ZnO/ZnS核/壳纳米结构的形态及其演变模式

用两步生长的方法在醋酸锌和六亚甲基四胺水溶液中生长ZnO纳米棒阵列,然后以ZnO纳米棒阵列为模板,在Na2S水溶液中硫化0.5～6 h形成ZnO/ZnS纳米结构.用XRD,SEM和TEM表征了ZnO/ZnS核/壳纳米结构的晶体结构、表面形貌.研究了ZnO/ZnS核/壳纳米结构的形态及其转变的模式.在硫化过程中,ZnO首先形成ZnO/ZnS核/壳纳米棒,随着硫化程度的增强,核/壳结构顶部出现空洞,空洞扩展形成管状结构,进一步硫化,管状结构坍塌.硫化形成的ZnO/ZnS结构的形态不仅依赖于初始纳米棒的直径大小和硫化时间的长短,还依赖于纳米棒的分布密度.     

台湾科学家研制出氧化锌白光LED前景光明

台湾的科学家最近以氧化锌（ZnO）／蓝光有机材料复合薄膜,制作出白光发光二极管（LED）。他们利用水热法成功地在蓝光有机发光薄膜上生长无机ZnO纳米柱阵列。此技术有别于传统LED的外延生长制作方式,不仅方法简单且全程低温．对于未来发展白光光源极具吸引力。     

紫外辐射ZnO纳米棒的生长及性能

用退火法在玻璃、硅片衬底上先生长ZnO籽晶,然后在90℃下在醋酸锌和六亚甲基四胺溶液中生长了直径约为17 nm的ZnO纳米棒.采用X射线衍射仪(XRD)分析了不同衬底上生长的ZnO纳米棒的结构和择优生长取向,用扫描电子显微镜(SEM)观察了ZnO的形态,用荧光光谱仪分析了纳米棒的发光特性,讨论了籽晶、衬底类型和衬底放置方式对纳米棒的尺寸、排列趋向性和光学性能的影响.纳米棒的直径和排列依赖于衬底的初始状态,籽晶可以减小纳米棒的尺寸,增强纳米棒的排列有序性;一旦衬底上生长了籽晶,后续生长的纳米棒的尺寸、排列和性能与衬底的类型无关,纳米棒都具有强的紫光发射.但衬底的放置方式会影响其上纳米棒的形态,竖直放置的衬底易生长尺寸分布均匀的准有序排列的纳米棒.     

用纳米棒ZnO作模板生长无支撑的AlN纳米晶

用金属有机物气相外延在纳米棒ZnO模板上沉积AlN薄膜.SEM测试表明该薄膜形成了一种倾倒纳米棒的表面.而GIXRD测试进一步证实它是纤锌矿结构的AlN,晶粒尺度约为12nm,接近于ZnO纳米棒的直径(30nm).这意味着纳米棒结构的ZnO能限制AlN的横向生长.此外,高温下用H2刻蚀ZnO直接在生长中实现了外延层的剥离.最终得到了无支撑的AlN纳米晶,完整无破损的区域约为1cm×1cm.定义这个生长机制为"生长-刻蚀-合并"过程.     

用纳米棒ZnO作模板生长无支撑的AlN纳米晶

用金属有机物气相外延在纳米棒ZnO模板上沉积AlN薄膜.SEM测试表明该薄膜形成了一种倾倒纳米棒的表面.而GIXRD测试进一步证实它是纤锌矿结构的AlN,晶粒尺度约为12nm,接近于ZnO纳米棒的直径(30nm).这意味着纳米棒结构的ZnO能限制AlN的横向生长.此外,高温下用H2刻蚀ZnO直接在生长中实现了外延层的剥离.最终得到了无支撑的AlN纳米晶,完整无破损的区域约为1cm×1cm.定义这个生长机制为"生长-刻蚀-合并"过程.     

一维ZnO纳米/微米棒的制备及光学性能研究

采用溶胶-凝胶法,以六水硝酸锌和乙二醇单甲醚为主要原料,在SiO2玻璃衬底上旋涂一层致密的ZnO籽晶,用水热法,通过对ZnO籽晶层面朝下和朝上分别制备了ZnO纳米棒和微米棒。研究了不同生长液浓度对ZnO纳米/微米棒的形貌和光学性能的影响。结果表明,ZnO纳米棒直径约在Φ(60~90)nm之间,长度约为1 600nm,微米棒直径约Φ(1~4)μm,长度约8~14μm;随着生长液浓度的增加,ZnO纳米棒越致密,而ZnO微米梭生长成ZnO微米棒;ZnO纳米/微米棒的光致发光(PL)光谱强度随着生长液浓度的增加逐渐增强     

氧化锌纳米结构的制备及其生长机理

将利用射频磁控溅射技术在Si(111)衬底上沉积的锌膜进行热氧化后,得到一维ZnO纳米棒.采用X射线衍射(XRD)、扫描电子显微镜(SEM)、透射电镜(TEM)研究了ZnO纳米棒的结构及表面形貌.实验结果表明上述ZnO纳米棒具有六角纤锌矿结构.金属Zn从SiO2基质中析出和O2发生反应在薄膜表面形成低维ZnO纳米棒.讨论了退火温度及退火时间对ZnO纳米棒形成的影响,并对其生长机制作了初步的探讨.     

籽晶层退火温度对ZnO纳米棒形貌及发光特性的影响

以不同退火温度处理后的ZnO籽晶层为基底,采用水热法生长了ZnO纳米棒阵列。对制备得到的ZnO纳米棒阵列的形貌、结构以及发光特性进行了表征,分析了籽晶层的退火温度对ZnO纳米棒阵列的形貌及发光性质的影响,发现通过调节籽晶层的退火温度,可以控制ZnO纳米棒的大小及密度,并发现在经400℃退火后的籽晶层上生长的ZnO纳米棒阵列形貌最佳,发光性能最优。     

籽晶层热处理温度对ZnO纳米棒阵列性能的影响

以不同热处理温度下制备的ZnO籽晶层为基底,采用水热法生长ZnO纳米棒阵列,对制备得到的ZnO纳米棒阵列的相结构和微观形貌以及发光特性进行了表征,分析了籽晶层热处理温度对ZnO纳米棒阵列性能的影响机理,发现在籽晶层热处理温度为450℃时,生长得到的ZnO纳米棒阵列空间取向最优,发光性能最好。     

ZnO纳米棒的低温生长及光致发光性能

采用化学溶液沉积法在ITO导电玻璃上制备近一维ZnO纳米棒.利用X射线衍射(XRD)、扫描电子显微镜(SEM)和光致发光谱(PL)对样品进行表征,研究了不同Zn2+摩尔浓度和不同生长时间对样品的结构、形貌和光致发光性能的影响.结果表明,所制备的ZnO纳米棒为纤锌矿结构并沿c轴择优取向生长.另外,随着Zn2+摩尔浓度的增加,纳米棒的直径增大.当Zn2+摩尔浓度为0.1M时,ZnO纳米棒的直径和长度都随生长时间的增加而增加.PL测试表明,样品均具有良好的发光性能,并且ZnO纳米棒的结晶质量随着Zn2+摩尔浓度和生长时间的增加均有所提高.     

Bicolor Light-Emitting Diode Based on Zinc Oxide Nanorod Arrays and Poly(2-methoxy,5-octoxy)-1,4-phenylenevinylene

The current study reports a novel inorganic/organic light-emitting diode (LED), consisting of zinc oxide (ZnO) nanorod arrays and poly(2-methoxy, 5-octoxy)-1,4-phenylenevinylene (MOPPV). ZnO nanorod arrays passivated using polyacrylamide (PAM) with 70 nm diameter were successfully prepared by a simple polymer-assisted chemical method. Enhancement of the ZnO defect emission is caused by PAM passivation, as observed in photoluminescence spectra. Infrared absorption spectra reveal that PAM is chemically or physically adsorbed on the surfaces of ZnO nanorod arrays. The electroluminescence (EL) spectrum shows bluish light at 406 nm from ZnO transition emission, and light emission with center at 600 nm from exciton emission in MOPPV. The potential EL mechanism is electron transition to zinc vacancy in PAM/ZnO nanorod arrays, and exciton radiation luminescence in MOPPV film. This novel PAM/ZnO-MOPPV device may be helpful to promote development of multicolor LEDs.     

Improved light extraction efficiency and leakage characteristics in light-emitting diodes by nanorod arrays formed on hexagonal pits

We report the enhancement of light extraction efficiency (LEE) and electrical performance in GaN-based green light-emitting diodes (LEDs) using ZnO nanorods formed on the etched surface of p-GaN. Green LEDs with hybrid ZnO nanorod structures grown on the hexagonally etched topmost layer of the LEDs, show an improvement in electroluminescence intensity that is 3.5 times higher than LEDs without any other surface treatments. The improvement in LEE in LEDs with nanohybrid structures was confirmed by finite-difference time-domain simulation analysis. Besides LEE enhancement, the surface etching effects on the reduction of leakage current of fabricated LEDs were also investigated.     

Improved light extraction in AlGaInP-based LEDs using a self-assembly metal nanomask

This paper reports a new method of fabricating AIGaInP-based nanorod light emitting diodes (LEDs) by using self-assembly metal layer nanomasks and inductively coupled plasma.Light-power measurements indicate that the scattering of photons considerably enhances the probability of escaping from the nanorod LEDs.The light-intensity of the nanorod LED is increased by 34% for a thin GaP window layer,and by 17% for an 8μm GaP window layer.The light-power of the nanorod LED is increased by 25% and 13%,respectively.     

Nano-Processing Techniques Applied in GaN-Based Light-Emitting Devices With Self-Assembly Ni Nano-Masks

We have developed a simple method to fabricate nanoscale masks by using self-assembly Ni clusters formed through a rapid thermal annealing (RTA) process. The density and dimensions of the Ni nano-masks could be precisely controlled. The nano-masks were successfully applied to GaN-based light-emitting diodes (LEDs) with nano-roughened surface, GaN nanorods, and GaN-based nanorod LEDs to enhance light output power or change structure properties. The GaN-based LED with nano-roughened surface by Ni nano-masks and excimer laser etching has increased 55% light output at 20 mA when compared to that without the nano-roughened process. The GaN nanorods fabricated by the Ni nano-masks and ICP-RIE dry etching showed 3.5 times over the as-grown sample in photoluminescence (PL) intensity. The GaN-based nanorod LEDs assisted by photo-enhanced chemical (PEC) wet oxidation process were also demonstrated. The electroluminescence (EL) intensity of the GaN-based nanorod LED with PEC was about 1.76 times that of the as-grown LED. The fabrication, structure properties, physical features, and the optical and electrical properties of the fabricated devices will be discussed.     

Enhanced output power of (indium) gallium nitride light emitting diodes by a transparent current spreading-film composed of a disordered network of indium tin oxide nanorods

A thin film consisting of a disordered nanorod network of indium tin oxide (ITO) and conventional ITO films are fabricated on gallium nitride (GaN) based-light emitting diodes (LEDs) by electron beam evaporation. The surface morphologies are observed by scanning electron microscopy (SEM). The disordered nanorod network of ITO is grown in vacuum without oxygen. It can be applied directly on the LED as the current spreading film unlike other nanorods which require growth on a conductive layer. The transmittance, current–voltage characteristic, and the dependence of light output power on current are measured for disordered nanorod network ITO LEDs and conventional ITO LEDs, respectively. The measurement results indicate that the nanorod network provides a significant improvement in the light output power of GaN-based LEDs. The influence of the structure of ITO films on the light output power of GaN-based LEDs is discussed.     

Improvement of photon extraction efficiency of InGaN LEDs utilizing textured ZnO layer deposited by electrospray deposition

Improvement of photon extraction efficiency of InGaN LEDs has been achieved by deposition of textured ZnO layers on InGaN LED bare chips utilizing electrospray deposition. The electrical and spectral properties of the InGaN LED remain unchanged after the deposition of ZnO, while the InGaN LED with textured ZnO layer exhibits a wider far-field angular distribution. The optical power of the InGaN LED capped with ZnO layer is ∼30% higher than that without ZnO, which is due to increased photon escape probability as a result of the increased surface roughness.     

Wavelength‐Emission Tuning of ZnO Nanowire‐Based Light‐Emitting Diodes by Cu Doping: Experimental and Computational Insights

The band‐gap engineering of doped ZnO nanowires is of the utmost importance for tunable light‐emitting‐diode (LED) applications. A combined experimental and density‐functional theory (DFT) study of ZnO doping by copper (Zn²⁺ substitution by Cu²⁺) is presented. ZnO:Cu nanowires are epitaxially grown on magnesium‐doped p‐GaN by electrochemical deposition. The heterojunction is integrated into a LED structure. Efficient charge injection and radiative recombination in the Cu‐doped ZnO nanowires are demonstrated. In the devices, the nanowires act as the light emitters. At room temperature, Cu‐doped ZnO LEDs exhibit low‐threshold emission voltage and electroluminescence emission shifted from the ultraviolet to violet–blue spectral region compared to pure ZnO LEDs. The emission wavelength can be tuned by changing the copper content in the ZnO nanoemitters. The shift is explained by DFT calculations with the appearance of copper d states in the ZnO band‐gap and subsequent gap reduction upon doping. The presented data demonstrate the possibility to tune the band‐gap of ZnO nanowire emitters by copper doping for nano‐LEDs.     

Linear Cascade Arrays of GaN-Based Green Light-Emitting Diodes for High-Speed and High-Power Performance

In the following study, we demonstrated linear cascade GaN-based light-emitting-diode (LED) arrays at a wavelength of approximately 520 nm. Experimental LEDs were analyzed with the goal to improve the output power and differential efficiency of a single LED. The study shows that using arrays with up to four LEDs connected in series, we can achieve four times the improvement in output power (differential quantum efficiency) under the same bias current as compared to a single LED apparatus. We have also measured the modulation-speed performance of experimental LEDs, and both devices exhibit similar 3-dB bandwidth (90 MHz) under the same bias currents. Experimental results indicate that the cascade connection offers the advantages of significantly enhanced external differential efficiency and provision of a method to use a constant-voltage power supply. The current crowding problem and resistance-capacitance-limited bandwidth degradation issues in a large active area LED can also be minimized using the connection demonstrated in our experiment.     

Formamide driven synthesis of well-aligned ZnO nanorod arrays on glass substrate

A cost effective, low-temperature approach has been developed for the large-area deposition of ZnO nanorod/nanotube arrays on a ZnO coated glass substrate by the natural oxidation of zinc metal in formamide/water mixtures. The two-step seed deposition and wet-chemical approach exhibited well-controlled growth of highly oriented and densely packed ZnO nanorod/nanotube arrays with large-area homogeneity and uniform morphologies. In order to investigate the quality and alignment of ZnO nanorod arrays grown on the ZnO seed layer coated substrate, three different methods of ZnO coating have been deposited by ultrahigh vacuum evaporation system, DC sputtering and RF sputtering, respectively. Our results showed that the ZnO seed layer grown by RF sputtering resulted in high quality ZnO nanorod arrays.