Optical properties of GaP/GaNP core/shell nanowires: a temperature-dependent study

Recombination processes in GaP/GaNP core/shell nanowires (NWs) grown on Si are studied by employing temperature-dependent continuous wave and time-resolved photoluminescence (PL) spectroscopies. The NWs exhibit bright PL emissions due to radiative carrier recombination in the GaNP shell. Though the radiative efficiency of the NWs is found to decrease with increasing temperature, the PL emission remains intense even at room temperature. Two thermal quenching processes of the PL emission are found to be responsible for the degradation of the PL intensity at elevated temperatures: (a) thermal activation of the localized excitons from the N-related localized states and (b) activation of a competing non-radiative recombination (NRR) process. The activation energy of the latter process is determined as being around 180 meV. NRR is also found to cause a significant decrease of carrier lifetime.     

Improved antioxidative and mechanical properties of SiC coated C/C composites via a SiO2-SiC reticulated layer

To improve the oxidation resistances of SiC coated C/C composites by a pack cementation (PC) method at high temperature and alleviate the siliconization erosion of molten silicon on C/C substrate during the preparation of SiC coating, a SiO₂-SiC reticulated layer with SiC nanowires was pre-prepared on C/C composites through combined slurry painting and thermal treatment before the fabrication of SiC coating. The presence of porous SiO₂-SiC layer with SiC nanowires was beneficial to fabricate a compact and homogeneous SiC coating resulting from synergistic effect of further reaction between SiO₂ and pack powders and the reinforcement of SiC nanowires. Therefore, the results of thermal shock and isothermal oxidation tests showed that the mass loss of modified SiC coating was only 0.02 % after suffering 50-time thermal cycles between room temperature and 1773 K and decreased from 5.95 % to 1.08 % after static oxidation for 49.5 h in air at 1773 K. Moreover, due to the blocking effect of SiO₂-SiC reticulated layer on siliconization erosion during PC, the flexural strength of SiC coated C/C composites with SiO₂-SiC reticulated layer increased by 64.8 % compared with the untreated specimen.     

Optical assessment of silicon nanowire arrays fabricated by metal-assisted chemical etching

Silicon nanowire (SiNW) arrays were prepared on silicon substrates by metal-assisted chemical etching and peeled from the substrates, and their optical properties were measured. The absorption coefficient of the SiNW arrays was higher than that for the bulk silicon over the entire region. The absorption coefficient of a SiNW array composed of 10-μm-long nanowires was much higher than the theoretical absorptance of a 10-μm-thick flat Si wafer, suggesting that SiNW arrays exhibit strong optical confinement. To reveal the reason for this strong optical confinement demonstrated by SiNW arrays, angular distribution functions of their transmittance were experimentally determined. The results suggest that Mie-related scattering plays a significant role in the strong optical confinement of SiNW arrays.     

Enhancement of the microwave absorption properties of PyC-SiCf/SiC composites by electrophoretic deposition of SiC nanowires on SiC fibers

The employment of coating technique on the silicon carbide fibers plays a pivotal role in preparing SiC fiber-reinforced SiC composites (SiC_f/SiC) toward electromagnetic wave absorption applications. In this work, SiC nanowires (SiCNWs) are successfully deposited onto the pyrolytic carbon (PyC) coated SiC fibers by an electrophoretic deposition method, and subsequently densified by chemical vapor infiltration to obtain SiCNWs/PyC-SiC_f/SiC composites. The results reveal that the introduction of SiCNWs could markedly enhance the microwave absorption properties of PyC-SiC_f/SiC composites. Owing to the increasing of SiCNWs loading, the minimum reflection loss of composites raises up to −58.5 dB in the SiCNWs/PyC-SiC_f/SiC composites with an effective absorption bandwidth (reflection loss ≤ −10 dB) of 6.13 GHz. The remarkable enhancement of electromagnetic wave absorption performances is mainly attributed to the improved dielectric loss ability, impedance matching and multiple reflections. This work provides a novel strategy in preparing SiC_f/SiC composites with excellent electromagnetic wave absorption properties.     

Mechanical properties of SiCp/Al2O3 ceramic matrix composites prepared by directed oxidation of an aluminum alloy

Silicon carbide particulate reinforced alumina matrix composites were fabricated using DIrected Metal OXidation (DIMOX) process. Continuous oxidation of an Al-Si-Mg-Zn alloy with appropriate dopants along with a preform of silicon carbide has led to the formation of alumina matrix surrounding silicon carbide particulates. SiC_p/Al₂O₃ ceramic matrix composites fabricated by the DIMOX process, possess enhanced mechanical properties such as flexural strength, fracture toughness and wear resistance, all at an affordable cost of fabrication. SiC_p/Al₂O₃ matrix composites were investigated for mechanical properties such as flexural strength, fracture toughness and hardness; the composite specimens were evaluated using standard procedures recommended by the ASTM. The SiC_p/Al₂O₃ ceramic matrix composites with SiC volume fractions from 0.35 to 0.43 were found to possess average bend strength in range 158-230 MPa and fracture toughness was found to be in range of 5.61-4.01 MPa√m. The specimen fractured under three-point loading as observed under scanning electron microscope was found to fail in brittle manner being the dominant mode. Further the composites were found to possess lower levels of porosity, among those prepared by DIMOX process.     

Optical properties of group-I-doped ZnO nanowires

Undoped and group-I elements doped ZnO nanowires were synthesized using a thermal evaporation method. Field emission scanning electron microscopy (FESEM) results showed that, the undoped ZnO nanowires were ultra-long with uniform diameters. On the other hand, the length of the doped ZnO nanowires was in the range of some hundred of nanometers. X-ray diffraction (XRD) patterns clearly indicated hexagonal structures for all of the products. X-ray photoelectron spectroscopy (XPS) studies confirmed the oxidation states of Li, Na, K, in the ZnO lattice. An asymmetric O 1s peak indicated the presence of oxygen in an oxide layer. The effect of doping on the optical band-gap and crystalline quality was also investigated using photoluminescence (PL), UV–vis, and Raman spectrometers. The Raman spectra of the products indicated a strong E₂ (high) peak. The PL spectra exhibited a strong peak in the ultraviolet (UV) region of the electromagnetic spectrum for all of the ZnO nanowires. The UV peak of the doped ZnO nanowires was red-shifted compared to the undoped ZnO nanowires. In addition, the UV–vis spectra of the samples showed similar results compared to the PL results.     

Synthesis of Al2O3 nanowires by heat-treating Al4O4C in a carbon-containing environment

A novel route was developed for the synthesis of Al₂O₃ nanowires by heat-treating Al₄O₄C via Si atom doping in a furnace with a carbon heater. The nanowires had dimensions of 20–60 nm in diameter and a few hundred microns in length, and were tunable by adjusting the heating temperature. Al₂O₃ nanowires exhibited a curved, or twisted, structure and the interface of the bending part had a defective microstructure. The study of their growth mechanism indicates that the Al₂O₃ nanowires grew by a vapour–liquid–solid (VLS) growth process.     

显微结构对Si_3N_4(Si_2ON_2)结合SiC质棚板性能的影响

通过X射线衍射、扫描电镜、压汞议、立体显微镜等检测手段,对Si3N4(Si2ON2)结合SiC质棚板的显微结构进行了剖析,揭示了显微结构对SiC质棚板宏观性能的影响。认为结合相的抗氧化性及氧化“釉层”的稳定性是决定棚权使用寿命的关键;气孔结构及分布是影响Si3N4(Si2ON2)结合棚极热震稳定性的重要因素。     

Paramagnetic Ho2O3 nanowires,nano-square sheets,and nanoplates

The morphology control of holmium oxide (Ho₂O₃) nanostructures has rarely been reported. In the present study, uniform Ho₂O₃ nanowires, nano-square sheets, and nanoplates were synthesized via the hydrothermal method and were characterized using scanning electron microscopy, high-resolution transmission electron microscopy, Fourier-transform infrared spectroscopy, thermogravimetric analysis, ultraviolet–visible–near-infrared absorption, and X-ray photoelectron spectroscopy. The morphology was observed to be composed of different crystal phases and Ho complexes, but it changed to the same cubic Ho₂O₃ crystal phase upon high-temperature thermal treatment. Paramagnetic properties were obtained and discussed for the three different morphologies mentioned above. The newly reported morphologies and the physicochemical properties reported herein will widen the application scope of Ho oxide materials.     

Effect of in situ grown SiC nanowires on microstructure and mechanical properties of C/SiC composites

Hexagonal-shaped SiC nanowires were in situ formed in C/SiC composites with ferrocene as catalyst in the densification process of polymer impregnation and pyrolysis. The effect of SiC nanowires on microstructure and properties of the composites were studied. The results show that the in situ formed SiC nanowires were hexagonal, mostly with diamer of about 250 nm, and grew by the vapor–liquid–solid (VLS) mechanism. The C/SiC composite with nanowires shows higher bulk density and flexural strength than the one with no SiC nanowires, and the high temperature flexural strength behavior of C/SiC composites with SiC nanowires was evaluated.     

Mechanical properties of sintered ZrB2-SiC ceramics

ZrB₂ ceramics containing 10-30 vol% SiC were pressurelessly sintered to near full density (relative density >97%). The effects of carbon content, SiC volume fraction and SiC starting particle size on the mechanical properties were evaluated. Microstructure analysis indicated that higher levels of carbon additions (10 wt% based on SiC content) resulted in excess carbon at the grain boundaries, which decreased flexure strength. Elastic modulus, hardness, flexure strength and fracture toughness values all increased with increasing SiC content for compositions with 5 wt% carbon. Reducing the size of the starting SiC particles decreased the ZrB₂ grain size and changed the morphology of the final SiC grains from equiaxed to whisker-like, also affecting the flexure strength. The ceramics prepared from middle starting powder with an equiaxed SiC grain morphology had the highest flexure strength (600 MPa) compared with ceramics prepared from finer or coarser SiC powders.     

Electrical and thermal properties of SiC-Zr2CN composites sintered with Y2O3-Sc2O3 additives

SiC-Zr₂CN composites were fabricated from β-SiC and ZrN powders with 2 vol% equimolar Y₂O₃-Sc₂O₃ additives via conventional hot pressing at 2000 °C for 3 h in a nitrogen atmosphere. The electrical and thermal properties of the SiC-Zr₂CN composites were investigated as a function of initial ZrN content. Relative densities above 98% were obtained for all samples. The electrical conductivity of Zr₂CN composites increased continuously from 3.8 × 10³ (Ωm)⁻¹ to 2.3 × 10⁵ (Ωm)⁻¹ with increasing ZrN content from 0 to 35 vol%. In contrast, the thermal conductivity of the composites decreased from 200 W/mK to 81 W/mK with increasing ZrN content from 0 to 35 vol%. Typical electrical and thermal conductivity values of the SiC-Zr₂CN composites fabricated from a SiC-10 vol% ZrN mixture were 2.6 × 10⁴ (Ωm)⁻¹ and 168 W/m K, respectively.     

煅烧温度对Al2O3-SiC-Si材料相组成、结构与性能的影响

以82%(质量分数,下同)的电熔白刚玉、5%的α-Al2O3微粉、5%的SiC细粉和8%的Si粉为原料,以纸浆废液为结合剂,在埋炭条件下分别于1100、1200、1300、1400和1500℃煅烧制备了Al2O3-SiC-Si材料,并研究了煅烧温度对此材料常温物理性能、热态抗折强度、抗热震性、抗氧化性的影响,以及材料在煅烧过程中的相组成和显微结构变化。结果表明:1)1100℃烧后,有少量SiC纤维生成;1200℃烧后,大量原位生成的SiC纤维穿插在刚玉骨架结构中,SiC纤维随煅烧温度的升高而长大,且其生成量也增加;在1300℃时,开始生成SiAlON;1400℃时,单质硅完全反应。2)随煅烧温度的提高,Al2O3-SiC-Si材料的常温性能和高温强度都有所提高;1200℃烧后,材料已具有优异的抗热震性和抗氧化性,随煅烧温度的升高,材料保持良好的抗热震性和抗氧化性。     

Effect of additives on slip casting rheology,microstructure and mechanical properties of Si3N4/SiC composites

The SiC/Si₃N₄ composites were fabricated with sintering process. To produce SiC/Si₃N₄ composite components, slurry mixtures containing Si/SiC powders were used by the slip casting method. In order to investigate the effect of dispersants and additives on the rheological properties and the body casted, slurries with concentration of 70% solid weight were prepared. It included a mixture of silicon and silicon carbide with weight ratios of 30 wt% and 70 wt%, respectively, and various weight percentages of Ball clay as lubricant and Tiron (sodium salt of benzene disulfonic acid) as dispersant at pH value of 7. After preparing the green bodies by slip casting method by using plaster mold, the samples were sintered at 1450 °C inside an atmospheric-controlled furnace under a pressure of 0.12 MPa of nitrogen gas for 2 h. By examining the rheological properties of the slurry and the sintering properties, it was concluded that the best slurry was obtained in terms of viscosity, density, porosity and strength using 5 wt% Ball clay and 0.5 wt% Tiron. Phase transformations, microstructure and morphology of the sintered specimens were accomplished by Field Emission Scanning Electron Microscopy (FESEM) examination and X-ray diffraction experimental analysis. XRD and FESEM results demonstrated that the composite fabricated by slurry containing 5 wt% Ball clay and 0.5 wt% Tiron had the least porosity without SiO₂ phase.     

Seamless joining of silicon carbide ceramics through an sacrificial interlayer of Dy3Si2C2

A ternary carbide Dy₃Si₂C₂ coating was fabricated on the surface of SiC through a molten salt technique. Using the Dy₃Si₂C₂ coating as the joining interlayer, seamless joining of SiC ceramic was achieved at temperature as low as 1500 °C. Phase diagram calculation indicates that seamless joining was achieved by the formation of liquid phase at the interface between Dy₃Si₂C₂ and SiC, which was squeezed out under pressure and continuously consumed by the joining interlayer. This work implies the great potential of the family of ternary rare-earth metal carbide Re₃Si₂C₂ (Re = Y, La-Nd) as the sacrificial interlayer for high-quality SiC joining.     

Transformation of CaCO3 to single crystalline micro/nanowires

Single crystalline CaCO₃ micro-nanowires were grown from the solution using poly-vinyl alcohol (PVA) to direct crystal growth and SiO₂ nanoparticles acting as seeds for the growth of amorphous CaCO₃. The aragonite and calcite micro/nanowire, diameter ranging from 70 to 700 nm, were transformed mostly from rhombohedral calcite and vaterite. The micro/nanowires or spicules grown on glass substrate had lengths ranging from 10 to 50 μm and the growth direction showed no orientational relationship to substrate. Without the use of either SiO₂ or PVA, there was no formation of either the amorphous CaCO₃ or the micro/nanowires or spicules.     

Synthesis and properties of self-assembled ultralong core-shell Si3N4/SiO2 nanowires by catalyst-free technique

Self-assembled ultralong Si₃N₄/SiO₂ nanowires (SiNNWs) with core-shell structure are prepared by air jet-spinning followed by high-temperature calcination employing low-cost fumed nano silica and industrial polyacrylonitrile as raw materials. Without using metal catalysts or reductive atmosphere, Si₃N₄/SiO₂ nanowires are generated through autocatalysis and self-assembly. The ultralong SiNNWs are uniform and continuous throughout the entire length with a 3–4 nm amorphous SiO₂ shell layer on surface of the Si₃N₄. The diameter of the SiNNWs is about 80–200 nm with the length being at centimeter level and the main component of the SiNNWs is the standard hexagonal cell of α-Si₃N₄. Moreover, the photoluminescence spectrum of SiNNWs exhibits an intense blue-green light emission at room temperature. The self-assembly mechanism of the SiNNWs is discussed.     

Synthesis,optical and electrochemical properties of ZnO nanowires/graphene oxide heterostructures

Large-scale vertically aligned ZnO nanowires with high crystal qualities were fabricated on thin graphene oxide films via a low temperature hydrothermal method. Room temperature photoluminescence results show that the ultraviolet emission of nanowires grown on graphene oxide films was greatly enhanced and the defect-related visible emission was suppressed, which can be attributed to the improved crystal quality and possible electron transfer between ZnO and graphene oxide. Electrochemical property measurement results demonstrated that the ZnO nanowires/graphene oxide have large integral area of cyclic voltammetry loop, indicating that such heterostructure is promising for application in supercapacitors.     

硅树脂的绝缘性及耐热性

以一甲基硅氧烷低聚物和二甲基硅氧烷低聚物为原料,加入适量的室温固化性能调节剂,在催化剂作用下合成了硅树脂;研究了催化剂种类对硅树脂性能的影响,并研究了耐热性、固化性能与绝缘性能的关系。结果表明：以自制催化剂制得的硅树脂的绝缘性能优于以盐酸为催化剂制得的硅树脂的绝缘性能,且不需中和、洗涤,简化了生产工艺;选用两种聚甲基硅氧烷低聚物制得的硅树脂,既可常温固化,也可加温固化,其耐热性较由甲基烷氧基硅烷单体聚合的硅树脂高;固化完全的硅树脂漆膜在200℃下老化30min后,绝缘电阻可保持在1000MΩ,同时还具有良好的附着性和硬度,且无毒。     

Preparation and characterization of Bi2Se3 nanowires by electrodeposition

The electrodeposition of Bi₂Se₃ nanowires on an anodic aluminum oxide template was investigated by cyclic voltammetry in a tartaric acid aqueous solution. The electrochemical behavior of the Bi₂Se₃ nanowires in the electrolytic solution was also investigated using cyclic voltammetry, and the underpotential deposition mechanism of the Bi₂Se₃ nanowires was determined. According to the cyclic voltammetric curves, −0.20 V vs. SCE (saturated calomel electrode) was chosen as the deposition potential of the Bi₂Se₃ nanowires. The ratio of Bi to Se is nearly 2:3, verified by energy-dispersive X-ray spectroscopy and with the addition of surfactant. X-ray diffraction, scanning electron microscopy, selected-area electron diffraction and high-resolution transmission electron microscopy indicate that annealing can improve the crystallinity and chemical composition of Bi₂Se₃ nanowires. Surfactant can also improve the surface morphology and composition of the Bi₂Se₃ nanowires.