A 120-mm2 64-Mb NAND flash memory achieving 180 ns/Byteeffective program speed

Emerging application areas of mass storage flash memories require low cost, high density flash memories with enhanced device performance. This paper describes a 64 Mb NAND flash memory having improved read and program performances. A 40 MB/s read throughput is achieved by improving the page sensing time and employing the full-chip burst read capability. A 2-μs random access time is obtained by using a precharged capacitive decoupling sensing scheme with a staggered row decoder scheme. The full-chip burst read capability is realized by introducing a new array architecture. A narrow incremental step pulse programming scheme achieves a 5 MB/s program throughput corresponding to 180 ns/Byte effective program speed. The chip has been fabricated using a 0.4-μm single-metal CMOS process resulting in a die size of 120 mm² and an effective cell size of 1.1 μm²     

新型高速大容量雷达数据记录器设计

提出了一种新型高速大容量雷达数据记录器的设计。为了将有效速度为59MB/s的雷达回波数据流及时、可靠的存储到记录器中,系统逻辑使用了乒乓缓存技术将其分解为两路速度为29.5MB/s的数据流并分别交叉写入两片Flash,这样大大减轻了单片Flash操作时序的压力。同时单片Flash运用了交错式双平面编程和高效的无效块管理,最大化的提高了芯片的写入速度。此数据记录器已经通过了振动、高低温、电磁兼容和冲击等实验,运行可靠稳定,同时已经交付部队使用。     

A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology

A 16 Gb 4-state MLC NAND flash memory augments the sustained program throughput to 34 MB/s by fully exercising all the available cells along a selected word line and by using additional performance enhancement modes. The same chip operating as an 8 Gb SLC device guarantees over 60 MB/s programming throughput. The newly introduced all bit line (ABL) architecture has multiple advantages when higher performance is targeted and it was made possible by adopting the ldquocurrent sensingrdquo (as opposed to the mainstream ldquovoltage sensingrdquo) technique. The general chip architecture is presented in contrast to a state of the art conventional circuit and a double size data buffer is found to be necessary for the maximum parallelism attained. Further conceptual changes designed to counterbalance the area increase are presented, hierarchical column architecture being of foremost importance. Optimization of other circuits, such as the charge pump, is another example. Fast data access rate is essential, and ways of boosting it are described, including a new redundancy scheme. ABL contribution to energy saving is also acknowledged.     

4-Mb MOSFET-selected /spl mu/trench phase-change memory experimental chip

A /spl mu/trench Phase-Change Memory (PCM) cell with MOSFET selector and its integration in a 4-Mb experimental chip fabricated in 0.18-/spl mu/m CMOS technology are presented. A cascode bitline biasing scheme allows read and write voltages to be fed to the addressed storage elements with the required accuracy. The high-performance capabilities of PCM cells were experimentally investigated. A read access time of 45 ns was measured together with a write throughput of 5 MB/s, which represents an improved performance as compared to NOR Flash memories. Programmed cell current distributions on the 4-Mb array demonstrate an adequate working window and, together with first endurance measurements, assess the feasibility of PCMs in standard CMOS technology with few additional process modules.     

A 56-nm CMOS 99-mm2 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput

A single 3.3-V only, 8-Gb NAND flash memory with the smallest chip to date, 98.8 mm², has been successfully developed. This is the world's first integrated semiconductor chip fabricated with 56-nm CMOS technologies. The effective cell size including the select transistors is 0.0075 mum² per bit, which is the smallest ever reported. To decrease the chip size, a very efficient floor plan with one-sided row decoder, one-sided page buffer, and one-sided pad is introduced. As a result, an excellent 70% cell area efficiency is realized. The program throughput is drastically improved to twice as large as previously reported and comparable to binary memories. The best ever 10-MB/s programming is realized by increasing the page size from 4kB to 8kB. In addition, noise cancellation circuits and the dual VDD-line scheme realize both a small die size and a fast programming. An external page copy achieves a fast 93-ms block copy, efficiently using a 1-MB block size     

WinCE系统上大容量NAND Flash驱动设计与优化

NAND Flash具有存取速度快、体积小、成本低的特点,适宜作为海量数据的存储设备.本文设计了一种大容量NAND FLASH在WinCE系统上的实现方案.通过动态扇区分配、坏块管理和数据缓存等技术,提高了Flash驱动的安全性、稳定性和读写性能.经过优化后,平均读取速度2Mbyte/s,写入速度3Mbyte1/s.整个驱动通过了微软测试工具CETK(WinCE Test kit)的测试.     

High-performance 1-Gb-NAND flash memory with 0.12-/spl mu/m technology

A 1.8-V, 1-Gb NAND flash memory is fabricated with 0.12-/spl mu/m CMOS STI process technology. For higher integration, a 32-cell NAND structure, which enables row decoder layout in one block pitch, is applied for the first time. Resulting cell and die sizes are 0.076 /spl mu/m/sup 2/ and 129.6 mm/sup 2/, respectively. A pseudo-4-phase charge pump circuit can generate up to 20 V even under the supply voltage of 1.6 V. A newly applied cache program function and expanded page size of (2 k + 64) byte lead to program throughput of 7 MB/s. The page copy-back function is provided for on-chip garbage collection. The read throughput of 27 MB/s is achieved by simply expanding I/O width and page size. A measured disturbance free-window of 3.5 V at 1.5 V-V/sub DD/ is obtained.     

A 117-mm2 3.3-V only 128-Mb multilevel NAND flash memoryfor mass storage applications

For a quantum step in further cost reduction, the multilevel cell concept has been combined with the NAND flash memory. Key requirements of mass storage, low cost, and high serial access throughput have been achieved by sacrificing fast random access performance. This paper describes a 128-Mb multilevel NAND flash memory storing 2 b per cell. Multilevel storage is achieved through tight cell threshold voltage distribution of 0.4 V and is made practical by significantly reducing program disturbance by using a local self-boosting scheme. An intelligent page buffer enables cell-by-cell and state-by-state program and inhibit operations. A read throughput of 14.0 MB/s and a program throughput of 0.5 MB/s are achieved. The device has been fabricated with 0.4-μm CMOS technology, resulting in a 117 mm² die size and a 1.1 μm² effective cell size     

A 125-mm/sup 2/ 1-Gb NAND flash memory with 10-MByte/s program speed

A single 3-V only, 1-Gb NAND flash memory has been successfully developed. The chip has been fabricated using 0.13-/spl mu/m CMOS STI technology. The effective cell size including the select transistors is 0.077 /spl mu/m/sup 2/. To decrease the chip size, a new architecture is introduced. The in-series connected memory cells are increased from 16 to 32. Furthermore, as many as 16 k memory cells are connected to the same wordline. As a result, the chip size is decreased by 15%. A very small die size of 125 mm/sup 2/ and an excellent cell area efficiency of 70% are achieved. As for the performance, a very fast programming and serial read are realized. The highest program throughput ever of 10.6-MByte/s is realized: 1) by quadrupling the page size and 2) by newly introducing a write cache. In addition, the garbage collection is accelerated to 9.4-MByte/s. In addition, the write cache accelerates the serial read operation and a very fast 20-MByte/s read throughput is realized.     

A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

A 512 Mb diode-switch PRAM has been developed in a 90 nm CMOS technology. The vertical diode-switch using the SEG technology has achieved minimum cell size and disturbance-free core operation. A core configuration, read/write circuit techniques, and a charge-pump system for the diode-switch PRAM are proposed. The 512 Mb PRAM has achieved read throughput of 266 MB/s through the proposed schemes. The write throughput was 0.54 MB/s in internal x2 write mode, and increased to 4.64 MB/s with x16 accelerated write mode at 1.8 V supply.     

Towards an H.264/AVC HW/SW Integrated Solution: An Efficient VBSME Architecture

This paper presents an efficient real-time variable block size motion estimation architecture. The proposed architecture provides motion vectors for each 16 $times$ 16 block and its 40 sub-blocks. The proposed architecture is a single-instruction multiple-data architecture integrated with embedded SRAMs on one chip. The architecture has been prototyped using Xilinx Virtex-4 XC4VSX35-10 field-programmable gate array. It processes 30-CIF fps using 71-MHz clock frequency. Its maximum clock frequency is 187.7 MHz and the maximum throughput is 20 4CIF fps. The prototyped architecture has 175 k gates and 18 kbits embedded SRAM.      

A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate

A 16 Gb 8-level NAND flash chip on 56 nm CMOS technology has been fabricated and is being reported for the first time. This is the first 3-bit per cell (X3) chip published with all-bitline (ABL) architecture, which doubles the write performance compared with conventional shielded bitline architecture. A new advanced cache program algorithm provides another 15% improvement in write performance. This paper also discusses a technique for resolving the sensing error resulting from cell source line noise, which usually varies with the data pattern. The new architecture and advanced algorithm enable an 8 MB/s write performance that is comparable to previously published 2-bit per cell (4-level) NAND performance. Considering the significant cost reduction compared to 4-level NAND flash based on the same technology, this chip is a strong candidate for many mainstream applications.     

A side-wall transfer-transistor cell (SWATT cell) for highlyreliable multi-level NAND EEPROMs

A multi-level NAND Flash memory cell, using a new Side-WAll Transfer-Transistor (SWATT) structure, has been developed for a high performance and low bit cost Flash EEPROM. With the SWATT cell, a relatively wide threshold voltage (V_th) distribution of about 1.1 V is sufficient for a 4-level memory cell in contrast to a narrow 0.6 V distribution that is required for a conventional 4-level NAND cell. The key technology that allows this wide V_th distribution is the Transfer Transistor which is located at the side wall of the Shallow Trench Isolation (STI) region and is connected in parallel with the floating gate transistor. During read, the Transfer Transistors of the unselected cells (connected in series with the selected cell) function as pass transistors. So, even if the V_th of the unselected floating gate transistor is higher than the control gate voltage, the unselected cell will be in the ON state. As a result, the V_th distribution of the floating gate transistor can be wider and the programming can be faster because the number of program/verify cycles can be reduced. Furthermore, the SWATT cell results in a very small cell size of 0.57 μm² for a 0.35 μm rule. Thus, the SWATT cell combines a small cell size with a multi-level scheme to realize a very low bit cost. This paper describes the process technology and the device performance of the SWATT cell, which can be used to realize NAND EEPROM's of 512 Mbit and beyond     

Implementation of an 8-Core, 64-Thread, Power-Efficient SPARC Server on a Chip

The second in the Niagara series of processors (Niagara2) from Sun Microsystems is based on the power-efficient chip multi-threading (CMT) architecture optimized for Space, Watts (Power), and Performance (SWaP) [SWap Rating = Performance/(Space _* Power) ]. It doubles the throughput performance and performance/watt, and provides >10times improvement in floating point throughput performance as compared to UltraSPARC T1 (Niagara1). There are two 10 Gb Ethernet ports on chip. Niagara2 has eight SPARC cores, each supporting concurrent execution of eight threads for 64 threads total. Each SPARC core has a floating point and graphics unit and an advanced cryptographic unit which provides high enough bandwidth to run the two 10 Gb Ethernet ports encrypted at wire speeds. There is a 4 MB Level2 cache on chip. Each of the four on-chip memory controllers controls two FBDIMM channels. Niagara2 has 503 million transistors on a 342 mm² die packaged in a flip-chip glass ceramic package with 1831 pins. The chip is built in Texas Instruments' 65 nm 11LM triple-Vt CMOS process. It operates at 1.4 GHz at 1.1 V and consumes 84 W.     

SD卡存储模块设计

在SD存储卡设计讨论的基础上给出了实现过程,讨论开发平台.围绕提高速度设计和实现了系统架构,开发环境,基本模块设计和读写模块设计.通过这样的实现,可以使读写的速度达到20MB/s、12MB/s.通过W86L388D桥接芯片,控制器和Nand Flash芯片两块大的芯片实现SD长硬件部分.通过四大模块来设计和实现控制器,...     

A 40 Mb/s soft-output Viterbi decoder

Soft-output decoding has evolved as a key technology for new error correction approaches with unprecedented performance as well as for improvement of well established transmission techniques. In this paper, we present a high-speed VLSI implementation of the soft-output Viterbi algorithm, a low complexity soft-output algorithm, for a 16-state convolutional code. The 43 mm² standard cell chip achieves a simulated throughput of 40 Mb/s, while tested samples achieved a throughput of 50 Mb/s. The chip is roughly twice as big as a 16-state Viterbi decoder without soft outputs. It is thus shown with the design that transmission schemes using soft-output decoding can be considered practical even at very high throughput. Since such decoding systems are more complex to design than hard output systems, special emphasis is placed on the employed design methodology     

A Fully Performance Compatible 45 nm 4-Gigabit Three Dimensional Double-Stacked Multi-Level NAND Flash Memory With Shared Bit-Line Structure

A 3-dimensional double stacked 4 gigabit multilevel cell NAND flash memory device with shared bitline structure have successfully developed. The device is fabricated by 45 nm floating-gate CMOS and single-crystal Si layer stacking technologies. To support fully compatible device performance and characteristics with conventional planar device, shared bitline architecture including Si layer-dedicated decoder and Si layer-compensated control schemes are also developed. By using the architecture and the design techniques, a memory cell size of 0.0021 mum²/bit per unit feature area which is smallest cell size and 2.5 MB/s program throughput with 2 kB page size which is almost equivalent performance compared to conventional planar device are realized.     

A scarce-state-transition Viterbi-decoder VLSI for bit error correction

A high-speed Viterbi decoder VLSI with coding rate R=1/2 and constraint length K=7 for bit-error correction has been developed using 1.5-/spl mu/m n-well CMOS technology. To reduce both hardware size and power dissipation, a recently developed scarce-state-transition (SST) Viterbi decoding scheme has been utilized. In addition, three-layer metallization and an advanced hierarchical macrocell design method (HMCM) have been adopted to improve packing density and reduce chip size. As a result, active chip area has been reduced by half, compared to the conventional standard cell design method (SCM) with two-layer metallization, and 42 K gates have been integrated on a chip with a die size of 9.52/spl times/10.0 mm/SUP 2/. The VLSI decoder has achieved a maximum data throughput rate of 23 Mb/s with a net coding gain of 4.4 dB (at 10/SUP -4/ bit-error rate). The chip dissipates only 825 mW at a data rate of 10 Mb/s.     

NAND Flash高速图像记录压力测试系统

为了测定NAND Flash 图像记录系统的稳定性以及峰值记录速度指标,减少人工测试量,设计了压力测试系统。针对稳定性测试问题,设计了基于指数回归的速度压力模型和基于对数正态分布的测试时长控制模型;针对峰值记录速度测定问题,提出了基于爬山搜索算法和速率二分法的软硬件协同测试方法。基于有效数据占空比机制设计速率软件可调的硬件数据产生器,用爬山算法粗略确定峰值记录速度区间,再用速率二分法逼近峰值记录速度;系统测试报告通过串口和千兆网输出至上位机显示。实验结果表明:测试系统速度压力调整精度可达0.1MB/s;速度压力范围为0~1 600MB/s;回读数据硬件检验无时钟延迟;被测NAND Flash 记录系统挂载8 片SLC NAND Flash 芯片的峰值记录速度为240.12MB/s,在200MB/s 速度压力下,可以连续工作24 h 以上。测试系统架构为通用化设计,可以对其他传输和记录系统进行压力测试。     

Design and performance testing of a 2.29-GB/s Rijndael processor

This contribution describes the design and performance testing of an Advanced Encryption Standard (AES) compliant encryption chip that delivers 2.29 GB/s of encryption throughput at 56 mW of power consumption in a 0.18-/spl mu/m CMOS standard cell technology. This integrated circuit implements the Rijndael encryption algorithm, at any combination of block lengths (128, 192, or 25 bits) and key lengths (128, 192, or 256 bits). We present the chip architecture and discuss the design optimizations. We also present measurement results that were obtained from a set of 14 test samples of this chip.