纳米钯材料的制备及其在PCB化学镀铜中的应用

以二水合氯化钯为原料,PVP（聚乙烯吡咯烷酮）为分散剂,抗坏血酸（从）为还原剂,在常温下还原Pd^2＋制备纳米钯。通过激光动态散射法（DSL）,透射电子显微镜（TEM）和X射线衍射仪（XRD）对纳米钯进行了表征分析,结果显示,在PVP分散剂的作用下,得到的纳米钯为粒径8nm～22nm,无其他的氧化物存在。该纳米钯材料可作为化学沉铜的活化液,可以减少沉铜的工艺步骤,经过金相显微镜观测化学镀铜后的孔背光级数均达到10级,通过扫描电镜观察镀铜层表面颗粒均匀、平整。所制备的纳米钯是一种优异的化学镀铜活化剂。     

氧化铝陶瓷基板化学镀铜金属化及镀层结构

通过化学镀铜在氧化铝陶瓷基板表面实现了金属化,采用SEM研究了镀铜层表面微观形貌以及热处理的影响,检测分析了金属化镀层附着力。结果表明:通过控制镀液中铜离子浓度以及铜沉积速率,在基板表面可形成均匀致密的铜金属化层;热处理后进一步提高镀层致密化和导电性,其方阻由3.6 mΩ/□降为2.3 mΩ/□。划痕法测试表明镀铜层与氧化铝陶瓷基板结合紧密无起翘,可以满足敷铜基板的要求。     

金属化花粉红外、微波特性测试与分析

针对当前包覆型复合功能材料的需求,利用化学镀铜方法制备了表面镀铜的金属化花粉,对金属化花粉的形态、红外与微波特性进行了测试与分析。SEM图显示花粉金属化后形态保持良好,不发生破裂或变形,镀层厚度较均匀、致密。外层包覆的金属镀层使颗粒显示出特殊的红外与微波特性,而轻质花粉内核保证了颗粒具有较低的质量密度。研究结果表明:金属化花粉具有作为红外与微波波段材料的潜力。     

银活化液在PCB化学镀铜的研究

文章简述了印制电路板孔金属化用的各种钯活化液的原理和特点,提出了一种银活化液,并将其催化活性和催化效果与胶体钯进行了对比。结果表明银活化用于化学镀铜,诱导时间快,可以节约成本。     

化学镀镍/化学镀钯/浸金表面涂覆层的再提出

文章概述了化学镀镍/化学镀钯/浸金表面涂(镀)覆层的特性.不仅它能够满足各种各样的类型元件和安装工艺的要求,而且也能满足高密度的IC基板封装的要求.因而,化学镀镍/化学镀钯/浸金表面镀层是一种"万能"的镀层,具有最广泛的应用前景.     

在Ag导电胶上化学镀铜工艺

概述了由Ag导电胶形成的Ag导电膜上的化学镀铜工艺,其特征在于采用新的活化工艺取代传统的Pd催化剂,可以在Ag导电膜上形成均匀致密,无镀层扩展和优良附着性的化学镀铜层,特别适用于印制板的Ag导电胶上选择性化学镀铜。     

改性碳纤维制备及其RCS性能研究

碳纤维是新兴的功能材料,具备一定导电性能,在雷达干扰方面具有广阔的应用前景。采用化学镀沉积方法,在碳纤维表面沉积铜镀层,然后再采用化学气相沉积工艺,在同镀层表面沉积镍镀层。通过SEM、EDS、XRD等分析手段对改性碳纤维进行了表征,测试了改性碳纤维材料镀层的表观形貌和组成成分,并利用RCS测试系统对改性碳纤维的RCS性能进行了测试。结果表明,得到的改性碳纤维表面合金镀层均匀、平整,合金镀层主要为金属单质状态存在。改性碳纤维的RCS性能较原丝有很大增幅,且与理论值相近。     

亚铁氰化钾添加于次亚磷酸钠还原化学镀铜的试验优化

化学镀铜技术是印制电路中的重要部分,采用正交实验法研究了以次亚磷酸钠为还原剂添加亚铁氰化钾的化学镀铜溶液,得到了的最佳参数和条件.镀液中添加亚铁氰化钾可以显著降低沉积速度,使镀层变得均匀致密,形貌得到改善,电阻率明显降低,镀层中镍的含量也有所降低.     

高精度陶瓷基板化学镀多层膜技术研究

描述了针对高精度陶瓷基板采用化学镀的技术,对陶瓷基板线条进行金属化,达到多种膜层结构,以满足产品所需要的特殊厚度、电性能和金丝压焊的要求。研究了化学镀厚铜、离子钯活化、化学镀镍和化学镀厚金溶液的各项参数变化,以及参数变化对陶瓷基板线条厚度和精度的影响。并对实验结果进行分析,讨论各种现象出现的原因。     

新产品与新技术（88）

纳米银代替金属钯活化的化学镀銅制程 日本奥野制药公司与DIC公司合作开发出一种不需要金属钯活化的化学镀銅制程,称“NACE制程”,是使用纳米银分散液作为活化剂代替现有的钯活化剂。在印制电路板制造中化学镀铜用到贵金属钯,金属钯的价格在不断上升,使得PCB成本加重。现在这种“NACE制程”的化学镀銅可以降低材料成本,并可使既有设备,缩短工时,提高铜层结合力,减少表面触媒残存率和电镀的分布均匀性良好。这种新溶液由DIC负责提供纳米银分散液,奥野制药配套全制程化学品出售,计划今年内商品化。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.