Tensile and Charpy impact properties of an ODS ferritic/martensitic steel 9Cr–1.8W–0.5Ti–0.35Y2O3

A 9Cr-ODS ferritic/martensitic steel with a composition of 9Cr–1.8W–0.5Ti–0.35Y₂O₃ was fabricated by mechanical alloying and hot isostatic pressing, followed by hot rolling. Tensile properties were measured at room temperature (23 °C) and 700 °C in the rolling direction (LT) and the transverse direction (TL). The ultimate tensile strength (UTS) of the as-rolled samples in both directions reached 990 MPa at 23 °C, and still maintained at 260 MPa at 700 °C. The tensile strength and elongation of the rolling direction was greater than that of the transverse direction. The Charpy impact was tested from −100 to 100 °C in the LT direction. The lower shelf energy (LSE) was more than 65% of the upper shelf energy (USE). The total absorbed energy was separated into the energies for crack initiation and propagation. The propagation energy was always higher than the initiation energy in the range of temperatures tested. The ductile-to-brittle transition temperature (DBTT) of the rolled 9Cr ODS evaluated by an absorbed energy curve was about 0 °C. However, the high LSE and the fracture surface that still contained dimples at lower shelf indicated good toughness of the as-rolled 9Cr ODS steels at temperature of −60 °C.     

Grazing angle 2 MeV RBS on the surface of a liquid with atomic layer depth resolution

RBS (2 MeV) has been used to study the near surface Br distribution for a salt (TEABr) in hydrocarbon (PEG200) solution. Near grazing incidence, measuring the energy of the Br edge as a function of the angle between the beam and the liquid surface indicates that Br is depleted from the surface to an average depth of 6.9 Å.     

Determination of differential cross-sections for the natK(p, p0) and 39K(p, α0) reactions in the backscattering geometry

In the present work, new, differential cross-section values are presented for the ^natK(p, p₀) reaction in the energy range E_lab = 3000–5000 keV (with an energy step of 25 keV) and for detector angles between 140° and 170° (with an angular step of 10°). A qualitative discussion of the observed cross-section variations through the influence of strong, closely spaced resonances in the p + ³⁹K system is also presented. Information has also been extracted concerning the ³⁹K(p,α₀) reaction for E_lab = 4000–5000 keV in the same angular range. As a result, more than ～500 data points will soon be available to the scientific community through IBANDL (Ion Beam Analysis Nuclear Data Library – http://www-nds.iaea.org/ibandl/) and could thus be incorporated in widely used IBA algorithms (e.g. SIMNRA, WINDF, etc.) for potassium depth profiling at relatively high proton beam energies.     

Temporal development of sputtered atom distributions from Au(1 1 1) targets following bombardment with 100 keV/atom Au2 ions

Recently Bouneau et al. measured the angular and energy distributions of negative Au_n (n=2–7) ions emitted from gold targets following bombardment with swift gold cluster projectiles. They found that the energy distributions could be fitted with a spike-like model, and that the angular distributions were independent of the azimuthal emission angle and relatively strongly forward directed. We have used MD simulations to investigate the temporal development of energy and angular distributions of sputtered atoms from Au(1 1 1) targets following bombardment with 100 keV/atom Au₂ ions. Our results show that during the very early stages of the collision cascade the energy distribution of sputtered atoms is described well by the linear cascade model. Essentially all high energy sputtered atoms are emitted during this phase of the collision cascade. However, the energy distributions of atoms sputtered after 0.5 ps were typical of emission from a thermal spike and could be fitted well with a Sigmund–Claussen model. The polar angle distributions of sputtered atoms were strongly forward directed early in the collision cascade, but became less forward directed as the thermal spike developed.     

Thermal,structural, and radiological properties of irradiated graphite from the ASTRA research reactor – Implications for disposal

The release of Wigner energy from the graphite of the inner thermal column of the ASTRA research reactor has been studied by differential scanning calorimetry and simultaneous differential scanning calorimetry/synchrotron powder X-ray diffraction between 25 °C and 725 °C at a heating rate of 10 °C min⁻¹. The graphite, having been subject to a fast-neutron fluence from ∼10¹⁷ to ∼10²⁰ n cm⁻² over the life time of the reactor at temperatures not exceeding 100 °C, exhibits Wigner energies ranging from 25 to 572 J g⁻¹ and a Wigner energy accumulation rate of ∼7 × 10⁻¹⁷ J g⁻¹/n cm⁻². The shape of the rate-of-heat-release curves, e.g., maximum at ca. 200 °C and a fine structure at higher temperatures, varies with sample position within the inner thermal column, i.e., the distance from the reactor core. Crystal structure of samples closest to the reactor core (fast-neutron fluence >1.5−5.0 × 10¹⁹ n cm⁻²) is destroyed while that of samples farther from the reactor core (fast-neutron fluence <1.5−5.0 × 10¹⁹ n cm⁻²) is intact, with marked swelling along the c-axis. The dependence of the c lattice parameter on temperature between 25 °C and 200 °C as determined by Rietveld refinement for the non-amorphous samples leads to the expected microscopic thermal expansion coefficient along the c-axis of ∼ 26 × 10⁻⁶ °C⁻¹. However, at 200 °C, coinciding with the maximum in the rate-of-heat-release curves, the rate of thermal expansion abruptly decreases indicating a crystal lattice relaxation. The ¹⁴C activity in the inner thermal column graphite ranges from 6 to 467 kBq g⁻¹. The graphite of the inner thermal column of the ASTRA research reactor has been treated by heating to 400 °C for 24 h in a hot-cell facility prior to interim storage.     

Tailoring the spring constant of Si nanorod structures using swift heavy ion irradiation

This study reports a post-deposition technique of engineering the mechanical properties of cantilever-like silicon nanorods by using swift heavy ion irradiation. Slanted silicon nanorods grown by glancing angle deposition technique on a patterned Si(1 0 0) substrate are irradiated by 100 MeV Ag⁺⁸ ions at a fluence of 10¹⁴ ions cm^?2. The average spring constant (k) of the nanorods determined by force–distance spectroscopy reduces to 65.6 ± 20.8 Nm^?1 post-irradiation as compared to 174.2 ± 26.5 Nm^?1 for pristine nanorods. Scanning electron micrographs show bending of the Si nanorods after irradiation. Micro-Raman and high-resolution transmission electron microscope studies on pristine and irradiated Si nanorods confirm the transformation of nanocrystalline regions present in pristine nanorods to amorphous phase on irradiation. This structural transformation and bending of the nanorods are responsible for the observed changes in the mechanical properties post-irradiation. The technique offers a simpler possibility of tailoring mechanical properties of nanostructures post-deposition by ion irradiation.     

Effect of thermal heat loads on the microstructure of recrystallized double forged tungsten

Two recrystallized double forged W materials, one which was pre-heated up to 400 °C and exposed to 120 keV electrons during 100 pulses of 1 ms giving a total power of 1.26 GW/m² and one as reference which was only pre-heated to 400 °C, were investigated with SEM and TEM to reveal the effect of the exposure on the microstructure. The reference material revealed that the selected material contains only some large angle grain boundaries and occasionally a few isolated dislocations. The e-beam exposure of the material resulted only in a deformation of the matrix. The surface has roughened and series of parallel ridges were observed in the SEM images. However, no cracks or other signs of material rupture were found. On a microscopic level the deformation manifested as an increased number of tangled dislocations and the reappearance of small angle tilt boundaries.     

Heteroepitaxial Er0.49Gd0.51Si1.7 layers formed by channeled ion beam synthesis

Epitaxial ternary silicide Er_0.49Gd_0.51Si_1.7 layers with a good crystalline quality (χ_min of Er and Gd is 3.7%) have been formed by 60 keV Er and Gd ion implantation into Si(1 1 1) substrates to a total dose of 1.0 × 10¹⁷/cm² at 450°C using channeled ion beam synthesis (CIBS). The composition, the structure, the strain and the thermal stability of these layers have been studied using energy dispersive spectroscopy (EDS), Rutherford backscattering (RBS)/channeling and X-ray diffraction (XRD). It is shown that the perpendicular and parallel elastic strains of the Er_0.49Gd_0.51Si_1.7 epilayer are e^⊥=−0.46% ± 0.02% and e⁶=+0.73% ± 0.19%. The layer is stable up to 900°C. Annealing at 950°C results in a phase transformation.     

Ion beam mixing in uranium nitride thin films studied by Rutherford Backscattering Spectroscopy

Thickness, composition, concentration depth profile and ion irradiation effects on uranium nitride thin films deposited on fused silica have been investigated by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He⁺ ions. The films were prepared by reactive DC sputtering at the temperatures of ?200 °C, +25 °C and +300 °C. A perfect 1U:1N stoichiometry with a layer thickness of 660 nm was found for the film deposited at ?200 °C. An increase of the deposition temperature led to an enhancement of surface oxidation and an increase of the thickness of the mixed U–N–Si–O layers at the interface. The sample irradiation by 1 MeV Ar⁺ ion beam with ion fluence of about 1.2–1.7 × 10¹⁶ ions/cm² caused a large change in the layer composition and a large increase of the total film thickness for the films deposited at ?200 °C and at +25 °C, but almost no change in the film thickness was detected for the film deposited at +300 °C. An enhanced mixing effect for this film was obtained after further irradiation with ion fluence of 2.3 × 10¹⁶ ions/cm².     

Properties of InAs grown on misoriented GaAs substrates by atmospheric pressure metal–organic vapor phase epitaxy

InAs epilayers were grown by atmospheric pressure metal–organic vapor phase epitaxy on GaAs (1 0 0) exactly oriented substrates and misoriented by 2° and 10° toward [1 1 1]A. The layers had varying thicknesses and were deposited under the same growth conditions. Atomic force microscopy analysis show that surface morphology depends on surface misorientation and presents a low root mean square. High resolution X-ray diffraction analysis and Hall effect measurements were preformed to check the substrate misorientation effect on the crystalline quality and electrical properties respectively.     

Hydrogen-induced disproportionation characteristics of Zr(1 − x)Hf(x)Co(x = 0, 0.1, 0.2 and 0.3) alloys

Doping hafnium to partially substitute zirconium in ZrCo is a promising strategy to improve the ability to resist hydrogen-induced disproportionation. Herein, Zr(1 ? x)Hf(x)Co(x = 0,0.1,0.2, and 0.3) alloys were fabricated by arc melting and the effect of hafnium substitution ratio and temperature on their hydrogen-induced disproportionation was studied. Additionally, the disproportionated products were characterized by XRD, DSC and TDS. Results showed that disproportionation rate and the extent of disproportionation decreased with hafnium substitution ratio increasing from 0 to 30% and increased with temperature increasing from 400 °C to 550 °C. It was exciting that Zr0.7Hf0.3Co alloy had much better ability of anti-disproportionation than ZrCo in hydrogen pressure of about 200 kPa when temperature increasing from 400 °C to 550 °C, which was practical for tritium application.     

Quantifying helium distribution in dual-ion beam irradiated SiCf/SiC composites by electron energy loss spectroscopy

In this study, we report a method to quantify the helium distribution in the SiC_f/SiC composites, which are used as the first-wall materials of fusion reactor. The helium-bubble formation in Hi-Nicalon Type-S (HNS) was observed in the irradiated SiC_f/SiC composites at a level of 100 dpa and at 800 °C and 1000 °C, respectively. We applied transmission electron microscopy and electron energy loss spectroscopy to investigate the helium-gas-bubbles-formation mechanisms. To simulate the practical first-wall environment of Deuterium–Tritium (D–T) fusion reactor, a dual-ion beam (6 MeV Si³⁺ and 1.13 MeV He⁺) was performed to irradiate the SiC_f/SiC composites. The relationship between the energy shift of He K-edge and the radius of the bubble of the SiC composites was estimated by electron energy loss spectroscopy analysis. The results show that all of the helium atoms irradiated at 1000 °C and formed the bubbles. On the other hand, at 800 °C, only 25.5% of the helium atoms form the helium bubbles. A clear thermal-dependent formation mechanism is found.     

GISAXS and GIWAXS analysis of amorphous–nanocrystalline silicon thin films

Amorphous–nanocrystalline silicon thin films were deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on glass substrate with various silicon nano-crystal size distributions and volume fractions. The samples were examined by Grazing Incidence Small Angle X-ray Scattering (GISAXS) and Grazing Incidence Wide Angle X-ray Scattering (GIWAXS) at the Austrian SAXS beamline (Synchrotron Elettra, Trieste) using an X-ray beam energy of 8 keV. The grazing incidence angle varied from the critical angle to 0.2° above the critical angle. This allowed the examination of the samples at different depths, and the distinction of the surface scattering contribution from the particles scattering in the bulk. The sizes of the “particles” obtained from the horizontal and vertical sections of 2D GISAXS patterns were between 2 nm and 6 nm. Since GISAXS is sensitive to electron density differences (contrast) between the scattering bodies and the surrounding matrix, it is not evident whether the particles are nano-crystals or just voids embedded in amorphous matrix. However, the size of the crystals calculated from the line-shape analysis of peaks in GIWAXS spectra and the crystal size distribution obtained from High-Resolution Transmission Electron Microscopy (HRTEM) images agree well with the size of “particles” estimated from GISAXS, strongly indicating that the observed particles are silicon nano-crystals.     

Ion channeling investigation of oxygen sublattice in YBa2Cu3O7 crystal film

The features of the oxygen sublattice in a crystal YBa₂Cu₃O₇ are investigated by channeling technique. It has been measured the angular dependence of resonant reaction yield of 3.055 MeV He⁺ ions channeled from oxygen nuclei along 〈0 0 1〉 direction. The best agreement of the calculated angular dependence of the reaction yield with experimental data is achieved with the assumption that the oxygen sublattice is partly disordered. About 20% of oxygen atoms are situated in the plane (1 1 0) randomly; the oxygen atoms in oxygen chains are displaced from crystal sites at ∼0.3 Å in the (1 1 0) plane.     

The thermoluminescent properties of natural calcium fluoride for radiation dosimetry

The characteristics of natural calcium fluoride from Çiçekda?? Massif (Akçakent) in Turkey have been studied by analysing its thermoluminescence glow curve structure between 30 and 450 °C for the purpose of radiation dosimetry. A variety of thermoluminescence measurement regimes have been examined to determine the most effective and appropriate annealing temperature, heating rate and dose range for the proper and accurate use of this phosphorescent material. After a high temperature annealing as TL readings, optimum values for low temperature annealing and heating rate were obtained as 60 °C for 24 h and 1 °C s^?1, respectively. In the dose range of 0.5 Gy–1 kGy, the intensity of individual glow peaks and overall glow curve shape changed. The peak intensities of all glow curves located at 100 and 120 °C (overlapping considerably), and at 215 °C, at 310, 350 and 410 °C (overlapping) increase linearly with increasing ionizing radiation over a range of from 0.5 Gy to 10 Gy.     

Ion beam synthesis of SiC by C implantation into SIMOX(1 1 1)

We report the conversion of a 65 nm Si(1 1 1) overlayer of a SIMOX(1 1 1) into 30–45 nm SiC by 40 keV carbon implantation into it. High temperature implantation (600 °C) through a SiO₂ cap, 1250 °C post-implantation annealing under Ar ambient (with 1% of O₂), and etching are the base for the present synthesis. Sequential C implantations (fluence steps of about 5 × 10¹⁶ cm^?2), followed by 1250 °C annealing, has allowed to estimate the minimum C fluence to reach the stoichiometric composition as ～2.3 ×  10¹⁷ cm^?2. Rutherford Backscattering Spectrometry was employed to measure layer composition evolution. A two-sublayers structure is observed in the synthesized SiC, being the superficial one richer in Si. Transmission electron microscopy has shown that a single-step implantation up to the same minimum fluence results in better structural quality. For a much higher C fluence (4 × 10¹⁷ cm^?2), a whole stoichiometric layer is obtained, with reduction of structural quality.     

Effect of heat treatment on bend stress relaxation of pure tungsten

Bend stress relaxation (BSR) tests at temperatures of 500, 600, 800, 900 and 1000 °C for 0.1, 0.5 and 1 h in vacuum were performed on the pure tungsten after heat treatment for stress relief at 900 °C for 1 h. The degree of stress relaxation increased with test temperature. The BSR ratio of the heat treated specimen was larger than that of the as-received specimen at this temperature region. Small reduction in the BSR ratio was observed at the temperatures of 500, 600 and 800 °C. The BSR ratio of the heat treated specimen decreased significantly at the temperatures of 900 and 1000 °C and it was close to that of the as-received specimen. The BSR ratio of the heat treated specimen and the as-received specimen exhibited similar trend of time-evolution. The stress was exponentially relaxed with increasing test time. The BSR ratio decreased significantly in a short time below 0.1 h, and then decreased slowly. Higher activation energy of stress relaxation evaluated by cross-cut method was obtained for the higher temperature.     

High temperature deformation and fracture behaviour of 316L stainless steel under high strain rate loading

The high temperature deformation and fracture behaviour of 316L stainless steel under high strain rate loading conditions are investigated by means of a split Hopkinson pressure bar. Impact tests are performed at strain rates ranging from 1 × 10³ s^?1 to 5 × 10³ s^?1 and temperatures between 25 °C and 800 °C. The experimental results indicate that the flow response and fracture characteristics of 316L stainless steel are significantly dependent on the strain rate and temperature. The fracture analysis results indicate that the 316L specimens fail predominantly as the result of intensive localised shearing. Furthermore, it is shown that the flow localisation effect leads to the formation of adiabatic shear bands. The fracture surfaces of the deformed 316L specimens are characterised by a dimple-like structure with knobby features. The knobby features are thought to be the result of a rise in the local temperature to a value greater than the melting point.     

Effects of BF2+ implantation on the strain-relaxation of pseudomorphic metastable Ge0.06Si0.94 alloy layers

Metastable pseudomorphic Ge_0.06Si_0.94 alloy layers grown by molecular beam epitaxy (MBE) on Si (1 0 0) substrates were implanted at room temperature by 70 keV BF₂⁺ ions with three different doses of 3 × 10¹³, 1 × 10¹⁴, and 2.5 × 10¹⁴ cm⁻². The implanted samples were subsequently annealed at 800°C and 900°C for 30 min in a vacuum tube furnace. Observed by MeV ⁴He channeling spectrometry, the sample implanted at a dose of 2.5 × 10¹⁴ BF₂⁺ cm⁻² is amorphized from surface to a depth of about 90 nm among all as-implanted samples. Crystalline degradation and strain-relaxation of post-annealed Ge_0.06Si_0.94 samples become pronounced as the dose increases. Only the samples implanted at 3 × 10¹³ cm⁻² do not visibly degrade nor relax during anneal at 800°C . In the leakage current measurements, no serious leakage is found in most of the samples except for one which is annealed at 800°C for 30 min after implantation to a dose of 2.5 × 10¹⁴ cm⁻². It is concluded that such a low dose of 3 × 10¹³ BF₂⁺ cm⁻² can be doped by implantation to conserve intrinsic strain of the pseudomorphic GeSi, while for high dose regime to meet the strain-relaxation, annealing at high temperatures over 900°C is necessary to prevent serious leakages from occuring near relaxed GeSi/Si interfaces.