Ferroelectric and structural instability of (Pb,Ca)TiO3 thin films prepared in an oxygen atmosphere and deposited on LSCO thin films which act as a buffer layer

Structural, microstructural and ferroelectric properties of Pb_0.90Ca_0.10TiO₃ (PCT10) thin films deposited using La_0.50Sr_0.50CoO₃ (LSCO) thin films which serve only as a buffer layer were compared with properties of the thin films grown using a platinum-coated silicon substrate. LSCO and PCT10 thin films were grown using the chemical solution deposition method and heat-treated in an oxygen atmosphere at 700 °C and 650 °C in a tube oven, respectively. X-ray diffraction (XRD) and Raman spectroscopy results showed that PCT10 thin films deposited directly on a platinum-coated silicon substrate exhibit a strong tetragonal character while thin films with the LSCO buffer layer displayed a smaller tetragonal character. Surface morphology observations by atomic force microscopy (AFM) revealed that PCT10 thin films with a LSCO buffer layer had a smoother surface and smaller grain size compared with thin films grown on a platinum-coated silicon substrate. Additionally, the capacitance versus voltage curves and hysteresis loop measurement indicated that the degree of polarization decreased for PCT10 thin films on a LSCO buffer layer compared with PCT10 thin films deposited directly on a platinum-coated silicon substrate. This phenomenon can be described as the smaller shift off-center of Ti atoms along the c-direction 〈001〉 inside the TiO₆ octahedron unit due to the reduction of lattice parameters. Remnant polarization (P_r) values are about 30 μC/cm² and 12 μC/cm² for PCT10/Pt and PCT10/LSCO thin films, respectively. Results showed that the LSCO buffer layer strongly influenced the structural, microstructural and ferroelectric properties of PCT10 thin films.     

Preparation and tunability properties of Ba(ZrxTi1−x)O3 thin films grown by a sol–gel process

Ba(Zr_xTi_1−x)O₃ (BZT) thin films were deposited via sol–gel process on LaNiO₃, as buffer layer, and Pt-coated silicon substrates. The BZT films were perovskite phase and showed a (1 0 0) preferred orientation dependent upon zirconium content. The grain size decreased and the microstructure became dense with increasing zirconium content. The addition of Zr to the BaTiO₃ lattice decreased the grain size of the crystallized films. The temperature dependent dielectric constant revealed that the thin films have relaxor behavior and diffuse phase transition characteristics that depend on the substitution of Zr for Ti in BaTiO₃. The dependence of electrical properties on film thickness has been studied, with the emphasis placed on dielectric nonlinear characteristics. Ba(Zr_0.35Ti₆₅)O₃ thin films with weak temperature dependence of tunability in the temperature range from 0 to 130 °C could be attractive materials for situations in which precise control of temperature would be either impossible or too expensive.     

Epitaxial,electro-optically active barium titanate thin films on silicon by chemical solution deposition

Recent progress in the integration of BaTiO₃ thin films with silicon has shown great promise for the development of on-chip photonic devices. However, the highest performing thin films in the literature are deposited by costly and/or complex vacuum techniques. In this study, epitaxial BaTiO₃ thin films are deposited on thin SrTiO₃ template layers on Si(001) from an alkoxide-based chemical solution under atmospheric conditions and yield an effective Pockels coefficient of 27 ± 4 pm/V for an ~85 nm film. Film crystallinity, microstructure, and defect nature are examined by X-ray diffraction and high-resolution transmission and scanning electron microscopy techniques and discussed within the context of the growth method as well as the observed electro-optical response.     

Dielectric and optical properties of electroceramic PBZNZT thin films prepared by pulsed laser deposition process

The 0.6[0.94Pb(Zn_1/3Nb_2/3)O₃ + 0.06BaTiO₃] + 0.4[0.48(PbZrO₃) + 0.52(PbTiO₃)], PBZNZT, thin films were synthesized by pulsed laser deposition (PLD) process. The PBZNZT films possess higher insulating characteristics than the PZT (or PLZT) series materials due to the suppressed formation of defects, therefore, thin-film forms of these materials are expected to exhibit superior ferroelectric properties as compared with the PZT (or PLZT)-series thin films. Moreover, the Ba(Mg_1/3Ta_2/3)O₃ thin film of perovskite structure was used as buffer layer to reduce the substrate temperature necessary for growing the perovskite phase PBZNZT thin films. The PBZNZT thin films of good ferroelectric and dielectric properties (remanent polarization P_r = 26.0 μC/cm², coercive field E_c = 399 kV/cm, dielectric constant K = 737) were achieved by PLD at 400 °C. Such a low substrate temperature technique makes this process compatible with silicon device process. Moreover, thus obtained PBZNZT thin films also possess good optical properties (about 75% transmittance at 800 nm). These results imply that PBZNZT thin films have potential in photonic device applications.     

Effect of BNBTKNN on the electrical properties of bismuth ferrite thin films

BiFeO₃/[0.93(Bi_0.50Na_0.50TiO₃)-0.05BaTiO₃-0.02K_0.50Na_0.50NbO₃] (BFO/BNBTKNN) bilayered thin films were fabricated on Pt/TiO₂/SiO₂/Si substrates without any buffer layers by a combined sol-gel and radio frequency sputtering route. Effect of BNBTKNN on electrical properties of BFO/BNBTKNN thin films was investigated. A higher phase purity and a denser microstructure are induced for the BFO/BNBTKNN bilayered thin film by using the bottom BNBTKNN layer, resulting in its lower leakage current density. Moreover, the enhancement in dielectric behavior is also demonstrated for such a bilayer, where a high dielectric constant and a low dielectric loss are obtained. The BFO/BNBTKNN bilayered thin film has an improved multiferroic behavior: 2P_r ∼ 76.8 μC/cm², 2E_c ∼ 378.1 kV/cm, 2M_s ∼ 52.6 emu/cm³, and 2H_c ∼ 453.6 Oe, together with a low fatigue rate up to ∼1 × 10⁹ switching cycles.     

Photoactivity enhancement of zinc sulfide ceramics thin films through ultrathin buffering engineering

Zinc-sulfide (ZnS) thin films 200 nm-thick with various crystal features were fabricated using RF sputtering onto patterned sapphire substrates with and without ultrathin homo-ZnS and hetero-zinc oxide (ZnO) ultrathin buffer layers (approximately 45 nm in thickness). Microstructural analyses revealed that the crystalline ZnS thin films with a columnar grain feature were deposited on the various ultrathin buffer layers-coated substrates through RF sputtering. The surface morphology of the ZnS thin films became rough and the crystal defect density of the ZnS thin films increased when the ZnS thin films were grown on the buffer layers. Comparatively, the rugged and island-like ZnO buffer layer engendered the crystal growth of the ZnS thin film with a higher degree of structural disorder than that of the crystal growth on the ZnS buffer layer. An increased crystal defect number together with the highly rugged film surface of the ZnS thin film buffered with ultrathin ZnO layers efficiently enhanced the photoactivity of the 200 nm-thick ZnS thin film in this study.     

Hydrothermal preparation of BaTiO3 thin films

In preparing BaTiO₃ thin films under hydrothermal conditions, the effects of concentrations of nutrient and mineralizer, and reaction time on crystallinity, grain size, surface roughness, and film thickness were investigated. Experiments were performed in the ranges of 0.1-1.5M BaCl₂ · 2H₂O or Ba(OH)₂ · 8H₂O and 0-1.5 M KOH with varying reaction time from 0.16 to 8 hours at 140 °C. Bimodal dispersion of crystalline grains on the surface of BaTiO₃ thin films was predicted through nucleation and crystal growth reaction. As the concentrations of nutrient and/or mineralizer increased, grain size of the thin film became smaller, but more uniform and compact. When 0.4 M Ba(OH)₂ · 8H₂O was used with 1.0 M KOH, a reaction time longer than 4 hours was required in order to fabricate BaTiO₃ thin films.     

Effect of seeding layer on orientation control of potassium niobate thin film by CSD

This paper focuses on the orientation control of the KN thin film on Si wafer by chemical solution deposition (CSD). We selected the PbO layer and PZT layers as the seeding layer in order to control the crystal orientation of the resulting KN thin film. Crystalline phase in KN thin film was identified by XRD, and the degree of c-axis orientation was calculated from XRD analysis. The resultant KN thin film was orthorhombic perovskite single phase. As a result, highly c-axis oriented thin film (about 90%) was deposited by using PbO seeding layer. The dielectric constant of the resultant KN thin film was measured by impedance analyzer. The dielectric constant of highly c-axis oriented KN thin film was compared with that of the c-axis of KN single crystal.     

Structural,ferroelectric, and optical properties of Pr-NBT-xCTO relaxor ferroelectric thin films

Sol-gel method was used to prepare the Pr³⁺ ions-doped (1-x)Na_0.5Bi_0.5TiO₃-xCaTiO₃ (Pr-NBT-xCTO) (x?=?0, 0.04, 0.06, 0.08, 0.1, 0.12, and 0.16) thin films on Pt/Ti/SiO₂/Si and fused silicon substrates. The structure phase of thin films was evolving from rhombohedral (R3c) to orthorhombic (Pnma) with increasing CTO content. Owing to the morphotropic phase boundary (MPB), the improved ferroelectric and dielectric properties were obtained at x?=?0.06–0.1. The MPB was formed from the concomitant phase of rhombohedral (R3c) and orthorhombic (Pnma). The Pr-NBT-0.08CTO thin film showed the best ferroelectric and dielectric properties, as well as strong relaxor behavior (the diffusion factor is γ?=?1.79). In addition, all the films exhibited strong red emission as excited by UV light, and wide optical band-gap (3.44–3.47?eV), which might be influenced by grain size and structural variation. Our results indicate that Pr-NBT-xCTO thin films may have potential applications in ferroelectric-luminescence multifunctional optoelectronic devices.     

Barium titanate thin films prepared on MgO (100) substrates by coating-pyrolysis process

Barium titanate (BaTiO₃) thin films were prepared on MgO (100) substrates using metal naphthenate solution by a coating-pyrolysis process. Amorphous films pyrolyzed at 470‡C were crystallized to BaTiO₃ phase by heat treatment at higher temperatures. The crystallinity and alignment of the films depended on temperature and on atmosphere during heat treatment. Epitaxial BaTiO₃ film having (100)-orientation was obtained by heat treatment at 900‡C under oxygen partial pressure of 2x 10^-4 atm. The epitaxial BaTiO₃ film had a lattice constant of 0.401₆ nm and displayed a smooth surface with some pores dispersed on the surface. By heat treatment in air, amorphous BaTiO₃ film was obtained at 900‡C or below, and textured film with less strong (100) orientation was obtained at 1,200‡C and consisted of grains with diameter about 0.3 Μ.     

Effect of surface charges on the polarization of BaTiO3 thin films investigated by UHV‐SPM

Nanostructured BaTiO₃ polar thin films are increasingly critical to the function of future multilayer ceramic capacitors and related oxide‐based electronic devices. The effect of surface charges on BaTiO₃ polarization behavior is therefore investigated by ultra‐high vacuum scanning probe microscopy (UHV‐SPM) for 3 distinct morphologies—epitaxial, polycrystalline, and nanocrystalline films. Regardless of the film morphology, Kelvin probe force microscopy reveals that BaTiO₃ thin film surfaces exhibit positive charging after contact scanning by various noble AFM probes due to the work function difference between tip and specimen. According to piezoresponse force microscopy, these positive charges uniformly stabilize downward polarized domains. However, the hysteresis and concomitant surface charging behavior are strongly sensitive to microstructure and defects. In particular, the stability and switching behavior are influenced by bulk and interfacial defect distributions and hence correlated to film deposition methods and grain size. Such morphology dependent properties for BaTiO₃ films are revealed only through UHV measurements where screening charges from the ambient can be minimized, demonstrating the importance of UHV‐SPM for understanding ferroelectric thin films and nanostructures.     

Amorphous silicon–carbon based nano-scale thin film anode materials for lithium ion batteries

The buffering effect of carbon on the structural stability of amorphous silicon films, used as an anode for lithium ion rechargeable batteries, has been studied during long term discharge/charge cycles. To this extent, the electrochemical performance of a prototype material consisting of amorphous Si thin film (∼250 nm) deposited by radio frequency magnetron sputtering on amorphous carbon (∼50 nm) thin films, denoted as a-C/Si, has been investigated. In comparison to pure amorphous Si thin film (a-Si) which shows a rapid fade in capacity after 30 cycles, the a-C/Si exhibits excellent capacity retention displaying ∼0.03% fade in capacity up to 50 cycles and ∼0.2% after 50 cycles when cycled at a rate of 100 μA/cm² (∼C/2) suggesting that the presence of thin amorphous C layer deposited between the Cu substrate and a-Si acts as a buffer layer facilitating the release of the volume induced stresses exhibited by pure a-Si during the charge/discharge cycles. This structural integrity combined with microstructural stability of the a-C/Si thin film during the alloying/dealloying process with lithium has been confirmed by scanning electron microscopy (SEM) analysis. The buffering capacity of the thin amorphous carbon layer lends credence to its use as the likely compliant matrix to curtail the volume expansion related cracking of silicon validating its choice as the matrix for bulk and thin film battery systems.     

Epitaxial Bi5Ti3FeO15 thin films on Nb-doped SrTiO3 substrates

We investigated the ferroelectric switching dynamics as well as the multiferroic and piezoelectric properties of highly a-oriented epitaxial Bi₅Ti₃FeO₁₅ (BTFO) thin films on Nb-doped SrTiO₃ single crystal substrates. The BTFO thin films favored highly a-oriented crystallinity because c-oriented crystallinity decreased under deposition conditions in which substrate temperature and thin film deposition rate were simultaneously lowered. The highly a-oriented epitaxial BTFO thin films showed the best ferroelectric properties, whereas the highly c-oriented epitaxial BTFO thin films showed the best ferromagnetic properties. In particular, the BTFO thin films in which a- and c-oriented crystallinity were properly mixed showed the best piezoelectric properties.     

Film thickness dependence of the dielectric properties of SrTiO3/BaTiO3 multilayer thin films deposited by double target RF magnetron sputtering

Four-layer SrTiO₃/BaTiO₃ thin films ((ST/BT)₄) with various thicknesses deposited on Pt/Ti/SiO₂/Si substrates at 500 °C by double target RF magnetron sputtering have been investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), profilometry, capacitance-voltage and current-voltage measurements. The XRD patterns reveal the frame formation of the sputter deposited (ST/BT)₄ with controlled modulation. The adhesion between the Pt bottom electrode layer and the BT layer is excellent. The dielectric constant of the (ST/BT)₄ multilayer thin film increases with increasing film thickness. The effects of temperature, frequency, and bias voltage on the dielectric constant of the (ST/BT)₄ multilayer thin films are discussed in detail. The leakage current density of the (ST/BT)₄ multilayer with a thickness of 450.0 nm is lower than 1.0 × 10⁻⁸ A/cm² for the applied voltage of less than 5 V, showing that the multilayer thin films with such a characteristic could be applied for use in dynamic random access memory (DRAMs) capacitors.     

Electrochemical investigation of the influence of thin SiOx films deposited on gold on charge transfer characteristics

The paper reports on the investigation of the electrochemical behavior of a thin gold film electrode coated with silicon dioxide (SiO_x) layers of increasing thickness. Stable thin films of amorphous silica (SiO_x) were deposited on glass slides coated with a 5 nm adhesion layer of titanium and 50 nm of gold, using plasma-enhanced chemical vapor deposition (PECVD) technique. Scanning electrochemical microscopy (SECM) and electrochemical impedance spectroscopy (EIS) were used to investigate the electrochemical behavior of the interfaces. In the case of SECM, the influence of the SiO_x thicknesses on the electron transfer kinetics of three redox mediators was investigated. Normalized current-distance curves (approach curves) were fitted to the theoretical model in order to find the effective heterogeneous first order rate constant (k_eff) at the sample. EIS was in addition used to confirm the diffusion barrier character of the SiO_x interlayer.     

Mixed grains and orientation-dependent piezoelectricity of polycrystalline Nd-substituted Bi4Ti3O12 thin films

Polycrystalline Bi_3.15Nd_0.85Ti₃O₁₂ (BNT) thin films were prepared on Pt/Ta/glass substrates by a pulsed laser deposition method. X-ray diffraction measurements revealed that the BNT thin films were preferentially oriented along the (117) direction although they possessed a polycrystalline structure. Good ferroelectric properties of the BNT thin film were observed with a remnant polarization of 13 μC/cm² (2 P_r ~26 μC/cm²). The fatigue resistance test exhibited that the ferroelectric polarization of the BNT thin film degraded significantly after around 10⁹ switching cycles, which can be attributed to its crystal structure. We investigated the surface morphology and ferroelectric domain structure by atomic force microscopy (AFM) and piezoresponse force microscopy (PFM), respectively. Interestingly, mixed grains consisting of long and circular shapes were observed on the BNT film surface, which corresponded to a- and c-axes orientations of crystal growth, respectively. The PFM study revealed that the piezoelectric coefficient (d₃₃) of the long grains was much larger than that of the circular grains.     

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zn_i and V_o is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques.     

Enhanced energy-storage performance of 0.94NBT-0.06BT thin films induced by a Pb0.8La0.1Ca0.1Ti0.975O3 seed layer

0.94(Na_0.5Bi_0.5TiO₃)-0.06BaTiO₃ ferroelectric thin films with and without the Pb_0.8La_0.1Ca_0.1Ti_0.975O₃ seed layer were deposited on platinum-buffered silicon substrates by using Sol–Gel process. The influence of Pb_0.8La_0.1Ca_0.1Ti_0.975O₃ seed layer and annealing temperatures on the microstructures, ferroelectric properties and energy-storage performances of the as-prepared films were investigated in details. The low annealing temperature and Pb_0.8La_0.1Ca_0.1Ti_0.975O₃ seed layer could improve the values of electric break-down field strength and P_max-P_r, which play a vital role for high recoverable energy-storage density. Owing to the high electric break-down field strength value of 3310 kV/cm, a large recoverable energy density of W=17.2 J/cm³ and a high energy efficiency of η=74.3% were obtained for the 0.94(Na_0.5Bi_0.5TiO₃)-0.06BaTiO₃ thin film with the Pb_0.8La_0.1Ca_0.1Ti_0.975O₃ seed layer, which was annealed at 450 °C.     

Morphology of semicrystalline oxyethylene/oxybutylene block copolymer thin films on mica

The morphology of as-cast and annealed thin films of four symmetric semicrystalline block copolymers on mica was investigated by tapping mode atomic force microscopy (AFM) and grazing incidence X-ray diffraction (XRD). It is found that the morphology of the thin films is dependent on chain length of oxyethylene/oxybutylene block copolymers. The as-cast thin films of the shorter E_mB_n block copolymers on mica exhibit a multi-layered lamellar structure parallel to the surface, in which the stems of the E crystals in the first half polymer layer contacting mica are parallel to the mica surface and perpendicular to the mica surface in the upper polymer layers. In contrast, the as-cast thin film of longer E₂₂₄B₁₁₄ exhibits a structure with mixed orientations of lamellar microdomains on a half polymer layer parallel to the surface. After annealing, the multi-layered structure on mica is transformed into a half-layered, densely branched structure, which is formed following a diffusion-limited aggregation mechanism, opposed to the featureless half-layered structure on silicon. Upon annealing, the upper polymer layers gradually retreat and the remaining area becomes thicker, but in contrast the first half polymer layer contacting mica becomes thinner due to wetting and the parallel orientation of the E crystal stems. The densely branched structure and the different chain orientations of the E crystal stems in the first half polymer layer contacting mica are attributed to the strong interaction between the E block and mica, as revealed by our previous work. The width of branches was employed to analyze the kinetics of secondary crystallization. It is also found that the width of the branches and the velocity of crystal front decrease as the chain length increases.     

Ferroelectric and dielectric properties of manganese-doped Na0.5Bi0.5TiO3 nanocrystalline thin films prepared by metal organic decomposition: A single-layer thickness-dependent study

2 at% Manganese-doped Na_0.5Bi_0.5TiO₃ (NBTMn) thin films with single-layer thicknesses ranging from 15 to 45 nm/l were deposited on the indium tin oxide/glass substrates by a metal organic decomposition process and spin coating technique. The influence of single-layer thickness on the crystal structure, surface morphology, insulating ability, ferroelectric and dielectric properties was mainly investigated. Compared with the other films, NBTMn film with a single-layer thickness of 30 nm/l exhibits the (110)-preferred orientation and dense structure. Also, it shows the enhanced ferroelectricity with a large remanent polarization (P_r) of 38 μC/cm² due to the preferred orientation and low leakage current density. Meanwhile, a high dielectric tunability of 39% for NBTMn with 30 nm/l can be observed by varying the measuring applied voltage and frequency. These results indicate that the suitable layer thickness is beneficial to improve the electrical performances of NBTMn thin film.