Time-resolved photoluminescence studies of annealed 1.3-μm GaInNAsSb quantum wells

Time-resolved photoluminescence (PL) was applied to study the dynamics of carrier recombination in GaInNAsSb quantum wells (QWs) emitting near 1.3 μm and annealed at various temperatures. It was observed that the annealing temperature has a strong influence on the PL decay time, and hence, it influences the optical quality of GaInNAsSb QWs. At low temperatures, the PL decay time exhibits energy dependence (i.e., the decay times change for different energies of emitted photons), which can be explained by the presence of localized states. This energy dependence of PL decay times was fitted by a phenomenological formula, and the average value of E₀, which describes the energy distribution of localized states, was extracted from this fit and found to be smallest (E₀ = 6 meV) for the QW annealed at 700°C. In addition, the value of PL decay time at the peak energy was compared for all samples. The longest PL decay time (600 ps) was observed for the sample annealed at 700°C. It means that based on the PL dynamics, the optimal annealing temperature for this QW is approximately 700°C.     

Improved ground-state modulation characteristics in 1.3 μm InAs/GaAs quantum dot lasers by rapid thermal annealing

We investigated the ground-state (GS) modulation characteristics of 1.3 μm InAs/GaAs quantum dot (QD) lasers that consist of either as-grown or annealed QDs. The choice of annealing conditions was determined from our recently reported results. With reference to the as-grown QD lasers, one obtains approximately 18% improvement in the modulation bandwidth from the annealed QD lasers. In addition, the modulation efficiency of the annealed QD lasers improves by approximately 45% as compared to the as-grown ones. The observed improvements are due to (1) the removal of defects which act as nonradiative recombination centers in the QD structure and (2) the reduction in the Auger-related recombination processes upon annealing.     

Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence of an electron miniband within the columns of the QDs. Miniband formation results in a conversion of the indirect to a quasi-direct excitons takes place. The optical transitions between electron states within the miniband and hole states within QDs are responsible for an intense luminescence in the 1.4–1.8 μm range, which is maintained up to room temperature. At 300 K, a light emitting diode based on such Ge/Si QD superlattices demonstrates an external quantum efficiency of 0.04% at a wavelength of 1.55 μm.     

Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers

We investigate the influence of thermal effects on the high-speed performance of 1.3-μm InAs/GaAs quantum-dot lasers in a wide temperature range (5–50°C). Ridge waveguide devices with 1.1 mm cavity length exhibit small signal modulation bandwidths of 7.51 GHz at 5°C and 3.98 GHz at 50°C. Temperature-dependent K-factor, differential gain, and gain compression factor are studied. While the intrinsic damping-limited modulation bandwidth is as high as 23 GHz, the actual modulation bandwidth is limited by carrier thermalization under continuous wave operation. Saturation of the resonance frequency was found to be the result of thermal reduction in the differential gain, which may originate from carrier thermalization.     

Gain studies of 1.3-μm dilute nitride HELLISH-VCSOA for optical communications

The hot electron light emitting and lasing in semiconductor heterostructure-vertical-cavity semiconductor optical amplifier (HELLISH-VCSOA) device is based on Ga_0.35In_0.65 N_0.02As_0.08/GaAs material for operation in the 1.3-μm window of the optical communications. The device has undoped distributed Bragg reflectors (DBRs). Therefore, problems such as those associated with refractive index contrast and current injection, which are common with doped DBRs in conventional VCSOAs, are avoided. The gain versus applied electric field curves are measured at different wavelengths using a tunable laser as the source signal. The highest gain is obtained for the 1.3-μm wavelength when an electric field in excess of 2 kV/cm is applied along the layers of the device.     

Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs

We report the observation of room-temperature optical gain at 1.3 μm in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain.     

Effects of high-temperature annealing on the microstructure and properties of C/SiC–ZrC composites

C/SiC–ZrC composites were prepared by a combining slurry process with precursor infiltration and pyrolysis, and then annealed from 1200 °C to 1800 °C. With rising annealing temperature, their mass loss rate increased, and the flexural strength and modulus decreased from 227.9 MPa to 41.3 MPa and from 35.3 GPa to 22.7 GPa, respectively. High-temperature annealing, which elevated thermal stress and strengthened interface bonding, was harmful to the flexural properties. However, it improved the ablation properties by increasing the crystallization degree of SiC matrix. The mass loss rate and linear recession rate decreased with increasing annealing temperature and those of the samples annealed at 1800 °C were 0.0074 g/s and 0.0011 mm/s respectively. Taking mechanical and ablation properties into consideration simultaneously, the optimum annealing temperature was 1600 °C.     

Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection

InGaAs/AlGaAs multiple quantum wells used for 4.3 μm mid-wavelength infrared quantum well infrared detectors were grown by molecular beam epitaxy. In composition loss was observed and quantitatively studied by high-resolution X-ray diffraction technology. By this In composition loss effect, the energy band engineering on the photo-response wavelength is not easily achieved. A thin AlGaAs barrier grown at low temperature is used to suppress the In atom desorption, and this growth process was verified to be able to adjust the photo-response wavelength as designed by energy band engineering in the photocurrent spectrum.     

Effects of annealing temperature on structure and electrical properties of sol–gel derived 0.65PMN-0.35PT thin film

0.65Pb(Mg_1/3Nb_2/3)O₃-0.35PbTiO₃ (0.65PMN-0.35PT) thin films were deposited on Pt/Ti/SiO₂/Si substrates annealed from 550 to 700 °C using sol-gel process. The effects of annealing temperature on microstructure, insulating, ferroelectric and dielectric properties were characterized. The result reveals that 0.65PMN-0.35PT thin films possess a polycrystalline structure, matching well with the perovskite phase despite the existence of a slight pyrochlore phase. The film samples annealed at all temperatures exhibit relatively dense surfaces without any large voids and the grain size increases generally with the increase of the annealing temperature. Meanwhile, pyrochlore phase is considerably generated because of the deformation of perovskite phase caused by volatilization of Pb at an excessive high-temperature. The film annealed at 650 °C exhibits superior ferroelectricity with a remanent polarization (P_r) value of 13.31 μC/cm², dielectric constant (ε_r) of 1692 and relatively low dielectric loss (tanδ) of 0.122 at 10⁴ Hz due to the relatively homogeneous large grain size of 130 nm and low leakage current of approximately 10^-6 A/cm².     

Effects of modified silica on the co-vulcanization kinetics and mechanical performances of natural rubber/styrene–butadiene rubber blends

Rubber blends are widely used for combining the advantages of each rubber component. However, to date, how to determine and distinguish the vulcanization kinetics for each single rubber phase in rubber blends during the co-vulcanization process is still a challenge. Herein, high-resolution pyrolysis gas chromatography–mass spectrometry (HR PyGC-MS) was employed for the first time to investigate the vulcanization kinetics of natural rubber (NR) and styrene–butadiene rubber (SBR) in NR/SBR blends filled with modified silica (SiO₂). The reaction rates of crosslinking of each rubber phase in NR/SBR were calculated, which showed that the crosslinking rates of NR were much lower than those of SBR phase in the unfilled blends and blends filled with unmodified and silane modified silica. Interestingly, the vulcanization rates of NR and SBR phase were approximately same in the vulcanization accelerator modified silica filled blends, showing better co-vulcanization. In addition, the vulcanization accelerator modified silica was uniformly dispersed and endowed rubber blends with higher mechanical strength compared to the untreated silica. © 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2020 , 137, 48838.     

Gas detonation in a flat channel of 50-μm depth

Propagation of a combustion knock in a narrow channel from one gas volume to another is found to occur at an initial pressure thrice as low as that in the case of propagation via multifront detonation. Translated fromFizika Goreniya i Vzryva, Vol. 34, No. 6, pp. 68–70, November–December 1998.     

Absorption and Scattering Properties of Dust Clouds at 10.5-μm

Mass-density-normalized absorption and extinction coefficients for arid region soil-based dust were measured at a wavelength of 10.5 μm using photoacoustical techniques, short-path transmissometry, and aerosol dosimetry. An environmental chamber incorporating strong circulation, as well as the various aerosol sampling systems, was specifically designed for aerosol size distributions with particles as large as 40 μm in radius.

The mass extinction coefficient was found to be 0.22 m²/g, while the single scattering albedo, determined from the absorption and extinction coefficients, was 0.5. Calculations of these properties were based on two approaches: analyses of size distributions from photomicrographs of filter samples and analyses of the results obtained using a mixed-medium settling theory. In both cases, Mie theory was applied despite the clearly irregular particle forms. Agreement was close to the measured value for both approaches. The expected overestimation of the optical properties for the former model did not occur. Larger particles in this range are included because of their relevance to arid region dust clouds.     

Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3μm operation

The Top-Hat hot electron light emission and lasing in semiconductor heterostructure (HELLISH)-vertical cavity semiconductor optical amplifier (VCSOA) is a modified version of a HELLISH-VCSOA device. It has a shorter p-channel and longer n-channel. The device studied in this work consists of a simple GaAs p-i-n junction, containing 11 Ga_0.35In_0.65 N_0.02As_0.08/GaAs multiple quantum wells in its intrinsic region; the active region is enclosed between six pairs of GaAs/AlAs top distributed Bragg reflector (DBR) mirrors and 20.5 pairs of AlAs/GaAs bottom DBR mirrors. The operation of the device is based on longitudinal current transport parallel to the layers of the GaAs p-n junction. The device is characterised through I-V-L and by spectral photoluminescence, electroluminescence and electro-photoluminescence measurements. An amplification of about 25 dB is observed at applied voltages of around V = 88 V.     

Initial stage growth of GexSi1?x layers and Ge quantum dot formation on GexSi1?x surface by MBE

Critical thicknesses of two-dimensional to three-dimensional growth in Ge_xSi_1−x layers were measured as a function of composition for different growth temperatures. In addition to the (2 × 1) superstructure for a Ge film grown on Si(100), the Ge_xSi_1−x layers are characterized by the formation of (2 × n) reconstruction. We measured n for all layers of Ge/Ge_xSi_1−x/Ge heterosystem using our software with respect to the video recording of reflection high-energy electron diffraction (RHEED) pattern during growth. The n reaches a minimum value of about 8 for clear Ge layer, whereas for Ge_xSi_1−x films, n is increased from 8 to 14. The presence of a thin strained film of the Ge_xSi_1−x caused not only the changes in critical thicknesses of the transitions, but also affected the properties of the germanium nanocluster array for the top Ge layer. Based on the RHEED data, the hut-like island form, which has not been previously observed by us between the hut and dome islands, has been detected. Data on the growth of Ge/Ge_xSi_1−x/Ge heterostructures with the uniform array of islands in the second layer of the Ge film have been received.     

Effects of α- and γ-tocopherols on the autooxidation of purified sunflower triacylglycerols

The antioxidant effects of α- and γ-tocopherols were evaluated in a model system based on the autooxidation of purified sunflower oil (p-SFO) triacylglycerols at 55°C for 7 d. Both tocopherols were found to cause more than 90% reduction in peroxide value when present at concentrations >20 ppm. α-Tocopherol was a better antioxidant than γ-tocopherol at concentrations ≤40 ppm but a worse antioxidant at concentrations >200 ppm. Neither α- nor γ-tocopherol showed a prooxidant effect at concentrations as high as 2000 ppm. The amount of tocopherols consumed during the course of oxidation was positively correlated to the initial concentration of tocopherols, and the correlation was stronger for α- than for γ-tocopherol. This correlation suggested that, besides reactions with peroxyl radicals, destruction of tocopherols may be attributed to unknown side reactions. Addition of FeSO₄, as a prooxidant, caused a 12% increase in the peroxide value of p-SFO in the absence of tocopherols. When tocopherols were added together with FeSO₄, some increase in peroxide value was observed for samples containing 200, 600 or 1000 ppm of α- but not γ-tocopherol. The addition of FeSO₄, however, caused an increase in the amount of α- and γ-tocopherols destroyed and led to stronger positive correlations between the amount of tocopherols destroyed during oxidation and initial concentration of tocopherols. No synergistic or antagonistic interaction was observed when α- and γ-tocopherols were added together to autooxidizing p-SFO.     

Effects of Several Factors on Viscosity of Alumina-spinel Slurries

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Effect of metal oxides on electrochemical performances of La–Mg–Ni-based alloys

Metal oxides (TiO₂, Er₂O₃ and ZnO) were added to La–Mg–Ni-based hydrogen storage alloy electrodes and their effects on the structural and electrochemical properties were studied. The charge efficiency, especially at high charge current density was greatly ameliorated, and the high rate charge capability at 1440 mA g⁻¹ increased from 85.1% (blank) to 94.1% (TiO₂), 93.3% (Er₂O₃) and 90.5% (ZnO). The high temperature dischargeability was also improved in case of TiO₂, Er₂O₃ and ZnO additives. These additives suppressed formation of Mg(OH)₂ and La(OH)₃ during charge/discharge process and therefore the cycling stability was improved. The discharge capacity retention at the 200th cycle increased from 72.9% (blank) to 79.6% (TiO₂), 87.5% (Er₂O₃) and 77.9% (ZnO).     

Effect of annealing temperature on ferroelectric electron emission of sol–gel PZT films

In this work, the influence of annealing temperature on the ferroelectric electron emission behaviors of 1.3-μm-thick sol–gel PbZr_0.52Ti_0.48O₃ (PZT) thin film emitters was investigated. The results revealed that the PZT films were crack-free in perovskite structure with columnar-like grains. Increasing annealing temperature led to the growth of the grains with improved ferroelectric and dielectric properties. The remnant polarization increased slightly from 35.3 to 39.6 μC/cm² and the coercive field decreased from the 56.4 to 54.6 kV/cm with increasing annealing temperature from 600 to 700 °C. The PZT film emitters exhibited remarkable ferroelectric electron emission behaviors at the threshold voltage above 95 V. The film annealed at 700 °C showed a relatively lower threshold voltage and higher emission current, which is related to the improved ferroelectric and dielectric properties at higher annealing temperature. The highest emission current achieved in this work was around 25 mA at the trigger voltage of 160 V.     

An Aerosol Generator for High Concentrations of 0.5–5-μm Solid Particles of Practical Monodispersity

A continuous-flow, evaporation-condensation aerosol generator has been designed to produce particles of practical monodispersity of stearic acid in concentrations of over 1 g/m³ at flow rates > 6 L/min. Pure stearic acid containing a dissolved impurity is melt-sprayed and evaporated, producing a nuclei- vapor mixture. The mixture is recondensed and then quickly quenched into spherical, solid particles of a narrow size distribution. The condenser design is a straight, insulated glass tube of 5 cm in inner diameter and of 110 cm in length. A heating and flow straightening conditioning section previous to the condenser provides a relatively flat condensation front across the tube diameter, while the insulated condenser walls in free convection create a low radial temperature gradient, both of which enhance particle monodispersity with particle geometric standard deviations < 1.25. The dynamic condenser conditions for the suppression of homogeneous nucleation were investigated as a function of the ratio of the Grashof-Prandtl numbers product to the Reynolds number.     

Effects of annealing temperature on the microstructure,optical, ferroelectric and photovoltaic properties of BiFeO3 thin films prepared by sol–gel method

Bismuth ferrite thin films were prepared via sol–gel spin-coating method and the effects of annealing temperature on microstructure, optical, ferroelectric and photovoltaic properties have been investigated. The results show that the bismuth ferrite thin films annealed at 550 °C is single phase and the grain size increases with the rise of annealing temperature. The band gap of bismuth ferrite thin films annealed at 550–650 °C is between 2.306 eV and 2.453 eV. With the rise of the annealing temperature, the remnant polarization gradually decreases and the coercive electric field increases. The short circuit photocurrent density decreases with the rise of annealing temperature, and the open circuit photovoltage and the power conversion efficiency of bismuth ferrite thin films annealed at 550 °C are higher than the thin films annealed at higher temperature.