Effects of Ir Substitution and Processing Conditions on Thermoelectric Performance of p-Type Zr0.5Hf0.5Co1?xIrxSb0.99Sn0.01 Half-Heusler Alloys

A series of samples with the composition Zr_0.5Hf_0.5Co_1−x Ir _x Sb_0.99Sn_0.01 (x = 0.0 to 0.7) were synthesized by high-temperature solid-state reaction at 1173 K. High-density pellets of the powders were obtained using hot press (HP) and spark plasma sintering (SPS) techniques. The thermoelectric properties of the pellets were measured from 300 K to 750 K. Independently of the pressing conditions, all Ir-containing samples (x > 0) showed p-type semiconducting behavior. At 300 K, the electrical conductivity and thermopower of Zr_0.5Hf_0.5Co_1−x Ir _x Sb_0.99Sn_0.01 materials surprisingly increased with increasing Ir concentration. The largest electrical conductivity and thermopower values of 150 S/cm and 140 μV/K, respectively, were observed at 300 K for x = 0.7. The thermal conductivity of the synthesized materials decreased with increasing Ir content, went through a minimum value (x = 0.3), and increased thereafter with further addition of Ir. Pellets fabricated by SPS showed smaller thermal conductivity than pellets of the same composition obtained from uniaxial hot pressing. A thermal conductivity value of ∼2.0 W/m K was observed at 300 K for an SPS pellet with the com-position Zr_0.5Hf_0.5Co_0.5Ir_0.5Sb_0.99Sn_0.01. The thermal conductivity of Zr_0.5Hf_0.5-Co_1−x Ir _x Sb_0.99Sn_0.01 decreased with rising temperature, and the smallest value of ∼1.5 W/m K was observed at 750 K for the SPS specimen with x = 0.5.     

Thermoelectric Properties of Ag-Doped n-Type (Bi2?xAgxTe3)0.96?(Bi2Se3)0.04 Pseudobinary Alloys

n-Type thermoelectric powders of (Bi_2−x Ag _x Te₃)_0.96−(Bi₂Se₃)_0.04 (0 ≤ x ≤ 0.05) have been synthesized by mechanical alloying and then consolidated by spark plasma sintering. The analysis results show that the grain size of pure Bi, Te, Ag, and Se powders is decreased to about 1 μm to 0.5 μm after they are mechanically alloyed for 2 h. The power factor of bulk material increases with increasing Ag-doping content, while the trend for the lattice thermal conductivity is the opposite. Bulk (Bi_0.99Ag_0.04)₂(Te_0.96Se_0.04)₃ after milling for 12 h exhibits a higher power factor, lower thermal conductivity, and thus a higher ZT of 0.74 at 373 K.     

Thermoelectric Properties of Tix(HfyZr1?y)1?xNiSn0.998Sb0.002 Half-Heusler Ribbons

Ribbons of Ti _x (Hf _y Zr_1−y )_1−x NiSn_1−z Sb _z (x = 0.1 to 1, y = 0.1 to 0.9, z = 0, 0.002, 0.004) were prepared by spin casting and annealed for 1 h at T _a = 1000 K, 1050 K, 1073 K, and 1100 K. The crystal phase of the ribbons was investigated by x-ray diffraction analysis and transmission electron microscopy. All the ribbons consisted of a phase with a half-Heusler structure. The Seebeck coefficient, electrical conductivity, thermal conductivity, power factor, and figure of merit ZT at room temperature were clarified experimentally as a function of x, y, z, and T _a. Despite the large thermal conductivity, the power factor and figure of merit were remarkably large at x = 0.5, y = 0.5, z = 0.002, and T _a = 1073 K, because the Seebeck coefficient and electrical conductivity were large.     

Thermoelectric Properties of Pulsed Electric Current Sintered Samples of AgPb m SbSe17 (m?=?16 or 17)

Lead chalcogenide materials have drawn attention in recent years because of their outstanding thermoelectric properties. Bulk n-type materials of AgPb _m SbTe_2+m have been reported to exhibit high figure of merit, ZT, as high as 1.7 at 700?K. Recent reports have shown p-type lead selenide-based compounds with comparable ZT. The analogous material AgPb _m SbSe₁₇ shares a similar cubic rock-salt structure with PbTe-based compounds; however, it exhibits a higher melting point, and selenium is more abundant than tellurium. Using solid solution chemistry, we have fabricated cast AgPb₁₅SbSe₁₇ samples that show a peak power factor of approximately 17???W/cm?K² at 450?K. Increasing the strength of such materials is commonly achieved through powder processing, which also helps to homogenize the source materials. Pulsed electric current sintering (PECS) is a hot-pressing technique that utilizes electric current through the die and sample for direct Joule heating during pressing. The mechanisms present during PECS processing have captured significant research interest and have led to some notable improvements in sample properties compared with other densification techniques. We report the thermoelectric properties of PECS samples of AgPb _m SbSe₁₇ along with sample fabrication and processing details.     

Improved Thermoelectric Properties of Bi-M-Co-O (M = Sr,Ca) Misfit Compounds by Laser Directional Solidification

In this work, improvement of the thermoelectric properties of bulk samples due to texture developed by a directional laser-assisted solidification process (laser floating zone melting method) is reported for cobaltite materials with compositions Bi₂Sr₂Co_1.8O _y and Bi₂Ca₂Co_1.7O _y . Sample composition and microstructure have been studied using x-ray diffraction and scanning electron microscopy. Thermoelectric properties have been measured between 4 K and 300 K by simultaneous determination of electrical resistivity and thermopower. All textured samples showed remarkable increase of power factor values as compared with conventional sintered ceramics.     

Improved Thermoelectric Properties of (GeTe)90(AgySb2?yTe3?y)10 by Tuning the Ag-to-Sb Ratio

(GeTe)₉₀(Ag _y Sb_2−y Te_3−y )₁₀ (y = 0.6, 0.7, 0.8, 1.0) compounds were prepared by combining melting and hot pressing, and the thermoelectric properties were studied over the temperature range of 300 K to 770 K. Powder x-ray diffraction results revealed that all the samples were the rhombohedral phase with space group R3m. The electrical conductivity of samples decreased with temperature, while the Seebeck coefficient increased. The thermal conductivity of all the samples was very low, especially for those with the lower y values. High ZT values above 1.6 were obtained for the samples with y = 0.6, 0.7, and 0.8.     

W6+掺杂Pb(Sc,Nb)O3-Pb(Hf,Ti)O3陶瓷的制备和性能研究

该文采用传统固相反应法制备了W⁶⁺掺杂的0.07Pb(Sc_0.5Nb_0.5)O₃-0.93Pb(Hf_0.47Ti_0.53)O₃(PSN-PHT)陶瓷,详细分析了样品的晶体结构、压电和介电性能。实验结果表明,W⁶⁺掺杂可以提高钙钛矿结构中三方相的含量,有效增加晶粒尺寸,提高压电系数。当W⁶⁺掺杂量(摩尔分数)为1.0%时,样品具有最佳的压电和介电性能,即d₃₃=585 pC/N,T_C=323℃,ε_r=2 088。同时,样品的d₃₃在200℃去极化温度下仍保持570 pC/N的高值,且经过1 080 min保温后,压电常数略微降低,此时d₃₃仍可达到537 pC/N,变化仅为5.7%。上述结果表明,W⁶⁺掺杂不仅可以提高压电系数,同时也可增强陶瓷的温度稳定性,使该陶...     

Synthesis,Structure and Electrical Properties of(SnO2)x(In2O3)1?x(x=0.5–1) Nanocomposites

The experimental results of synthesizing thin films (<1 μm thick) of (SnO₂) _x (In₂O₃)_{1 − x} (x = 0.5–1 wt) nanocomposites fabricated by high-frequency magnetron sputtering of metal-oxide targets in a controlled Ar + O₂ atmosphere are presented. The films, deposited on hot substrates (400°C), are studied by the X-ray diffraction analysis, atomic-force microscopy, and optical and electrical methods. The effect of the synthesis conditions and film composition on the size of crystalline grains, band gap, and the concentration and mobility of free charge carriers was determined. It is shown that films of the composition (SnO₂) _x (In₂O₃)_{1 − x} with x = 0.9 are the most promising for applications in gas sensorics.     

Natural Microstructure and Thermoelectric Performance of (GeTe)80(AgySb2?yTe3?y)20

Thermoelectric (TE) materials (GeTe)₈₀(Ag _y Sb_2−y Te_3−y )₂₀ (y = 0.6, 0.8, 1.0, 1.2, and 1.4) were prepared, and their TE properties and microstructure studied in this work. Due to their relatively low thermal conductivity and proper carrier concentration, high ZT values were obtained for all samples except for y = 1.4. Using transmission electron microscopy, twins, antiphase domains, and low-angle grain boundaries were observed throughout the sample with y = 1.2. Nanoscale regions with double atomic spacing were detected. These regions and the matrix were coherent without obvious mismatch. The relationship between high ZT values and microstructure is discussed.     

Properties and structure of (As2Se3)1 ? z (SnSe2) z ? x (Tl2Se) x and (As2Se3)1 ? z (SnSe) z ? x (Tl2Se) x glasses

Tin is stabilized in the bivalent and tetravalent states in the structure of (As₂Se₃)_{1 − z} (SnSe₂) _{z − x} (Tl₂Se) _x and (As₂Se₃)_{1 − z} (SnSe) _{z − x} (Tl₂Se) _x glasses. The presence of bivalent tin in the structural network of a glass does not give rise to extrinsic conductivity. Dependences of density, microhardness, and the glass-transition temperature on the composition of the glasses are interpreted using a model according to which the structure of the glasses is composed of structural units that correspond to As₂Se₃, AsSe, TlAsSe₂, Tl₂Se, SnSe, and SnSe₂ compounds. Original Russian Text ? G.A. Bordovsky, A.V. Marchenko, E I. Terukov, P.P. Seregin, T.V. Likhodeeva, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 11, pp. 1353–1356.     

面向超声压电换能器的MnO2掺杂Pb(Sc,Nb)O3-Pb(Hf,Ti)O3陶瓷研究

该文采用固相反应法成功合成了高性能MnO₂掺杂的0.07Pb(Sc_1/2Nb_1/2)O₃-0.93Pb(Hf_0.47Ti_0.53)O₃(PSN-PHT)陶瓷,并从微观形貌、相结构和电学性能等方面综合分析了PSN-PHT陶瓷性能提高的原因。实验结果表明,MnO₂的引入改变了PSN-PHT陶瓷的相结构,使其铁电四方相含量降低,并导致准同型相界(MPB)的出现,同时增大了晶粒尺寸并使晶粒均匀化。当MnO₂掺杂量(摩尔分数)为0.8%时,样品达到最佳性能,其d₃₃、k_p、T_C、Q_m和tan δ分别为450 pC/N、0.65、348 ℃、1 200和0.003 2。该组分样品的温度稳定性远高于商用PZT-5和PZT-8陶瓷,故其在压电陶瓷换能器领域有着巨大的应用前景。     

Thermoelectric Properties of Yb1−x (Er,Lu) x Al3 Solid Solutions

Ytterbium trialuminide (YbAl₃) has one of the largest thermoelectric power factors of known materials below room temperature, making it a material of interest for low-temperature thermoelectric devices. However, the high thermal conductivity, which is due to a combination of a large electronic thermal conductivity and a moderately large lattice thermal conductivity, is detrimental to the figure of merit. Substitution of different atoms on the Yb site was performed in order to assess their ability to favorably alter the electronic structure and/or reduce the lattice thermal conductivity. We have synthesized and studied the thermoelectric properties of the solid solutions of YbAl₃ with ErAl₃ and LuAl₃. Results for electrical conductivity, thermal conductivity, and Seebeck coefficient for several of these solid solutions over the temperature range of 80 K to 300 K are reported. Although most substituted samples are driven toward a metallic state, we find that for some compositions the figure of merit is enhanced relative to pure YbAl₃.     

白光LEDs用(Ba/Sr/Ca)2.9Ce(PO4)3:0.1Eu2+的发光特性

采用高温固相法制备了(Ba/Sr/Ca)_2.9Ce(PO₄)₃:0.1Eu²⁺系列荧光粉,研究了材料的发光特性。在400 nm光激发下,增大x值,Ba_2.9-xSr_xCe(PO₄)₃:0.1Eu²⁺的主发射峰由515 nm红移至540 nm,色坐标从(0.312,0.607)变到(0.376,0.580);随着y值的增大,Ba_2.9-yCa_yCe(PO₄)₃:0.1Eu²⁺的主发射峰由515 nm红移到553 nm,色坐标从(0.312,0.607)变到(0.427,0.535),随z值的增大,Sr_2.9-zCa_zCe(PO₄)₃:0.1Eu²⁺的主发射峰值由540 nm红移...     

白色荧光粉Gd2(MoO4)3:Dy3+,Tm3+的制备及发光性能

采用高温固相法合成了一系列Gd₂(MoO₄)₃:D y³⁺, Tm³⁺白色荧光粉。通过XRD衍射、荧光光谱分析对荧光粉的物相结构以及发光性能进 行了研究,且通过色坐标监测样品的发 光颜色。发射光谱显示荧光粉Gd2－x(MoO₄)₃:xDy 3+在387nm激发下,Dy³⁺的²F₉→⁶H15/2跃 迁的蓝光发射及²F₉→⁶H13/2跃迁的黄光发射最强,随着Dy³⁺浓度增加 ,色坐标由白光向黄 光转移。在Gd₂(MoO₄)₃:Dy³⁺,Tm³⁺的发射光谱中,在361nm激发下,可以同时看到Dy³⁺的 黄光发射和Tm³⁺的蓝光发射,即Dy³⁺的²F9/2→⁶H13/2黄光 跃迁和Tm³⁺的¹D₂→³F₄蓝光跃 迁,因此,通过调节Dy³⁺,Tm³⁺的浓度可以使样品发出白光。当Dy³⁺浓 度为12%,Tm³⁺ 浓度为7～14%时,样品皆在白光区。当Dy³⁺,Tm³⁺浓度均为12%时,样品的色 坐标为(0.338,0.329 )最接近标准白光(0.33)。同时,在 Dy³⁺与Tm³⁺共掺的体系中,可以看到Tm³⁺向Dy³⁺的能量传递。