LTE网络S1AP监测方案的研究与实现

为实现对LTE网络中S1AP的监测,在介绍LTE网络测试仪软件平台设计方案的基础上,针对国内外现有网络协议监测技术中协议解码、呼叫记录(call data record,CDR)合成研究方案的时效性的不足,设计了S1AP监测模块的实现方案。该方案采用定义和实现相分离的方法进行消息解码,提高了代码的独立性和可移植性,使用散列索引和超时管理机制进行S1AP消息合成,保证了合成的准确性和有效性。本文方案已成功应用于LTE网络测试仪中,使用仿真数据进行测试,效果良好。     

移动网络用户信息关联系统的设计与实现

移动网络的高速发展给人们的日常生活和工作方式带来了便利的同时也带来了网络安全问题,针对此问题,通过对LTE/4G网络中的S11接口的信令和S1-U接口的数据进行分析,结合GTP协议解析,提出了实现移动网络用户身份信息和数据相关联的系统,该系统能够解析出S11接口中的用户身份信息,同时还能够关联分析出用户的位置变化情况,为网络安全的监控与保护提供了有效的技术支持。     

LTE网络测试仪S6a接口信令监测的实现

文章通过LTE网络测试仪这个平台完成了对LTE系统S6a接口中的Diameter协议信令的监测,阐述了LTE网络测试仪的整体设计方案,介绍了S6a接口Diameter协议的解码原理,重点设计完成了Diameter的呼叫数据记录(CDR)合成,并提出一种hash算法,解决了Diameter的CDR合成问题。最后,通过LTE网络测试系统仿真验证了结论。     

LTE信令监测系统中S6a接口Diameter协议解码模块设计与实现

通过对LTE网络中S6a接口所遵守的Diameter协议研究和分析,设计并实现了其解码模块。为了满足不同功能模块对解码结果的调用,在解码模块中设计和实现了两种不同接口-详细解码接口和简单解码接口。针对传统解码实现中执行速度慢、效率低、代码冗余度大、不易维护等缺点,创新性的提出了分层解码、递归解码等多个解决方案。并通过LTE信令监测系统成功实现了Diameter协议中位置更新请求(Update-Location-Request)过程的解码,证明了设计方案的可行性。此方案已应用于LTE信令监测系统中,效果良好,达到了对Diameter协议解码的目标。     

ASN.1编解码模块在LTE协议栈中的研究与应用

ASN.1能实现异构系统之间的信息交换,用它描述的信息独立于任何应用环境,开发LTE协议栈软件必须设计并实现针对RRC消息的ASN.1编解码模块。通过分析ASN.1类型及其编码规则,结合LTE协议栈软件需求,提出了应用于LTE协议栈软件的ASN.1编解码模块的设计方法,该方法采用模块化设计。通过对编解码模块的测试,证明了它对LTE协议栈中RRC消息的编解码功能。该方法具有实际应用价值和推广价值。     

LTE网络接口的协议一致性测试研究

在研究LTE网络演进进程、网络架构及接口协议特性的基础上提出了一种针对X2和S1接口的协议一致性测试方案.从产品实现的角度介绍了该方案的软硬件平台架构.该方案采用硬件解码技术应对LTE网络中高速网络流所带来的协议数据包处理问题,在软件架构中提供开放的用户接口支持自定义的测试例扩展和自定义协议开发,为不断演进的网络在组网...     

基于PPI通讯协议的监控模块的设计与实现

介绍了西门子公司PPI通讯协议的解析方法,并给出协议中部分读写指令的具体格式。在此基础上介绍了自行设计的基于MCS-51单片机的监控模块,该模块以解析的PPI协议中相关读写命令为通讯协议,实现对S7-200系列PLC中相关单元的读写。最后,给出了监控模块的硬件构架和软件设计思想。实践证明该模块运行稳定、操作方便、实用性强。     

TDD-LTE网络SGs接口解码方案研究

以TD-LTE网络信令反查系统为研究背景,分析了SGs接口功能及SGs AP协议特点,在此基础上提出了一种符合常规测试规范的SGs AP协议解码模块的设计方案。此方案重点研究利用方法封装、插件式设计思想实现SGs AP协议的简单解码和详细解码等功能。结合现网数据,在TD-LTE网络信令反查系统中测试验证该方案。测试结果表明,解码准确有效,这为实现TD-LTE网络监测系统SGs接口监测提供了重要依据。     

基于GPPSDR的LTE系统RLC协议层实现研究

文章基于通用处理器（GPP）和Windows操作系统,研究了LTE系统RLC协议层的软件无线电（SDR）实现,设计了适合通用处理器架构的高效内存管理模块和格式解析模块。这些核心模块显著减少了内存处理,提供了高自由度的可复用能力,能够有效地简化实现算法,提高系统运行效率。     

LTE网络中业务识别方案的研究与实现

为了实现对长期演进(Long Term Evolution,LTE)网络的业务识别,分析了S1接口用户面协议栈,利用模块化设计思想实现了对S1接口流量的业务识别。针对传统业务识别系统识别度低、统计能力不强的缺陷,在传统的业务识别系统基础上,提出了一个多识别的业务识别方案,实现了对业务类型的精确识别。经过现网数据测试验证,所设计的多识别的业务识别方案达到了预期的效果,在LTE移动通信网络业务识别领域具有推广意义。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.