台阶型InGaN量子阱蓝光发光二极管设计与数值模拟

一种特定发光波长(415～425nm)的台阶型InGaN构型量子阱被设计并从理论上进行考察,包括量子阱区域载流子浓度分布、自发辐射复合速率、Shockley-Read-Hall(SRH)辐射复合速率以及输出功率和内量子发光效率的分析.与传统的InGaN构型量子阱结构相比,使用台阶型InGaN构型的量子阱结构,活性区载流子浓度特别是空穴浓度得到明显的改善,输出功率和内量子效率分别提高了52.5%和52.6%.自发发光强度与传统的InGaN构型量子阱发光强度相比也有1.54倍的增强.分析结果暗示SRH非辐射复合速率积分强度的减少被认为是台阶型InGaN构型量子阱光学性能提升的主要原因.     

用MOCVD制作极窄的改进型单量子阱激光器

研究者们采用金属有机化学汽相淀积(MOCVD)工艺制成了低阈值和高微分量子效率的单量子阱和多量子阱激光器。不久前,用分子束外延法已制成极低阈值电流密度的改进型多量子阱激光器。一种更基本的结构-单量子阱激光器,由于结构简单和内界面数较少,也令人感兴趣。然而,现有资料表明,除了很好简并掺杂和在低温(77K)下使用外,一般单量子阱激光器的阱宽小于80(?)时就不能工作。最近,报导过一种梯度折射率波导单独限制异质结激光器。我们采用这种结构制成了极窄单量子     

GaAsSb/GaAs量子阱激光器结构的发光研究

研究了GaAsSb/GaAs应变量子阱及应变补偿量子阱激光器结构的光致发光和电注入发光.结果表明,分子束外延生长温度的改变使量子阱发光性能发生系统性变化,证明生长温度对量子阱中锑的组分和界面质量具有重要影响. 同时,低温光致发光峰的波长随激发功率密度增大发生明显蓝移,具有Ⅱ类量子阱的特点. 应变补偿量子阱激光器在波长为1.3μm附近激射,阈值电流密度约为1.8kA/cm2.     

InGaAsP量子阱激光器结构与阈值电流密度的关系

计入俄歇复合过程的影响,从理论上研究了InGaAsP多量子阱激光器的阈值电流密度。在评述辐射和俄歇过程中考虑了二维载流子在量子化次能带间的所有可能跃迁。俄歇复合电流强烈地依赖于量子阱结构,这样就需要对量子阱激光器的结构进行精心的设计。此外,还阐述了能获得最低阈值电流密度的InGaAsP多量子阱激光器的结构设计程序。     

ZnCdSe量子阱/CdSe量子点耦合结构中的激子复合

采用MOCVD方法制备了ZnCdSe量子阱/CdSe量子点耦合结构,利用低温(5K)光致发光光谱和变密度发光光谱研究了该结构中的激子隧穿和复合.观察到在该结构中存在由量子阱到量子点的激子隧穿现象.改变垒层厚度会对量子阱和量子点的发光产生显著影响.在垒层较薄的阱/点耦合结构中,隧穿效应可以有效地抑制量子阱中的带填充和饱和效应.     

ZnCdSe量子阱/CdSe量子点耦合结构中的激子复合

采用MOCVD方法制备了ZnCdSe量子阱/CdSe量子点耦合结构,利用低温(5K)光致发光光谱和变密度发光光谱研究了该结构中的激子隧穿和复合. 观察到在该结构中存在由量子阱到量子点的激子隧穿现象. 改变垒层厚度会对量子阱和量子点的发光产生显著影响. 在垒层较薄的阱/点耦合结构中,隧穿效应可以有效地抑制量子阱中的带填充和饱和效应.     

InGaAs(P)应变补偿多量子阱结构激光器的理论研究

从理论上分析了应变补偿多量子阱激光器的阈值特性，并以ＩｎＧａＡｓ（Ｐ）体系为例，分别对应变补偿结构和普通应变多量子阱激光器进行了数值计算。结果表明，具有应变补偿结构的激光器可以获得较大的增益和较小的阈值电流密度。其中，阱材料能带结构的变化是使得应变补偿结构激光器具有上述优良特性的决定性因素。     

GaAs/AlGaAs环形激光器的量子阱结构优化

为了研究量子阱结构对半导体环形激光器阈值电流的影响,从F-P腔激光器的振荡条件出发,分析了半导体环形激光器的阈值电流密度与量子阱结构参量的函数关系,并推导出最佳量子阱数的表达式。利用器件仿真软件ATLAS建立环形激光器的等效模型,仿真、分析了不同工作温度下,量子阱数、阱厚及势垒厚度对阈值电流的影响。结果表明,阈值电流随量子阱数和阱厚的增加先减小后增大,存在一组最佳值;在确定合适的量子阱数和阱厚后,相对较窄的势垒厚度有助于进一步降低阈值电流;采用GaAs/AlGaAs材料体系和器件结构,其最佳量子阱结构参量为M=3,dw=20nm及db=10nm。     

GaInAs/GaAs应变量子阱能带结构的计算

讨论了GaInAs/GaAs应变量子阱结构的应变效应 ,给出了量子阱层的临界厚度随In组份的变化关系。由克龙尼克 -潘纳模型计算了GaInAs/GaAs应变量子阱的量子化能级 ,给出了cl -hhl跃迁对应的发射波长随阱宽和In组份的变化关系曲线 ,并与实验测量的GaInAs/GaAs量子阱的发射波长进行了比较 ,基本一致。与此同时 ,对GaInAs/GaAs应变量子阱向长波长方向的发展也进行了计算分析 ,最后计算研究了应变量子阱中价带子能级及态密度的色散关系     

量子阱中δ掺杂的光谱特性

用δ掺杂的方法实现了Be受主在量子阱边界和阱中央的分布,并用光致发光实验证实了这种掺杂的实际效果。第一次用人为的实验方法证实了量子阱中杂质态密度分布的有关理论计算结果。     

Generation of terahertz electromagnetic pulses from quantum-wellstructures

Terahertz generation from semiconductor quantum-well structures pumped by a femtosecond optical pulse is studied. We propose a three-level model for the electrons and holes in the quantum wells. We then solve the coupled optical Bloch equations directly using a Runge-Kutta method and calculate the terahertz radiation field. We study optical rectification and quantum beats caused by charge oscillations in 1) a coupled quantum well in which quantum beats occur between two electron states of the coupled system and 2) a single-quantum-well structure in which quantum beats occur between light-hole and heavy-hole excitons. Our theoretical results agree very well with the experimentally measured terahertz data     

Semiconductor quantum dots

Since the invention of semiconductor lasers, huge improvements in device performance have been achieved, and a large variety of specialized designs for different applications were conceived. Two major steps have played a key role in the improvement of device properties. The first step was the application of semiconductor heterostructures that allowed the separate optimization of optical and carrier confinement. The second step was the introduction of quantum films, also called quantum wells, in the carrier recombination zone (started in the 1980s). This permitted a strong reduction of threshold current density due to an increased density of states at the laser energy. This effect of increased density of states is related to the partial discretization of the allowed energy states of carriers, i.e., electrons and holes, and is based on quantum mechanical principles. One major advantage of quantum-dot structures results from the full three-dimensional carrier confinement on a nanometer scale. Therefore, a semiconductor quantum dots, InAs dots embedded in GaAs, behave like non- or weakly interacting single atoms. In addition, the realization of device-quality quantum dot structures became possible by the introduction of self-organized growth. Both, molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE) techniques, which are capable of the controlled deposition of a fraction of an atomic monolayer, can be used.     

Photoelectric spectroscopy of InAs/GaAs quantum dot heterostructures in a semiconductor/electrolyte system

The photovoltaic effect in the semiconductor/electrolyte junction is an effective method for investigation of the energy spectrum of InAs/GaAs heterostructures with self-assembled quantum dots. An important advantage of this method is its high sensitivity. This makes it possible to obtain photoelectric spectra from quantum dots with high barriers for the electron and hole emission from quantum dots into the matrix even if the surface density of the dots is low (～10⁹ cm^?2). In a strong transverse electric field, broadening of the lines of optical transitions and emission of electrons and holes from quantum dots into the matrix directly from the excited states are observed. The effect of the photovoltage sign reversal was detected for a sufficiently high positive bias across the barrier within the semiconductor. This effect is related to the formation of a positive charge at the interface between the cap layer and electrolyte and of the negative charge on impurities and defects in the quantum dot layer.     

Optical properties of (001) GaN/AlN quantum wells

The absorption coefficient and the photoluminescence of (001) GaN/AlN quantum wells are calculated for several values of the well width, with and without the excitonic effect corrections, in the usual monoelectronic approach and as a many-body problem. The calculation was performed considering separate isolated bands for electrons, heavy and light holes. The monoelectronic approach to the optical properties was performed by assuming infinite well walls and finite well walls, respectively. The calculation including the excitonic effect as a many-body problem was performed within a recent approach designed for low-dimensional systems. The different wells studied here present many localized states and a complicated absorption spectrum. The monoelectronic approach in the infinite quantum well approximation reproduces quite well the spectrum of the wide wells due to the fact that the ground states of electrons and holes are well fixed by this model of quantum well.     

耦合量子阱中激子凝聚研究新进展

玻色-爱因斯坦凝聚成为探索量子世界的一种新方法,而且在半导体纳米结构中激子的凝聚研究取得了很大进展.实验上利用耦合量子阱间接激子中电子和空穴在空间上的分离,显著提高了激子的冷却速度和寿命,成功地把激子冷却到1 K以下,观察到了激子的准凝聚状态.着重介绍冷激子系统凝聚现象、发光图案和宏观有序的激子态.理解这些简并激子系统的形成机理,为其在半导体纳米结构中最终实现玻色-爱斯坦凝聚提供新的机会.     

Master equation and conversion of environmental heat into coherent electromagnetic energy

We derive a non-Markovian master equation for the long-time dynamics of a system of Fermions interacting with a coherent electromagnetic field, in an environment of other Fermions, Bosons, and free electromagnetic field. This equation is applied to a superradiant p–i–n semiconductor heterostructure with quantum dots in a Fabry–Perot cavity, we recently proposed for converting environmental heat into coherent electromagnetic energy. While a current is injected in the device, a superradiant field is generated by quantum transitions in quantum dots, through the very thin i-layers. Dissipation is described by correlated transitions of the system and environment particles, transitions of the system particles induced by the thermal fluctuations of the self-consistent field of the environment particles, and non-local in time effects of these fluctuations. We show that, for a finite spectrum of states and a sufficiently weak dissipative coupling, this equation preserves the positivity of the density matrix during the whole evolution of the system. The preservation of the positivity is also guaranteed in the rotating-wave approximation. For a rather short fluctuation time on the scale of the system dynamics, these fluctuations tend to wash out the non-Markovian integral in a long-time evolution, this integral remaining significant only during a rather short memory time. We derive explicit expressions of the superradiant power for two possible configurations of the superradiant device: (1) a longitudinal device, with the superradiant mode propagating in the direction of the injected current, i.e. perpendicularly to the semiconductor structure, and (2) a transversal device, with the superradiant mode propagating perpendicularly to the injected current, i.e. in the plane of the semiconductor structure. The active electrons, tunneling through the i-zone between the two quantum dot arrays, are coupled to a coherent superradiant mode, and to a dissipative environment including four components, namely: (1) the quasi-free electrons of the conduction n-region, (2) the quasi-free holes of the conduction p-region, (3) the vibrations of the crystal lattice, and (4) the free electromagnetic field. To diminish the coupling of the active electrons to the quasi-free conduction electrons and holes, the quantum dot arrays are separated from the two n and p conduction regions by potential barriers, which bound the two-well potential corresponding to these arrays. We obtain analytical expressions of the dissipation coefficients, which include simple dependences on the parameters of the semiconductor device, and are transparent to physical interpretations. We describe the dynamics of the system by non-Markovian optical equations with additional terms for the current injection, the radiation of the field, and the dissipative processes. We study the dependence of the dissipative coefficients on the physical parameters of the system, and the operation performances as functions of these parameters. We show that the decay rate of the superradiant electrons due to the coupling to the conduction electrons and holes is lower than the decay rate due to the coupling to the crystal vibrations, while the decay due to the coupling to the free electromagnetic field is quite negligible. According to the non-Markovian term arising in the optical equations, the system dynamics is significantly influenced by the thermal fluctuations of the self-consistent field of the quasi-free electrons and holes in the conduction regions n and p, respectively. We study the dependence of the superradiant power on the injected current, and the effects of the non-Markovian fluctuations. In comparison with a longitudinal device, a transversal device has a lower increase of the superradiant power with the injected current, but also a lower threshold current and a lesser sensitivity to thermal fluctuations.     

MOCVD生长带有MQB的量子阱激光器材料

用ＭＯＣＶＤ生长发射波长为８０８ｎｍ的ＡＬＧａＡｓ／ＧａＡｓ量子阱激光器材料。通过在激光器材料的波导中加入多量子势垒（ＭＱＢ）层，有效地限制电子在阱内的复合以及高能电子溢出阱外，从而降低了激光器的阈值电流，提高了它的特征温度。增加了ＭＱＢ后，器件的阈值电流密度Ｉ＿（ｔｈ）从原来的４００～６００Ａ／ｃｍ￣２下降到３００～４００Ａ／ｃｍ￣２，特征温度从１６０Ｋ提高到２１０Ｋ。     

Pure strain effect on differential gain of strained InGaAsP/InPquantum-well lasers

The effect of pure strain on the differential gain of strained InGaAsP/InP quantum-well lasers (QWLs) is analyzed on the basis of the valence band structures calculated by k×p theory. By using an InGaAsP quaternary compound as an active layer, it becomes possible to study the relationship between the differential gain and strain (both tensile and compressive) when both the quantum-well thickness and the emission wavelength are kept constant. It is shown that the tensile strain not only reduces the density of states in the valence band but also increases the energy spacings between the first two valence subbands. It is concluded that tensile strain has a more pronounced impact on the improvement of differential gain in InP-based, strained QWLs as compared with compressive strain     

Selective lasing of InGaAs quantum-wire array on a V-grooved GaAssubstrate by distributed optical feedback

Distributed-feedback (DFB) lasers were fabricated by using strained InGaAs quantum-wire (QWR) arrays on V-grooved GaAs substrates as an active grating. After characterizing the luminescence from the QWRs and parasitic quantum wells (QWLs), a DFB laser cavity incorporating such a QWR array with its emission wavelength matched to the Bragg wavelength was designed and fabricated. The wavelength selectivity of the DFB cavity was found to strongly support the QWR emission, and DFB lasing from QWR gain up to 145 K has been achieved under pulsed current. The emission from the parasitic QWLs was suppressed by the DFB filtering and the loss induced by coupling to radiation modes. The DFB cavity was shown to be essential for obtaining lasing from QWRs on V-grooved substrates     

Relaxation of parameters of thin-film electroluminescent ZnS:Mn-based structures when turned off

Results of experimental study of decay of the current flowing through a thin-film electroluminescent MISIM structure indicate a bimolecular process of electron capture by the surface states of the anode interface. A two-stage model of the process is suggested. At the first stage, the impact Auger capture of hot electrons takes place. At the second stage, upon varying the field direction, the holes of the valence band generated due to tunnel emission from deep centers drift to this interface, where they recombine with electrons of deepest occupied surface states. The electron lifetime and rate of the surface capture of electrons as well as their dependences on excitation parameters are determined. The behavior of the time dependence of the instant internal quantum yield at the decay portion is interpreted.