Determination of upper and lower limits combining different experimental results

This paper discusses how to combine different experimental results in order to obtain upper or lower limits of physical quantities in the case of null experiments. Reanalyzing some published results, half-life limits for p → e⁺π⁰, p → K⁺, and for the ⁷⁶Ge ββ(0ν)-decay to the ground state of ⁷⁶Se were determined as 5.7 × 10³², 1.4 × 10³² and 2.5 × 10²⁴ yr, respectively, at 90% Confidence Level. The Bayesian approach is adopted using a step function as the prior-probability density function of the decay constant.     

Effect of stress gradients in the surface layer of beryllium on X-ray stress measurement

The effects of stress gradients in beryllium surface layers on traditional X-ray stress measurements are investigated by relationship analysis of d vs. (sin ψ)² plots with stress gradient in the surface layers of beryllium. The results show that over the range of (sin ψ)²≤0.5, there are significant effects of stress gradient on the measurement results. The stress measurement error resulting from the stress gradient is decreased using a vanadium target and high ψ range.     

Growth and spectroscopy of Dy doped in ZnWO4 crystal

Single-crystal ZnWO₄:Dy³⁺ was grown by Czochralski technique. The XRD, absorption spectra as well as fluorescence spectrum are investigated and the Judd–Ofelt intensity parameters Ω₂, Ω₄, Ω₆ are obtained to be 7.76 × 10⁻²⁰ cm², 0.57 × 10⁻²⁰ cm², 0.31 × 10⁻²⁰ cm², respectively. Calculated radiative transition rate, branching ratios and radiative lifetime for different transition levels of ZnWO₄:Dy³⁺ crystals are presented. Fluorescence lifetime of ⁴F_9/2 level is 158 μs and quantum efficiency is 66%.The most intense fluorescence line at 575 nm correlative with transition ⁴F_9/2 → ⁶H_13/2 is potentially for application of yellow lasers.     

Magnetic and electrical characterization of heavily boron-doped diamond

For a heavily boron-doped diamond (BDD) film, temperature variations of the electrical conductivity σ and magnetic susceptibility χ are reported. The room temperature σ 143 (Ω-cm)⁻¹ corresponds to a carrier concentration 10³ ppm, and its temperature variation yields an activation energy E_a 28 meV from 140 to 300 K and E_a0.88 meV from 40 to 80 K. It is argued that larger boron doping leads to lower magnitudes of E_a. The χ vs. T data (1.8–350 K) fits the Curie–Weiss law, with the concentration of paramagnetic species 120 ppm and a diamagnetic susceptibility −0.4×10⁻⁶ emu/g Oe. The results obtained from the measurements of σ and χ are discussed and compared.     

Ultraviolet emitting (Y1−xGdx)2O3−δ thin films deposited by radio frequency magnetron sputtering: Combinatorial modeling, synthesis, and rapid characterization

Gadolinium-doped, yttrium oxide thin films have been deposited on silicon (001) substrates by radio-frequency (RF) magnetron reactive sputtering that exhibit cathodoluminescence (CL) at ultraviolet frequencies. The maximum CL brightness occurred at λ314–315 nm characteristic of the ⁶P_3 / 2 → ⁸S (λ = 314 nm) transition observed in Gd-doped, yttrium oxide powders. The radiative recombination takes place at the rare earth activator Gd³⁺ site embedded in the Y₂O_3−δ host; the optical transition resides within the band gap of the Y₂O_3−δ host and the transition observed is characteristic of atomic gadolinium. A combinatorial approach to sputtering was used to deposit a film of variable composition from 1 to 23 at.% Gd in Y₂O_3−δ in order to rapidly discern the composition node of optimal CL brightness. A simulation was created for the purpose of predicting the film combinatorial composition for binary and ternary alloys prior to sputtering experiments in order to facilitate our combinatorial thin film synthesis technique. The model prediction varied from the real experimental composition profile by only 2.2 at.% Gd ± 1.6 at.% proving the predictor as a useful aide to complement combinatorial thin film experiments. A film of composition Y_1.56Gd_0.44O_3.25 (8.3 at.% Gd) yielded the maximum CL brightness. CL brightness increased continuously up to the 8.3 at.% Gd composition due to the increased number of activators present in the host. Beyond this composition the brightness drastically decreased. The oxygen composition in the combinatorial film was strongly dependent on the Gd composition; films were sub-stoichiometric δ > 0 below 6 at.% Gd and was over-stoichiometric δ < 0 beyond this composition.     

Comparison of optimised germanium gamma spectrometry and multicollector inductively coupled plasma mass spectrometry for the determination of Cs, Cs and Eu single ratios in highly burnt UO2

Non-destructive and destructive methods have been compared to validate their corresponding assessed accuracies in the measurement of ¹³⁴Cs/¹³⁷Cs and ¹⁵⁴Eu/¹³⁷Cs isotopic concentration ratios in four spent UO₂ fuel samples with very high (52 and 71 GWd/t) and ultra-high (91 and 126 GWd/t) burnup values, and about 10 (in the first three samples) and 4 years (in the latter sample) cooling time. The non-destructive technique tested was high-resolution gamma spectrometry using a high-purity germanium detector (HPGe) and a special tomographic station for the handling of highly radioactive 400 mm spent fuel segments that included a tungsten collimator, lead filter (to enhance the signal to Compton background ratio and reduce the dead time) and paraffin wax (to reduce neutron damage). The non-destructive determination of these isotopic concentration ratios has been particularly challenging for these segments because of the need to properly derive non-Gaussian gamma-peak areas and subtract the background from perturbing capture gammas produced by the intrinsic high-intensity neutron emissions from the spent fuel. Additionally, the activity distribution within each pin was determined tomographically to correct appropriately for self-attenuation and geometrical effects. The ratios obtained non-destructively showed a 1σ statistical error in the range 1.9–2.9%. The destructive technique used was a high-performance liquid chromatographic separation system, combined online to a multicollector inductively coupled plasma mass spectrometer (HPLC-MC-ICP-MS), for the analysis of dissolved fuel solutions. During the mass spectrometric analyses, special care was taken in the optimisation of the chromatographic separation for Eu and the interfering element Gd, as also in the mathematical correction of the ¹⁵⁴Gd background from the ¹⁵⁴Eu signal. The ratios obtained destructively are considerably more precise (1σ statistical error in the range 0.4–0.8% for most of the samples, but up to 2.8% for one sample). The HPGe gamma spectrometry can achieve a high degree of accuracy (agreement with HPLC-MC-ICP-MS within a few percent), only by virtue of the optimised setup, and the refined measurement strategy and data treatment employed.     

Dielectric properties, ac conductivity and thermal behaviour of flux grown cadmium titanate crystals

The dependence of loss tangent (tan δ) and both real and imaginary parts of the dielectric constant (′ and ″) on temperature in the range 298–923 K and frequency in the range 10³–10⁶ Hz for flux grown CdTiO₃ single crystals is reported. The ln σ_ac versus T plots suggest the conduction mechanism to be ionic hopping conduction. From ln σ_ac versus frequency curves, it can be seen that the slope decreases with the rise in temperature, suggesting that the ionic hopping conduction diminishes with the rise in temperature. The activation energy at various fixed frequencies is calculated from the slope of the graph between ln σ_ac versus 1/T (×10³ K⁻¹). Thermal behaviour of flux grown CdTiO₃ crystals using thermoanalytical techniques including TG, DTA and DTG is discussed. Thermal analysis suggests decomposition of CdTiO₃ in the temperature interval of 1386–1693 K leading to the formation of TiO₂ as the final product. Results obtained on application of TG based models viz. Horowitz–Metzger, Coats–Redfern and Piloyan–Novikova are reported. The results of kinetics of thermal decomposition suggest contracting cylinder model as the one that is relevant to the decomposition of CdTiO₃. The kinetic parameters viz. the order of reaction, activation energy, frequency factor, and entropy of activation using the above mentioned models are computed.     

Fatigue behaviors of the Cu47.5Zr47.5Al5 bulk-metallic glass (BMG) and Cu47.5Zr38Hf9.5Al5 BMG composite

Based on the Cu_47.5Zr_47.5Al₅ bulk-metallic glass (BMG), the Cu_47.5Zr₃₈Hf_9.5Al₅ BMG composite with a CuZr phase is fabricated successfully. The four-point-bend fatigue behaviors are investigated. The fatigue-endurance limit of the BMG composite is 378 MPa, based on the stress range (σ_r = σ_max − σ_min, where σ_max and σ_min are the applied maximum and minimum stresses, respectively). This value is much higher than that (224 MPa) of the BMG. The fatigue ratios (= the maximum stress range/yield strength corresponding to the fatigue cycles equal to 10⁷) of the BMG composite and the BMG are 0.23 and 0.12, respectively. The different fatigue-fracture surfaces of the BMG and BMG composite show somewhat different fracture mechanisms, which could be rationalized in terms of the effects of the second phase in the composite.     

区熔法制备金属硫化物Ag2S及其热电性能研究

金属硫化物Ag2S具有优异的物理化学性能,在催化、传感及光电子等领域具有广阔的应用空间.本工作利用一种区熔技术制备了尺寸为?18 mm×50 mm的Ag2S并对其潜在热电性能进行了研究.Ag2S在450 K以下具有标准的 α-Ag2S单斜P21/c结构,450 K以上发生相变成为立方 β-Ag2S相.Ag2S在300～...     

Frequency dependent electrical conductivity and dielectric relaxation behavior in amorphous (90V2O5–10Bi2O3) oxide semiconductors doped with SrTiO3

We report on the experimental results of frequency dependent a.c. conductivity and dielectric constant of SrTiO₃ doped 90V₂O₅–10Bi₂O₃ semiconducting oxide glasses for wide ranges of frequency (500–10⁴ Hz) and temperature (80–400 K). These glasses show very large dielectric constants (10²–10⁴) compared with that of the pure base glass (≈10²) without SrTiO₃ and exhibit Debye-type dielectric relaxation behavior. The increase in dielectric constant is considered to be due to the formation of microcrystals of SrTiO₃ and TiO₂ in the glass matrix. These glasses are n-type semiconductors as observed from the measurements of the thermoelectric power. Unlike many vanadate glasses, Long's overlapping large polaron tunnelling (OLPT) model is found to be most appropriate for fitting the experimental conductivity data, while for the undoped V₂O₅–Bi₂O₃ glasses, correlated barrier hopping conduction mechanism is valid. This is due to the change of glass network structure caused by doping base glass with SrTiO₃. The power law behavior (σ_ac=A(ω^s) with s<1) is, however, followed by both the doped and undoped glassy systems. The model parameters calculated are reasonable and consistent with the change of concentrations (x).     

Analysis of strain rate dependence of tensile elongation for a mechanical milling Al–1.1Mg–1.2Cu alloy tested at 748 K from a dislocation dynamics viewpoint

Tensile deformation was carried out for a mechanically milled and thermo-mechanically treated Al–1.1Mg–1.2Cu (at.%) alloy at 748 K and three nominal strain rates of 10⁻³, 10⁰, and 10² s⁻¹. Despite the prevailing belief that superplasticity occurs by grain boundary sliding which requires slow strain rates at high temperatures, the maximum elongation was observed at the intermediate strain rate of 10⁰ s⁻¹, neither at the lowest nor the highest strain rates. In order to explain this phenomenon, the true stress–true strain behaviors at these three nominal strain rates were analyzed from a viewpoint of dislocation dynamics by computer-simulation with four variables of the thermal stress component σ*, dislocation immobilization rate U, re-mobilization probability of unlocked, immobile dislocations Ω and dislocation density at yielding ρ₀. It can then be concluded that the large elongation (>400% in nominal strain) at the intermediate strain rate is produced by a combination of a very large Ω and a moderate U, resulting in a large strain rate sensitivity m value.     

Judd–Ofelt parametrization and radiative transitions analysis of Tm doped alkali chloroborophosphate glasses

Absorption spectra for Tm³⁺ doped alkali chloroborophosphate glasses are recorded in the UV–VIS and NIR regions. The assigned energy level data of Tm³⁺ (4f¹²) in these glasses are analysed in terms of a parametrized Hamiltonian model that includes 14 free-ion parameters. From the measured oscillator strengths of the absorption bands, the intensity parameters, Ω_λ, are calculated by using the Judd–Ofelt theory. Using these data, radiative transition probabilities, radiative lifetimes, branching ratios and integrated absorption cross-sections for ³P₀, ¹D₂ and ¹G₄ fluorescent levels are calculated. Certain laser transitions are predicted.     

Background analysis around Qββ for Ge double beta decay experiments, and statistics at low count rates

The background in the region of the Q-value for neutrinoless double beta decay of ⁷⁶Ge has been investigated by different methods: Simulation with GEANT 4 of the HEIDELBERG–MOSCOW experiment and analysis of other Ge double beta experiments. Statistical features of the analysis at very low count rates are discussed.     

Structural properties of swift heavy ion beam irradiated Fe/Si bilayers

The Fe/Si multilayers were prepared by electron beam evaporation in a cryo-pumped vacuum deposition system. Ag⁺ and Au⁺ ions of 100 MeV at two different fluencies such as 1 × 10¹² ions/cm² and 1 × 10¹³ ions/cm² at a pressure of 10^− 7 torr were used to irradiate the Fe/Si samples. The irradiated samples were analyzed by High-Resolution XRD and it reveals that the irradiated films are having polycrystalline nature and it confirms the formation of the β-FeSi₂. The structural parameters such as crystallite size (D), strain (ε) and dislocation density (δ) have been evaluated from the XRD spectrum. The role of the substrates and the influence of swift heavy ions on the formation of β-FeSi₂ have been discussed in this paper.     

Optical properties of Nd:NaLa (WO4)2 single crystal

Nd³⁺-doped NaLa(WO₄)₂ single crystal with a dimension of 20 mm × 40 mm and a good optical quality was grown by Czochralski method. The polarized absorption spectra and emission spectra were measured at room temperature. The absorption cross-section and emission cross-section were presented. The Judd–Ofelt theory, extended to anisotropic system, has been applied to evaluate the intensity parameters Ω_t (t = 2, 4, 6), radiative transition rates A, radiative lifetimes τ_R and fluorescent branching ratios β. The calculated radiative lifetime was compared with the experiment data for the ⁴F_3/2 emitting level. All spectral features are strongly affected by an inhomogeneous broadening connected with the ‘disordered crystal’ character of the title compound.     

Growth and properties of the CuInS2 thin films produced by glancing angle deposition

We use the glancing angle deposition technique (GLAD) to grow CuInS₂ thin films by a vacuum thermal method onto glass substrates. During deposition, the substrate temperature was maintained at 200 °C. Due to shadowing effect the oblique angle deposition technique can produce nanorods tilted toward the incident deposition flux. The evaporated atoms arrive at the growing interface at a fixed angle θ measured from the substrate normal. The substrate is rotated with rotational speed ω fixed at 0.033 rev s^− 1. We show that the use of this growth technique leads to an improvement in the optical properties of the films. Indeed high absorption coefficients (10⁵–3.10⁵ cm^− 1) in the visible range and near-IR spectral range are reached. In the case of the absence of the substrate rotation, scanning electron microscopy pictures show that the structure of the resulting film consists of nanocolumns that are progressively inclined towards the evaporation source as the incident angle was increased. If a rapid azimuthal rotation accompanies the substrate tilt, the resulting nanostructure is composed of an array of pillars normal to the substrate. The surface morphology show an improvement without presence of secondary phases for higher incident angles (θ > 60°).     

The optical and electrical properties of copper indium di-selenide thin films

Thin films of copper indium di-selenide (CIS) with a wide range of compositions near stoichiometry have been formed on glass substrates in vacuum by the stacked elemental layer (SEL) deposition technique. The compositional and optical properties of the films have been measured by proton-induced X-ray emission (PIXE) and spectrophotometry (photon wavelength range of 300–2500 nm), respectively. Electrical conductivity (σ), charge-carrier concentration (n), and Hall mobility (μ_H) were measured at temperatures ranging from 143 to 400 K. It was found that more indium-rich films have higher energy gaps than less indium-rich ones while more Cu-rich films have lower energy gaps than less Cu-rich films. The sub-bandgap absorption of photons is minimum in the samples having Cu/In ≈ 1 and it again decreases, as Cu/In ratio becomes less than 0.60. Indium-rich films show n-type conductivities while near-stoichiometric and copper-rich films have p-type conductivities. At 300 K σ, n and μ_H of the films vary from 2.15 × 10⁻³ to 1.60 × 10⁻¹ (Ω cm)⁻¹, 2.28 × 10¹⁵ to 5.74 × 10¹⁷ cm⁻³ and 1.74 to 5.88 cm² (V s)⁻¹, respectively, and are dependent on the composition of the films. All the films were found to be non-degenerate. The ionization energies for acceptors and donors vary between 12 and 24, and 3 and 8 meV, respectively, and they are correlated well with the Cu/In ratios. The crystallites of the films were found to be partially depleted in charge carriers.     

Charging kinetics in virgin and 1 MeV-electron irradiated yttria-stabilized zirconia in the 300–1000 K range

A study performed with a dedicated scanning electron microscope (SEM) on the surface electrical properties of (1 0 0)-oriented yttria-stabilized zirconia (YSZ) single crystals irradiated with 1 MeV electrons is presented. When compared with virgin YSZ, the 1 MeV-irradiated YSZ shows a decrease of the intrinsic total electron emission coefficient σ₀ and an increase of the time constant τ associated with the charging kinetics of the material at room temperature. These measurements performed with the SEM beam at 10 keV indicate that the defects induced by the 1 MeV-electron irradiation generate a positive electric field of the order of 0.5 × 10⁶ V/m at a depth of about 1 μm that prevents electrons to escape. When the SEM beam with a 1.1 keV energy is used, a smaller field (0.5 × 10³ V/m) is detected closer to the surface (20 nm). The fading of these fields during the thermal annealing in the 400–1000 K temperature range provides information on the nature of defects induced by the 1 MeV-electron irradiation.     

高居里温度BaTiO3-(Bi0.5Na0.5)TiO3无铅正温度系数电阻陶瓷的制备

用传统的固相反应烧结法制备了(1-xmol%)BaTiO₃-xmol%(Bi_0.5Na_0.5)TiO₃(BBNTx)高温无铅正温度系数电阻( positive temperature coefficient of resistivity, PTCR)陶瓷。X射线衍射表明所有的BBNTx陶瓷形成了单一的四方钙钛矿结构。SEM分析结果显示随着BNT含量的增加, 陶瓷晶粒尺寸减小。空气中烧结的0.2mol% Nb掺杂的BBNT1陶瓷, 室温电阻率为~10² Ω·cm, 电阻突跳为~4.5个数量级, 居里温度为~150℃。氮气中烧结的0.3mol% Nb掺杂的BBNTx(10≤x≤60)陶瓷, 同样具有明显的PTCR效应, 居里温度在180~235℃之间。随着BNT含量的增加, 材料的室温电阻率增大, 同时陶瓷的电阻突跳比下降。     

Measurement of high momentum transfer reactions by recoil detection

A method is described for studying reactions at medium energies by measuring the magnetic rigidity, time of flight, and energy loss of the resulting recoil products. The method works best for reactions with two-body final states where one of the outgoing particles is relatively light. A magnetic spectrometer with a special focal plane detector has been used. The detector consists of two position sensitive parallel plate avalanche counters and two proportional counters. Differential cross sections for the ¹²C(p, π⁺¹³C reaction at recoil angles which correspond to the pion being emitted at a backward angle in the center of mass have been measured at bombarding energies of 166 and 186 MeV. Data were also obtained for previously unobserved ¹²C(p, π⁰)¹³N reaction. Several advantages of the method are discussed.