Deuterium trapping by irradiation damage in tungsten induced by different displacement processes

The deuterium trapping behaviors in tungsten damaged by light ions with lower energy (10 keV C⁺ and 3 keV He⁺) or a heavy ion with higher energy (2.8 MeV Fe²⁺) were compared by means of TDS to understand the effects of cascade collisions on deuterium retention in tungsten. By light ion irradiation, most of deuterium was trapped by vacancies, whose retention was almost saturated at the damage level of 0.2 dpa. For the heavy ion irradiation, the deuterium trapping by voids was found, indicating that cascade collisions by the heavy ion irradiation would create the voids in tungsten. Most of deuterium trapped by the voids was desorbed in higher temperature region compared to that trapped by vacancies. It was also found that deuterium could accumulate in the voids, resulting in the formation of blisters in tungsten.     

SHI induced re-crystallization of Ge implanted SiO2 films

Ge nanocrystals embedded in SiO₂ matrix have been synthesized by swift heavy ion irradiation of Ge implanted SiO₂ films. In the present study, 400 keV Ge⁺ ions were implanted into SiO₂ films at dose of 3 × 10¹⁶ ions/cm² at room temperature. The as-implanted samples were irradiated with 150 MeV Ag¹²⁺ ions with various fluences. Similarly 400 keV Ge⁺ ions implanted into Silicon substrate at higher fluence at 573 K have been irradiated with 100 MeV Au⁸⁺ ions at room temperature (RT). These samples were subsequently characterized by XRD and Raman to understand the re-crystallization behavior. The XRD results confirm the presence of Ge crystallites in the irradiated samples. Rutherford backscattering spectrometry (RBS) was used to quantify the concentration of Ge in the SiO₂ matrix. Variation in the nanocrystal size as a function of ion fluence is presented. The basic mechanism of ion beam induced re-crystallization has been discussed.     

Microstructural modifications induced by swift ions in the NiTi intermetallic compound

The conditions for track formation by irradiation with swift ions, in the shape memory NiTi metallic compound are studied. We observe that tracks are only induced in the monoclinic structure but not in the cubic one and only when the linear rate of energy deposition by electronic excitation ([dE/dx]_e) exceeds 46 keV/nm. We show that the tracks are amorphous in their centre and that a decrease of the monoclinic towards cubic transformation temperature is observed at the periphery of the track region. For [dE/dx]_e=32 keV/nm, no individual tracks can be observed at low fluences, only a monoclinic → cubic structure transformation is observed at high fluences. If [dE/dx] ⩽ 17 keV/nm, swift ions are unable to induce any visible structural modification by electronic excitations. The track formation in this alloy is discussed within the framework of the classical Coulomb explosion and thermal spike models.     

Ion beam shaping of Au nanoparticles prepared by micellar technique

Irradiation-induced burrowing and ion-induced shaping effects of Au nanoparticles are investigated. Hexagonally arranged Au nanoparticles prepared by micellar technique with diameter ～10 nm and inter-particle distance of about 80 nm were sequentially irradiated with 200 keV Ar⁺ ions to fluences of 5×10¹⁵ ions/cm². Irradiation with Argon ions causes sinking of the Au nanoparticles into the subjacent SiO₂ layer due to capillary driving forces related to specific wetting conditions while the spherical shape is conserved. Subsequent irradiation with 54 MeV Ag⁸⁺ swift heavy ions of these spherical Au nanoparticles confined within a silica matrix shapes them into prolate nanorods and nanowires whose principal axes are aligned along the beam direction. Above a threshold fluence two deformation regimes have been observed. For relatively low fluences Au nanoparticles elongate into nanorods depending on their volume. For high fluences, the formation of nanowires is observed provided that the inter-particle distance is short enough to allow for an efficient mass transport through the silica matrix.     

Tailoring the spring constant of Si nanorod structures using swift heavy ion irradiation

This study reports a post-deposition technique of engineering the mechanical properties of cantilever-like silicon nanorods by using swift heavy ion irradiation. Slanted silicon nanorods grown by glancing angle deposition technique on a patterned Si(1 0 0) substrate are irradiated by 100 MeV Ag⁺⁸ ions at a fluence of 10¹⁴ ions cm^?2. The average spring constant (k) of the nanorods determined by force–distance spectroscopy reduces to 65.6 ± 20.8 Nm^?1 post-irradiation as compared to 174.2 ± 26.5 Nm^?1 for pristine nanorods. Scanning electron micrographs show bending of the Si nanorods after irradiation. Micro-Raman and high-resolution transmission electron microscope studies on pristine and irradiated Si nanorods confirm the transformation of nanocrystalline regions present in pristine nanorods to amorphous phase on irradiation. This structural transformation and bending of the nanorods are responsible for the observed changes in the mechanical properties post-irradiation. The technique offers a simpler possibility of tailoring mechanical properties of nanostructures post-deposition by ion irradiation.     

Electrical and structural characterization of ion implanted GaN

Ion implantation induced defects and their consequent electrical impact have been investigated. Unintentionally doped n-type gallium nitride was implanted with 100 keV Si⁺ and 300 keV Ar⁺ ions in a fluence range of 10¹⁴–10¹⁵ ions/cm². The samples were characterized with Rutherford backscattering/Channeling method for damage buildup. Time of flight elastic recoil detection analysis was implied on the Si implanted samples to see the ion depth distribution. Ar implanted GaN samples were studied electrically with scanning spreading resistance microscopy. Our results show that an Ar fluence of 5 × 10¹⁴ cm^?2 increases the resistance by five orders of magnitude to a maximum value. For the highest fluence, 6 × 10¹⁵ cm^?2, the resistivity decreases by two orders of magnitude.     

AFM surface investigation of polyethylene modified by ion bombardment

Polyethylene (PE) was irradiated with 63 keV Ar⁺ and 155 keV Xe⁺ ions to fluences of 1 × 10¹³ to 3 × 10¹⁵ cm⁻² with ion energies being chosen in order to achieve approximately the same penetration depth for both species. The PE surface morphology was examined by means of atomic force microscopy (AFM), whereas the concentration of free radicals and conjugated double bonds, both created by the ion irradiation, were determined using electron paramagnetic resonance (EPR) and UV–VIS spectroscopy, respectively. As expected, the degradation of PE was higher after irradiation with heavier Xe⁺ ions but the changes in the PE surface morphology were more pronounced for Ar⁺ ions. This newly observed effect can be explained by stronger compaction of the PE surface layer in the case of the Xe⁺ irradiation, connected with a reduction of free volume available.     

Ion beam characterization of Fe-implanted GaN

Fe ion implantation in GaN has been investigated by means of ion beam analysis techniques. Implantations at an energy of 150 keV and fluences ranging from 2 × 10¹⁵ to 1 × 10¹⁶ cm^?2 were done, both at room temperature and at 623 K. Secondary Ions Mass Spectrometry was used to determine the Fe implantation profiles, whereas Rutherford Backscattering in channeling conditions with a 2.2 MeV ⁴He⁺ beam allowed us to follow the damage evolution. Particle Induced X-ray Emission in channeling conditions with a 2 MeV H⁺ beam was employed to study the lattice location of Fe atoms after implantation. The results show that a high fraction of Fe-implanted atoms are located in high symmetry sites in low fluence implanted samples, where the damage level is lower, whereas the fraction of randomly located Fe atoms increases by increasing the fluence and the resulting damage. Moreover, dynamical annealing present in high temperature implantation has been shown to favor the incorporation of Fe atoms in high symmetry sites.     

Micro-Raman studies of swift heavy ion irradiation induced structural and conformational changes in polyaniline nanofibers

Polyaniline (PAni) nanofibers doped with camphor sulfonic acid have been irradiated with 90 MeV O⁷⁺ ions at different fluences (3 × 10¹⁰?1 × 10¹² ions/cm²) using a 15UD Pelletron accelerator under ultra-high vacuum. XRD studies reveal a decrease in the domain length and an increase in the strain upon SHI irradiation. The increase in d-spacing corresponding to the (1 0 0) reflection of PAni nanofibers with increasing irradiation fluence has been attributed to the increase in the tilt angle of the chains with respect to the (a, b) basal plane of PAni. Decrease in the integral intensity upon SHI irradiation indicates amorphization of the material. Micro-Raman (μR) studies confirm amorphization of the PAni nanofibers and also show that the PAni nanofibers get de-doped upon SHI irradiation. μR spectroscopy also reveals a benzenoid to quinoid transition in the PAni chain upon SHI irradiation. TEM results show that the size of PAni nanofibers decreases with the increase in irradiation fluence, which has been attributed to the fragmentation of PAni nanofibers in the core of amorphized tracks caused by SHI irradiation.     

Thermal conductivity of SiC after heavy ions irradiation

In this study, we performed irradiation experiments on α-SiC samples, with heavy ions at room temperature (74 MeV Kr, fluence of 5 × 10¹⁴ ions cm^?2). This energy results in an irradiated layer of about 9.6 μm for SiC. TEM and Raman analyses reveal a graded damaged material. In the electronic interactions domain SiC is weakly damaged whereas it becomes fully amorphous in the nuclear interactions domain. According to the structural examinations, the irradiated SiC is considered as a multilayered material. Thermal conductivity in both electronic and nuclear interactions domains is measured as a function of temperature and annealing temperature. It appears that such an approach is reliable to estimate thermal conductivity of ceramics under neutron irradiation.     

Swift heavy ion induced modifications of optical and microstructural properties of silver–fullerene C60 nanocomposite

In this paper, we study the optical and microstructural properties of silver–fullerene C₆₀ nanocomposite and their modifications induced by swift heavy ion irradiation. Silver nanoparticles embedded in fullerene C₆₀ matrix were synthesized by co-deposition of silver and fullerene C₆₀ by thermal evaporation. The nanocomposite thin films were irradiated by 120 MeV Ag ions at different fluences ranging from 1 × 10¹² to 3 × 10¹³ ions/cm². Optical absorption studies revealed that the surface plasmon resonance of Ag nanoparticles showed a blue shift of ～49 nm with increasing ion fluence up to 3 × 10¹³ ions/cm². Transmission electron microscopy and Rutherford backscattering spectroscopy were used to quantify particle size and metal atomic fraction in the nanocomposite film. Growth of Ag nanoparticles was observed with increasing ion fluence. Raman spectroscopy was used to understand the effect of heavy ion irradiation on fullerene matrix. The blue shift in plasmonic wavelength is explained by the transformation of fullerene C₆₀ matrix into amorphous carbon.     

Damage accumulation and annealing in 6H–SiC irradiated with Si+

Damage accumulation and annealing in 6H-silicon carbide (α-SiC) single crystals have been studied in situ using 2.0 MeV He⁺ RBS in a 〈0 0 0 1〉-axial channeling geometry (RBS/C). The damage was induced by 550 keV Si⁺ ion implantation (30° off normal) at a temperature of −110°C, and the damage recovery was investigated by subsequent isochronal annealing (20 min) over the temperature range from −110°C to 900°C. At ion fluences below 7.5 × 10¹³ Si⁺/cm² (0.04 dpa in the damage peak), only point defects appear to be created. Furthermore, the defects on the Si sublattice can be completely recovered by thermal annealing at room temperature (RT), and recovery of defects on the C sublattice is suggested. At higher fluences, amorphization occurs; however, partial damage recovery at RT is still observed, even at a fluence of 6.6 × 10¹⁴ Si⁺/cm² (0.35 dpa in the damage peak) where a buried amorphous layer is produced. At an ion fluence of 6.0 × 10¹⁵ Si⁺/cm² (−90°C), an amorphous layer is created from the surface to a depth of 0.6 μm. Because of recovery processes at the buried crystalline–amorphous interface, the apparent thickness of this amorphous layer decreases slightly (<10%) with increasing temperature over the range from −90°C to 600°C.     

Controlling nickel silicide phase formation by Si implantation damage

In the context of fabrication process of contacts in CMOS integrated circuits, we studied the effect of implantation-induced damage on the Ni silicide phase formation sequence. The device layers of Silicon-on-insulator samples were implanted with 30 or 60 keV Si ions at several fluences up to amorphization. Next, 10 or 30 nm Ni layers were deposited. The monitoring of annealing treatments was achieved with time-resolved X-ray diffraction (XRD) technique. Rutherford Backscattering Spectrometry and pole figure XRD were also used to characterize some intermediate phase formations. We show the existence of an implantation threshold (1 ions/nm²) from where the silicidation behaviour changes significantly, the formation temperature of the disilicide namely shifting abruptly from 800 to 450 °C. It is also found that the monosilicide formation onset temperature for the thinner Ni deposits increases linearly by about 30 °C with the amount of damage.     

Ohmic contacts on n-type layers formed in GaN/AlGaN/GaN by dual-energy Si ion implantation

Electrical properties of Si-implanted n-type GaN/AlGaN/GaN layers and contact resistances of ohmic electrodes (TiAl) formed on these layers have been examined. Experimental results have clearly shown that ohmic electrodes with a low specific-contact resistance of 1.4 × 10^?7 Ω cm² can be fabricated on the n-type layer having a low sheet resistance of 145 Ω/sq, which has been formed by the dual-energy Si ion implantation (80 keV:1.01 × 10¹⁵/cm² + 30 keV:1.6 × 10¹⁴/cm²) and subsequent annealing at 1200 °C for 2 min using a Si₃N₄ layer as an encapsulant.     

Light particle irradiation effects in Si nanocrystals

Si nanocrystals, formed by Si ion implantation into SiO₂ layers and subsequent annealing at 1150°C, were irradiated at room temperature either with He⁺ions at energies of 30 or 130 keV, or with 400 keV electrons. Transmission electron microscopy (TEM) and photoluminescence (PL) studies were performed. TEM experiments revealed that the Si nanocrystals were ultimately amorphized (for example at ion doses ∼10¹⁶ He cm⁻²) and could not be recrystallized by annealing up to 775°C. This contrasts with previous results on bulk Si, in which electron- and very light ion-irradiation never led to amorphization. Visible photoluminescence, usually ascribed to quantum-size effects in the Si nanocrystals, was found to decrease and vanish after He⁺ ion doses as low as 3 × 10¹²–3 × 10¹³ He cm⁻² (which produce about 1 displacement per nanocrystal). This PL decrease is due to defect-induced non-radiative recombination centers, possibly situated at the Si nanocrystal/SiO₂ interface, and the pre-irradiation PL is restored by a 600°C anneal.     

Helium-implanted CLAM steel and evolutionary behavior of defects investigated by positron-annihilation spectroscopy

China Low Activation Martensitic (CLAM) steel has been chosen as the primary candidate structural material for the first wall/blanket for fusion reactor. The excessive helium irradiation induced damage of CLAM steel at high temperatures and the evolution of defects were investigated in this paper. The samples were homogeneously implanted with 1e + 17 ions/cm² and 100 keV of helium at room temperature, 473, 673, and 873 K. Irradiation induced damage of CLAM steel and the annealing behavior of defects were probed by slow positron beam Doppler broadening technique. Helium implantation produced a large number of vacancy-type defects which bound with helium and formed helium–vacancy complexes. Target atoms’ displacement capacity was strengthened with rising irradiation temperatures, so the S parameter increased with increasing irradiation temperatures, and helium–vacancy complexes were main defects after helium implantation at damage layers. Helium bubbles would be unstable and the desorption of helium bubbles would promote the density of defects above 673 K. By analyzing the curves of S–W and annealing tests of irradiated specimen, it suggested that there werenot only one type of defect in damage layers. Though helium–vacancy complexes were primary defects after helium implanted, introducing excessive helium might also generated other point defects or dislocation loops in the material.     

Damage buildup and the molecular effect in Si bombarded with PFn cluster ions

We study the molecular effect (ME) in damage accumulation in Si bombarded at room temperature with atomic P and F and cluster PF_n (n = 2 and 4) ions with an energy of 2.1 keV/amu. Correct ion irradiation conditions for unambiguous studies of the ME are discussed. Rutherford backscattering/channeling spectrometry results show that the damage buildup behavior strongly depends on the cluster ion size, and the ME efficiency increases rapidly with increasing the number of atoms in cluster ions. Moreover, the ME efficiency decreases with increasing the defect generation rate, indicating that dynamic annealing processes, rather than nonlinear energy spikes, play a major role in the ME for these irradiation conditions.     

Ion induced structural modification and nano-crystalline formation of Zr–Al–Ni–Cu metallic glasses

The effect of the ion implantation on the phase transformation was studied for glassy and crystalline Zr₅₅Al₁₀Ni₅Cu₃₀ alloys, using Au⁺ ions with 500 keV. For the glassy metal surface, nano-crystalline precipitates were effectively formed in the amorphous matrix by 500 keV Au ion irradiation at a fluence of the about 10¹⁶ cm^?2. On the contrary, the long range ordering in the partly crystalline alloy was lost by the irradiation under the same condition. Moreover, the precipitation during the heat treatment near the crystallizing temperature was effectively suppressed in the ion implanted area. In the irradiated surface, the XPS valence band structure was drastically changed, while shifts of the binding energy were found in the core level electrons of Au 4f and Cu 2p, indicating a strong interaction between the implanted Au atoms and constituent atoms of the Zr-based alloy.     

Ion beam mixing in uranium nitride thin films studied by Rutherford Backscattering Spectroscopy

Thickness, composition, concentration depth profile and ion irradiation effects on uranium nitride thin films deposited on fused silica have been investigated by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He⁺ ions. The films were prepared by reactive DC sputtering at the temperatures of ?200 °C, +25 °C and +300 °C. A perfect 1U:1N stoichiometry with a layer thickness of 660 nm was found for the film deposited at ?200 °C. An increase of the deposition temperature led to an enhancement of surface oxidation and an increase of the thickness of the mixed U–N–Si–O layers at the interface. The sample irradiation by 1 MeV Ar⁺ ion beam with ion fluence of about 1.2–1.7 × 10¹⁶ ions/cm² caused a large change in the layer composition and a large increase of the total film thickness for the films deposited at ?200 °C and at +25 °C, but almost no change in the film thickness was detected for the film deposited at +300 °C. An enhanced mixing effect for this film was obtained after further irradiation with ion fluence of 2.3 × 10¹⁶ ions/cm².     

High energy Si ions bombardment effects on the properties of nano-layers of SiO2/SiO2 + Ag

We grew 50 periodic SiO₂/SiO₂ + Ag multi-layers by electron beam deposition technique. The co-deposited SiO₂ + Ag layers are 7.26 nm, SiO₂ buffer layers are 4 nm, and total thickness of film was determined as 563 nm. We measured the thickness of the layers using in situ thickness monitoring during deposition, and optical interferometry afterwards. The concentration and distribution of Ag in SiO₂ were determined using Rutherford backscattering spectrometry (RBS). In order to calculate the dimensionless figure of merit, ZT, the electrical conductivity, thermal conductivity and the Seebeck coefficient of the layered structure were measured at room temperature before and after bombardment with 5 MeV Si ions. The energy of the Si ions was chosen such that the ions are stopped deep inside the silicon substrate and only electronic energy due to ionization is deposited in the layered structure. Optical absorption (OA) spectra were taken in the range 200–900 nm to monitor the Ag nanocluster formation in the thin layers.