Mössbauer study of amorphous alloys irradiated with energetic heavy ions

Mössbauer spectroscopy was applied to study radiation damage in amorphous alloys irradiated with ⁴⁰Ar ($\text{E = 225}\text{MeV}$) or ¹³²Xe ($\text{E = 120}\text{MeV}$) ions at room temperature. In the magnetically split Mössbauer spectra dose dependent decreases of the intensity of the 2nd and 5th lines as well as of the average hyperfine magnetic field were observed. The changes were also analysed using the hyperfine field distribution obtained from the spectra. The results are interpreted in terms of defect creation and structural changes of short range order of irradiated amorphous alloys.     

Mechanical properties of cubic zirconia irradiated with swift heavy ions

The modifications of the mechanical properties of cubic (yttria-stabilized) zirconia induced by swift heavy ion irradiation are investigated. Polycrystalline pellets were irradiated at room temperature with 940 MeV Pb ions at the GANIL accelerator in Caen at fluences ranging from 5 × 10¹¹ to 4 × 10¹³ cm⁻². The microhardness and the fracture toughness of irradiated YSZ were studied by Vickers micro-indentation. Although YSZ is damaged by irradiation, an increase of the microhardness and fracture toughness with increasing ion fluence is observed. A strengthening of YSZ, associated with residual compressive stresses induced in the surface layer by irradiation, explain these results.     

Electrical properties of silicon diodes with pn junctions irradiated with Au swift heavy ions

Electrical properties of silicon diodes with p⁺n junctions irradiated with ¹⁹⁷Au⁺²⁶ swift heavy ions (energy E = 350 MeV, fluences of 10⁷ cm⁻² and 10⁸ cm⁻²) and silicon diodes irradiated with electrons (energy E = 3.5 MeV, fluences of 10¹⁵ cm⁻², 5 × 10¹⁵ cm⁻² and 10¹⁶ cm⁻²) have been investigated. Frequency dependences of the impedance, current-voltage characteristics and switching characteristics of these devices have been studied. Irradiation of the diodes with ¹⁹⁷Au⁺²⁶ ions at a fluence of 10⁸ cm⁻² leads to the formation of a quasi-continuous layer of irradiation-induced defects that enable a combination of characteristics such as a reverse resistance recovery time and direct voltage drop that are better than those for electron-irradiated diodes. Still, the irradiation of high-energy ions results in an increase in recombination currents that are larger than those obtained with electron irradiation, and causes more complicated frequency dispersion of the diode parameters.     

Inactivation cross sectiopn of yeast cells irradiated by heavy ions

Inactivation cross sections for haploid yeast cell strain 211a have been calculated as 1-ht detector based on the track theory in an extended target mode and a numerical calculation of radial dose distribution.In the calculations,characteristic dose D0 is a fitted parameter which is obtained to be 42Gy,and “radius” of hypothetical target a0 is chosen to be 0.5μm which is about the size of nucleus of yeast cells for obtaining an overall agreement with experimental cross sections.The results of the calculations are in agreement with the experimental data in igh LEF(linear energy transfer)including the thindown region.     

Microstructure evolution and degradation mechanisms of reactor internal steel irradiated with heavy ions

Structure evolution and degradation mechanisms during irradiation of 18Cr-10Ni-Ti steel (material of VVER-1000 reactor internals are investigated). Using accelerator irradiations with Cr³⁺ and Ar⁺ ions allowed studying effects of dose rate, different initial structure state and implanted ions on features of structure evolution and main mechanisms of degradation including low temperature swelling and embrittlement of the 18Cr-10Ni-Ti steel. It is shown that differences in dose rate at most irradiation temperatures mainly exert their influence on the duration of the swelling transient regime. Calculations of possible transmutation products during irradiation of this steel in a VVER-1000 spectrum were performed. It is shown that gaseous atoms (He and H), which are generated simultaneously with radiation defects, stabilize the elements of radiation microstructure and influence the swelling. The nature of deformation under different temperatures of irradiation and of mechanical testing is investigated. It is shown that the temperature sensitivity of swelling behaviour in the investigated steel, with different initial structures can be connected with the dynamic behaviour of point defect sinks.     

Structural changes in anatase TiO2 thin films irradiated with high-energy heavy ions

In order to investigate possible structural changes due to high-density electronic excitation, anatase TiO₂ thin film specimens were irradiated with 230 MeV ¹³⁶Xe¹⁵⁺ ions and 200 MeV ¹⁹⁷Au¹³⁺ ions. X-ray diffraction (XRD) patterns were measured before and after irradiation. The intensity of the XRD peak assigned to the (0 0 4) planes of anatase TiO₂ decreases in an exponential manner as a function of ion-fluence. This result can be explained by the formation of the cylindrical damaged regions (i.e. ion tracks) with diameters of 9.6 and 16.3 nm for 230 MeV Xe and for 200 MeV Au ion irradiations, respectively. The difference in the track diameter between Xe ion irradiation and Au ion irradiation can be attributed to the difference in the electronic stopping power (and to the ion-velocity effect, if any). For 200 MeV Au ion irradiation, splitting of the (0 0 4) peak is observed. The original (0 0 4) TiO₂ peak remains in the same position, but the new peak shifts to higher angles as fluence increases.     

Failure mechanisms of AlGaN/GaN HEMTs irradiated by high-energy heavy ions with and without bias

Gallium nitride （Ga N）-based devices have significant potential for space applications.However,the mechanisms of radiation damage to the device,particularly from strong ionizing radiation,remains unknown.This study investigates the effects of radiation on p-gate Al Ga N/Ga N high-electron-mobility transistors （HEMTs）.Under a high voltage,the HEMT leakage current increased sharply and was accompanied by a rapid increase in power density that caused\"thermal burnout\"of the devices.In addition,a burnout signature appeared on the surface of the burned devices,proving that a single-event burnout effect occurred.Additionally,degradation,including an increase in the on-resistance and a decrease in the breakdown voltage,was observed in devices irradiated with high-energy heavy ions and without bias.The latent tracks induced by heavy ions penetrated the heterojunction interface and extended into the Ga N layer.Moreover,a new type of N₂ bubble defect was discovered inside the tracks using Fresnel analysis.The accumulation of N₂ bubbles in the heterojunction and buffer layers is more likely to cause leakage and failure.This study indicates that electrical stress accelerates the failure rate and that improving heat dissipation is an effective reinforcement method for Ga N-based devices.     

Anisotropy of disorder accumulation and recovery in 6H-SiC irradiated with Au ions at 140 K

Single crystal 〈0 0 0 1〉-oriented 6H-SiC was irradiated with Au²⁺ ions to fluences of 0.032, 0.058 and 0.105 ions/nm² at 140 K and was subsequently annealed at various temperatures up to 500 K. The relative disorder on both the Si and C sublattices has been determined simultaneously using in situ D⁺ ion channeling along the 〈0 0 0 1〉 and 〈〉 axes. A higher level of disorder on both the Si and C sublattices is observed along the 〈〉. There is a preferential C disordering and more C interstitials are aligned with 〈0 0 0 1〉. Room-temperature recovery along 〈〉 occurs, which is associated with the 〈0 0 0 1〉-aligned interstitials that annihilate due to close-pair recombination. Disorder recovery between 400 and 500 K is primarily attributed to annihilation of interstitials that are misaligned with 〈0 0 0 1〉 and to epitaxial crystallization. Effects of stacking order in SiC on disorder accumulation are insignificant; however, noticeable differences of low-temperature recovery in Au²⁺-irradiated 6H-SiC and 4H-SiC are observed.     

12C6+重离子辐照胡麻种子初步研究

本文研究了6×108 cm-2、1.8×109 cm-2和3.6×109 cm-2的12C6 重离子束辐照对胡麻种子M1代生物学性状和DNA分子多态性等方面的影响.6×108 cm-2辐照处理可引起胡麻发芽率提高,促进植株株高,增强花粉活力.同时辐照处理使胡麻种子千粒重和含油量有不同程度提高,辐射剂量越高,两者数值越大,3.6×109cm-2辐射剂量的胡麻种子千粒重和含油量与对照组的相比分别高出了16.5%和19.9%,此外在此剂量处发现了花粉发生了形态变化.辐照处理对胡麻DNA分子也产生了影响,筛选出的14个随机引物可以扩增出清晰、稳定、重复性好的DNA片段,有52个是多态性DNA片段,比率为52.5%.     

Trapping of energetic hydrogen ions in reactive metals

A model is proposed to describe the trapping of a beam of energetic ions of hydrogen isotopes by targets of reactive metals in which the incident ions dissolve exothermically. The model considers the ions free to diffuse inside the metal, and to escape from the surface at a rate determined from the known solubility data.It has been shown that in the case of semi-infinite geometry the trapping efficiency can be expressed in analytic form as a function of dose. However, in the two dimensional case appropriate for beam experiments, radial diffusion becomes important and a numerical solution has been found to be necessary. The model has been compared with experimental results on the trapping of 18 keV deuterons by targets of Nb, Zr, Ti and Pd in the temperature range 230–1000 K and in general good agreement has been obtained.     

12C6+离子束照射不同肿瘤细胞显示重离子治疗癌症的明显优势

通过观察两种人恶性肿瘤细胞(人肝癌细胞SMMC-7721和人黑色素瘤细胞A375)对高LET12C6 离子和γ射线辐照的敏感性及其差异,考察重离子治疗肿瘤的可行性及优势.以这两种体外培养的来源于人体不同组织的具有高辐射抗性的恶性肿瘤细胞为实验对象,分别进行12C6 和γ射线0-6Gy内不同剂量点的单次和分次照射,采用克隆存活法统计细胞的存活分数.结果显示,无论是单次还是分次照射,12C6 照射后两种细胞的存活分数均明显低于γ射线照射,而且两种细胞的辐射敏感性差异明显降低,同时分次照射细胞的存活分数没有明显提高.结果表明,高LET重离子照射对肿瘤细胞能明显提高杀伤能力,同时降低了不同细胞辐射敏感性的差异且导致细胞低的修复.以上特点与重离子剂量深度分布相结合,使得重离子在治疗肿瘤时具有特殊的优势.     

X-ray characterization of surfaces irradiated with highly charged ions

Highly charged ions (HCI) approaching, touching or penetrating dielectric surfaces extract many electrons of the solid leading to the formation of permanent surface modifications. The ions which capture the electrons in their outermost shells form hollow atoms which emit X-rays during their decay to the ground state. In this paper one presents experiments showing that these X-rays) allow diagnosing the electric nature of the surfaces. HCI while modifying the structure of surfaces may then also be used to diagnose these changes on line or off line.     

EXAFS study on Ag-doped silicate glasses irradiated with low-mass ions

We present an EXAFS study on Ag-doped soda-lime glass waveguides obtained by ion-exchange and treated by low-mass ion-irradiation to promote the formation of metallic clusters. For differently prepared samples we have determined the Ag local order before and after the treatment. In the as-exchanged glasses Ag is coordinated with O at a distance significantly shorter than the Na---O bond length in the unexchanged glass. In irradiated samples we found the formation of metal aggregates. Structural parameters of clusters in high-temperature irradiated sample are compatible with a compressed fcc structure while in room-temperature irradiated specimen a more complicated structure comes out.     

Multi-step mechanism of damage accumulation in irradiated crystals

A new model of damage accumulation is presented, which is based on the assumption that the damage build-up process is composed of several steps. Each stage is triggered by the destabilization of the current structural organization of the solid. All transformations are described by a single impact mechanism. The analysis of the damage accumulation may thus be regarded as an identification of: (i) the structural properties of a material at each stage of the damage accumulation and (ii) the mechanisms of structural transformations from stage i to stage i + 1.     

Highly sensitive molecular detection with swift heavy ions

Various imaging techniques using microbeam have been applied in biology. Secondary ion mass spectrometry (SIMS) is one of the prominent tools for biological imaging; SIMS can provide data on molecular distribution in biological samples smaller than 1 μm. However, conventional SIMS has only low sensitivity for molecular ions; therefore there is a need for beams of more sensitive primary ions. Plasma desorption mass spectrometry (PDMS) is a method using high energy fission fragments from excitation of a ²⁵²Cf source, and it allows ionization of large molecules (typically up to 20 kDa) due to the dense electronic excitation. Although PDMS is not in use today because of the development of soft ionization methods, ionization induced by high energy ion collision still remains the only method which combines high spatial resolution and sensitive detection of large molecules. In this work, the secondary ion yield of amino acid and phospholipid was measured for 6 MeV Cu⁴⁺. The yields were compared to bismuth cluster ions, which achieve relatively high yield. It was confirmed that the swift heavy ion has a couple of hundred times higher yield for large molecules than bismuth cluster ions.     

Study of calf thymus DNA irradiated in vitro with MeV fluorine ions

A study of the fragments of DNA irradiated with MeV ions is important for the understanding of the DNA damage mechanism and the subsequent biological effects （induced by heavy ions）. In this experiment, the products of calf thymus DNA （CT DNA） irradiated with MeV fluorine ions were analyzed using agarose gel electrophoresis, modified time-of-flight mass spectrometer （MALDI-TOF）, and high-performance liquid chromatography （HPLC）. The results showed that the molecular mass of the fragments were concentrated around 831 bp with agarose gel electrophoresis, there was no observable product in the range of 1,000- 30,000 （m/q） using MALDI-TOF, and small biomolecules were separated from the products. The results of this study indicated that the strand breaks of calf thymus DNA induced by MeV fluorine ions were nortrandom.