Deposition of Sm2O3 doped CeO2 thin films from Ce(DPM)4 and Sm(DPM)3 (DPM=2,2,6,6-tetramethyl-3,5-heptanedionato) by aerosol-assisted metal–organic chemical vapor deposition

Samarium-doped ceria (SDC) thin films were prepared from Sm(DPM)₃ (DPM = 2,2,6,6-tetramethyl-3,5-heptanedionato) and Ce(DPM)₄ using the aerosol-assisted metal–organic chemical vapor deposition method. -Al₂O₃ and NiO-YSZ (YSZ = Y₂O₃-stabilized ZrO₂) disks were chosen as substrates in order to investigate the difference in the growth process on the two substrates. Single cubic structure could be obtained on either -Al₂O₃ or NiO-YSZ substrates at deposition temperatures above 450 °C; the similar structure between YSZ and SDC results in matching growth compared with the deposition on -Al₂O₃ substrate. A typical columnar structure could be obtained at 650 °C on -Al₂O₃ substrate and a more uniform surface was produced on NiO-YSZ substrate at 500 °C. The composition of SDC film deposited at 450 °C is close to that of precursor solution (Sm : Ce = 1 : 4), higher or lower deposition temperature will both lead to sharp deviation from this elemental ratio. The different thermal properties of Sm(DPM)₃ and Ce(DPM)₄ may be the key reason for the variation in composition with the increase of deposition temperature.     

Low temperature metal oxide film deposition and reaction kinetics in supercritical carbon dioxide

An effective method is developed for low temperature metal oxide deposition through thermal decomposition of metal diketonates in supercritical carbon dioxide (scCO₂) solvent. The rates of Al(acac)₃ (Aluminum acetyl acetonate) and Ga(acac)₃ (Gallium acetyl acetonate) thermal decomposition in scCO₂ to form conformal Al₂O₃ and Ga₂O₃ thin films on planar surfaces were investigated. The thermal decomposition reaction of Al(acac)₃ and Ga(acac)₃ was found to be initialized at  150 °C and 160 °C respectively in scCO₂ solvent, compared to  250 °C and 360 °C in analogous vacuum-based processes. By measuring the temperature dependence of the growth rates of metal oxide thin films, the apparent activation energy for the thermal decomposition of Al(acac)₃ in scCO₂ is found to be 68 ± 6 kJ/mol, in comparison with 80–100 kJ/mol observed for the corresponding vacuum-based thermal decomposition reaction. The enhanced thermal decomposition rate in scCO₂ is ascribed to the high density solvent which effectively reduces the energy of the polar transition states in the reaction pathway. Preliminary results of thin film deposition of other metal oxides including ZrO_x, FeO_x, Co₂O₃, Cr₂O₃, HfO_x from thermal decomposition of metal diketonates or fluorinated diketonates in scCO₂ are also presented.     

Chemical vapour deposition of praseodymium oxide films on silicon: influence of temperature and oxygen pressure

Metal-organic chemical vapour deposition (MOCVD) of various phases in PrO_x system has been studied in relation with deposition temperature (450–750 °C) and oxygen partial pressure (0.027–100 Pa or 0.2–750 mTorr). Depositions were carried out by pulsed liquid injection MOCVD using Pr(thd)₃ (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) precursor dissolved in toluene or monoglyme. By varying deposition temperature and oxygen partial pressure amorphous films or various crystalline PrO_x phases (Pr₂O₃, Pr₇O₁₂, Pr₆O₁₁) and their mixtures can be grown. The pure crystalline Pr₂O₃ phase grows only in a narrow range of partial oxygen pressure and temperature, while high oxygen pressure (40–100 Pa) always leads to the most stable Pr₆O₁₁ phase. The influence of annealing under vacuum at 750 °C on film phase composition was also studied. Near 90% step coverage conformity was achieved for PrO_x films on structured silicon substrates with aspect ratio 1:10. In air degradation of Pr₂O₃ films with transformation to Pr(OH)₃ was observed in contrast to Pr₆O₁₁ films.     

Synthesis and sintering of hydroxyapatite–zirconia composites

Hydroxyapatite (HA) has been synthesised in presence of 10–30 wt.% of m-ZrO₂ by solid state reaction between tricalcium phosphate (TCP) and Ca(OH)₂ at 1000 °C for 8 h. The m-ZrO₂ was partly converted into t-ZrO₂ by partial consumption of CaO which in turn resulted in a mixture of β-TCP and HA. On sintering these HA–β-TCP–ZrO₂ composite powders at 1100–1400 °C for 2 h, the HA is further decomposed into β-TCP and CaO. The CaO so produced reacts further with m-ZrO₂/t-ZrO₂ generating a mixture of t-ZrO₂ and CaZrO₃ in different proportions. These various phases formed interfere with the sinterability of the composites due to their differential shrinkages leading to a overall reduced density as compared to that of pure HA. The composites show a T-onset of decomposition at around 1150 °C and a 40% HA yield was obtained at the highest sintering temperature of 1400 °C. The products were subjected to XRD for phase analysis and the microstructural features were studied by SEM.     

Chemical vapor deposition of copper–cobalt binary films

Chemical vapor co-deposition of Cu–Co films has been demonstrated using (1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)Cu(II) [Cu(hfac)₂] [hfac=hexafluoroacetylacetonate] and (acetylacetonate)Co(II) [Co(acac)₂] [acac=acetylacetonate] as precursors. The deposition was performed at the substrate temperature of 270°C in a warm-wall impinging jet type reactor. The precursor Co(acac)₂ was sublimed at 140°C to achieve reasonable precursor delivery rates and avoid decomposition of precursor in the sublimator. Films with varying Cu content from 17 wt.% to 98 wt.% were deposited by subliming Cu(hfac)₂ in the temperature range of 40–100°C with a fixed Co(acac)₂ delivery rate. The morphologies and crystallinities of the binary films were strongly dependent on the film stoichiometry. Overall, this study provides insights into the mechanism of Cu–Co binary film formation by CVD.     

Direct liquid injection metal-organic chemical vapor deposition of HfO2 thin films using Hf(dimethylaminoethoxide)4

Hf(OCH₂CH₂NMe₂)₄, [Hf(dmae)₄] (dmae=dimethylaminoethoxide) was synthesized and used as a chemical vapor deposition precursor for depositing Hf oxide (HfO₂). Hf(dmae)₄ is a liquid at room temperature and has a moderate vapor pressure (4.5 Torr at 80 °C). It was found that HfO₂ film could be deposited as low as 150 °C with carbon level not detected by X-ray photoelectron spectroscopy. As deposited film was amorphous but when the deposition temperature was raised to 400 °C, X-ray diffraction pattern showed that the film was polycrystalline with weak peak of monoclinic (020). Scanning electron microscope analysis indicated that the grain size was not significantly changed with the increase of the annealing temperature. Capacitance–voltage measurement showed that with the increase of annealing temperature, the effective dielectric constant was increased, but above 900 °C, the effective dielectric constant was decreased due to the formation of interface oxide. For 500 Å thin film, the dielectric constant of HfO₂ film annealed at 800 °C was 20.1 and the current–voltage measurements showed that the leakage current density of the HfO₂ thin film annealed at 800 °C was 2.2×10⁻⁶ A/cm² at 5 V.     

Langmuir–Blodgett films of substituted bis(naphthalocyaninato) rare earth complexes: structure and interaction with nitrogen dioxide

Ordered molecular assemblies of novel alkylthio-substituted bis(naphthalocyaninato) rare earth complexes M[2,3-Nc(SC₁₂H₂₅)₈]₂ (M=Gd, Er) have been fabricated by Langmuir–Blodgett (LB) technique and characterized by surface pressure-area isotherm measurements, electronic absorption and polarized electronic absorption spectroscopy and low-angle X-ray diffractometry. The interaction between the thin films and NO₂ gas was investigated. The experimental results indicate that the bis(naphthalocyaninato) rare earth molecules form well-ordered stable monolayers with face-to-face orientation for the macrocycles and edge-on configuration for the molecules at the air–water interface and lamellar multilayers on solid substrates. The orientation angles of naphthalocyanine rings with respect to the quartz plate surface in the LB films for M[2,3-Nc(SC₁₂H₂₅)₈]₂ with M of Gd and Er have been determined based on the polarized absorbance and found to be 50° and 54°, respectively. The adsorption–desorption process of NO₂ on LB films of M[2,3-Nc(SC₁₂H₂₅)₈]₂ has been monitored by electronic absorption spectroscopy. A process of gas desorption was found to obey the Elovich equation.     

Catalytic CVD growth of Si–C and Si–C–O alloy films by using alkylsilane and related compounds

Cat-CVD method has been applied to the growth of Si–C and Si–C–O alloy thin films. Growth mechanism has been studied with emphasis on the effects of filament materials. Growth rates and alloy compositions were measured for W, Ta, Mo and Pt filaments at the filament temperatures ranging from 1300 to 2000 °C. Si_1−xC_x films with x ranging from 0.38 to 0.7 could be grown by using single molecule source Si(CH₃)₂H₂ (dimethylsilane). Si–C–O ternary alloy films was successfully prepared by using Si(OC₂H₅)₄ (tetraethoxysilane) and Si(CH₃)₂(OCH₃)₂ (dimethyldimethoxysilane) molecules.     

Addition of Urea or Biuret on Synthesis of Rhabdophane-Type Neodymium and Cerium Phosphates

Urea or biuret was added to the thermal synthetic system of Rhabdophane-type neodymium and cerium phosphates. The mixture of a rare earth compound, a phosphorus compound, and an additive [CO(NH₂)₂ or NH(CONH₂)₂] was heated at 150°C or 300°C for 20 hr, and the thermal products were analyzed by the XRD, FT-IR, and BET methods. H₃PO₄ and (NH₄)₂HPO₄ were used for phosphorus compounds, and for rare earth compounds, Nd₂O₃, Nd(NO₃)₃ · 6H₂O, NdCl₃ · 6H₂O, Nd₂(CO₃)₃ · 8H₂O, CeO₂, Ce(NO₃)₃ · 6H₂O, CeCl₃ · 7H₂O, and Ce₂(CO₃)₃ · 8H₂O were used. Urea and biuret worked not only as a dispersing agent but also as a reactant. By the addition of biuret, the thermal products changed from cerium oxide to Rhabdophane-type cerium phosphate in the system using CeCl₃ · 7H₂O and (NH₄)₂HPO₄. Addition of urea or biuret influenced the specific surface area of Rhabdophane-type neodymium and cerium phosphates. Furthermore, to increase the reactivity of the raw solid materials, mechanical treatment was performed. The mixture of diammonium hydrogenphosphate and a rare earth compound was ground with water and then heated. The influence of the addition of urea or biuret was also studied in these systems.     

一步法合成磷掺杂石墨相氮化碳及其光催化性能

以尿素(CO(NH₂)₂)和磷酸氢二铵((NH₄)₂HPO₄)作为原料, 通过热聚合法制备了磷(P)掺杂石墨相氮化碳(g-C₃N₄)材料(P-CN)。通过X射线衍射、红外光谱、X射线光电子谱、扫描电子显微镜、透射电子显微镜、紫外可见漫反射光谱和N₂吸附-脱附对样品进行了表面形貌及结构表征, 通过对罗丹明B(RhB)的降解实验, 研究了样品的可见光催化性能, 对其催化机理进行了分析。结果表明, 合成过程中磷原子的掺杂会取代g-C₃N₄中的C原子, 从而改变g-C₃N₄的表面形貌和电子结构。在可见光条件下, P-CN材料表现出优异的光催化性能, 其对RhB的降解速率明显优于纯氮化碳。其中3%P-CN样品催化活性最高, 反应30 min时, RhB降解率达到96.8%。分析认为, P原子对g-C₃N₄中的C原子的取代使P-CN样品表面处于富电子状态, 并导致P-CN样品导带位置升高, 光电子还原性增强。这些电子与水中的溶解氧形成超氧自由基(·O₂^-), 从而使得光催化性能显著提高。     

Sintering of Fused Mullite Based Particulate Composites Containing Zirconia

2r0₂ and its modified versions containing MgO and Y₂0₃ were selected as particulate reinforcement in order to achieve better mechanical properties in fused mullite. Particulate composites containing up to 25 vol% Zr0₂ and its modifications were pressed to 65% relative density at 350 MPa followed by sintering at 1650°C and 1700°C for one hour. Studies were conducted on fracture toughness, transverse rupture strength, dielectric constant, microstructure, fractography and thermal shock resistance. Composites sintered at 1700°C were found superior in properties than those sintered at 1650°C.     

An investigation of graphite PEEK composite under compression with a centrally located circular discontinuity

The failure characteristic of graphite polyetheretherketone (Gr/PEEK) under compression with a centrally located circular discontinuity was investigated through experimentation and a nonlinear ply-by-ply finite element technique. The stacking sequence of the laminates investigated were: [0 °₁₆], [90 °₁₆], [±45 °]_4S [0 °/90 °]_4S, and [0 °/ ± 45 0°/90 °]_2S. In the experimentation, [90 °]₁₆, [0 °/90 °]_4S, and [0 °/ ±45 °/90 °]_2S laminates, as well as three of the [0 °]₁₆, failed due to a crack that was normal to the loading direction and initiated from the edge of the hole progressing to the outer edges of the specimen. The [±45 °]_4S specimens failed to support the load due to an internal crack that originated from the hole's edge and then traveled at an angle of about 42% to the direction of loading. The finite element method used to analytically model the failure of Gr/PEEK accurately modeled the response of the specimens tested experimentally.     

Effects of Co and Ni addition on reactive diffusion between Sn–3.5Ag solder and Cu during soldering and annealing

The reactive diffusion between Sn–Ag solders and Cu was experimentally examined during soldering and isothermal annealing. Three sorts of solders with compositions of Sn–3.5Ag, Sn–3.5Ag–0.1Ni and Sn–3.5Ag–0.1Co were used for the experiment. Each solder was soldered on a Cu plate at 523 K (250 °C) for 1–60 s in a pure nitrogen gas, and then the solder/Cu diffusion couple was isothermally annealed at 423 K (150 °C) for 168–1008 h. Due to soldering, only Cu₆Sn₅ is formed at the interface in each diffusion couple. On the other hand, Cu₃Sn is produced between Cu₆Sn₅ and Cu owing to the isothermal annealing. The composition of Cu₆Sn₅ is (Cu_0.8Ni_0.2)₆Sn₅ and (Cu_0.93Ni_0.07)₆Sn₅ on the solder and Cu₃Sn sides, respectively, in the (Sn–3.5Ag–0.1Ni)/Cu diffusion couple, and it is (Cu_0.9Co_0.1)₆Sn₅ and (Cu_0.99Co_0.01)₆Sn₅ on the solder and Cu₃Sn sides, respectively, in the (Sn–3.5Ag–0.1Co)/Cu diffusion couple. Different rate-controlling processes were suggested for the (Sn–3.5Ag)/Cu, (Sn–3.5Ag–0.1Ni)/Cu and (Sn–3.5Ag–0.1Co)/Cu diffusion couples. Finally, thermodynamic models were herein adopted to explore influences of the additives on the thermodynamic interaction of the component elements and the driving force for the growth of intermetallics.     

Spectral Properties of Single Crystals of the 2:1 Product of C60 and Tetrathiotetracene

Reaction of C₆₀ with tetrathiotetracene (TTT) gives an adduct of formula (C₆₀)₂ · TTT · 0.5CS₂. The single crystals and powdered samples of the TTT and (C₆₀)₂ · TTT · 0.5CS₂ have been spectroscopically characterized. It was shown that the transmission spectra of the adduct contain not only the IR active modes of the components but also numerous features arising from isotopic or solid-state effects due to the symmetry breaking of the C₆₀ molecules.     

Characterization of the thorium phosphate-hydrogenphosphate hydrate (TPHPH) and study of its transformation into the thorium phosphate-diphosphate (β-TPD)

The preparation of thorium phosphate-diphosphate (Th₄(PO₄)₄P₂O₇, TPD) was developed through the precipitation of thorium phosphate-hydrogenphosphate hydrate (Th₂(PO₄)₂(HPO₄)·H₂O, TPHPH) at 150–160 °C in closed PTFE container or in autoclaves. From EPMA analyses and SEM observations, the initial precipitate was single phase and multilayered. The behaviour of TPHPH (orthorhombic system with a = 21.368(2) Å, b = 6.695(1) Å and c = 7.023(1) Å) was followed when heating up to 1250 °C. It was first dehydrated leading to the anhydrous thorium phosphate-hydrogenphosphate (TPHP, orthorhombic system with a = 21.229(2) Å, b = 6.661(1) Å and c = 7.031(1) Å at 220 °C) after heating between 180 and 200 °C. This one turned progressively into the new low-temperature variety of TPD (called -TPD, orthorhombic system with a = 21.206(2) Å, b = 6.657(1) Å and c = 7.057(1) Å at 300 °C) correlatively to the condensation of hydrogenphosphate groups into diphosphate entities. These three phases (TPHPH, TPHP and -TPD) exhibit closely related 2D layered structures, therefore different from the 3D structure of the thorium phosphate-diphosphate (high-temperature variety). This latter compound, now called β-TPD, was obtained by heating -TPD above 950 °C. All the techniques involved in this study (XRD, Raman and IR spectroscopy, ¹H and ³¹P NMR) confirmed the successive chemical reactions proposed.     

Preparation of uniform titania nanocoating on ZnS-based phosphors by a sol–gel process

A sol–gel process has been developed to coat micron-sized ZnS:Cu,Au,Al phosphors with a smooth and uniform layer of amorphous titania having nanosize thickness. The titania nanocoating is based on the hydrolysis and condensation of titanium tetrabutoxide Ti(OBu)₄. Acetylacetone was used to decrease the reactivity of Ti(OBu)₄. The experimental variables such as water concentration, the amount of ZnS particles, and reaction time were investigated. The thickness of the titania nanocoating was homogeneous and can easily be controlled from 20 to 54 nm by adjusting the experimental variables. The as-prepared titania nanocoating was amorphous phase and could be crystallized to anatase phase upon heating at 500 °C in Ar atmosphere.     

Thaumasite––direct, woodfordite and other possible formation routes

Two main formation routes for thaumasite exist below 15 °C. One is the direct route from C–S–H reacting with appropriate carbonate, sulfate, Ca²⁺ ions and excess water. The other route is the woodfordite route from ettringite reacting with C–S–H, carbonate, Ca²⁺ ions and excess water, in which thaumasite arises through the intermediate formation of the solid solution woodfordite. The woodfordite route for thaumasite formation appears to be relatively quicker (although still slow) than the direct route, presumably because with the former the ettringite already has the octahedral [M(OH)₆] units that can facilitate the critical change from [Al(OH)₆]³⁻ to [Si(OH)₆]²⁻ groupings. Both routes are mutually dependent on each other. The presence of magnesium salts can modify the path to thaumasite formation. High pressure might be able to stabilise [Si(OH)₆]²⁻ groupings and allow thaumasite to become formed above 15 °C. This possibility is discussed.     

Formation of Transparent and Photo Conducting Films by High Temperature Chemical Conversion of Solution Grown Precursor Films

The formation of photoconducting ZnO and transparent conducting CdO films by high temperature oxidation and thermal decomposition of chemically deposited ZnS and Cd(OH)₂ precursor films respectively is reported. The ZnS to ZnO and Cd(OH)₂ to CdO conversions were confirmed by x-ray diffraction (XRD)₂ electrical and optoelectronic studies. As deposited ZnS and Cd(OH)₂ films exhibited very low dark conductivity and no photoconductivity. Air oxidation of ZnS films at about 400°C for at least 15 minutes converted them to ZnO films with higher dark and photoconductivity. Cd(OH)₂ to CdO conversion occurred at about 300°C. CdO films exhibited a dark conductivity of the order of 10³ (Ωcm)^-1 and an optical transmittance in the range of 90%. These characteristics of ZnO and CdO films make them suitable candidates for the development of low cost photoconductors and solar cell structures.     

Sol–gel deposition and characterization of Mn-doped silicate phosphor films

Mn²⁺-doped Zn₂SiO₄ and Mg₂Gd₈(SiO₄)₆O₂ phosphor films were deposited on silicon and quartz glass substrates by sol–gel process (dip-coating). The variations of sol viscosity with time and film thickness with the number of layers were investigated in Zn₂SiO₄: Mn system. The results of XRD and IR showed that the Zn₂SiO₄: Mn films remained amorphous below 700°C and crystallized completely around 1000°C. From AFM studies, it was observed that the grains with 0.5–0.8 μm size packed closely in Zn₂SiO₄: Mn films, which were uniform and crack free. The luminescence properties of Zn₂SiO₄: Mn films were characterized by absorption, excitation and emission spectra as well as luminescence decay. These properties were discussed in detail by a comparison with those of Mn²⁺ (and Pb²⁺)-doped Mg₂Gd₈(SiO₄)₆O₂ phosphor films.     

Novel soft solution synthesis and characterization of submicromic LiCoVO4

A novel soft solution process has been used to prepare LiCoVO₄ by reacting Co(CH₃CH₂COO)₂, Li₂CO₃, NH₄VO₃ and citric acid. LiCoVO₄ powders were successfully prepared at as low as 450 °C in 4 h. Compared to the solid-state reaction processes, the soft solution process greatly reduced the temperature and the time for preparing LiCoVO₄. The inverse spinel structure and high crystallinity of the synthesized product has been confirmed by X-ray diffraction. Thermal analysis proves that the phase formation of the compound occurs at about 450 °C. The results of the IR investigations show that the band located at 820 cm⁻¹ corresponds to the stretching vibration mode of VO₄ tetrahedron with the A symmetry. SEM examination reveals a spherical grain distribution, the average particle size being typically lower than 1 μm. The quantitative result from ICP-AES analysis is Li_0.967Co_0.994VO₄.