Mechanism for the high voltage photovoltaic effect in ceramic ferroelectrics

The high-voltage photo-emf seen in poled ferroelectric ceramics is explained as the result of light-induced carriers screening an internal field within the bulk of individual grains. The internal field itself is explained as the result of the shielding by equilibrium carriers of the potential produced by the spontaneous polarization. Less-than-band-gap emf’s are produced across individual grains; these emf’s add in ceramics to produce the high-voltage photo-emf. A model yields the polarity and magnitude of the photo-emf, the dependence on temperature, remanent and spontaneous polarization, dielectric constant and grain size. The calculated and experimental results are in general agreement.     

pMOSFET中栅控产生电流的衬底偏压影响研究

研究了pMOSFET中栅控产生电流(GD)的衬底偏压特性.衬底施加负偏压后,GD电流峰值变小;衬底加正向偏压后,GD电流峰值增大.这归因于衬底偏压VB调制了MOSFET的栅控产生电流中最大产生率,并求出了衬底偏压作用系数为0.3.考虑VB对漏PN结的作用,建立了包含衬底偏压的产生电流模型.基于该模型的深入分析,很好地解释了衬底负偏压比衬底正偏压对产生电流的影响大的实验结果.     

Organic–Inorganic Perovskite Light‐Emitting Electrochemical Cells with a Large Capacitance

While perovskite light‐emitting diodes typically made with high work function anodes and low work function cathodes have recently gained intense interests. Perovskite light‐emitting devices with two high work function electrodes with interesting features are demonstrated here. Firstly, electroluminescence can be easily obtained from both forward and reverse biases. Secondly, the results of impedance spectroscopy indicate that the ionic conductivity in the iodide perovskite (CH₃NH₃PbI₃) is large with a value of ≈10^?8 S cm^?1. Thirdly, the shift of the emission spectrum in the mixed halide perovskite (CH₃NH₃PbI_3?xBr_x) light‐emitting devices indicates that I^? ions are mobile in the perovskites. Fourthly, this work shows that the accumulated ions at the interfaces result in a large capacitance (≈100 μF cm^?2). The above results conclusively prove that the organic–inorganic halide perovskites are solid electrolytes with mixed ionic and electronic conductivity and the light‐emitting device is a light‐emitting electrochemical cell. The work also suggests that the organic–inorganic halide perovskites are potential energy‐storage materials, which may be applicable in the field of solid‐state supercapacitors and batteries.     

Capacitance-voltage analysis of a high-k dielectric on silicon

正Device characteristics of TiO_2 gate dielectrics deposited by a sol-gel method and DC sputtering method on a P-type silicon wafer are reported.Metal-oxide-semiconductor capacitors with Al as the top electrode were fabricated to study the electrical properties of TiO_2 films.The films were physically characterized by using X-ray diffraction,a capacitor voltage measurement,scanning electron microscopy,and by spectroscopy ellipsometry.The XRD and DST-TG indicate the presence of an anatase TiO_2 phase in the film.Films deposited at higher temperatures showed better crystallinity.The dielectric constant calculated using the capacitance voltage measurement was found to be 18 and 73 for sputtering and sol-gel samples respectively.The refractive indices of the films were found to be 2.16 for sputtering and 2.42 for sol-gel samples.     

A Large Magnetoresistance Effect in p–n Junction Devices by the Space‐Charge Effect

The finding of an extremely large magnetoresistance effect on silicon based p–n junction with vertical geometry over a wide range of temperatures and magnetic fields is reported. A 2500% magnetoresistance ratio of the Si p–n junction is observed at room temperature with a magnetic field of 5 T and the applied bias voltage of only 6 V, while a magnetoresistance ratio of 25 000% is achieved at 100 K. The current‐voltage (I–V) behaviors under various external magnetic fields obey an exponential relationship, and the magnetoresistance effect is significantly enhanced by both contributions of the electric field inhomogeneity and carrier concentrations variation. Theoretical analysis using classical p–n junction transport equation is adapted to describe the I–V curves of the p–n junction at different magnetic fields and reveals that the large magnetoresistance effect origins from a change of space‐charge region in the p–n junction induced by external magnetic field. The results indicate that the conventional p–n junction is proposed to be used as a multifunctional material based on the interplay between electronic and magnetic response, which is significant for future magneto‐electronics in the semiconductor industry.     

Kinetic Monte Carlo Simulations of Anisotropic Lithium Intercalation into LixFePO4 Electrode Nanocrystals

The kinetic anisotropy of lithium ion adsorption and lithium absorption for Li_xFePO₄ olivine nanocrystals is simulated and reported. The kinetics depend on the orientation of the electrolyte/Li_xFePO₄ interface with respect to the far‐field ionic flux. As a consequence of these kinetics and a Li miscibility gap in Li_xFePO₄, the particle geometry and orientation also have an effect on the morphology of the two‐phase evolution. These processes accompany the charge and discharge behavior in battery microstructures and a direct influence on battery behavior is suggested. A kinetic Monte Carlo (KMC) algorithm based on a cathode particle rigid lattice is used to simulate the kinetics in this system. In these simulations the adsorption kinetics of the electrolyte/electrode interface are treated by coupling the normal flux outside the particle from a continuum numerical simulation of Li‐ion diffusion in the electrolyte to the atomistic KMC model within the particle. The interfacial reaction depends on local concentration and the potential drop at the interface via the Butler–Volmer (B–V) relation. The atomic potentials for the KMC simulation are derived from empirical solubility limits (as determined by OCV measurements). The main results show that the galvanostatic lithium‐uptake/cell‐voltage has three regimes: 1) a decreasing cell potential for Li‐insertion into a Li‐poor phase; 2) a nearly constant potential after the nucleation of a Li‐rich phase Li_(1‐β)FePO₄; 3) a decreasing cell potential after the Li‐poor phase has been evolved into a Li‐rich phase. The behavior in the second regime is sensitive to crystallographic orientation.     

Controllable threshold voltage of a pentacene field-effect transistor based on a double-dielectric structure

The authors report controllable threshold voltage (V_th) in a pentacene field-effect transistor based on a double-dielectric structure of poly(perfluoroalkenyl vinyl ether) (CYTOP) and SiO₂. When a positive switching voltage is applied to the gate electrode of the transistor, electrons traverse through the pentacene and CYTOP layers and subsequently trapped at the CYTOP/SiO₂ interface. The trapped electrons induce accumulation of additional holes in the pentacene conducting channel, resulting in a large V_th shift from ?4.4 to +4.6 V. By applying a negative switching voltage, the trapped electrons are removed from the CYTOP/SiO₂ interface, resulting in V_th returning to an initial value. The V_th shift caused by this floating gate-like effect is reversible and very time-stable allowing the transistor to be applicable to a nonvolatile memory that has excellent retention stability of stored data.     

不同加载压力下PZT-95/5铁电陶瓷放电特性研究

利用轻气炮作为加载手段,对PZT-95/5铁电陶瓷进行冲击波压缩,以实现陶瓷受激相变放电。在涵盖了PZT-95/5陶瓷的相变压力点及雨贡纽弹性极限压力点的加载压力区间内,对其放电特性进行了实验研究。获得了不同加载压力下的PZT-95/5铁电陶瓷耐电击穿强度及剩余极化强度等特征参数,并分析和讨论了PZT-95/5在不同加载压力作用下的放电特性。     

Analytical Charge Voltage Model in MOS Inversion Layer Based on Space Charge Capacitance

The2 -Dimensional nature of the inversion layer carrier in MOS structure is well-known[1 ,2 ] and the Quantum Mechanical Effects(QMEs) on MOS structure' s behaviorhave been extensively studied by numerical survey by self-consistent so...     

Analytical Charge Voltage Model in MOS Inversion Layer Based on Space Charge Capacitance

The concept of Space Charge Capacitance (SCC) is proposed and used to make a novel analytical charge model of quantized inversion layer in MOS structures. Based on SCC,continuous expressions of surface potential and inversion layer carrier density are derived.Quantum mechanical effects on both inversion layer carrier density and surface potential are extensively included. The accuracy of the model is verified by the numerical solution to Schrodinger and Poisson equation and the model is demonstrated,too.     

0.275μm nMOST's中陷阱辅助隧穿电流对漏端LDD区DCIV谱峰的影响

应用direct-current current voltage(DCIV)和电荷泵(change pumping)技术研究了LDD nMOST's在热电子应力下产生的界面陷阱.测试和分析的结果显示,一股额外的漏端电流影响了DCIV谱峰中表征漏区的D峰.这股电流主要是陷阱辅助隧穿电流.     

0.275μm nMOST''''s中陷阱辅助隧穿电流对漏端LDD区DCIV谱峰的影响(英文)

应用 direct- currentcurrent voltage(DCIV)和电荷泵 (change pum ping)技术研究了 L DD n MOST’s在热电子应力下产生的界面陷阱 .测试和分析的结果显示 ,一股额外的漏端电流影响了 DCIV谱峰中表征漏区的 D峰 .这股电流主要是陷阱辅助隧穿电流 .     

Strong Surface‐Termination Effect on Electroresistance in Ferroelectric Tunnel Junctions

Tunnel electroresistance in ferroelectric tunnel junctions (FTJs) has attracted considerable interest, because of a promising application to nonvolatile memories. Development of ferroelectric thin‐film devices requires atomic‐scale band‐structure engineering based on depolarization‐field effects at interfaces. By using FTJs consisting of ultrathin layers of the prototypical ferroelectric BaTiO₃, it is demonstrated that the surface termination of the ferroelectric in contact with a simple‐metal electrode critically affects properties of electroresistance. BaTiO₃ barrier‐layers with TiO₂ or BaO terminations show opposing relationships between the polarization direction and the resistance state. The resistance‐switching ratio in the junctions can be remarkably enhanced up to 10⁵% at room temperature, by artificially controlling the fraction of BaO termination. These results are explained in terms of the termination dependence of the depolarization field that is generated by a dead layer and imperfect charge screening. The findings on the mechanism of tunnel electroresistance should lead to performance improvements in the devices based on nanoscale ferroelectrics.