ZnS头罩增透保护膜系制备

利用计算机对不同运动轨迹下ZnS头罩外表面膜厚分布进行了模拟,优化出头罩的最佳运动轨迹,在该轨轨迹下采用射频磁控反应溅射（RRFS）法进行头罩镀膜,能够得到满足使用要求的薄膜厚度均匀性。实验结果表明,头罩外表面薄膜厚度不均匀性小于10％,双面镀膜后,8－11.5 μm波段平均透过率从69.6%提高到87．2％以上,透过率的不均匀性小于1．2％,满足了红外应用中对ZnS头罩的要求。     

大口径多光谱ZnS头罩的研制

多光谱ZnS是一种综合性能优异的红外光学材料,在长波红外及多波段红外探测成像系统中被广泛应用.化学气相沉积和热等静压后处理是制备多光谱ZnS材料的关键技术.介绍了化学气相沉积工艺和热等静压处理工艺制备多光谱ZnS的工艺原理及沉积大口径头罩的结构设计;报道了研制成功的270 mm大口径多光谱ZnS头罩.经测试分析,头罩的全波段透过率均已接近理论水平、吸收系数≤0.01 cm-1、折射指数均匀性达到2.2×10-5硬度160 kg/mm2、抗弯强度70 MPa、断裂韧性1.0 MPa·m1/2.与美国Rohm＆Haas公司的多光谱ZnS产品相比,该头罩的主要性能指标与其处于同一水平.     

基于二维相关分析的ZnS材料声子交互作用

硫化锌材料是长波红外光学窗口材料优选材料之一.针对化学气相沉积(CVD)和热压成形(HP)两种工艺制备的硫化锌材料,研究了从室温到600℃的光谱透过率变化现象,基于二维相关光谱分析技术,获得了长波吸收区内的声子交互作用.研究结果表明:在700~1250 cm~(-1)的长波吸收波段,CVD ZnS的声子频率为横向振动模式下(TO)的三次谐波频率和纵向声学模式下(LA)的三次谐波频率;HP ZnS的声子频率分别为3TO、3LA和4LA,并且在温度作用下的响应顺序依次为3LA、3TO和4LA.两种工艺制备的ZnS杂质振动吸收在温度作用下对2 000~1 250 cm~(-1)范围内的光谱透过率产生影响,出现不同程度的透过率增加现象,由于两者含有杂质的区别,在高温下CVD ZnS的透过率变化比HP ZnS较为显著.     

射频磁控溅射法在柔性聚酰亚胺衬底上制备ZnS薄膜及其特性研究

为使Ⅱ-Ⅵ族化合物ZnS薄膜具有可弯曲性,选用柔性的聚酰亚胺作为衬底材料,用射频磁控溅射法沉积ZnS薄膜,对所制备薄膜的结晶结构、组分和光学特性进行分析.实验结果表明,所制备薄膜为结晶态的闪锌矿ZnS结构,择优取向为(111)晶面,晶粒尺寸为25.6 nm.薄膜组分接近化学计量比,并具有少量的S损失.薄膜在可见光区和近红外光区的平均透射率分别为82.0％和90.5％,透光特性良好.作为对比,在钠钙玻璃衬底上溅射的ZnS薄膜的结晶度高于聚酰亚胺衬底薄膜,但其透射率略低于柔性ZnS薄膜.实验结果表明了用磁控溅射法在柔性聚酰亚胺衬底上制备ZnS薄膜的可行性.     

热解CVD方法制备氧化铍薄膜的研究

本文用碱式甲酸铍为源,在源区温度250—330℃,沉积区温度440—650℃的条件下,利用热解CVD方法制得了BeO薄膜,并对BeO 薄膜的物理和化学性能做了测量和试验.     

ZnS纳米颗粒的制备及其特性研究

用水热法制备了球形纳米ZnS粉体,讨论了反应物摩尔配比、生长时间和反应温度对ZnS纳米晶粒的形貌和尺寸的影响.通过XRD,TEM表征了Zns纳米粉体物相结构和表面形貌.用紫外-可见吸收光谱研究了样品.     

ZnS纳米粒子的制备与表征

采用水热法以乙酸锌和硫化钠为原料,尿素为矿化剂制备ZnS纳米粒子。讨论了反应温度,反应时间,矿化剂浓度对ZnS纳米粒子尺寸和形貌的影响。通过XRD、TEM、UV-vis吸收光谱表征了ZnS纳米粒子的形貌、尺寸和结构。结果表明,采用尿素作为矿化剂,在较宽温度范围(120~200℃)内均能制备出分散良好、平均粒径为12nm的球形ZnS纳米粒子。     

Transformation of luminescence centers in CVD ZnS films subjected to a high hydrostatic pressure

The cathodoluminescence and optical-transmission spectra of ZnS were analyzed to study the effect of a high hydrostatic gas pressure (1500 atm at 1000°C) on the equilibrium between intrinsic point defects in zinc sulfide grown by chemical vapor deposition (CVD) with an excess of zinc. The cathodoluminescence spectra were measured at 80–300 K and excitation levels of 10²² and 10²⁶ cm⁻³ s⁻¹; the optical-transmission spectra were measured at 300 K in the wavelength range 4–12 μm. It is found that exposure to a high hydrostatic gas pressure transforms the self-activated emission in the cathodoluminescence spectrum: (i) a new short-wave-length band appears at 415 nm with its intensity increasing by one to three orders of magnitude; and (ii) the long-wavelength band that peaks at 445 nm and is observed in as-grown crystals becomes quenched. Simultaneously, the cathodoluminescence band peaked at 850 nm and related to vacancies V _S is no longer observed after high-pressure treatment. These effects are attributed to a partial escape of excess zinc (Zn_i) from crystals and additional incorporation of oxygen into lattice sites (O_S). A doublet band I ₁, which peaked at ∼331–332 nm at 80 K and at ∼342–343 nm at 300 K and is related to excitons bound to acceptor levels of oxygen centers, was observed. This band is found to be dominant in the cathodoluminescence spectrum at an excitation level of 10²⁶ cm⁻³ s⁻¹. Traces of the ZnO phase are apparent after the high-pressure treatment in both the cathodolumi-nescence spectra (the bands at 730 and 370 nm) and the transmission spectra (narrow bands in the region of 6–7 μm). __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 1, 2004, pp. 39–43. Original Russian Text Copyright ? 2004 by Morozova, Karetnikov, Plotnichenko, Gavrishchuk, Yashina, Ikonnikov.     

以ZnS为源用化学气相沉积法在硅衬底上生长ZnO纳米颗粒

首次以ZnS为源,采用化学气相沉积法在抛光的Si单晶片衬底上生长晶态的ZnO纳米颗粒,其形貌、尺寸和密度都与气体流量、衬底温度、生长时间以及有无催化剂等生长条件密切相关．在没有Au催化的条件下,ZnO颗粒呈圆形颗粒,直径多在30-200nm之间,密度为10^4-10^9cm^-2;有Au催化的条件下,ZnO纳米颗粒呈六边形,平均尺寸明显变小,在10—100cm之间,而密度显著提高,为10^8-10^10cm^-2所制备的纳米ZnO颗粒在497nm和376nm附近分别有很强和较弱的光致发光．     

超大规模集成电路的CVD薄膜淀积技术

介绍了在超大规模集成电路制造工艺中,用化学气相（ＣＶＤ）方法淀积各种薄膜的反应机理和特性,及这些薄膜在器件制造工艺中的应用。     

超大规模集成电路中的CVD薄膜淀积技术

介绍了在超大规模集成电路制造工艺中 ,用化学气相 (CVD)方法淀积各种薄膜的反应机理和特性 ,及这些薄膜在器件制造工艺中的应用。     

MO CVD interconnects for spherical semiconductors

This paper describes MO CVD as one of the key enabling technologies for making the integrated circuits (ICs) on silicon spheres. We begin with the concept of gas suspension reactor that comprises the main part of film deposition system. The gas suspension reactor approach is shown to be scalable to producing the coated spheres at high manufacturing rates of 1–100 spheres/s. The application of the system to making of Cu, Al, Ti, TiN, and Ta CVD films is demonstrated. We conclude with showing some of the electrical characteristics of first active devices on a 1 mm diameter sphere.     

New precursors for CVD copper metallization

A novel CVD copper process is described using two new copper CVD precursors, KI3 and KI5, for the fabrication of IC or TSV (Through Silicon Via) copper interconnects. The highly conformal CVD copper can provide seed layers for subsequent copper electroplating or can be used to directly fabricate the interconnect in one step. These new precursors are thermally stable yet chemically reactive under CVD conditions, growing copper films of exceptionally high purity at high growth rates. Their thermal stability can allow for elevated evaporation temperatures to generate the high precursor vapor pressures needed for deep penetration into high aspect ratio TSV vias. Using formic acid vapor as a reducing gas with KI5, copper films of >99.99 atomic % purity were grown at 250 °C on titanium nitride at a growth rate of > 1500 Å/min. Using tantalum nitride coated TSV type wafers, ∼ 1700 Å of highly conformal copper was grown at 225 °C into 32 μm × 5 μm trenches with good adhesion. With ruthenium barriers we were able to grow copper at 125 °C at a rate of 20 Å/min to give a continuous ∼ 300 Å copper film. In this respect, rapid low temperature CVD copper growth offers an alternative to the long cycle times associated with copper ALD which can contribute to copper agglomeration occurring.     

CVD金刚石膜表面图形化加工技术的研究

首先用CVD法制备金刚石厚膜,接着在其表面利用氢等离子体辅助刻蚀,然后在铁薄膜的催石墨化作用下,对金刚石膜的表面进行了选择性的刻蚀.结果表明,在氢等离子体的辅助作用下,铁薄膜可以持续对CVD金刚石膜进行刻蚀;如果控制铁薄膜的形状和厚度,可以实现对CVD金刚石膜表面较精确的图形化刻蚀.该技术有望成为一种新的刻蚀金刚石膜的方法.     

High-temperature CVD for crystalline-silicon thin-film solar cells

The fundamentals of thermal CVD for the deposition of silicon at high temperatures are briefly discussed and applied to the conditions in the CVD system that we have constructed and characterized. Our system fulfils basic requirements to be met for solar cell application; solar cells made from epitaxial layers on various substrates were fabricated. The high-quality cells achieved 17.6% efficiency proving the excellent performance of our system, the cells on economically relevant substrates achieved 8% efficiency which still needs improvement