Novel densely packed laser diode array

A new GaAs/AlGaAs linear diode laser array with a packing density approaching 90% has been fabricated using chemically assisted ion beam etching. Results are presented for arrays which exhibit single-ended optically coated external quantum efficiencies of 71% and a maximum output power of 23 W (quasi-CW) from a 1 mm aperture.<>     

腔面低反射大功率半导体激光器阵列

光束质量问题是制约半导体激光器应用的主要因素,采用出光面蒸镀低反膜LD阵列半导体激光器阵列锁相技术较好地解决了这个问题.本文设计并制作了高反膜系和极低反膜系,获得了高阈值的LD阵列.本文的低反膜系有大的带宽和小于0.2%的剩余反射率,易于工艺实现,LD阵列的阈值电流密度达到480A/cm2.     

High-power AlGaInP three-ridge type laser diode array

A three ridge type GaInP/AlGaInP visible light emitting laser diode array grown by AP-OMVPE has been achieved. A pulsed maximum output power of 108 mW is obtained from this laser array without the use of facet coatings. The pulsed threshold current is 290 mA and the external differential efficiency is 0.75 W/A     

100 W 671 nm visible laser diode array

A GaInP/AlGaInP, strained-layer, single quantum well, monolithic laser diode array is described which has achieved a room temperature quasi-CW (100 mu s, 10 Hz) output of over 100 W at 671 nm.<>     

High-brightness, high-efficiency, single-quantum-well laser diode array

Single-quantum-well, separate-confinement double-heterostructure laser diode arrays which exhibit a high power conversion efficiency of greater than 54% have been demonstrated. The high efficiency results from a low internal loss of 3cm1 and high internal conversion efficiency. The maximum output power for a 100?m emitting aperture is 2 W CW and is independent of the cavity length.     

半导体激光泵浦固体激光器的增益开关效应

用功率大于100mW的二极管激光器列阵泵浦Nd:YAG固体激光器,实现了DPL的增益开关作用。研究了增益开关的动态特性,得到峰值功率大于80mW的1.06μm激光输出,与计算结果一致。提出了三阶梯泵浦的高增益开关新方法,得到峰值功率大于150mW、脉冲宽度小于0.2μs的固体激光输出。     

11.5 W pulsed operation of antiguided laser diode array

A 40-stripe array of antiguided laser diodes is operated to a pulsed output power of 11.5 W. At the output power of 11.5 W, the full width at half maximum of the central lobe of the in-phase far fields is 1 degrees .<>     

Low-temperature electroluminescence from an ordered nanopore array diode laser

We report the first study of spontaneous emission from an ordered nanopore array diode laser at 77 K. The presence of gaps in the spontaneous emission spectrum supports the theoretically predicted formation of a subband structure in the valence and conduction bands.     

Frequency modulation characteristics of coupled stripe laser diode array

Time-dependent changes in the cavity resonance frequency were measured in a ten-element gain-guided coupled stripe array using a new technique based on injection locking. Sensitivity of the frequency to changes in the array current was 0.7 GHz/mA at dc and 0.04 GHz/mA for 1.0 MHz sine-wave modulation. The current-to-frequency modulation transfer function for the array was determined, and it was concluded that the transition from thermal to carrier-induced frequency modulation occurs in the region between 10⁵and 10⁶Hz.     

Multiple laser diode array pumped Cs laser with 48W output power

A Cs vapour laser that utilises four laser diode arrays for longitudinal pumping of the gain medium is demonstrated. A maximum output power of 48 W was achieved with a total optical to optical efficiency of 49% and a slope efficiency of 52%. This work shows that the diode pumped alkali lasers can be scaled to higher powers.     

Collimating diode laser beams from a large-area VCSEL-array usingmicrolens array

In this letter, we demonstrate the fabrication and bonding of a 1 cm×1 cm monolithic two dimensional (2D) vertical-cavity surface-emitting laser (VCSEL) array. We coupled the array to a matched microlens array to individually collimate light from each laser. We found the beam divergence of the collimated array to be 1.6° (1/e2) for the entire array. Using a 1-cm diameter F2 lens, we were able to focus the collimated beams to a spot of 400 μm in diameter and to couple more than 75% of the array power into a 1-mm core fiber. Our results show that it is possible to uniformly bond large area VCSEL arrays to heat sinks, and to collimate light from each element into parallel beams using a single 2-D microlens array. Our results also show that the brightness of the focused beam can be further increased with a lens to near 10⁵-W/cm² Steradian, a level that is useful for many high-power applications     

提高二极管激光阵列外腔锁相效率的实验研究

采用1/4 Talbot外腔实现宽条二极管激光阵列的锁相,在工作电流是35 A时,获得7.56 W的锁相输出功率,输出光束的远场图像是多瓣结构,锁相前后输出光的光谱宽度从2.0 nm压缩到0.2 nm。腔内插入焦距大约为5倍腔长的柱透镜,在相同电流下获得8.75 W的锁相输出功率,输出光的远场图像是多瓣结构,输出超模的数目有所减少,能量向中部集中,输出光的光谱宽度是0.2 nm。     

Ultra-precision machining of reflector array for laser diode beam shaping

Ultra-precision machining is an effective approach to achieve high dimension accuracy and surface finish required in optical and laser components. An extensive study using a two-axis diamond turning machine is conducted to machine the reflector arrays used for laser diode beam shaping. To position the workpiece precisely, theoretical analysis is made so that the dimensional accuracy can be achieved. Investigations into machining burr reduction are carried out. With the process developed, reflectors with optical surface finish of 8 nm in Ra and minimized burr size of less than 0.5 μm have been achieved.     

二极管激光阵列在Talbot外腔锁相中的超模分析

采用数值计算的方法,对二极管激光阵列在Talbot腔、1/2Talbot腔和1/4Talbot腔中锁相时,同相模和异相模的分布进行了计算。结果表明:同相模在Talbot腔中成像位置没改变,在1/2Talbot腔中成像的位置有d/2的偏移,成像均没有产生相移;在1/4Talbot腔中同相模的分布是两组Talbot像的相干叠加,一组成像位置没有改变,产生-π/4的相移,另一组成像位置有d/2的偏移,产生π/4的相移。异相模在Talbot腔和1/2Talbot腔中成像位置均没有改变,在Talbot腔中异相模产生-π/2的相移,而在1/2Talbot腔中产生-π/4的相移;在1/4Talbot腔中异相模也是两组Talbot像的相干叠加,一组成像位置向左偏移d/4 ,一组向右偏移d/4 ,均产生-π/8的相移。所得结果给出了二级管激光阵列在Talbot外腔中同相模和异相模的分布规律。     

半导体激光阵列光谱压窄及光束整形技术研究

采用体布拉格光栅外腔和阶梯镜实现了半导体激光阵列光谱压窄、波长稳定及光束整形。在工作电流为15 A时,输出激光波长锁定在807.7 nm,且不随水冷温度漂移。光谱宽度由自由运转的3.0 nm减小到0.23 nm,且不随注入电流的增加发生明显变化。阶梯镜光束整形和聚焦后,耦合进芯径为600 μm,数值孔径为0.22的光纤,耦合效率为88.6%。     

11.5-W CW 1.83-μm diode laser array

We demonstrate high-power operation of both individual broad-waveguide separate-confinement-heterostructure quantum-well InGaAsP-InP laser diodes and 1-cm-wide arrays emitting at 1.83 μm. Despite strong dependence of threshold current density and diode efficiency on operating temperature, a continuous-wave output power of 2.1 W has been obtained for 100-μm-aperture lasers with 2-mm-long cavities. An output power of 11.5 W was reached for ten element 1-cm-wide array at a heatsink temperature of 16°C     

Picosecond optical pulse generation from mode-locked phased laser diode array

Actively mode-locked 26 ps optical pulses are generated from a gain-guided, 10-stripe, phased laser GaAs diode array with an external cavity consisting of two cylindrical lenses and a corner reflector. To our knowledge, this is the shortest pulse width yet demonstrated from a mode-locked phased laser diode array. The detuning bandwidth of the mode-locking is measured as 2.5 MHz.<>     

High power, high-efficiency 770 nm 2D laser diode array

A two-dimensional (2D) AlGaAs laser diode array is described which operates at a power density of 2 kW/cm², with an overall efficiency of 35% and a slope efficiency of 56%. The wavelength of operation is 770 nm     

半导体激光器阵列耦合系统透镜导管的效率研究

为了将透镜导管应用于激光二极管阵列耦合系统,利用镜像法得到了耦合效率与透镜导管参量之间的关系,即透镜导管长度、曲率半径、输出面边长和快轴发散角均影响透镜导管耦合效率;分析了不同尺寸的半导体激光器面阵耦合到不同尺寸的激光棒中的耦合效率.结果表明,半导体激光器阵列及激光棒的尺寸对耦合效率有一定影响.所得结论为透镜导管的设计...     

1 kW peak power 808 nm 2-D laser diode array

A 2-D laser array delivering a peak power of 1 kW, with an overall efficiency of 33.4% is described. The operating parameters of this array are a 100- mu s pulse width, a 15-Hz reception rate, a temperature of 16 degrees C, and at the nominal wavelengths of 808 nm. The spectrometer used in the system is an ISA model HR-320 monochromator. In conjunction with the PAR mode 1453 1024-element array, a resolution of 0.6 nm/element is achieved which allows a 61 nm range to be displayed at any one time.<>