Carrier Tunneling from Charge Transfer States in Organic Photovoltaic Cells

Charge transfer (CT) states play a key role in the functioning of organic solar cells; however, understanding the mechanism by which CT states dissociate efficiently into free charges remain a conceptual challenge. Here, the electric field dependent dynamics of charge generation in planar cyanine/fullerene photovoltaic cells is probed over a wide temperature range using time-resolved Stark effect experiments, transient absorption, and photocurrent measurements. Results indicate that dissociation of thermalized CT states is the rate-limiting step for all temperatures. The dissociation rate strongly depends on the field, but is temperature independent. The results also suggest that the yield of generated charges is temperature independent. Model electrostatic calculations illustrate that specific orientations of the cyanine crystal relative to C₆₀ create a repulsive potential for an electron near the interface that is largely due to the quadrupole moment of the unit cell. In combination with the electron-hole coulomb attraction and the electric field-induced barrier lowering, a high-energy potential barrier forms with a narrow width of a few nanometers. It is proposed that charge separation occurs via a field-dependent electron tunneling mechanism through that barrier, which is temperature independent. The results support a thus far overlooked pathway for CT state dissociation via carrier tunneling.     

Photoconductivity of C60 as an Origin of Bias‐Dependent Photocurrent in Organic Photovoltaics

The bulk‐ionized photoconductivity of C₆₀ is reported as an origin of the bias‐dependent linear change of the photocurrent in copper phthalocyanine (CuPc)/C₆₀ planar heterojunction solar cells, based on the observation of the variation of the bias‐dependent photocurrent on excitation wavelengths and the thickness‐dependent photocurrent of the C₆₀ layer. A theoretical model, which is a combination of the Braun‐Onsager model for the dissociation of excitons at the donor/acceptor interface and the Onsager model for the bulk ionization of excitons in the C₆₀ layer, describes the bias‐dependent photocurrent in the devices very well. The bulk‐ionized photoconductivity of C₆₀ must generally contribute to the photocurrent in organic photovoltaics, since fullerene and fullerene derivatives are widely used in these devices.     

Nongeminate and Geminate Recombination in PTB7:PCBM Solar Cells

A combination of transient photovoltage (TPV), voltage dependent charge extraction (CE), and time delayed collection field (TDCF) measurements is applied to poly[[4,8‐bis[(2‐ethylhexyl)oxy]benzo[1,2‐b:4,5‐b']dithiophene‐2,6‐diyl] [3‐fluoro‐2‐[(2‐ethylhexyl)carbonyl] thieno[3,4‐b]thiophenediyl]] (PTB7):[6,6]‐phenyl‐C71‐butyric acid (PC₇₁BM) bulk heterojunction solar cells to analyze the limitations of photovoltaic performance. Devices are processed from pure chlorobenzene (CB) solution and a subset is optimized with 1,8‐diiodooctane (DIO) as co‐solvent. The dramatic changes in device performance are discussed with respect to the dominating loss processes. While in the devices processed from CB solution severe geminate and nongeminate recombination is observed, the use of DIO facilitates efficient polaron pair dissociation and minimizes geminate recombination. Thus, from the determined charge carrier decay rate under open circuit conditions and the voltage dependent charge carrier densities n(V), the nongeminate loss current J_loss of the samples with DIO alone enables the reconstruction of the current/voltage (j/V) characteristics across the whole operational voltage range. Geminate and nongeminate losses are considered to describe the j/V response of cells prepared without additive, but lead to a clearly overestimated device performance. The deviation between measured and reconstructed j/V characteristics is attributed to trapped charges in isolated domains of pure fullerene phases.     

Dielectric–Semiconductor Interface Limits Charge Carrier Motion at Elevated Temperatures and Large Carrier Densities in a High‐Mobility Organic Semiconductor

The fundamental nature of charge transport in highly ordered organic semiconductors is under constant debate. At cryogenic temperatures, effects within the semiconductor such as traps or the interaction of charge carriers with the insulating substrate (dipolar disorder or Fröhlich polarons) are known to limit carrier motion. In comparison, at elevated temperatures, where charge carrier mobility often also decreases as function of temperature, phonon scattering or dynamic disorder are frequently discussed mechanisms, but the exact microscopic cause that limits carrier motion is debated. Here, the mobility in the temperature range between 200 and 420 K as function of carrier density is explored in highly ordered perylene‐diimide from 3 to 9 nm thin films. It is observed that above room temperature increasing the gate electric field or decreasing the semiconducting film thickness leads to a suppression of the charge carrier mobility. Via X‐ray diffraction measurements at various temperatures and electric fields, changes of the thin film structure are excluded as cause for the observed mobility decrease. The experimental findings point toward scattering sites or traps at the semiconductor–dielectric interface, or in the dielectric as limiting factor for carrier mobility, whose role is usually neglected at elevated temperatures.     

有机电致发光器件中复合发光的电场和温度关系

通过分析有机电致发光器件中载流子注入、输运、激子的解离与复合过程，提出了激子解离与复合的理论模型。基于电流连续性方程和Poisson方程，给出了激子复合几率、电流密度及复合效率表达式。研究了外加电压和温度对器件中激子的复合几率及在各种接触条件下外加电压对器件电流和复合效率的影响。结果表明：(1)在一个较宽的注入势垒范围内，复合几率随电场和温度的升高而降低；(2)固定阴极势垒，而阳极势垒由小变大时，器件电流由接触限制向空间电荷限制转变；(3)复合效率随外加电压升高先增加，当电压达一临界值时而陡降，并存在一个最佳的注入势垒值。其计算值与所报道的实验结果相符合。     

Monomolecular and Bimolecular Recombination of Electron–Hole Pairs at the Interface of a Bilayer Organic Solar Cell

While it has been argued that field‐dependent geminate pair recombination (GR) is important, this process is often disregarded when analyzing the recombination kinetics in bulk heterojunction organic solar cells (OSCs). To differentiate between the contributions of GR and nongeminate recombination (NGR) the authors study bilayer OSCs using either a PCDTBT‐type polymer layer with a thickness from 14 to 66 nm or a 60 nm thick p‐DTS(FBTTh₂)₂ layer as donor material and C₆₀ as acceptor. The authors measure JV‐characteristics as a function of intensity and charge‐extraction‐by‐linearly‐increasing‐voltage‐type hole mobilities. The experiments have been complemented by Monte Carlo simulations. The authors find that fill factor (FF) decreases with increasing donor layer thickness (L_p) even at the lowest light intensities where geminate recombination dominates. The authors interpret this in terms of thickness dependent back diffusion of holes toward their siblings at the donor–acceptor interface that are already beyond the Langevin capture sphere rather than to charge accumulation at the donor–acceptor interface. This effect is absent in the p‐DTS(FBTTh₂)₂ diode in which the hole mobility is by two orders of magnitude higher. At higher light intensities, NGR occurs as evidenced by the evolution of s‐shape of the JV‐curves and the concomitant additional decrease of the FF with increasing layer thickness.     

A Densely and Uniformly Packed Organic Semiconductor Based on Annelated β‐Trithiophenes for High‐Performance Thin Film Transistors

A novel semiconductor based on annelated β‐trithiophenes is presented, possessing an extraordinary compressed packing mode combining edge‐to‐face π–π interactions and S…S interactions in single crystals, which is favorable for more effective charge transporting. Accordingly, the device incorporating this semiconductor shows remarkably high charge carrier mobility, as high as 0.89 cm² V^?1 s^?1, and an on/off ratio of 4.6 × 10⁷ for vacuum‐deposited thin films.     

Enhancement of n‐Type Organic Field‐Effect Transistor Performances through Surface Doping with Aminosilanes

Dopants, i.e., electronically active impurities, are added to organic semiconductor materials to control the material's Fermi level and conductivity, to improve injection at the device contacts, or to fill trap states in the active device layers and interfaces. In contrast to bulk doping as achieved by blending or co‐deposition of dopant and semiconductor, surface doping has a lower propensity to introduce additional traps or scattering centers or to even alter the layer morphology relative to the undoped active material layers. In this study, the electrical effects of a very simple, post‐device‐fabrication surface doping process involving various amine group–containing alkoxysilanes on the performance of organic field‐effect transistors (OFETs) made from the well‐known n‐type materials PTCDI‐C8 and N2200 are researched. It is demonstrated that OFETs doped in such a way generally show enhanced characteristics (up to 10 times mobility increase and a significant reduction in threshold voltage) without any adverse effects on the devices' on/off ratio. It is also shown that the efficiency of the doping process is linked to the number of amine groups.     

High Mobility and Luminescent Efficiency in Organic Single‐Crystal Light‐Emitting Transistors

A high‐performance ambipolar light‐emitting transistor (LET) that has high hole and electron mobilities and excellent luminescence characteristics is described. By using this device, a conspicuous light‐confined edge emission and current‐density‐dependent spectral evolution are observed. These findings will result in broader utilization of device potential and they provide a promising route for realizing electrically driven organic lasers.     

Diketopyrrolopyrrole Organic Thin‐Film Transistors: Impact of Alkyl Substituents and Tolerance of Ethylhexyl Stereoisomers

Bis(thiophen‐2‐yl)‐diketopyrrolopyrrole (DPP) dyes bearing various alkyl substituents at the amide positions (n‐butyl, n‐pentyl, n‐hexyl, n‐heptyl, n‐octyl, 2‐ethylhexyl) and chlorine (Cl), bromine (Br), or cyano (CN) substituents at the thiophene positions have been synthesized and investigated with regard to their molecular and semiconducting properties. Intense absorption, strong fluorescence, and reversible oxidation and reduction processes are common to all of these dyes. Their characterization as organic semiconductors in vacuum‐processed thin‐film transistors reveals p‐channel operation with field‐effect mobilities ranging from 0.01 to 0.7 cm² V^?1 s^?1. The highest mobility is found for the DPP dyes bearing the 2‐ethylhexyl substituents, which is surprising, considering that as a result of the chiral substituents, this material is a mixture of (R,R), (S,S), and (R,S) stereoisomers. The high carrier mobility in the films of the DPPs bearing stereoisomerically inhomogeneous ethylhexyl groups is rationalized here by single‐crystal X‐ray diffraction (XRD) analysis in combination with XRD and atomic force microscopy studies on thin films, which reveal the presence of slightly different 2D layer arrangements for the n‐alkyl and the 2‐ethylhexyl derivatives. For the cyano‐substituted DPPs possessing the lowest LUMO levels, ambipolar transport characteristics are observed.     

真空高阻区熔Si单晶中的微缺陷及其少子寿命

通过在Ar气氛及真空环境中进行的高阻区熔Si单晶生长实验,分析了晶体直径、晶体生长环境及晶体生长速率对晶体中微缺陷及少子寿命的影响及产生这种影响的原因.单晶生长实验表明,与在Ar气氛下的单晶生长相比,在真空环境下采用较低的晶体生长速率即可生长出无漩涡缺陷的单晶,而当晶体生长速度较高时,尽管可以消除漩涡,但单晶的少子寿命却有明显的下降.     

Star-Shaped Organic Semiconductor with Extraordinary Thermomechanical Property and Solution Processability for Stable Perovskite Solar Cells

Achieving the desired thermomechanical properties for highly solution-processable organic semiconductors is challenging but crucial for heat tolerance of emerging optoelectronic devices. To this end, the successful synthesis of triphenylene–ethylenedioxythiophene-dimethoxytriphenylamine (TP–ETPA), a star-shaped organic semiconductor, is reported through a direct arylation reaction that involves ETPA, an electron donor, being grafted densely onto TP, which possesses six electron-equivalent functionalization sites. Remarkably, TP–ETPA exhibits significantly improved hole mobility compared to 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)-9,9′-spirobifluorene (spiro-OMeTAD) at a given hole density, owing to its lower energetic disorder, larger average centroid distance, and smaller reorganization energy. TP–ETPA, with a molecular weight of 2888 Da and lacking flexible chains, demonstrates extraordinary solubility in nonpolar solvents, enabling the formation of dense, pinhole-free films through solution codeposition with an air-doping promoter. By utilizing the p-doped TP–ETPA composite as the hole transport layer, perovskite solar cells with an average power conversion efficiency of 23.4% are successfully fabricated. Notably, these devices display significantly enhanced operational stability and thermal stability at 85 °C. Molecular dynamics simulations reveal that the TP–ETPA-based hole transport layer possesses a high cohesive energy density, resulting in a large elastic modulus and slow diffusion of external species.     

Hybrid Organic/PbS Quantum Dot Bilayer Photodetector with Low Dark Current and High Detectivity

Owing to their ease of fabrication, low cost, and high flexibility, organic materials have attracted great interests in photodetector (PD) applications. However, suffering from large dark current, small photocurrent, low on–off ratio, and low sensitivity, performances of bare organic‐based PDs are not satisfactory. Integrating organic materials with other novel semiconductor materials offers an opportunity to overcome these drawbacks. Here, a lateral hybrid organic/lead sulfide (PbS) quantum dot bilayer PD is designed and fabricated, which significantly suppresses the dark current and enhances the photocurrent, leading to improved light detecting capability. Meanwhile, the bilayer PD can be made on a flexible polyimide substrate.     

Delayed Fluorescence Emitter Enables Near 17% Efficiency Ternary Organic Solar Cells with Enhanced Storage Stability and Reduced Recombination Energy Loss

Charge transfer state (CT) plays an important role in exciton diffusion, dissociation, and charge recombination mechanisms. Enhancing the utilization and suppressing the recombination process of CT excitons is a promising way to improve the performance of organic solar cells (OSCs). Here, an effective method is presented via introducing a delayed fluorescence (DF) emitter 3,4‐bis(4‐(diphenylamino)phenyl)acenaphtho[1,2‐b]pyrazine‐8,9‐dicarbonitrile (APDC‐TPDA) in OSCs. The long‐lifetime singlet excitons on APDC‐TPDA can transfer to polymer donors to prolong exciton lifetime, which ensures sufficient time for diffusion and dissociation. Concurrently, the high triplet energy level (T₁) of the DF material can also prevent the reverse energy transfer from CT to T₁. APDC‐TPDA‐containing ternary OSCs shows a high PCE of 16.96% with a reduced recombination energy loss of 0.46 eV. It is noteworthy that the ternary OSC also exhibits superior storage stability. After 55 days of storage, the PCE of the ternary OSC still retains about 96% of its primitive state. Furthermore, this ternary strategy is efficient and universally applicable to OSCs, and positive results can be obtained in different systems with different DF emitters. These results indicate that the ternary strategy provides a new design idea to realize high performance OSCs.     

Efficient DPP Donor and Nonfullerene Acceptor Organic Solar Cells with High Photon‐to‐Current Ratio and Low Energetic Loss

The high crystallinity and ability to harvest near‐infrared photons make diketopyrrolopyrrole (DPP)‐based polymers one of the most promising donors for high performing organic solar cells (OSCs). However, DPP‐based OSC devices still suffer from the trade‐off between energetic loss (E_loss) and maximum external quantum efficiency (EQE_max), which significantly hinders their potential. Thus far, the replacement of fullerenes with small molecule acceptors did not wisdom the performance development of DPP‐donor‐based solar cells due to severe charge recombination issues. In this work, efficient DPP‐based solar cells are reported using low bandgap fused ring electron acceptor, IEICO‐4F. PBDTT‐DPP:IEICO‐4F OSC devices deliver a champion power conversion efficiency of 9.66% with successful interface engineering along with low E_loss of 0.57 eV and a high EQE_max (>70%).     

An Electron Acceptor with Broad Visible–NIR Absorption and Unique Solid State Packing for As‐Cast High Performance Binary Organic Solar Cells

A novel acceptor–donor–acceptor (A–D–A) type electron acceptor 6TIC‐4F with terthieno[3,2‐b]thiophene (6T) as the core unit is rationally designed and synthesized, which exhibits an extraordinarily narrow bandgap (≈1.24 eV) and strong absorption between 650 and 1000 nm. X‐ray crystallographic analysis reveals that it has unique intermolecular π–π stacking. The solar cells based on the as‐cast poly[(2,6‐(4,8‐bis(5‐(2‐ethylhexyl)thiophen‐2‐yl)‐benzo[1,2‐b:4,5‐b′]dithiophene))‐alt‐(5,5‐(1′,3′‐di‐2‐thienyl‐5′,7′‐bis(2‐ethylhexyl)benzo[1′,2′‐c:4′,5′‐c′]dithiophene‐4,8‐dione))]) (PBDB‐T): 6TIC‐4F binary blends exhibit an excellent power conversion efficiency (PCE) of 11.14% with a high J_SC of 23.00 mA cm^?2, and a high fill factor of 0.67, which represents one of the best PCE values for low bandgap (E_g < 1.3 eV)–based organic solar cells.     

Efficient Nondoped Blue Fluorescent Organic Light‐Emitting Diodes (OLEDs) with a High External Quantum Efficiency of 9.4% @ 1000 cd m−2 Based on Phenanthroimidazole−Anthracene Derivative

Organic light‐emitting diodes (OLEDs) can promise flexible, light weight, energy conservation, and many other advantages for next‐generation display and lighting applications. However, achieving efficient blue electroluminescence still remains a challenge. Though both phosphorescent and thermally activated delayed fluorescence materials can realize high‐efficiency via effective triplet utilization, they need to be doped into appropriate host materials and often suffer from certain degree of efficiency roll‐off. Therefore, developing efficient blue‐emitting materials suitable for nondoped device with little efficiency roll‐off is of great significance in terms of practical applications. Herein, a phenanthroimidazole?anthracene blue‐emitting material is reported that can attain high efficiency at high luminescence in nondoped OLEDs. The maximum external quantum efficiency (EQE) of nondoped device is 9.44% which is acquired at the luminescence of 1000 cd m^?2. The EQE is still as high as 8.09% even the luminescence reaches 10 000 cd m^?2. The maximum luminescence is ≈57 000 cd m^?2. The electroluminescence (EL) spectrum shows an emission peak of 470 nm and the Commission International de L'Eclairage (CIE) coordinates is (0.14, 0.19) at the voltage of 7 V. To the best of the knowledge, this is among the best results of nondoped blue EL devices.     

High Efficiency Deep‐Blue Phosphorescent Organic Light‐Emitting Diodes with CIE x,y (≤ 0.15) and Low Efficiency Roll‐Off by Employing a High Triplet Energy Bipolar Host Material

Recently, bipolar host materials are the most promising candidates for achieving high performance phosphorescent organic light‐emitting diodes (PHOLEDs) in order to maximize recombination efficiency. However, the development of host material with high triplet energy (E _T) is still a great challenge to date to overcome the limitations associated with the present PHOLEDs. Herein, a highly efficient donor‐π‐acceptor (D‐π‐A) type bipolar host (4′‐(9H‐carbazol‐9‐yl)‐2,2′‐dimethyl‐[1,1′‐biphenyl]‐4‐yl)diphenylphosphine oxide (m‐CBPPO) comprising of carbazole, 2,2′‐dimethylbiphenyl and diphenylphosphoryl as D‐π‐A unit, respectively, is developed. Interestingly, a high E _T of 3.02 eV is observed for m‐CBPPO due to highly twisted conformation. Furthermore, the new host material is incorporated in PHOLEDs as emissive layer with a new carbene type Ir(cb)₃ material as a deep‐blue emitter. The optimized devices show an excellent external quantum efficiency (EQE) of 24.8% with a notable Commission internationale de l'éclairage (x, y) ≤ 0.15, (0.136, 0.138) and high electroluminescence performance with extremely low efficiency roll‐off. Overall, the above EQE is the highest reported for deep‐blue PHOLEDs with very low efficiency roll‐off and also indicate the importance of appropriate host for the development of high performance deep‐blue PHOLEDs.