on a GaAs(111)B surface using a combined technique

Arrays of GaAs whiskers on GaAs(111)B substrates were grown using a technique combining vacuum evaporation and molecular-beam epitaxy. The surface structural properties of the samples obtained were studied by scanning electron microscopy. It was found that the areal density of the whiskers amounted to (1–2)×10⁹ cm^?2. The typical dimensions of the whiskers were 30–150 nm (diameter) and 300–800 nm (length). It was shown that the whisker size can be controlled by changing the growth conditions and varying the thickness of the evaporated Au film.     

Molecular Engineering of Blue Fluorescent Molecules Based on Silicon End‐Capped Diphenylaminofluorene Derivatives for Efficient Organic Light‐Emitting Materials

Blue fluorescent materials based on silicone end‐capped 2‐diphenylaminofluorene derivatives are synthesized and characterized. These materials are doped into a 2‐methyl‐9,10‐di‐[2‐naphthyl]anthracene host as blue dopant materials in the emitting layer of organic light‐emitting diode devices bearing a structure of ITO/DNTPD (60 nm)/NPB (30 nm)/emitting layer (30 nm)/Alq₃ (20 nm)/LiF (1.0 nm)/Al (200 nm). All devices exhibit highly efficient blue electroluminescence with high external quantum efficiencies (3.47%–7.34% at 20 mA cm^?2). The best luminous efficiency of 11.2 cd A^?1 and highest quantum efficiency of 7.34% at 20 mA cm^?2 are obtained in a device with CIE coordinates (0.15, 0.25). A deep‐blue OLED with CIE coordinates (0.15, 0.14) exhibits a luminous efficiency of 3.70 cd A^?1 and quantum efficiency of 3.47% at 20 mA cm^?2.     

Analysis of thermal emission processes of electrons from arrays of InAs quantum dots in the space charge region of GaAs matrix

We thoroughly analyze admittance spectroscopy data on the temperature dependence of the rate of electron emission from the ground state of InAs quantum dots in the space-charge layer of a Schottky barrier on an n-GaAs matrix. The experimental results are described using a one-dimensional model of thermally activated tunneling with the involvement of virtual states. The shape of the potential barrier to be overcome by emitted electrons is selected by introducing the effective concentration of shallow donors such that the electron binding energies in the quantum dots were similar to those determined from the measured capacitance-voltage characteristics of the investigated structures. The obtained electron-capture cross sections increase with the ground-state binding energy (quantum dot size). The capture cross-section values for InAs quantum dots with average lateral sizes of 9 and 20 nm lie in the ranges 1 × 10^?14?2 × 10^?13 and 4 × 10^?12?2 × 10^?11 cm².     

Potential barrier formation at a metal-semiconductor contact using selective removal of atoms

The possibility of forming a potential profile in a semiconductor by forming a metal film on its surface via selective removal of oxygen atoms from a deposited metal oxide layer was studied. Selective removal of atoms (SRA) was performed using a beam of accelerated protons with an energy of about 1 keV. Epitaxially grown GaAs films with a thickness of ～100 nm and an electron concentration of 2×10¹⁷ cm^?3 were chosen as the semiconductor material, and W obtained from WO₃ was used as the metal. The potential profile appeared due to the formation of a Schottky barrier at the metal-semiconductor interface. It was found that the Schottky barrier formed at W/GaAs contacts made by the SRA method is noticeably higher (～1 eV) than the barrier formed at the contacts made by conventional metal deposition (0.8 eV for W/GaAs). The data presented indicate that there is no damaged layer in the gate region of the structures, which is most strongly affected by the proton irradiation. Specifically, it was shown that the electron mobility in this region equals the mobility in bulk GaAs with the same doping level.     

Coupling of electron states in the InAs/GaAs quantum dot molecule

Deep level transient spectroscopy (DLTS) is used to study electron emission from the states in the system of vertically correlated InAs quantum dots in the p-n InAs/GaAs heterostructures, in relation to the thickness of the GaAs spacer between the two layers of InAs quantum dots and to the reverse-bias voltage. It is established that, with the 100 Å GaAs spacer, the InAs/GaAs heterostructure manifests itself as a system of uncoupled quantum dots. The DLTS spectra of such structures exhibit two peaks that are defined by the ground state and the excited state of an individual quantum dot, with energy levels slightly shifted (by 1–2 eV), due to the Stark effect. For the InAs/GaAs heterostructure with two layers of InAs quantum dots separated by the 40 Å GaAs spacer, it is found that the quantum dots are in the molecule-type phase. Hybridization of the electron states of two closely located quantum dots results in the splitting of the levels into bonding and antibonding levels corresponding to the electron ground states and excited states of the 1s ⁺, 1s ^?, 2p ⁺, 2p ^?, and 3d ⁺ types. These states manifest themselves as five peaks in the DLTS spectra. For these quantum states, a large Stark shift of energy levels (10–40 meV) and crossing of the dependences of the energy on the electric field are observed. The structures with vertically correlated quantum dots are grown by molecular beam epitaxy, with self-assembling effects.     

In<Subscript>0.8</Subscript>Ga<Subscript>0.2</Subscript>As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties

The growth peculiarities of In_0.8Ga_0.2As quantum dots and their arrays on GaAs surface by metalorganic vapor-phase epitaxy are investigated. The bimodal size distribution of In_0.8Ga_0.2As quantum dots is established from the photoluminescence spectra recorded at different temperatures. The growth parameters were determined at which the stacking of 20 In_0.8Ga_0.2As quantum-dot layers in the active area of a GaAs solar cell makes it possible to enhance the photogenerated current by 0.97 and 0.77 mA/cm² for space and terrestrial solar spectra, respectively, with the high quality of the p–n junction retained. The photogenerated current in a solar cell with quantum dots is higher than in the reference GaAs structure by ~1% with regard to nonradiative-recombination loss originating from stresses induced by the quantum-dot array.     

The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors

A new possibility for growing InAs/GaAs quantum dot heterostructures for infrared photoelectric detectors by metal-organic vapor-phase epitaxy is discussed. The specific features of the technological process are the prolonged time of growth of quantum dots and the alternation of the low-and high-temperature modes of overgrowing the quantum dots with GaAs barrier layers. During overgrowth, large-sized quantum dots are partially dissolved, and the secondary InGaAs quantum well is formed of the material of the dissolved large islands. In this case, a sandwich structure is formed. In this structure, quantum dots are arranged between two thin layers with an increased content of indium, namely, between the wetting InAs layer and the secondary InGaAs layer. The height of the quantum dots depends on the thickness of the GaAs layer grown at a comparatively low temperature. The structures exhibit intraband photoconductivity at a wavelength around 4.5 μm at temperatures up to 200 K. At 90 K, the photosensitivity is 0.5 A/W, and the detectivity is 3 × 10⁹ cm Hz^1/2W^?1.     

Fabrication and analysis of multijunction solar cells with a quantum dot (In)GaAs junction

InAs quantum dots (QDs) have been incorporated to bandgap engineer the (In)GaAs junction of (In)GaAs/Ge double‐junction solar cells and InGaP/(In)GaAs/Ge triple‐junction solar cells on 4‐in. wafers. One sun AM0 current–voltage measurement shows consistent performance across the wafer. Quantum efficiency analysis shows similar aforementioned bandgap performance of baseline and QD solar cells, whereas integrated sub‐band gap current of 10 InAs QD layers shows a gain of 0.20 mA/cm². Comparing QD double‐junction solar cells and QD triple‐junction solar cells to baseline structures shows that the (In)GaAs junction has a V_oc loss of 50 mV and the InGaP 70 mV. Transmission electron microscopy imaging does not reveal defective material and shows a buried QD density of 10¹¹ cm⁻², which is consistent with the density of QDs measured on the surface of a test structure. Although slightly lower in efficiency, the QD solar cells have uniform performance across 4‐in. wafers. Copyright © 2013 John Wiley & Sons, Ltd.     

Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling

The prerequisites for electron storage in the quantum well of a metal–oxide–p ⁺-Si resonant-tunneling structure and the effect of the stored charge on the voltage distribution are theoretically investigated. Systems with SiO₂, HfO₂, and TiO₂ insulators are studied. It is demonstrated that the occurrence of a charge in the well in the case of resonant transport can be expected in structures on substrates with an acceptor concentration from (5–6) × 10¹⁸ to (2–3) × 10¹⁹ cm^–3 in the range of oxide thicknesses dependent on this concentration. In particular, the oxide layer thickness in the structures with SiO₂/p ⁺-Si(10¹⁹ cm^–3) should exceed ~3 nm. The electron density in the well can reach ~10¹² cm^–2 and higher. However, the effect of this charge on the electrostatics of the structure becomes noticeable only at relatively high voltages far above the activation of resonant transport through the first subband.     

Interface state density in Au-nGaAs Schottky diodes

A method for determining the surface state density in Schottky diodes taking into account both I–V and C–V data while considering the presence of a deep donor level is presented. The model assumes that the barrier height is controlled by the energy distribution of surface states in equilibrium with the metal and the applied potential and does not include, explicitly, an interfacial layer. The model was applied to extract interface state densities of Au-nGaAs guarded Schottky diodes fabricated from bulk and VPE (100) GaAs with carrier conentrations between 3 × 10¹⁵ and 8 × 10¹⁶ cm^?3. These diodes exhibited ideality (n) factors of approximately 1.02 and room temperature saturation current densities ～10^?8 A/cm². This model is in substantial agreement with forward bias measurements over the 77–360°K temperature range investigated, in that a temperature-independent energy distribution of interface states was obtained. In reverse bias the interface state model is most valid with the higher carrier concentration material and at high temperature and low bias voltage. Typical interface state densities from 0.07 eV above the zero bias Fermi level to 0.01 eV below the Fermi level were 2 × 10¹³ cm^?2 eV^?1. The validity of the model under reverse bias is restricted by a non-thermionic reverse current, thought to be enhance field emission from traps.