Al-Mg-Mn-Sc铸态合金退火行为研究

通过水冷铜模急冷铸造法制备了Al-5.5Mg-0.4Mn-0.25Sc合金,研究了该铸态合金在不同退火温度下的硬度变化,并通过金相显微镜和透射电镜探讨合金中Al3Sc粒子的存在形式和形成机理.结果 表明:添加质量分数为0.25％的Sc对铸态合金晶粒组织的细化并没有产生太大的贡献,晶粒细化是由于快速凝固技术所带来的作用,...     

Ti2AlNb合金表面射频溅射Al/Al2O3复合层的抗热震性能

为进一步提高Ti₂AlNb合金的抗高温氧化性能,在其表面射频溅射Al/Al₂O₃复合层,并于650℃下进行了抗热震性能研究,采用扫描电镜及能谱仪观察复合层形貌并分析其成分。结果表明:Al/Al₂O₃复合层平整致密,无贯穿裂纹,复合层中Al₂O₃层厚约1μm,Al层厚约14μm;热震循环50次时复合层表面出现了微小裂纹,随着热震循环次数增加,裂纹不断扩展,表层Al₂O₃颗粒增大;Al/Al₂O₃复合层能有效提高Ti₂AlNb合金的抗热震性能。     

La(Mg1/2Ti1/2)O3粉末的EDTA凝胶燃烧法合成研究

利用EDTA凝胶燃烧方法直接合成了单相的La(Mg1/2Ti1/2)O3粉末.通过调整La(NO3)3,Mg(NO3)2·6H2O,Ti(OC4H9)4和EDTA的溶液的pH值,获得了透明的凝胶.在250℃加热时,凝胶燃烧,直接转化为含少量炭化物的La(Mg1/2Ti1/2)O3粉末.利用XRD、FT-IR,SEM和激光粒径分析等技术表征了获得的粉末.     

高性能无铅压电材料Ba(Ti0.8Zr0.2)O3-x-(Ba0.7Ca0.3)TiO3单晶和薄膜的制备

具有三相点准同型相界附近成分的Ba(Ti0.8Zr0.2)O3-x(Ba0.7Ca0.3)TiO3无铅压电材料,具有优异的铁电、压电性能,作为一种具有潜在应用前景的无铅压电材料得到广泛关注。利用溶胶-凝胶法制备了该成分的薄膜以及尝试了利用浮区单晶炉的单晶生长工艺。利用XRD对薄膜和生长的晶体样品进行了物相鉴定;用AFM表征了薄膜的表面形貌;用TFAnalyz-er2000HS铁电测试系统测试了其电滞回线;还分析了气氛对晶体生长和紫外-可见透过光谱的影响。     

(1-x)(Mg0.9Co0.1)TiO3-x(Ca0.61La0.26)TiO3陶瓷的微波介电性能（英文）

研究了(1-x)(Mg0.9Co0.1)TiO3-x(Ca0.61La0.26)TiO3(MCT-CLT)体系陶瓷的微波介电性能.目的是通过(Ca0.61La0.26)TiO3(CLT)协调(Mg0.9Co0.1)TiO3(MCT)陶瓷的谐振频率温度系数.实验发现,烧结温度和陶瓷组成对微波介电性能影响显著,当烧结温度为1300℃时,可以获得良好的致密度,当烧结温度超过1300℃时,陶瓷致密度和介电性能下降.此外,随着CLT含量的增加,材料的介电常数增大,品质因数减小.当CLT含量为13%,烧结温度为1300℃,保温2h,(MCCLT)陶瓷具有优良微波介电性能,εr=22.4,Q×f=35000 GHz,τf=-8.7×10-6/℃,从而达到实用要求.     

Al2O3/Al复合材料伪半固态下流变行为的研究

采用等温压缩实验,对Al2O3/Al复合材料在伪半固态下流变行为进行了研究.结果表明,Al2O3/Al复合材料在伪半固态下压缩时的流动应力随实验温度的提高而显著下降;并分析了复合材料伪半固态温度下的流变行为以及其影响因素.     

低温燃烧法制备(W,Mo)C/Al2O3/La2O3复合粉末及性能

为了开发出一种无黏结相硬质合金来减少传统硬质合金中钴元素的应用,采用化学法制备(W,Mo)C/Al₂O₃/La₂O₃。以偏钨酸铵、钼酸铵、硝酸铝、硝酸镧、尿素和葡萄糖为原料,通过低温燃烧法探究硝酸盐和尿素、葡萄糖的不同配比,得出最优配比后还原炭化制备(W,Mo)C/Al₂O₃/La₂O₃粉末。在1500~1800℃经离子烧结制备(W,Mo)C/Al₂O₃/La₂O₃无黏结相材料,研究其力学性能并分析强韧化机制。结果表明:硝酸盐和尿素的最佳摩尔配比为1∶2,硝酸盐和葡萄糖的最佳摩尔配比为1∶0.5,加入葡萄糖后颗粒尺寸减小了0.28μm,比表面积提高了75.64%。致密度、维氏硬度和抗弯强度在1600℃时达到最大值分别为:98.45%,2202HV和1203 MPa,断裂韧度在1500℃时达到最大值为7.52 MPa·m^1/2。由于晶粒的细化及第二相颗粒的增韧的影响,(W,Mo)C/Al₂O₃/La₂O₃在1500~1600℃时以沿晶断裂和穿晶断裂为主;晶粒长大以及孔隙的出现导致(W,Mo)C/Al₂O₃/La₂O₃在1700~1800℃时以沿晶断裂为主。     

添加物对Al2O3-TiC/Ti（C,N）系陶瓷复合材料组织和性能的影响

Al2O3-TiC/Ti(C,N)系陶瓷复合材料具有广阔的应用前景,但综合性能还有待进一步改善。分析讨论了TiC/Ti(C,N)主要成分含量对组织性能的影响,综述了Cr2O3、Y2O3、ZrO2等化合物添加物和Fe、Al、Co、Ni、Mo等金属添加物对Al2O3-TiC/Ti(C,N)系陶瓷复合材料中组织和性能影响的研究结果,并比较分析了其各自的特点。     

Cr7C3 / Ni3Al 复合材料制备过程中碳化铬的溶解再析出行为

将真空常压烧结方法制得的Cr₃C₂-Ni₂Al 复合焊丝堆焊于碳钢表面。分析表明, 在堆焊过程中, 利用氩弧物理热和Ni-Al 反应热, Ni 与Al 化合反应生成Ni₃Al 金属间化合物, Cr₃C₂ 则发生分解, 除少部分[ C]与[Cr ]固溶于Ni₃Al 基体中外, 大部分反应析出更稳定的Cr₇C₃ 相, 其尺寸取决于堆焊层中不同区域的冷却环境,较为均匀地分布于Ni₃Al 基体中。由于Cr 在Ni₃Al 中的固溶度远大于C , 加之Cr₃C₂ 转化为Cr₇C₃ 也造成部分富余的C , 结果造成在该Ni₃Al 表面强化材料焊层中形成石墨相, 其密度轻、熔点高, 主要偏聚于焊层表层。Cr₇C₃ / Ni₃Al 复合材料的室温、高温硬度远高于传统高温耐磨材料Stellite 合金, 该材料有望成为一种新型的高温耐磨表面强化材料。      

MnO2对Ba(Mg1/3Nb2/3)O3微观结构和微波介电性能的影响

研究了MnO2助烧剂对Ba(Mg1/3Nb2/3)O3陶瓷的微观结构和微波介电性能.MnO2可以有效地使Ba(Mg1/3Nb2/3)O3陶瓷的致密化温度由1550℃降低到1400℃左右.随MnO2掺量的增加,Ba(Mg1/3Nb2/3)O3陶瓷的12超晶格衍射峰的强度减弱,但是没有第二相出现.1400℃烧结4h陶瓷的晶粒尺寸在1.5μm左右.MnO2的掺入改善了Ba(Mg1/3Nb2/3)O3陶瓷的微波介电性能,MnO2掺量为1%mol的Ba(Mg1/3Nb2/3)O3陶瓷具有最好的微波介电性能εr≈31.5,Qf=68000,τf=3.11×10-5/℃,这可归功于陶瓷具有相当高的相对密度.     

Microwave dielectric in the Sm(Co1/2Ti1/2)O3-CaTiO3 ceramic system with near-zero temperature coefficient with resonant frequency

The ceramic system prepared by the conventional solid state method was investigated for its microstructures and microwave dielectric properties. To achieve a temperature-stable material, two compounds with negative and positive temperature coefficients were employed to form mixed phases. The microwave dielectric properties are strongly correlated with composition. For practical application, a dielectric constant (ε_r) of 37, a quality factor (Q × f value) of 43,000 GHz and a temperature coefficient of resonant frequency (τ_f) of 1 ppm/°C for 0.6Sm(Co_1/2Ti_1/2)O₃-0.4CaTiO₃ sintered at 1420 °C are proposed.     

Growth and characterization of Ba(Cd1/3Ta2/3)O3 thin films

We have synthesized stoichiometric Ba(Cd_1/3Ta_2/3)O₃ [BCT] (100) dielectric thin films on MgO (100) substrates using Pulsed Laser Deposition. Over 99% of the BCT film was found to be epitaxial [BCT (100) || MgO (100) and BCT (010) || MgO (010)] when grown with an elevated substrate temperature of 635 °C, an enhanced oxygen pressure of 53 Pa and a Cd-enriched BCT target with a 1 mol BCT: 1.5 mol CdO composition. A dielectric constant of 32 was inferred from low-frequency capacitance measurements of a planar interdigital metal pattern. Analysis of ultra violet optical absorption results indicates that BCT has a bandgap of 4.9 eV; while the interference pattern in the visible range is consistent with a refractive index of 2.1. Temperature-dependent electrical measurements indicate that the BCT films have a room temperature conductivity of 3 × 10^− 12 Ω^− 1 cm^− 1 with a thermal activation energy of 0.7 eV. A mean particle size of ~ 100 nm and a root mean square surface roughness of 5 to 6 nm were measured using Atomic Force Microscopy.     

Processing, microstructure and properties of C40 Mo(Si,Al)2/Al2O3 composites

The C40 Mo(Si_0.75Al_0.25)₂/Al₂O₃ composites were prepared by spark plasma sintering (SPS) of mechanically alloyed (MA) powders. The Mo(Si_0.75Al_0.25)₂/0–20 vol.% Al₂O₃ materials, showing micron and submicron composite structure, possess a hardness of 13.9–14.6 GPa but a poor toughness of 1.78–1.80 MPa m^1/2. The addition of 30 vol.% Al₂O₃ leads to the formation of the micron C40 Mo(Si_0.75Al_0.25)₂/Al₂O₃ composite with an intergranular distribution of Al₂O₃, that results in a drop of the hardness to 10.2 GPa and an improvement of the toughness to 3.67 MPa m^1/2. The transition of the cleavage facets to the intergranular fracture with the addition of Al₂O₃ is assumed as the main toughening mechanism.     

Microwave dielectric characteristics of Ba(Mg1/3Ta2/3)O3 ceramics sintered at low-temperatures

The microwave dielectric properties and microstructures of Ba(Mg_1/3Ta_2/3)O₃ (BMT) ceramics sintered at low temperatures with 2–3 wt.% NaF additives were investigated. BMT ceramics sintered at 1340 °C for 3–12 h showed dielectric constants (_r) of 25.5–25.7, Qf values of 41 500–50 400 GHz and temperature coefficients of the resonator frequency (τ_f) of 10.9–21.4 ppm °C⁻¹. The variation of sintering time almost had no effect on the dielectric constant. The Qf value increased and the τ_f decreased with increasing sintering time. The ordering degree of Mg²⁺ and Ta⁵⁺ at B-sites increased with increasing sintering time.     

Polar nanodomains and relaxor behaviour in (1 − x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 crystals with x = 0.3–0.5

Phase transitions and dielectric properties of the (1 − x)Pb(Mg_1/3Nb_2/3)O₃–xPbTiO₃ crystals with x = 0.3–0.5 are studied. The solid solutions in this composition range are shown to be relaxor ferroelectrics. The crystals with low x demonstrate a diffused maximum in the temperature dependences of the dielectric permittivity at T_m. T_m varies with frequency according to the Vogel–Fulcher law. The polarizing microscopy investigations reveal a first-order phase transition from the relaxor phase to the low-temperature ferroelectric phase at T_C, which is several degrees below T_m. The permittivity peak in the crystals with x = 0.5 is sharp, and T_m is equal to T_C and does not depend on frequency, as is typical of the transition from a ferroelectric to an ordinary paraelectric phase. Nevertheless, the relaxor, but not the paraelectric, phase is observed at T > T_m. This conclusion is confirmed by the observation of the temperature behaviour of complex dielectric permittivity at T > T_m, which is typical of relaxors and related to the existence of polar nanodomains.     

Phase developments in the Pb(Zn1/2W1/2)O3-Pb(Zn1/3Ta2/3)O3-Pb(Zn1/3Nb2/3)O3 pseudo-ternary system

The phase stability ranges in the B-site precursor (Zn_1/2W_1/2)O₂-(Zn_1/3Ta_2/3)O₂-(Zn_1/3Nb_2/3)O₂ were determined by X-ray diffraction (XRD), where wolframite, tri-αPbO₂, and columbite phases were identified. Next attempts were carried out (with the addition of PbO) for the system Pb(Zn_1/2W_1/2)O₃-Pb(Zn_1/3Ta_2/3)O₃-Pb(Zn_1/3Nb_2/3)O₃, where the perovskite phase did not develop in the entire compositions investigated. Instead, only the Pb₂WO₅ and pyrochlore phases (along with ZnO) resulted.     

Effects of growth conditions on the domain structure and dielectric properties of (1 − x)Pb(Sc1/2Nb1/2)O3–xPbTiO3 single crystals

The studies of the (1 − x)Pb(Sc_1/2Nb_1/2)O₃–xPbTiO₃ (PSN–PT) single crystals reveal that the chemical and physical properties of the materials are affected by the growth conditions. By the measurements of the dielectric constant as a function of temperature upon cooling, it is found that crystals grown from the same charged stoichiometric composition (x = 0.425), but under different flux environments (i.e. the composition of flux and the flux to PSN–PT ratios are varied), show anomalies (i.e. phase transitions) at different temperatures. This phenomenon is attributed to the complex local chemical structure of the PSN–PT solid solution single crystals with B-site random occupancy of three different cations (Sc³⁺, Nb⁵⁺ and Ti⁴⁺). The dielectric and domain structure of the PSN–PT crystals with composition near the morphotropic phase boundary (MPB) are investigated, showing much more complex situations compared with Pb(Sc_1/2Nb_1/2)O₃.     

Influence of yttrium content on the CeLu1 and CeLu2 luminescence characteristics in (Lu1−xYx)2SiO5:Ce single crystals

This work deals with luminescence and scintillation characteristics of highly efficient cerium-doped scintillators, lutetium–yttrium orthosilicate (Lu_2(1−x)Y_2xSiO₅:Ce³⁺, x = 0−1). The radioluminescence, photoluminescence excitation (PLE) and emission (PL) spectra of the Ce_Lu1, Ce_Lu2 centers in LSO, LYSO and YSO are measured and discussed between 80 and 400 K with respect to the Ce_Lu1 and Ce_Lu2 features assignment and separation. The influence of yttrium concentration in Lu_2(1−x)Y_2xSiO₅:Ce³⁺ on Ce_Lu1, Ce_Lu2 luminescence characteristics is demonstrated. Temperature dependence shows that with increasing yttrium content the onset of the Ce_Lu1 and Ce_Lu2 decay time decrease and Ce_Lu1, Ce_Lu2 delayed recombination integrals increase shift to higher temperatures. The 5d₁ thermally induced excited-state ionization of both Ce_Lu1 and Ce_Lu2 centers is confirmed and studied by purely optical methods.     

Microscopic phase-field study on atomic site occupation probability in L12-Ni3(Al1 − xFex) structure

The effect of Fe content on atomic site occupation in L1₂-Ni₃(Al_1 − xFe_x) structure at 1073 K was studied by using microscopic phase-field model. The results show that with increasing Fe, Fe atoms prefer to occupy the Al sites (β sites), and the site occupation probability (SOP) gradually increases, while the SOP of Al atoms on β sites decreases accordingly. Meanwhile, a small amount of Ni atoms also occupy β sites which is the so-called anti-site behavior; reversely, such behavior happens as a trace amount of Al and Fe atoms occupies α sites. Unlike Ni atoms, the anti-site behavior of Al and Fe atoms is strengthened with the increase of Fe content. Further, the precipitation mechanism, the size and the ordering degree of L1₂ structure also present obvious changes with the addition of Fe.     

Improvement on the Oxidation Resistance of a Ti3Al Based Alloy by Cr1-xAlxN （0≤x≤0.47） Coatings

Cr1-xAlxN coatings have been deposited on a Ti3Al based alloy by reactive sputtering method. The results of the isothermal oxidation test at 800-900℃ showed that Cr1-xAlxN coatings could remarkably reduce the oxidation rate of the alloy owing to the formation of Al2O3＋Cr2O3 mixture oxide scale on the surface of the coatings. No spallation of the coatings or oxide scales took place during the cyclic oxidation at 800℃. Ti was observed to diffuse into the coatings, the diffusion distance of which was very short, and the diffusion ability of it was proportional to the AI content in the coatings. Compared to Ti, Nb can diffuse much more easily through the whole coatings and oxide scales.