中国移动、铁通网络互补应用的探讨

随着全业务运营竞争的加剧,固定与移动网络融合的步伐越来越近。本文通过对中国移动和铁通网络优劣势的分析,提出了中国移动与铁通网络互补的原则、策略和应用思路,希望对固定与移动通信的融合能起到一定的借鉴作用。     

新时期关口局建设对交换设备的新要求

随着我国电信体制的重大改革,中国电信和中国移动等企业继续保持高速发展;中国联通．、中国铁通、中国网通和中国吉通等新组建的电信运营企业的实力也迅速提升。为了适应网络发展的需要,各运营商纷纷大规模启动关口局的建设,以满足网间互连互通、网间计费清算和实现网间业务互通的需求。 关口局是促进各电信运营商正常快速发展的基础,是保障电信运营商利益的重要手段。关口局的建设,对于互连互通工作的进一步规范化、制度化及网络互通监管提供了技术上和设备上的保证和可能。关口局是随着电信体制改革出现的新事物,如何适应新时期网…     

新时期关口局建设对交换设备的新要求

随着我国电信体制的重大改革,中国电信、中国移动等企业继续保持高速发展,中国联通、中国铁通、中国网通、中国吉通等新组建的电信运营企业的实力也得到了迅速提升。为了适应网络发展的需要,各运营商纷纷大规模启动关口局的建设,以满足网间互连互通、网间计费清算和实现网间业务互通的需求。 关口局是促进各电信运营商正常快速发展的基础,是保障电信运营商利益的重要手段。关口局的建设,对于互连互通工作的进一步规范化、制度化及网络互通监管提供了技术上和设备上的保证和可能。关口局是随着电信体制改革出现的新事物,如何适应新时…     

中国移动和中国联通GSM网间互发短消息的解决方案

在分析中国移动和中国联通的网络现状及信令流程的基础上,提出了通过关口局互联和通过HSTP互联的方案来解决中国移动和中国联通GSM网间互发短消息的问题。     

协同初见成效

“河南移动的充值卡等已经在河南铁通的营业厅开售。”12月9日，河南铁通一位工作人员在接受记者采访时将中国铁通和中国移动目前的合作概括为四个方面，首先是人员方面，“还没有展开，仅仅是移动公司的人来到铁通进行相关的培训”；其次是渠道方面，移动公司的充值卡等开始在铁通营业厅出售；再次是网络方面，“严格遵守共享共建原则，铁通已建设的网络设备，移动就不能再建”；最后是全业务，“明年的一个工作重点就是业务融合”。     

宝鸡联通关口局融合工作探讨

随着中国电信行业新一轮重组的完成,由原来单一业务运营商变成全业务运营商.重组后各运营商普遍存在网络结构重叠、复杂的现状.建立统一的关口局,实现网络互联是目前全业务运营商通信网络发展的必然趋势.本文以宝鸡联通为例,介绍了关口局融合建设方案以及融合中重点关注的问题.     

适应于VOLTE的关口局融合改造研究

随着4G通信技术的快速发展,通信运营商需推进现有关口局(GMSC)和MGCF/IM-MGW融合,加快融合关口局建设,优化网络结构,提升用户体验.目前,VOLTE已逐步大规模推广应用,由于VOLTE采用默认开通方式,VOLTE实际开通的用户数增长趋势远超原定的业务规划,目前关口局融合改造在国内缺乏成熟的案例,因此,迫切需要进行关口局融合改造技术的研究与实践.本文在工作实践的基础上,研究关口局融合的关键技术和实现方式,探讨适应VOLTE快速发展的关口局融合改造方案,减少关口局改造对业务中断的风险,提升业务上线的效率,保障运营商4G业务的快速发展,给用户带来更好的业务体验.     

黑龙江联通关口局网络保护方案

讨论如何充分利用固定网和移动网网络资源,优化资源配置,在出现故障时,利用固定网及移动网网络节点间的相互保护,减少网间障碍的发生,缩短处理障碍时间.并根据黑龙江联通网络融合后关口局的网络状况,从网络安全的角度,提出单关口局保护、移动网与固定网关口局间的相互保护、网间长途落地业务的保护、业务承载的保护等多种方案,确保网间通...     

国产设备在移动关口局建设中挑大梁

本刊讯日前,贵州省移动通信公司、浙江省移动公司分别与深圳市华为技术有限公司签订ＧＭＳＣ合同,由华为承建贵州省安顺、都匀、毕节、兴义四地市和浙江省宁波、温州两地市ＧＭＳＣ工程。至此,在８个新建移动关口局的省区中,华为连续承建了福建、新疆、河北、浙江、贵州等５省区的工程。国产设备已成为移动关口局建设热潮中的主导力量。 随着电信市场改革的深入,与其他运营商网络之间的互联互通成为中国移动网络面临的重要课题。因此,迫切需要建立综合移动关口局,连接ＰＳＴＮ、中国联通网络、ＩＳＰ、专业局等需要明确结算的网络,实现统一的网间接口,进一步优化网络结构。为此,各省区移动公司纷纷启动独立关口局（ＧＭＳＣ）建设,以满足互联互通、网间结算和网间业务共享的需求。国产设备在移动关口局建设中挑大梁     

号码携带业务对IMS网络互通影响分析

重点讨论了IMS网络在网间互通时的原则,由此引出关口局融合的概念和阶段性建议。特别就号码携带业务对IMS网络互通的影响,结合关口局融合改造的各个阶段提出了具体解决方案。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.