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1.
Fe3O4 nanoparticles were synthesized by a facile one-pot hydrothermal process just using ferric citrate and water without any additional reagent and post-treatment. The temperature of hydrothermal reaction had important influence on the crystallinity and magnetic property of Fe3O4 samples. Fe3O4 sample synthesized at 200 °C for 24 h showed a narrow size distribution (4 to 8 nm in diameter), and exhibited apparent superparamagnetism with saturated magnetization of 55.1 emu/g. The narrow size distribution and superparamagnetism were the interesting features of these Fe3O4 nanoparticles.  相似文献   

2.
A method to prepare multi-walled carbon nanotube/polyaniline/Fe3O4 nanocomposites was developed. Acid-treated multi-walled carbon nanotubes (MWCNTs) were first encapsulated with polyaniline (PANI) by an in-situ micro-emulsion polymerization and then reacted with Fe3O4 modified with aniline dimer (ADM-Fe3O4). Fourier transform infrared spectrometry demonstrated that there existed chemical linkages between the MWCNTs and the PANI as well as between the MWCNTs and the ADM-Fe3O4 nanoparticles. The morphology of the nanocomposites was examined using transmission electron microscopy. The bulk structure of the nanocomposites was investigated with X-ray diffraction. The resulting products could be separated from the deionized water under an external magnetic field within about several seconds.  相似文献   

3.
采用超声波辅助部分还原共沉淀法制备超顺磁性Fe3O4纳米粒子。采用红外光谱仪(FT-IR)、X射线衍射(XRD)、振动样品磁强计(VSM)和粒径测试等手段对磁性纳米粒子进行表征,研究了不同表面改性剂(油酸、十二烷基苯磺酸钠、葡聚糖)对制备的磁性粒子的晶粒尺寸、磁性能及颗粒分散性的影响。结果表明,采用表面活性剂包覆改性后Fe3O4纳米粒子的XRD峰明显宽化,晶粒直径由未改性的18.5nm减小至6.0~9.0nm,饱和磁化强度因晶粒尺寸的减小而降低,且改性后颗粒在溶液中的分散性提高。  相似文献   

4.
Piezoelectric properties of Al2O3-doped Pb(Mn1/3Nb2/3)O3-PbZrO3-PbTiO3 ceramics were investigated. The constituent phases, microstructure, electromechanical coupling factor, dielectric constant, piezoelectric charge and voltage constants were analyzed. Diffraction peaks for (002) and (200) planes were identified by X-ray diffractometer for all the specimens doped with Al2O3. The highest sintered density of 7.8 g/cm3 was obtained for 0.2 wt% Al2O3-doped specimen. Grain size increased by doping Al2O3 up to 0.3 wt%, and it decreased by more doping. Electromechanical coupling factor, dielectric constant, piezoelectric charge and voltage constants increased by doping Al2O3 up to 0.2 wt%, and it decreased by more doping. This might result from the formation of oxygen vacancies due to defects in O2 − ion sites and the substitution of Al3+ ions.  相似文献   

5.
The effect of B2O3 and CuO on the sintering temperature and microwave dielectric properties of BaTi4O9 ceramics was investigated. The BaTi4O9 ceramics were able to be sintered at 975C when B2O3 was added. This decrease in the sintering temperature of the BaTi4O9 ceramics upon the addition of B2O3 is attributed to the formation of BaB2O4 second phase whose melting temperature is around 900C. The B2O3 added BaTi4O9 ceramics alone were not sintered below 975C, but were sintered at 875C when CuO was added. The formation of BaCu(B2O5) second phase could be responsible for the decrease in the sintering temperature of the CuO and B2O3 added BaTi4O9 ceramics. The BaTi4O9 ceramics containing 2.0 mol% B2O3 and 5.0 mol% CuO sintered at 900C for 2 h have good microwave dielectric properties of εr = 36.3, Q× f = 30,500 GHz and τf = 28.1 ppm/C  相似文献   

6.
Li2MgTiO4 (LMT) ceramics which are synthesized using a conventional solid-state reaction route. The LMT ceramic sintered at 1250°C for 4 h had good microwave dielectric properties. However, this sintering temperature is too high to meet the requirement of low-temperature co-fired ceramics (LTCC). In this study, the effects of B2O3 additives and sintering temperature on the microstructure and microwave dielectric properties of LMT ceramics were investigated. The B2O3 additive forms a liquid phase during sintering, which decreases the sintering temperature from 1250°C to 925°C. The LMT ceramic with 8 wt% B2O3 sintered at 925°C for 4 h was found to exhibit optimum microwave dielectric properties: dielectric constant 15.16, quality factor 64,164 GHz, and temperature coefficient of resonant frequency -28.07 ppm/°C. Moreover, co-firing of the LMT ceramic with 8 wt% B2O3 and 20 wt% Ag powder demonstrated good chemical compatibility. Therefore, the LMT ceramics with 8 wt% B2O3 sintered at 925°C for 4 h is suitable for LTCC applications.  相似文献   

7.
Pure and Nd-modified Bi4Ti3O12 ceramics were prepared using the conventional solid state reaction method and their dielectric properties and mechanical properties are investigated. It shows that the activation energy of oxygen vacancies is enhanced whereas the concentration of oxygen vacancies is reduced when Bi3+ ions are partially substituted by Nd3+ ions. The Cole-Cole fitting to the dielectric loss reveals a strong correlation among oxygen vacancies. The strong correlation reduces the activation energy of oxygen vacancies efficiently. Therefore, we conclude that the diluted oxygen vacancies concentration is the origin of the excellent fatigue resistance of Nd-modified Bi4Ti3O12 materials.  相似文献   

8.
PbZr0.58Ti0.42O3 (PZT) ferroelectric thin films with Bi3.25La0.75Ti3O12 (BLT) buffer layer of various thickness were fabricated on Pt/TiO2/SiO2/p-Si(100) substrates by rf-magnetron sputtering method. The pure PZT film showed (111) preferential orientation in the XRD patterns, and the PZT/BLT films showed (110) preferential orientation with increasing thickness of the BLT layer. There were no obvious diffraction peaks for the BLT buffer layer, for its thin thickness in PZT/BLT multilayered films. There were the maximum number of largest-size grains in PZT/BLT(30 nm) film among all the samples from the surface images of FESEM. The growth direction and grain size had significant effects on ferroelectric properties of the multilayered films. The fatigue characteristics suggested that 30-nm-thick BLT was just an effective buffer layer enough to alleviate the accumulation of oxygen vacancies near the PZT/BLT interface. The comparison of these results suggests that the buffer layer with an appropriate thickness can improve the ferroelectric properties of multilayered films greatly.  相似文献   

9.
The paper reports on synthesis, sintering and microstructure of Bi2/3Cu3Ti4O12, a lead-free, high-permittivity material with internal barrier layer capacitor behavior. Complex impedance and capacitance of the ceramic and thick films were studied as a function of frequency (10 Hz–2 MHz) and temperature (−170 to 400°C). Dc electrical conductivity of the samples was measured in the temperature range 20–400°C. Broad and high maxima of dielectric permittivity versus temperature plots were observed reaching 60,000 for ceramic and 5,000 for thick films. The maxima decrease and shift to higher temperatures with increasing frequency. Two arcs ascribed to grains and grain boundaries were found in the plots of imaginary part versus real part of impedance. Analysis of the impedance spectra indicates that Bi2/3Cu3Ti4O12 ceramic could be regarded as electrically heterogeneous system composed of semiconducting grains and less conducting grain boundaries. The developed thick film capacitors with dielectric layers based on Bi2/3Cu3Ti4O12 exhibit dense microstructure, good cooperation with Ag electrodes, high permittivity up to 5,000 and relatively low temperature coefficient of capacitance in the temperature range 100–300°C. Broad maxima in the dielectric permittivity versus temperature curves may be attributed to Maxwell–Wagner relaxation.  相似文献   

10.
In this study, radio frequency (RF) sputtering was used as the method and the layer-structured bismuth compound of SrBi4Ti4O15 + 4 wt% Bi2O3 ferroelectric ceramic was used as the target to deposit the SrBi4Ti4O15 (SBT) thin films. The addition of excess Bi2O3 content in the target ceramic was used to compensate the vaporization of Bi2O3 during the sintering and deposition processes. SBT ferroelectric thin films were deposited on Pt/Ti/SiO2/Si under optimal RF magnetron sputtering parameters with different substrate temperatures for 2 h. After that the SBT thin films were post-heated using rapid temperature annealing (RTA) method. The dielectric and electrical characteristics of the SBT thin films were measured using metal-ferroelectric-metal (MFM) structure. From the physical and electrical measurements of X-ray diffraction pattern, scanning electronic microscope (SEM), I-V curve, and C-V curve, we had found that the substrate temperature and RTA-treated temperature had large influences on the morphology, the crystalline structure, the leakage current density, and the dielectric constant of the SBT thin films.  相似文献   

11.
Bismuth titanate Bi4Ti3O12 thin films were prepared on LaAlO3(012) substrates by a spin coating-pyrolysis process using metal naphthenates as starting materials. The c-axis oriented Bi4Ti3O12 thin films, which contained no second phases as –2 scans, were obtained by heat-treatment in air at temperatures of 600°C and above. X-ray diffraction pole-figure analysis showed that the Bi4Ti3O12 thin film has an epitaxial relationship with the LaAlO3 substrate.  相似文献   

12.
CaCu3Ti4O12 nanopowders were fabricated by a facile effective sol-gel route using tetrabutyl titanate, calcium acetate and cupric nitrate as precursors. The intermediate xerogel was characterized by thermal analyzer and the products with different calcination temperature were then studied by IR spectrum. Further X-ray diffraction, transmission electronic microscopy, high-resolution transmission electron microscopy and energy dispersive X-ray spectrum were used to characterize the prepared CaCu3Ti4O12 nanopowders. Additionally, the obtained CaCu3Ti4O12 nanopowders were investigated as a gas sensitive material responding to ethanol atmosphere, and it showed high sensitivity for ethanol gas.  相似文献   

13.
Bi3.4La0.6Ti3O12 and CoFe2O4 were synthesized by chemical solution route, and Bi3.4La0.6Ti3O12/CoFe2O4 multilayers were deposited by spin coating on Pt substrate. X-ray diffraction of multilayer structures reveals composite-like polycrystalline film. Leakage current is less than 10?5 A at electric field < 90 KV/cm and follows the Ohmic behavior. Dielectric response shows relaxation and the loss (tan δ) is below 3% at 106 Hz. Room temperature ferrroelectric polarization (Pr) = 20.2 μC/cm2 and ferromagnetic memory (Mr) = 46.5 emu/cm3 has been obtained. Co-existence of FE and FM response can be attributed to stress and different permeability and permittivity involved in multilayer structures.  相似文献   

14.
The plate-like Bi4Ti3O12 particles were prepared by molten salt synthesis method. The influence of sintering temperature and cooling process on the microstructure of Bi4Ti3O12 powders was studied. Much larger particles were formed at higher temperatures. The particles could grow larger in slow cooling process. The formation mechanism of plate-like Bi4Ti3O12 particles in Na2SO4-K2SO4 system could be viewed as four processes: (1) solid reaction and nucleation, (2) plate-like structure formation, (3) diffusion and edge nucleation, (4) diffusion and epitaxial growth.  相似文献   

15.
Abstract

Bismuth-layer-structured ferroelectric thin films, SrBi2Ta2O9 and Bi4Ti3O12, have been prepared by laser ablation method on both Pt sheets and Si wafers at low temperatures of 400 ~ 500°C. These thin films have been characterized by XRD, XPS, AFM, C-V, D-E hysteresis and J-V measurement. SrBi2Ta2O9 thin films have a good (105) preferential orientation, and Bi4Ti3O12 thin films have (117) and c-axis orientation on these substrates. Ferroelectric film-SiO2-Si structures show good C-V hysteresis curve owing to Si surface potential controlled by the D-E hysteresis. D-E hysteresis is obtained in Bi4Ti3O12 thin film prepared on Pt sheet, and the remnant polarization and the coercive force are 7.5 μC/cm2 and 72 kV/cm, respectively.  相似文献   

16.
Bi(Mg2/3Nb1/3)O3 was partially substituted into a Pb(Mg1/3Nb2/3)O3⋅PbTiO3 perovskite system and resultant changes in the phase developments and dielectric properties were investigated. Two major structures of columbite and rutile, along with a small fraction of Mg4Nb2O9 (α-Al2O3 structure), were developed in the B-site precursor system, whereas only a perovskite was observable after the addition of PbO and Bi2O3. The replacement of Bi for Pb resulted in a great reduction in the maximum dielectric constants as well as a substantial decrease in the dielectric maximum temperatures.  相似文献   

17.
Thermoelectric minerals have been found at Loei Province, in the northeastern part of Thailand. Local mineral specimens were prepared in the powders and bulk solids form by crushing, calcination and annealing, pressure and sintering, cutting and polishing. Mineral samples were used to analyze the composition and phase, determine the thermoelectric property and efficiency, design and construct a thermoelectric generator. Chemical composition and phase identification of powder samples were analyzed by the x-ray fluorescence (XRF) and x-ray diffraction (XRD), respectively. XRF and XRD results indicated that the mineral samples comprised the SO3-CaO-SiO2-others, Fe2O3-SO3-SiO2-others, Fe2O3-SiO2-others and Fe2O3-SiO2-CuO-others. From the thermoelectric property and efficiency determinations, the p-SO3-CaO-SiO2-others, p-Fe2O3-SO3-SiO2-others, n-Fe2O3-SiO2-others and n-Fe2O3-SiO2-CuO-others bulks were found to exhibit the thermoelectric figure of merit in orders of 10?14, 10?11, 10?14 and 10?13 K?1, respectively. A fabricated thermoelectric generator made from ten pairs of p-Fe2O3-SO3-SiO2-others and n-Fe2O3-SiO2-CuO-others legs that can be provided the open circuit voltage and short circuit current up to 48.30 mV and 0.14 μA for a temperature difference of 39.80 K at room temperature, respectively. While the internal resistance decreased and reached a value of 665 kΩ.  相似文献   

18.
Ferroelectric Si-doped (Bi,Nd)4Ti3O12 thin films have been prepared on Pt/TiOx/SiO2/Si substrates through metal-organic compounds by the chemical solution deposition. The Bi3.25Nd0.75Ti2.9Si0.1O12 (BNTS) precursor films were found to crystallize into the Bi-layered perovskite Bi4Ti3O12 single-phase above 600C. The synthesized BNTS films revealed a random orientation having a strong 117 reflection. The BNTS thin films prepared between 600C and 700C showed well-saturated P-E hysteresis loops with P r of 13–14 μ C/cm2 and E c of 100–110 kV/cm at an applied voltage of 5 V. The surface roughness of the BNTS thin films was improved by Si doping compared with that of undoped Bi3.35Nd0.75Ti3O12 films.  相似文献   

19.
We propose the “Flux-mediated epitaxy” as a novel concept for the growth of single crystalline films of incongruent, volatile, and high-temperature-melting compounds. In flux-mediated eptitaxy, by supplying materials precursors from the gas phase through the liquid flux films pre-deposited on the substrate, a quasi-thermodynamic equilibrium condition is obtained at the interface between the growing films and the flux films. This process has been demonstrated in this paper by fabricating ferroelectric Bi4Ti3O12 films, which has volatile Bi oxide. The most important step in this process is the selection of the right flux material, which is hard to predict due to the lack of an appropriate phase diagram. In order to overcome this problem, we have selected the combinatorial approach. A series of ternary flux libraries composed of two self-fluxes (Bi2O3 and Bi4Ti3O12) and a third impurity flux were fabricated on SrTiO3 (001) substrates. After that, stoichiometric Bi4Ti3O12 films were grown on each of these flux libraries at a temperature presumed to melt the flux. High-throughput characterization with the concurrent X-ray diffraction method resulted in the identification of CuO containing Bi2O3 as the flux material for the growth of single crystalline Bi4Ti3O12 films. Stoichiometric Bi4Ti3O12 films fabricated by using a novel CuO containing Bi2O3 are qualified to be single crystalline judging from their large grain size and the electrical properties equivalent to bulk single crystal’s.  相似文献   

20.
A two-step molten salt synthesis process was utilized to fabricate Sr3Ti2O7 and SrTiO3. High aspect ratio SrTiO3 seed crystals were developed by optimizing processing conditions such as temperature, salt-to-oxide ratio, and flux type in a systematic fashion. Sr3Ti2O7 seeds were synthesized at temperatures ranging from 1050–1350°C, using salt-to-oxide ratios of 3:1, 1:1, and 1:3, and various salt types, including NaCl, KCl, and a 1:1 combination of NaCl and KCl. Sr3Ti2O7 seeds synthesized at 1250°C with a 1:1 salt-to-oxide ratio in 100% NaCl salt resulted in a majority of higher aspect ratio platelets and elongated platelets as opposed to lower aspect ratio cubic-like and tetragonal-like morphologies. The seeds were 10–40 μm in length with aspect ratios of highly elongated platelets as high as 25:1. A second MSS step was used to synthesize SrTiO3 seeds of the proper composition by TiO2 addition to the Sr3Ti2O7 seeds and heat treatment at 1100°C. These studies showed that highly anisotropic SrTiO3 seeds could be produced at 1250°C using a 1:1 salt-to-oxide ratio in 100% NaCl flux. XRD studies of the resulting SrTiO3 seeds revealed that the increase in aspect ratio for these particular seeds also resulted in the enhancement of (200) peaks, which are of major interest for texturing of PMN-PT.  相似文献   

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