共查询到20条相似文献,搜索用时 15 毫秒
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为成功拆除复杂环境下1座61 m高的冷却塔,根据其周边环境及结构特点,采用定向倒塌方案.首先采用机械方法开设定向窗和减荷槽,随后对19对人字柱进行爆破,使用毫秒延时爆破技术,控制单段起爆药量,成功完成拆除爆破.对拆除爆破后冷却塔的倒塌情况进行分析,冷却塔按照设计方向倒塌,解体完全,爆破振动以及触地振动控制在合理范围之内... 相似文献
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The effectiveness of 10-s microgravity on thermophysical property measurements on molten materials, such as molten semiconductors, is discussed. The thermal conductivity of molten InSb was successfully measured under microgravity conditions on board the German sounding rocket TEXUS and in a drop shaft in Hokkaido, Japan. Surface tension measurements using an oscillating drop method was attempted in low gravity using a parabolic flight of the NASA KC-135 aircraft. Combined levitation and microgravity, which can provide a contamination-free and undercooled condition. is recommended as a novel approach to obtain missing thermophysical property data on undercooled melts of semiconductors.Paper presented at the Fourth International Workshop on Subsecond Thermophysics, June 27–29. 1995. Köln, Germany. 相似文献
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利用冷却塔供冷技术的初探 总被引:7,自引:0,他引:7
林宏 《制冷空调与电力机械》2002,23(3):19-21
介绍了冷却塔水侧免费供冷的工作原理,主要系统形式及系统设计中应注意的几个问题,通过工程经济性比较,阐明冷却塔水侧免费供冷节能经济的优越性。 相似文献
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《Science and Technology of Advanced Materials》2002,3(1):1-27
Recent strong demands for optoelectronic communication and portable telephones have encouraged engineers to develop optoelectronic devices, microwave devices, and high-speed devices using hetero-structural GaAs-based compound semiconductors. Although the GaAs crystal growth techniques had reached a level to control the compositional stoichiometry and crystal defects on a nearly atomic scale by the advanced techniques such as molecular beam epitaxy and metal organic chemical vapor deposition techniques, development of ohmic contact materials (which play a key role to inject external electric current from the metals to the semiconductors) was still on a trial-and-error basis.Our research efforts have been focused to develop low resistance, refractory ohmic contact materials to n-type GaAs using the deposition and annealing techniques, and it was found the growth of homo-or hetero-epitaxial intermediate semiconductor layers (ISL) on the GaAs surface was essential for the low resistance ohmic contact formation. In this paper, two typical examples of ohmic contact materials developed by forming ISL were given. The one was refractory NiGe-based ohmic contact material, which was developed by forming the homo-epitaxial ISL doped heavily with donors. This heavily doped ISL was discovered to be formed through the regrowth mechanism of GaAs layers at the NiGe/GaAs interfaces during annealing at elevated temperatures. To reduce the contact resistance further down to a value required by the device designers, an addition of small amounts of third elements to NiGe, which have strong binding energy with Ga, was found to be essential. These third elements contributed to increase the carrier concentration in ISL. The low resistance ohmic contact materials developed by forming homo-epitaxial ISL were Ni/M/Ge where a slash ‘/’ denotes the deposition sequence and M is an extremely thin (∼5 nm) layer of Au, Ag, Pd, Pt or In. The other was refractory InxGa1−xAs-based ohmic contact materials which were developed by forming the hetero-epitaxial ISL with low Schottky barrier to the contacting metals by growing the InxGa1−xAs layers on the GaAs substrate by sputter-depositing InxGa1−xAs targets and subsequently annealing at elevated temperatures. To reduce the contact resistance, it was found that this InxGa1−xAs (ISL) layer had to have In compositional gradient normal to the GaAs surface: the In concentration being rich at the metal/InxGa1−xAs interface and poor close to the InxGa1−xAs/GaAs interface. This concentration graded ISL reduced both the barrier heights at the metal/ISL and ISL/GaAs interfaces and reduced the contact resistance. The ohmic contact materials developed by forming hetero-epitaxial ISL was In0.7Ga0.3As/Ni/WN2/W. These contact materials formed refractory compounds at the interfaces, which was also found to be essential to improve thermal stability of ohmic contacts used in the GaAs devices. 相似文献
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《中国工程学刊》2012,35(5):579-587
The micro-explosion of a water-in-oil compound drop, without emulsification, was investigated experimentally. The compound drop, composed of a water core encased by an n-hexadecane shell, was suspended and heated to micro-explosion. The heating process and the micro-explosion behavior were recorded by a high-speed video system, and the temperature history of the compound drop was measured under three ambient temperatures, namely 320°C, 400°C and 500°C. The behaviors of the micro-explosion were grouped into three modes, namely direct explosion, partial explosion, and swelling, according to the outcomes of micro-explosion recorded by the high-speed video camera. At an ambient temperature of 400°C or 500°C, the micro-explosion onset time was observed to increase with the micro-explosion temperature; but this trend was not as obvious for the ambient temperature of 320°C. The intensity, judged from the production of secondary drops, of the micro-explosion rose as the micro-explosion time lengthened because the accumulation of thermal energy within the oversaturated water core drop grew to a higher extent. 相似文献
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M. M. Martynyuk 《Journal of Engineering Physics and Thermophysics》1986,51(1):857-864
The influence of superheating and explosive boiling of a contact layer of drops on the heat transfer in drop cooling of a wall at a temperature exceeding the temperature of achievable heating of the liquid is considered.Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 51, No. 1, pp. 128–136, July, 1986. 相似文献
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I. Egry 《Journal of Materials Science》2005,40(9-10):2239-2243
Under microgravity conditions the equilibrium shape of a compound drop, consisting of two immiscible mutually wetting liquids, is given by a spherical liquid core, encapsulated by the second liquid phase. Due to energy considerations, the outer liquid is the one with the lower (vapour-liquid) surface tension. The oscillation spectrum of such a compound drop corresponds to that of two coupled oscillators, one being driven by the surface tension, while the other is due to the interfacial (liquid-liquid) tension between the two immiscible liquids. Therefore, in principle, the values of both, the surface and the interfacial tension, can be derived from the frequencies of the coupled oscillations. In this paper, an analytic expression is presented, relating the frequency spectrum to the surface and interfacial tension, respectively. In addition, the concept for technical realisation using electromagnetic levitation and copper-cobalt as a model system, is discussed. 相似文献
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A Sen Gupta 《Bulletin of Materials Science》1990,13(1-2):89-94
Single crystals of GaP and InSb were irradiated by 3 MeV electrons at 20 K to a total dose of 4 × 1018
e
−/cm2. Isochronal annealing in the temperature region 77–650 K followed the irradiation. In GaP, the positron lifetime measurement
indicated the presence of irradiation-induced vacancies in the Ga-sublattice. The vacancies disappeared at two stages observed
in temperature ranges 200–300 and 450–550 K. In InSb the positron lifetime was found to increase by 8 ps compared to that
in as-grown crystals (i.e. 282±2 ps) after irradiation. The increase indicated the presence of irradiation-induced defects;
the crystal was found to recover until 350 K with a sharp annealing stage at 250–350 K. 相似文献
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冷却塔供冷系统设计中应该注意的问题 总被引:3,自引:0,他引:3
针对冷却塔供冷系统中的供冷形式的选择、供水温度的选择、切换温度的确定、冷水温度的控制以及冷却水泵与系统的匹配等问题进行讨论。 相似文献
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从力学、耐热、传热及经济性等方面对冷却塔中导热塑料管替代铜管的可行性进行介绍和分析。指出冷却塔中采用导热塑料管能够大大降低耗铜量。 相似文献
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S. P. Fisenko 《Journal of Engineering Physics and Thermophysics》1993,64(2):119-123
Mathematical modeling of the processes of heat and mass transfer in transpiration cooling of water droplets is carried out. In a self-consistent approximation the variation of the temperature and density of the water vapor in the vapor-air mixture of a flowing droplet as it falls in the water distributing space of a cooling tower is taken into account.Academic Scientific Complex A. V. Luikov Institute of Heat and Mass Transfer, Academy of Sciences of Belarris Minsk. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 64, No. 2, pp. 154–159, February, 1993. 相似文献