电力系统电磁暂态仿真IGBT详细建模及应用

在电力系统电磁暂态离线和实时仿真中,以绝缘栅双极型晶体管(IGBT)为代表的全控型电力电子器件常采用理想开关模型。IGBT器件在交直流变换器、直流断路器中获得了广泛的应用,器件的运行状态会对系统暂态过程产生影响,而系统的暂态过程也会增加器件的电压、电流应力,严重时可能造成器件损坏,进而影响整个设备及系统的安全可靠运行。基于理想开关模型的电磁暂态仿真无法准确模拟暂态过程中该器件的特性及其受到的应力。研究系统电路、器件及其控制之间的动态相互作用,就对电磁暂态仿真中IGBT准确建模提出了更高的要求。近年来,多种IGBT详细模型和解耦方法被提出,并被应用在离线及实时电磁暂态仿真中。得益于高性能计算设备的快速发展,详细模型可高效应用于含有大量IGBT器件的交直流系统仿真中。文中对不同类型建模方法进行归纳,分析其功能、计算复杂度和准确度,并详细介绍了系统解法、并行算法与仿真平台等方面内容。另外,还举例介绍了IGBT详细建模的应用场景,分析了在建模、系统解法、并行算法及应用领域等方面的难点与限制,并提出了相应的建议。     

基于可关断器件电力电子装置纳秒级开关暂态实时仿真技术研究

为实现全面的装置特性分析和物理测试,介绍了基于可关断器件电力电子装置多动态混合实时仿真方法和仿真平台实现方案。在ns级仿真模块中建立绝缘栅双极晶体管(IGBT)受控源模型,针对基于开关特性曲线嵌入法求解IGBT开关暂态过程进行仿真试验验证。试验内容涵盖半桥型、全桥型模块化多电平换流器(MMC)子模块全部工作状态,试验结果验证了基于开关特性曲线嵌入法的ns级开关暂态实时仿真方法的正确性和完整性。该仿真方法反映了IGBT开通关断细节的小步长仿真,可用于装置物理特性分析、控制系统闭环测试、器件级保护策略验证等方面的研究。     

重杂散电感电磁搅拌专用变频电源IGBT关断尖峰电压研究

由主电路回路和功率器件内部寄生杂散电感引起的电磁搅拌电源中IGBT开关器件关断尖峰电压过高是电磁搅拌专用变频电源失效的主要原因之一。以某公司老一代大功率电磁搅拌器专用变频电源中IGBT关断尖峰高导致功率开关器件过压损坏为例,首先分析了IGBT关断尖峰电压产生的原因及IGBT关断尖峰电压过高带来的危害,接着总结目前常用的IGBT过压尖峰解决办法及利弊,并最终采用IGBT的分级关断技术方案来解决电磁搅拌专用变频电源中IGBT关断尖峰电压过高的问题。实践证明,采用所提出的解决IGBT过压尖峰的措施后,几乎杜绝了电磁搅拌器专用变频电源因IGBT过压而失效的现象。     

IGBT模块的新型开关模型与损耗分析

为解决绝缘栅双极型晶体管IGBT（insulated gate bipolar transistor）模块开关模型适用性差、拟合度低、开关损耗难以实时连续计算的问题,通过分析IGBT模块开关过程的动、静态特性,着重考虑器件结温和杂散参数等参考量对IGBT开关过程中的瞬时电压、电流波形的影响,基于曲线拟合理论,建立了IGBT模块的开关模型与损耗模型。所建立的开关模型通用性强,适用于相邻开关周期内开关管导通电流不相等的电路;损耗模型精确度高,能够实时累加计算电路的损耗数值。基于Matlab/Simulink环境对开关过程进行仿真并搭建了双重移相DC-DC实验样机进行验证,仿真与实验结果验证了所提出的开关模型及损耗模型的正确性和准确性。     

混合并联功率器件开关模式优化及特性分析

在对比SiC MOSFET与Si IGBT器件开关特性的基础上,提出了一种SiC MOSFET和Si IGBT混合并联器件的优化开关模式,并结合系统稳态模型,分析了其非理想开关过程特性。最后利用双脉冲测试,对在不同开通/延迟时间下混合并联器件开关特性展开了实验。实验结果表明,所提开关模式能够同步实现SiC MOSFET扩容并降低Si IGBT的开关损耗,此处所得研究成果对于拓展两种开关器件的混合应用提供了技术参考。     

IGBT模型优化及其在Buck变换器中的功耗分析

以绝缘栅双极型晶体管(IGBT)的物理结构为基础,建立并优化器件的电路仿真分析模型,并对器件电路模型的开关特性进行了模拟分析,结果显示该模型基本能反映出IGBT的开关特性及开关过程中的拖尾效应;进而把该器件电路模型引入基本Buck变换器中,并对IGBT在Buck变换器中的功率损耗进行了仿真分析,结果显示随着门极控制信号的开关频率或占空比的提高,器件的功率损耗逐渐变大,其变化趋势可以为Buck变换器设计及电路工作条件的选择提供参考。     

混沌SPWM功率变换器IGBT的Icepak温升仿真与实验

以四象限整流器中IGBT为例,为混沌SPWM控制下功率开关器件进行温升分析。首先基于SolidWorks对功率器件IGBT搭建了3D模型,并将其导入Icepak中,然后通过IGBT的损耗分析模型理论计算了整流器分别工作于混沌SPWM和传统SPWM控制方式下的IGBT的损耗功率,并在Icepak中进行相应的动态仿真,仿真结果表明在同样的输出功率条件下,工作在1 kHz频率时,基于Logistic映射的混沌SPWM控制下变换器功率器件温升与传统SPWM控制下的器件温升略有区别。最后,基于仿真模型搭建了温升实验平台,实验证明了仿真的正确性,并为混沌SPWM功率变换器的温升研究提供了一种分析方法。     

PSPICE和Matlab在IGBT动态仿真中应用

简要分析了目前常用的电力电子仿真软件PSPICE(Simulation Program with IC Emphasis)和Matlab的主要性能特点及在电力电子仿真中的适用程度。绝缘栅双极型晶体管IGBT(Insulated Gate Bipolar Transistor)开关回路在关断瞬间由于感性负载的作用常会伴随着擎住效应,对IGBT器件本身会造成严重的损伤,因此必须在IGBT器件两端并联缓冲电路．以实现对器件的过压保护。缓冲电路的拓扑结构有多种．过压保护的效果也不一样。应用以上两种仿真软件对IGBT开关回路进行动态仿真研究．比较并分析了两种缓冲电路在IGBT关断瞬间的不同过压保护效果。并且说明了PSPICE和Matlab仿真结果的差异及其原因。     

基于戴维宁定理的MMC子模块等效数学模型的研究

模块化多电平换流器(Modular Multilevel Converter,MMC)的每个子模块都包含两个电力电子开关元件IGBT。随着系统模块数的增加,仿真的速度大大降低,如何在有限的资源中实现MMC的实时仿真成为了仿真系统的瓶颈。根据IGBT在MMC中的工作原理,把IGBT等效为两个不同状态的等效电阻,然后根据戴维宁等效定理建立MMC子模块的等效数学模型。最后在Matlab/Simulink环境下进行该数学模型的仿真,并与采用器件模型的仿真结果进行了对比。仿真结果表明该数学模型在一定的误差范围内可以取代MMC子模块的物理模型,具有一定的实用性。     

MMC子模块中IGBT等效模型的仿真验证

RTDS（real time digital simulation）上小步长仿真模块对开关元件的数量有严格的限制,而模块化多电平换流器（modular multilevel converter,MMC）的每个子模块都有2个电力电子开关元件IGBT。随着系统容量的不断增加,如何在有限的硬件资源中实现多电平系统的仿真成为实时仿真系统的瓶颈。对如何在RTDS大步长的环境中建立正确的IGBT元件等效模型进行了分析,根据IGBT在MMC子模块（sub-module,SM）中的工作原理,采用开关函数建立IGBT的等效数学模型。该模型能够有效减小仿真占用的资源,扩大仿真容量,在大步长环境下能够正确表征IGBT的运行特性。采用Matlab验证了所建立的IGBT模型的可行性和正确性。     

适用于电路仿真的IGBT模块暂态模型研究

高压IGBT与二极管构成IGBT模块已经广泛应用于柔性直流输电技术领域。然而现有仿真研究难以模拟IGBT模块中IGBT与二极管各自详细开关暂态特性及相互影响,因此提出一种适用于电路仿真的IGBT模块暂态模型及其参数通用提取方法。模型采用机理推导、电气等效、曲线拟合等方法在PSCAD、SABER等电路仿真平台实现,无需获取器件底层参数和求解复杂物理方程,不仅可以实现电路仿真中IGBT模块的各种运行状态,而且可以在纳秒级步长下模拟其电压电流尖峰、拖尾电流、米勒平台等开关暂态特性。通过与SABER中通用模型仿真结果及实验实测波形对比分析,验证了IGBT模块暂态模型和参数提取方法的正确性和通用性,为进一步将模型应用于柔性直流输电系统仿真、电磁干扰及损耗分析、控制策略等研究打下基础。     

牵引变流器中6500 V场终止IGBT的物理场仿真研究

绝缘栅双极性晶体管IGBT(insulated gate bipolar transistor)凭借其优异的载流和抗压能力,在牵引变流器中得到了广泛的应用.通过仿真研究了解其动态特性,对于保障其自身和系统的运行稳定性和可靠性具有重要意义.针对牵引变流器用大功率IGBT封装模块,在分析IGBT工作原理和特性的基础上,充分...     

外部汇流母排对压接型IGBT器件内部多芯片并联均流特性的影响

压接型IGBT器件内部芯片之间的动态均流特性直接影响着IGBT器件的坚固性与可靠性。考虑到并联均流实验的困难,现有的压接型IGBT芯片级并联均流研究通常都是通过提取器件内部封装结构的寄生参数,并结合IGBT芯片的等效电路模型,在电路仿真环境中开展的,不考虑器件外部电磁条件对器件内部电流分布的影响。然而,该文通过9枚压接型IGBT芯片的并联均流实验发现,各个通流支路之间存在显著的动态电流不均衡,而且电流的分布特性不仅与内部并联芯片的相对位置有关,还与连接器件的外部汇流母排存在明显的关联。为了揭示器件内部电流分布特性与外部汇流母排之间的耦合关系,该文对被测器件与外部汇流母排进行三维有限元建模,从频域和时域2个方面,计算IGBT器件内部的电磁场分布特性。频域计算表明,由于外部汇流母排与内部并联芯片存在磁场耦合(即电感耦合),当频率超过一定数值后,外部汇流母排会对各个通流支路的电流产生显著影响。时域计算进一步再现了并联均流实验中外部汇流母排对各个通流支路上动态电流分布的影响规律。结果表明,在压接型IGBT器件的设计和应用中,不仅需要关注器件内部芯片间的相对位置对动态均流特性的影响,同时也要关注外部汇流母排引入的电磁不对称性。最后提出一种对称化的母排设计方案,并通过三维有限元计算,证实对称化母排设计可明显改善器件内部的动态均流特性。     

Si IGBT/SiC MOSFET混合器件及其应用研究

综述了Si IGBT/SiC MOSFET混合器件在门极优化控制策略、集成驱动设计、热电耦合损耗模型、芯片尺寸配比优化和混合功率模块研制等方面的最新研究成果与进展。Si IGBT/SiC MOSFET混合器件结合了SiC MOSFET的高开关频率、低开关损耗特性和Si IGBT的大载流能力和低成本优势,已有文献的最新研究和实验结果验证了该类器件的优异特性,表明其对高性能电力电子器件实现更高电流容量、更高开关频率和较低成本具有重要意义,是高性能变换器应用中非常有潜力的功率器件类型。     

EMTP modeling of IGBT dynamic performance for power dissipationestimation

A new approach to the modeling of insulated gate bipolar transistors (IGBTs) for electromagnetic transients program (EMTP) simulation is developed. Other commercially available simulators, such as PSPICE, model the devices on an exact semiconductor physics basis. They suffer from large amounts of CPU time for sinewave pulsewidth modulation (PWM) inverter applications which require a complete cycle simulation at fundamental frequency with a small time step to cover the details of IGBT switching transients. This approach uses a curve-fitting method, combined with the point-by-point user-defined function available in EMTP, to model the dynamic characteristics of IGBTs. Since there is no device physics modeling required, this simulation is much faster than the conventional approach. The proposed method is applicable to both static and dynamic modeling, on a cycle-by-cycle basis, which is important for dynamic power dissipation and thermal analysis. The simulation includes IGBT turn-on and turn-off transients, IGBT saturation, free-wheeling diode forward voltage and reverse recovery characteristics. The simulation results are verified by comparison with experimental measured data. Measurements show a close agreement with simulations     

A fast power loss calculation method for long real time thermal simulation of IGBT modules for a three‐phase inverter system

A fast power losses calculation method for long real time thermal simulation of IGBT module for a three‐phase inverter system is presented in this paper. The speed‐up is obtained by simplifying the representation of the three‐phase inverter at the system modelling stage. This allows the inverter system to be simulated predicting the effective voltages and currents whilst using large time‐step. An average power losses is calculated during each clock period, using a pre‐defined look‐up table, which stores the switching and on‐state losses generated by either direct measurement or automatically based upon compact models for the semiconductor devices. This simulation methodology brings together accurate models of the electrical systems performance, state of the art‐device compact models and a realistic simulation of the thermal performance in a usable period of CPU time and is suitable for a long real time thermal simulation of inverter power devices with arbitrary load. Thermal simulation results show that with the same IGBT characteristics applied, the proposed model can give the almost same thermal performance compared to the full physically based device modelling approach. Copyright © 2006 John Wiley & Sons, Ltd.     

模块化多电平变换器全桥型子模块优化均压控制方法

模块化多电平变换器(MMC)子模块(SM)的数量与直流侧电压成正比,当SM增加时,会导致MMC的开关损耗急剧增加,因此降低功率器件的开关频率一直是MMC的重要研究方向之一。采用最近电平逼近调制(NLM)方式,提出一种基于全桥型SM的改进均压排序法,旨在降低MMC中功率器件IGBT的开关频率,该方法实现相对简单,无需额外的控制器,且易于扩展。最后,通过在MATLAB/Simulink平台搭建了19个全桥SM的仿真模型,验证了该方法的有效性。验证了所提全桥型SM优化均压策略,可以有效避免IGBT不必要的反复投切,降低IGBT的开关损耗,同时对外部输出特性不会产生负面影响。     

功率变换器去耦电容参数选择与过电压预测

功率变换器在高速开通与关断的过程中产生的电磁干扰影响系统的正常运行,提出一种基于绝缘栅双极晶体管(insulated-gate bipolar transistor,IGBT)开关模块的功率变换器电磁干扰(electromagnetic interference,EMI)噪声源建模方法,可以精确的预测整个传导干扰频段内的EMI噪声。分析去耦电容对电路的影响,基于IGBT模块等效电磁干扰噪声源模型来预测功率变换器产生的过电压,通过对过电压的分析选择去耦电容的参数,整个分析体现如何应用该模型进行参数选择的过程。最后,仿真和实验表明参数选择的正确性。     

A novel prototype of auxiliary edge resonant bridge leg link snubber‐assisted soft‐switching sine‐wave PWM inverter

This paper proposes a new circuit topology of the three‐phase soft‐switching PWM inverter and PFC converter using IGBT power modules, which has the improved active auxiliary switch and edge resonant bridge leg‐commutation‐link soft‐switching snubber circuit with pulse current regenerative feedback loop as compared with the typical auxiliary resonant pole snubber discussed previously. This three‐phase soft‐switching PWM double converter is more suitable and acceptable for a large‐capacity uninterruptible power supply, PFC converter, utility‐interactive bidirectional converter, and so forth. In this paper, the soft‐switching operation and optimum circuit design of the novel type active auxiliary edge resonant bridge leg commutation link snubber treated here are described for high‐power applications. Both the main active power switches and the auxiliary active power switches achieve soft switching under the principles of ZVS or ZCS in this three‐phase inverter switching. This three‐phase soft‐switching commutation scheme can effectively minimize the switching surge‐related electromagnetic noise and the switching power losses of the power semiconductor devices; IGBTs and modules used here. This three‐phase inverter and rectifier coupled double converter system does not need any sensing circuit and its peripheral logic control circuits to detect the voltage or the current and does not require any unwanted chemical electrolytic capacitor to make the neutral point of the DC power supply voltage source. The performances of this power conditioner are proved on the basis of the experimental and simulation results. Because the power semiconductor switches (IGBT module packages) have a trade‐off relation in the switching fall time and tail current interval characteristics as well as the conductive saturation voltage characteristics, this three‐phase soft‐switching PWM double converter can improve actual efficiency in the output power ranges with a trench gate controlled MOS power semiconductor device which is much improved regarding low saturation voltage. The effectiveness of this is verified from a practical point of view. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 155(4): 64–76, 2006; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20207     

Characteristics and utilization of a new class of low on-resistanceMOS-gated power device

A new class of MOS-gated power semiconductor devices Cool MOS (Cool MOS is a trademark of Infineon Technologies, Germany) has been introduced with a supreme conducting characteristic that overcomes the high on-state resistance limitations of high-voltage power MOSFETs. From the application point of view, a very frequently asked question immediately arises: does this device behave like a MOSFET or an insulated gate bipolar transistor (IGBT)? The goal of this paper is to compare and contrast the major similarities and differences between this device and the traditional MOSFET and IGBT. In this paper, the new device is fully characterized for its: (1) conduction characteristics; (2) switching voltage, current, and energy characteristics; (3) gate drive resistance effects; (4) output capacitance; and (5) reverse-bias safe operating areas. Experimental results indicate that the conduction characteristics of the new device are similar to the MOSFET but with much smaller on-resistance for the same chip and package size. The switching characteristics of the Cool MOS are also similar to the MOSFET in that they have fast switching speeds and do not have a current tail at turn-off. However, the effect of the gate drive resistance on the turn-off voltage rate of rise (dv/dt) is more like an IGBT. In other words, a very large gate drive resistance is required to have a significant change on dv/dt, resulting in a large turn-off delay. Overall, the device was found to behave more like a power MOSFET than like an IGBT