A 0.03 mm2 delta-sigma modulator with cascaded-inverter amplifier

A single stage inverter is introduced as a replacement for the conventional OTA to implement an inverter-based delta-sigma modulator. It achieves a high power and area efficiency. However, the low DC-gain and gain-bandwidth (GBW) have limited the application. This paper proposes a cascaded-inverter to increase the DC-gain and GBW, while maintaining the advantages of power and area efficiency. By cascading three inverters, the DC-gain is increased from 44 dB to 82 dB, and the GBW is increased from 100 MHz to 697 MHz. A third-order delta-sigma modulator using the proposed cascaded-inverter has been fabricated in a 0.11-μm CMOS process. When operating from a 1.2-V supply and clocked at 80 MHz, the prototype modulator achieves 59.4-dB peak SNDR over 500-kHz signal bandwidth while consuming 249 μW. Measurement results demonstrate that the application of the inverter-based amplifier, which is becoming popular due to its high power efficiency, can be extended to significantly higher speed circuits     

A 1-V 140-/spl mu/W 88-dB audio sigma-delta modulator in 90-nm CMOS

A single-loop third-order switched-capacitor /spl Sigma/-/spl Delta/ modulator in 90-nm standard digital CMOS technology is presented. The design is intended to minimize the power consumption in a low-voltage environment. A load-compensated OTA with rail-to-rail output swing and gain enhancement is chosen in this design, which provides higher power efficiency than the two-stage OTA. To lower the power consumption further, class-AB operation is also adapted in the OTA design. Due to the relatively low threshold voltage of the advanced technology, no clock bootstrapping circuits are needed to drive the switches and the power consumption of the digital circuits is reduced. All the capacitors are implemented using multilayer metal-wall structure, which can provide high-density capacitance. The modulator achieves 88-dB dynamic range in 20-kHz signal bandwidth with an oversampling ratio of 100. The power consumption is 140 /spl mu/W under 1-V supply voltage and the chip core size is 0.18 mm/sup 2/.     

A low-power up-conversion CMOS mixer for 22-29-GHz ultra-wideband applications

A double-balanced, low-power, and low-voltage dual-gate up-conversion mixer working at K-band is designed and fabricated in the UMC 130-nm logic CMOS process. The mixer achieves a 3-dB conversion-gain bandwidth of 1.8 GHz at the input IF port and a 3-dB conversion-gain bandwidth of 10 GHz at the output RF port. The mixer achieves an output referred 1-dB compression point as high as -5.8 dBm and an output referred third-order intercept point as high as 5.8 dBm, while consuming 8.0 mW from a 1.2-V supply. This study demonstrates that the implementation of low-power mixers operating in the 22-29-GHz band for ultra-wideband automotive radar applications is possible in low-cost and low-voltage logic CMOS technology.     

A 0.6-V 82-dB delta-sigma audio ADC using switched-RC integrators

A 0.6-V 2-2 cascaded audio delta-sigma ADC is described. It uses a resistor-based sampling technique which achieves high linearity and low-voltage operation without subjecting the devices to large terminal voltages. A low-distortion feed-forward topology combined with nonlinear local feedback results in enhanced linearity by reducing the sensitivity to opamp distortion, and allows increased input amplitude, resulting in higher SNDR. The modulator achieves 82-dB dynamic range and 81-dB peak SNDR in the A-weighted audio signal bandwidth with an OSR of 64. The total power consumption of the modulator is 1 mW from a 0.6-V supply. The prototype occupies 2.9 mm/sup 2/ using a 0.35-/spl mu/m CMOS technology.     

A 0.5-V 74-dB SNDR 25-kHz Continuous-Time Delta-Sigma Modulator With a Return-to-Open DAC

A 0.5-V third-order one-bit fully-differential continuous-time DeltaSigma modulator is presented. The presented modulator architecture uses true low-voltage design techniques, and does not require internal voltage boosting or low-threshold devices. A return-to-open architecture that enables the ultra-low-voltage realization of return-to-zero signaling for the feedback DAC is proposed. The ultra-low-voltage operation is further enabled by a body-input gate-clocked comparator, and body-input operational transconductance amplifiers for the active-RC loop filter. Fabricated on a 0.18-mum CMOS process, the modulator achieves a peak SNDR of 74 dB in a 25 kHz bandwidth, and occupies an area of 0.6 mm²; the modulator core consumes 300 muW     

A THD-reduction high-efficiency audio amplifier using inverter-based OTAs with filter-output feedback

This paper presents an integrated low-voltage THD-reduction high-efficiency class-D audio amplifier using inverter-based operational transconductance amplifiers (OTAs). We propose a negative feedback loop which can compensate for external perturbations and improving output precision. The compensator increases the audio-frequency loop gain, and leads to a better rejection of audio-frequency disturbances. The use of inverter-based OTA and comparator provides low-voltage operation and low-power dissipation. The audio amplifier operates with a 1.5 V supply voltage with maximum power efficiency of 90%. The proposed class-D amplifier was implemented using a TSMC 0.18-μm 1P6M CMOS process, and the active chip area is 1.87 mm².     

A 0.8-V 0.25-mW Current-Mirror OTA With 160-MHz GBW in 0.18-μm CMOS

A low-voltage low-power CMOS operational transconductance amplifier (OTA) with near rail-to-rail output swing is presented in this brief. The proposed circuit is based on the current-mirror OTA topology. In addition, several circuit techniques are adopted to enhance the voltage gain. Simulated from a 0.8-V supply voltage, the proposed OTA achieves a 62-dB dc gain and a gain-bandwidth product of 160 MHz while driving a 2-pF load. The OTA is designed in a 0.18-mum CMOS process. The power consumption is 0.25 mW including the common-mode feedback circuit     

A multibit delta-sigma audio DAC with 120-dB dynamic range

A 24-bit 192-kHz sample-rate digital-to-analog converter (DAC) achieves 120-dB A-weighted dynamic range in the 20-kHz band, and consumes 310 mW with a 5-V power supply. A third-order five-bit ΔΣ architecture optimized for high-end consumer audio has been developed and used. A switched-capacitor (SC) DAC combined with infinite-impulse response (IIR) and finite-impulse response (FIR) filters is employed to increase immunity to clock jitter, and reduce analog power. Partial-range dynamic element matching (DEM) enhances mismatch shaping with reduced circuit overhead. The 7.8-mm² chip fabricated in 0.5-μ m CMOS integrates a stereo DAC and all functions required for DVD-audio playback     

DTMOS Technique for Low-Voltage Analog Circuits

In this paper, the application of dynamic threshold MOS (DTMOS) technique for low-voltage analog circuits is explored. The body terminal of PMOS transistors in bulk CMOS technology can be used as the forth terminal to enhance the performance of low-voltage analog circuits. To show the effectiveness of this technique, we have designed a continuous time common mode feedback (CMFB) circuit for a sub 1-V opamp and a new sub 1-V, 1-bit quantizer. A 0.8-V opamp with embedded CMFB and a 0.8-V, 1-bit quantizer for low-voltage DeltaSigma modulators are implemented in 0.18-mum CMOS technology. The simulation results as well as the measurement data of these blocks are presented in this paper     

A third-order /spl Sigma//spl Delta/ modulator in 0.18-/spl mu/m CMOS with calibrated mixed-mode integrators

This paper describes a third-order sigma-delta (/spl Sigma//spl Delta/) modulator that is designed and implemented in 0.18-/spl mu/m CMOS process. In order to increase the dynamic range, this modulator takes advantage of mixed-mode integrators that consist of analog and digital integrators. A calibration technique is applied to the digital integrator to mitigate mismatch between analog and digital paths. It is shown that the presented modulator architecture can achieve a 12-dB better dynamic range than conventional structures with the same oversampling ratio (OSR). The experimental prototype chip achieves a 76-dB dynamic range for a 200-kHz signal bandwidth and a 55-dB dynamic range for a 5-MHz signal bandwidth. It dissipates 4 mW from 1.8-V supply voltages and occupies 0.7-mm/sup 2/ silicon area.     

A Power Optimized Continuous-Time ∆Σ ADC for Audio Applications

We present design considerations for low-power continuous-time modulators. Circuit design details and measurement results for a 15 bit audio modulator are given. The converter, designed in a 0.18 mum CMOS technology, achieves a dynamic range of 93.5 dB in a 24 kHz bandwidth and dissipates 90 muW from a 1.8 V supply. It features a third-order active-RC loop filter, a very low-power 4-bit flash quantizer, and an efficient excess-delay compensation scheme to reduce power dissipation.     

Delta–Sigma A/D Conversion Via Time-Mode Signal Processing

In this paper, a signal processing methodology is proposed that performs delta-sigma (DeltaSigma) analog-to-digital (A/D) conversion on voltage signals while implementing all the circuits in a digital CMOS logic style. This methodology, called time-mode (TM) signal processing, uses time-difference variables as an intermediate signal between the input voltage and the digital output. The resulting low-cost silicon devices offer very compact, low-power, high-speed, and robust A/D converter (ADC) alternatives. A first-order DeltaSigma ADC is implemented using this methodology. Two ICs were fabricated in a 0.18- mum CMOS technology to demonstrate the feasibility of the TM DeltaSigma ADC approach. The first IC implements a single-ended input design while a differential design was fabricated in the second IC. Experimental results reveal that these devices can achieve 7-9-bit resolutions within 125-400-kHz bandwidths, while occupying areas smaller than 50 mum ×50 mum and consuming less than 800 muW.     

A 2.7-mW 2-MHz Continuous-Time Σ∆ Modulator With a Hybrid Active–Passive Loop Filter

In this paper, passive continuous-time (CT) Sigma Delta modulators are briefly reviewed and compared with conventional active CT Sigma Delta modulators. A fifth-order CT Sigma Delta modulator with a hybrid active-passive loop filter is realized with only three active integrators. The hybrid CT Sigma Delta modulator is robust to the excess loop delay, clock jitter, and RC product variations. The prototype chip is designed in a 0.25- mum CMOS technology targeting for GPS or WCDMA applications. The experimental results show that the prototype Sigma Delta modulator achieves a 68-dB dynamic range and a - 75 dB IM3 over a 2-MHz bandwidth with a 150-MHz clock, consuming 1.8 mA from a 1.5-V supply.     

A low power dissipation high-speed CMOS image sensor with column-parallel sigma–delta ADCs

A 60frames/s CMOS image sensor with column-parallel inverter-based sigma–delta (ΣΔ) ADCs is proposed in this paper. In order to improve the robustness of the inverter, instead of constant power supply, two buffers are designed to provide power supply for inverters. Instead of using of an operational amplifier, an inverter-based switch-capacitor (SC) circuit is adopted to low-voltage low-power ΣΔ modulator. Detailed analysis and design optimization are provided. Due to the use of the inverter-based ΣΔ ADCs, the conversion speed is improved while reducing the area and power consumption. The proposed CMOS image sensor has been fabricated with 0.18 μm CMOS process. The measurement results show that the random noise (RN) is 7e_rms⁻, the pixel conversion gain is 100 μV/e⁻. Since the measured full well capacity of the pixel is 25000e⁻, the CMOS image sensor achieves a 71 dB dynamic range (DR). The total power consumption at 60frame/s is 58.2 mW.     

A 1.8-GHz Spur-Cancelled Fractional-N Frequency Synthesizer With LMS-Based DAC Gain Calibration

A 1.8-GHz wideband DeltaSigma fractional-N frequency synthesizer achieves the phase noise performance of an integer-N synthesizer using a spur-cancellation digital-to-analog converter (DAC). The DAC gain is adaptively calibrated with a least-mean-square (LMS) sign-sign correlation algorithm for better than 1% DAC and charge pump (CP) gain matching. The proposed synthesizer phase-locked loop (PLL) is demonstrated with a wide 400-kHz loop bandwidth while using a low 14.3-MHz reference clock, and offers a better phase noise and bandwidth tradeoff. Using an 8-bit gain-calibrated DAC, DeltaSigma-shaped divider ratio noise is suppressed by as much as 30 dB. The second-order DeltaSigma fractional-N PLL exhibits in-band and integrated phase noises of -98 dBc/Hz and 0.8deg. The chip, fabricated in 0.18-mum CMOS, occupies 2 mm², and consumes 29 mW at 1.8-V supply. The spur cancellation and correlation function consumes 30% additional power     

A multibit sigma-delta ADC for multimode receivers

A 2.7-V sigma-delta modulator with a 6-bit quantizer is fabricated in a 0.18-/spl mu/m CMOS process. The modulator makes use of noise-shaped dynamic element matching (DEM) and quantizer offset chopping to attain high linearity over a wide bandwidth. The DEM algorithm is implemented in such a way as to minimize additional delay within the feedback loop of the modulator, thereby enabling the use of the highest resolution quantizer yet reported in a multibit sigma-delta analog-to-digital converter of this speed. The part achieves 95-dB peak spurious-free dynamic range and 77-dB signal-to-noise ratio over a 625-kHz bandwidth, and consumes 30 mW at a sampling frequency of 23 MHz. The part achieves 70-dB signal-to-noise ratio over a 1.92-MHz bandwidth and dissipates 50 mW when clocked at 46 MHz.     

A 0.9 V 92 dB Double-Sampled Switched-RC Delta-Sigma Audio ADC

A 0.9 V third-order double-sampled delta-sigma audio ADC is presented. A new method using a combination of a switched-RC technique and a floating switched-capacitor double-sampling configuration enabled low-voltage operation without clock boosting or bootstrapping. A three-level quantizer with simple dynamic element matching was used to improve linearity. The prototype IC implemented in a 0.13 CMOS process achieves 92 dB DR, 91 dB SNR and 89 dB SNDR in a 24 kHz audio signal bandwidth, while consuming 1.5 mW from a 0.9 V supply. The prototype operates from 0.65 V to 1.5 V supply with minimal performance degradation.     

A 20-mW 640-MHz CMOS Continuous-Time Σ∆ ADC With 20-MHz Signal Bandwidth, 80-dB Dynamic Range and 12-bit ENOB

A wide bandwidth continuous-time sigma-delta ADC, operating between 20 and 40 MS/s output data rate, is implemented in 130-nm CMOS. The circuit is targeted for applications that demand high bandwidth, high resolution, and low power, such as wireless and wireline communications, medical imaging, video, and instrumentation. The third-order continuous-time SigmaDelta modulator comprises a third-order RC operational-amplifier-based loop filter and 4-bit internal quantizer operating at 640 MHz. A 400-fs rms jitter LC PLL with 450-kHz bandwidth is integrated, generating the low-jitter clock for the jitter-sensitive continuous-time SigmaDelta ADC from a single-ended input clock between 13.5 and 40 MHz. To reduce clock jitter sensitivity, nonreturn-to-zero (NRZ) DAC pulse shaping is used. The excess loop delay is set to half the sampling period of the quantizer and the degradation of modulator stability due to excess loop delay is avoided with a new architecture. The SigmaDelta ADC achieves 76-dB SNR, -78-dB THD, and a 74-dB SNDR or 12 ENOB over a 20-MHz signal band at an OSR of 16. The power consumption of the CT SigmaDelta modulator itself is 20 mW and in total the ADC dissipates 58 mW from the 1.2-V supply     

A 1-V 60-μW 85-dB dynamic range continuous-time third-order sigma-delta modulator

A 1-V third order one-bit continuous-time (CT) ΣΔ modulator is presented. Designed in the SMIC mixed-signal 0.13-μm CMOS process, the modulator utilizes active RC integrators to implement the loop filter. An efficient circuit design methodology for the CT ΣΔ modulator is proposed and verified. Low power dissipation is achieved through the use of two-stage class A/AB amplifiers. The presented modulator achieves 81.4-dB SNDR and 85-dBdynamic range in a 20-kHz bandwidth with an over sampling ratio of 128. The total power consumption of the modulator is only 60μW from a 1-V power supply and the prototype occupies an active area of 0.12 mm~2.     

A Binary-Weighted Switching and Reconfiguration-Based Programmable Gain Amplifier

In previous works, the authors reported on binary-weighted switching and reconfiguration techniques to design programmable gain amplifiers (PGAs) with a wide decibel (dB)-linear range, a small gain error, a wide 3-dB bandwidth, and high linearity. In this brief, two techniques are analyzed in more detail. Adopting the two techniques, a new low-voltage PGA version is proposed that offers a precise and process/temperature-insensitive gain and achieves a double dB-linear range with a small gain error while maintaining the same chip size, as compared with those of previous designs. Implemented in 0.18-mum CMOS, from the measurements, the proposed PGA shows a dB-linear gain range of 42 dB (-21 to 21 dB) with a gain error of less than plusmn 0.54 dB, a maximum input-referred third-order intercept point (IIP3) of 14 dBm, and a 3-dB bandwidth of 60 MHz at the maximum gain while consuming only 2.1 mA from a 1.5-V supply.