A 80-MHz bandpass ΔΣ modulator for a 100-MHz IFreceiver

A fully differential fourth-order bandpass ΔΣ modulator is presented. The circuit is targeted for a 100-MHz GSM/WCDMA-multimode IF-receiver and operates at a sampling frequency of 80 MHz. It combines frequency downconversion with analog-to-digital conversion by directly sampling an input signal from an intermediate frequency of 100 MHz to a digital intermediate frequency of 20 MHz. The modulator is based on a double-delay single-op amp switched-capacitor (SC) resonator structure which is well suited for low supply voltages. Furthermore, the center frequency of the topology is insensitive to different component nonidealities. The measured peak signal-to-noise ratio is 80 and 42 dB for 270 kHz (GSM) and 3.84-MHz (WCDMA) bandwidths, respectively. The circuit is implemented with a 0.35-μm CMOS technology and consumes 56 mW from a 3.0-V supply     

A double-sampling pseudo-two-path bandpass ΔΣ modulator

A double-sampling pseudo-two-path bandpass ΔΣ modulator is proposed. This modulator has an output rate equal to twice the clock rate, uses n/2 operational amplifiers (op-amps) for an nth-older noise transfer function, and has reduced clock feedthrough in the signal path band. The required clocks can be simpler to implement than the conventional pseudo-two-path techniques. The measured signal-to-noise ratio and dynamic range of the fourth-order double-sampling pseudo-two-path bandpass ΔΣ modulator in a 30-kHz bandwidth at a center frequency of 2.5 MHz (at a clock frequency of 5 MHz) are 62 and 68 dB, respectively     

IF-sampling fourth-order bandpass /spl Delta//spl Sigma/ modulator for digital receiver applications

Bandpass modulators sampling at high IFs (/spl sim/200 MHz) allow direct sampling of an IF signal, reducing analog hardware, and make it easier to realize completely software-programmable receivers. This paper presents the circuit design of and test results from a continuous-time tunable IF-sampling fourth-order bandpass /spl Delta//spl Sigma/ modulator implemented in InP HBT IC technology for use in a multimode digital receiver application. The bandpass /spl Delta//spl Sigma/ modulator is fabricated in AlInAs-GaInAs heterojunction bipolar technology with a peak unity current gain cutoff frequency (f/sub T/) of 130 GHz and a maximum frequency of oscillation (f/sub MAX/) of 130 GHz. The fourth-order bandpass /spl Delta//spl Sigma/ modulator consists of two bandpass resonators that can be tuned to optimize both wide-band and narrow-band operation. The IF is tunable from 140 to 210 MHz in this /spl Delta//spl Sigma/ modulator for use in multiple platform applications. Operating from /spl plusmn/5-V power supplies, the fabricated fourth-order /spl Delta//spl Sigma/ modulator sampling at 4 GSPS demonstrates stable behavior and achieves a signal-to-(noise + distortion) ratio (SNDR) of 78 dB at 1 MHz BW and 50 dB at 60 MHz BW. The average SNDR performance measured on over 250 parts is 72.5 dB at 1 MHz BW and 47.7 dB at 60 MHz BW.     

A VHF Implementation of a LINC Amplifier

LINC is a technique that uses signal processing to produce Linear amplification of bandpass signals with grossly Nonlinear circuit Components. The important signal processing functions in LINC are forming two constant envelope phase modulated signal components from the bandpass input signal and recombining the amplified components to produce an amplified replica of the input signal. Two- and three-tone laboratory tests of a complete LINC amplifier show that, at full output, spurious levels 40 dB below tone level are achievable for tone spacings of 100 kHz. Because the laboratory model is operated at relatively low frequencies (hundreds of MHz), scaling up in frequency should result in a LINC with < 40 dB spurious over a considerably wider band. Lower spurious levels or bandwidths of several tens of MHz will require asin^{-1}phase modulator that is less sensitive to delay in a feedback loop and a wider-bandwidth lower-distortion input limiter.     

A 1-MHz-bandwidth second-order continuous-time quadrature bandpass sigma-delta modulator for low-IF radio receivers

This paper presents a quadrature bandpass /spl Sigma//spl Delta/ modulator with continuous-time architecture. Due to the continuous-time architecture and the inherent anti-aliasing filter, the proposed /spl Sigma//spl Delta/ modulator needs no additional anti-aliasing filter in front of the modulator in contrast to quadrature bandpass /spl Sigma//spl Delta/ modulators with switched-capacitor architectures. The second-order /spl Sigma//spl Delta/ modulator digitizes complex analog I/Q input signals at 1-MHz intermediate frequency and operates within a clock frequency range of 25-100 MHz. The modulator chip achieves a peak signal-to-noise-distortion ratio (SNDR) of 56.7 dB and a dynamic range of 63.8 dB within a 1-MHz signal bandwidth and at a clock frequency of 100 MHz. Furthermore, it provides an image rejection of at least 40 dB. The 0.65-/spl mu/m BiCMOS chip consumes 21.8 mW at 2.7-V supply voltage.     

A two-path bandpass sigma-delta modulator with extended noiseshaping

A three-stage bandpass sigma-delta (ΣΔ) analog-to-digital converter has been designed specifically for operation at low oversampling ratios. In the proposed architecture, the center frequency of the third stage is shifted slightly from that of the first two stages to achieve more efficient noise shaping across the signal band. An experimental modulator based on the proposed topology has been integrated in a 0.25-μm CMOS technology and achieves a dynamic range of 75 dB with a maximum signal-to-noise-plus-distortion ratio (SNDR) of 70 dB when digitizing a 2-MHz signal band centered at 16 MHz. This circuit implements an f_s/4 bandpass architecture and thus operates at 64-MHz clock rate. It dissipates 110 mW from a 2.5-V supply, and its active area is 4 mm²     

An eighth-order bandpass ΔΣ modulator for A/Dconversion in digital radio

This paper examines the design and implementation of an eighth-order bandpass delta-sigma modulator. The design process is investigated from the signal flow graph level, through to the details of the switched capacitor implementation and layout considerations. Simulation results, highlighting the effects of process variation, are provided and the experimental performance of the modulator described. The modulator is implemented in a 0.8-μm BiCMOS process and occupies an active area of 1.7 mm². Operating from ±2.5-V supplies, the fabricated prototype exhibits stable behaviour and achieves a dynamic range of 67 dB over a 200-kHz bandwidth centered at the commonly used intermediate frequency of 10.7 MHz. This paper, therefore, demonstrates the viability of high-order single-bit bandpass delta-sigma modulation     

A 3.3-V CMOS 10.7-MHz sixth-order bandpass ΣΔ modulatorwith 74-dB dynamic range

A 3.3-V bandpass ΣΔ modulator for IF sampling at 10.7 MHz in digital radio applications has been developed. The modulator presents a sixth-order single-loop architecture and features a 74-dB dynamic range in a 2OO-kHz signal bandwidth (FM signal), while for a 9-kHz signal bandwidth (AM signal) the dynamic range is 88 dB. The modulator has been integrated in a standard 0.35-μm CMOS technology using switched-capacitor technique and consumes 76 mW from a single 3.3V supply     

A wide-band 280-MHz four-path time-interleaved bandpass sigma-delta modulator

This paper describes a 0.35-/spl mu/m CMOS fourth-order bandpass analog-digital sigma-delta (/spl Sigma//spl Delta/) modulator for wide-band base stations receivers. The modulator, based on a time-interleaved four-path architecture, achieves an equivalent sampling frequency of 280 MHz, although the building blocks operate at only 70 MHz. In measurements, the prototype chip achieves a dynamic range of 72 dB (12 bits of resolution) with a signal bandwidth of 4.375 MHz centered around an intermediate frequency of 70 MHz. The measured spurious-free dynamic range is 69 dB. The /spl Sigma//spl Delta/ modulator dissipates 480 mW from a 3.3-V supply, including voltage reference buffers and output pads with high-driving capabilities, and occupies 20 mm/sup 2/ of silicon area.     

New multirate bandpass sigma-delta modulators

A new architecture for fourth- and sixth-order bandpass sigma-delta (BP-SD) modulators is proposed here. The basic BP-SD modulator is obtained from its low-pass (LP) counterpart by means of the standard transformation z/sup -1/ /spl rarr/ -z/sup -2/, which transforms the integrators in the LP modulator into resonators in the BP modulator, and places the input signal band at the frequency f/sub s//4, where f/sub s/ is the sampling rate. In the proposed architecture, the second resonator (and the third one for the sixth-order case) is implemented using a two-path strategy, by means of two high-pass filters (whose poles are located at f/sub s//2) operating in a time-interleaved mode. However, unlike other BP-SD modulators using the two-path strategy, in our approach, the effective sampling frequency in the second resonator (and in the third one for the sixth-order case) is increased to 2/spl middot/f/sub s/ by maintaining the clock rate of the high-pass filters to f/sub s/ which, in turn, places their poles at f/sub s//2. The signal band in the input of the second resonator is moved from the center frequency f/sub s//4 to f/sub s//2 by a modulation process that separates the signal into their in-phase and quadrature components. Another demodulation process in the digital domain reverses this frequency translation of the signal band before the output signal is converted to the analog domain and fed back to the modulator input. A detailed theoretical analysis of the architecture is done in the paper. Owing to the multirate nature of the proposed modulators, simulation results show an improvement of approximately 12 dB in the input dynamic range (fourth-order case) when compared to conventional modulators of the same order clocked at the same frequency rate (in the first resonator).     

On the Design of Undersampling Continuous-Time Bandpass Delta–Sigma Modulators for Gigahertz Frequency A/D Conversion

This paper describes issues and tradeoffs related to the design of undersampling delta–sigma modulators $(DeltaSigma {rm Ms})$ for wireless receivers. It proposes a new bandpass undersampling $DeltaSigma {rm M}$ architecture dedicated to multigigahertz frequencies. This paper is based on up-sampling in the feedback path to remove the analog mixer usually found in the modulator. Design equations are discussed for an optimum operating point when the input signal is at 1.8 GHz. The related design model can be applied to many communication standards. The underlying proposed architecture can receive high-frequency carriers modulated with signals of bandwidth as large as 5 MHz. In the proposed design, it converts the signal into digital data with a spurious-free dynamic range of 46 dB at a sampling frequency of 810.1 MHz. Design simulation, characterization, and implementation of the proposed modulator are done using a 0.13- ${rm mu}hbox{m}$ CMOS technology.      

40 MHz IF 1 MHz Bandwidth Two-Path Bandpass ΣΔ Modulator With 72 dB DR Consuming 16 mW

A bandpass modulator with two time-interleaved second-order modulators and cross-coupled paths is described. Split zeros around the 40 MHz IF provide a signal band of 1 MHz with 72 DR and 65.1 dB peak SNR. The circuit, integrated in a 0.18 CMOS technology, uses a 60 MHz clock per channel. Experimental results show that the in-band region is not affected by tones caused by mismatches and that a two-tones input causes an IMD signal of 68 . The power consumption is 16 mW with 1.8 V supply.     

High-speed continuous-time band pass ΔΣ modulator for class-S systems

A fully integrated continuous-time bandpass delta-sigma modulator (BPDSM) fabricated in a 0.25 μm SiGe BiCMOS is presented. It consists of a two-stage second-order resonator, high-speed comparator, multi-feedback current digital-to-analog converter, and an output buffer. The input frequency can be tuned from 3.55 to 3.9 GHz at a 9.5 GHz fixed sampling clock frequency. This modulator dissipates 109 mA from a 3.3 V power supply. The peak signal-to-noise ratio (SNR) of the sine-wave input is 37.3 dB in a 20 MHz channel bandwidth, and the error vector magnitude (EVM) of a 64QAM long-term evolution (LTE) downlink signal is 5.94% with a 10.5 dB peak-to-average-power ratio (PAPR).     

Quadrature bandpass ΔΣ modulation for digital radio

A quadrature bandpass ΔΣ modulator IC facilitates monolithic digital-radio-receiver design by allowing straightforward “complex A/D conversion” of an image reject mixer's I and Q, outputs. Quadrature bandpass ΔΣ modulators provide superior performance over pairs of real bandpass ΔΣ modulators in the conversion of complex input signals, using complex filtering embedded in ΔΣ loops to efficiently realize asymmetric noise-shaped spectra. The fourth-order prototype IC, clocked at 10 MHz, converts narrowband 3.75-MHz I and Q inputs and attains a dynamic range of 67 dB in 200-kHz (GSM) bandwidth, increasing to 71 and 77 dB in 100- and 30-kHz bandwidths, respectively. Maximum signal-to-noise plus distortion ratio (SNDR) in 200-kHz bandwidth is 62 dB. Power consumption is 130 mW at 5 V. Die size in a 0.8-μm CMOS process is 2.4×1.8 mm²      

Low-distortion bandpass /spl Sigma/-/spl Delta/ modulator for wireless radio receivers

A low-distortion bandpass sigma-delta modulator is proposed. It was found that the key to improving linearity is to add a feedforward signal path in a double-delay resonator bandpass structure. The proposed technique improves the tonal behaviour even at low oversampling ratio and can be applied for any order of modulator. Based on the proposed architecture, a fourth-order single-bit sigma-delta modulator can achieve a dynamic range of 84 dB and a spurious free dynamic range of 98 dB at 10.71 MHz with a signal bandwidth of 200 kHz, making it ideal for a narrowband IF-sampled wireless receiver designed for compliance with GSM/GPRS standards.     

High-performance optical analog link using external modulator

An experimental fiber-optic analog link with a noise figure of only 6-dB, a 104-dB intermodulation-free dynamic range (measured using a 10-Hz noise bandwidth), and an RF-to-RF gain of 11 dB at 50 MHz is discussed. The link includes no electronic amplification. It uses a very sensitive bandpass impedance-matched Ti:LiNbO₃ interferometric modulator and an input optical power of 55 mW at 1.32 μm     

70-MHz IF 10-MHz bandwidth bandpass \Upsigma\Updelta modulator for WCDMA applications

A MASH bandpass $\Upsigma\Updelta$ modulator for wide-band code division multiple access (WCDMA) applications is presented. The signal bandwidth of the proposed modulator is 10?MHz centered around an intermediate frequency (IF) of 70.5?MHz. Two two-path second-order bandpass $\Upsigma\Updelta$ modulators make the MASH architecture, which realizes a noise transfer function with four couples of complex conjugate zeros. The proposed circuit, fabricated with a 0.18???m CMOS technology, uses a sampling frequency of 180?MHz to obtain a resolution of about 12?bits in the 10?MHz bandwidth around the IF. The measured modulator power consumption is 95?mW with a supply voltage of 1.8?V. The achieved figure-of-merit (FoM _BP ) is 0.37?pJ/conversion-level.     

A Sub-1V Fourth-Order Bandpass Delta-Sigma Modulator

A sub-1V fourth-order bandpass delta-sigma modulator is presented in this paper. Using the switched opamp technique enables the modulator to operate at only 0.8 V supply voltage without using voltage multipliers or bootstrapping switches. A two-path structure is applied to relax the settling requirement. Implemented in a 0.25-m one-poly, five-metal standard CMOS process, the prototype modulator exhibits a signal-to-noise-plus-distortion ratio (SNDR) of 58.2 db and a dynamic range (DR) of 64 db in a 60 KHz signal bandwidth centered at 1.25 MHz while consuming 2.5 mW and occupying an active area of 2.11 mm².     

A 13.5-mW 185-Msample/s ΔΣ modulator for UMTS/GSMdual-standard IF reception

A system-oriented approach for the design of a UMTS/GSM dual-standard ΔΣ modulator is presented to demonstrate the feasibility of achieving intermediate frequency (IF) around 100 MHz, high dynamic range, and low power consumption at the same time. The circuit prototype implements 78 MHz IF for GSM and 138.24 MHz for wideband code division multiple access (WCDMA), which are set to be 3/4 of the analog-to-digital converter sampling rate. A two-path IF sampling and mixing topology with a low-pass ΔΣ modulator, run at half the sampling rate, is used. Implemented in 0.25-μm CMOS, the circuit achieves dynamic range and peak signal-to-noise and distortion ratio for GSM of 86 and 72 dB, respectively. The corresponding values for WCDMA are 54 and 52 dB, respectively. Optimization is performed at all stages of design to minimize power consumption. The complete circuit consumes less than 11.5 mW for GSM and 13.5 mW for WCDMA at 2.5-V supply, of which 8 mW is due to the analog part     

A 400-Ms/s frequency translating bandpass sigma-delta modulator

A bandpass Σ-Δ modulator is described in this paper that uses frequency translation inside the Σ-Δ modulator loop to take advantage of the attributes of both continuous-time and discrete-time circuits. A CMOS direct-conversion modulator digitizes a 200 kHz intermediate-frequency signal centered at 100 MHz and produces baseband I/Q outputs with a peak signal-to-noise ratio of 54 dB. Images due to I/Q mismatches are suppressed by 50 dB. This 0.35-μm digital CMOS chip operates from a 2.7/3.3-V supply, dissipates 330 mW, and occupies 3.2 mm²