Ni65Co35薄膜各向异性磁电阻性能的研究

选用Ｎｉ６５Ｃｏ３５合金靶材，利用射频磁控溅射的方法成膜，采用四控针法测量磁电阻率，分别研究了溅射工艺参数（工艺气压、偏压、功率、基片温度等）对薄膜电阻性能的影响，并对影响的机理作了理论上的分析；另外还对Ｎｉ６５Ｃｏ３５薄膜的热处理动力学进行了研究，求取了激活能。研究结果表明，溅射工艺参数对Ｎｉ６５Ｃｏ３５薄膜的电阻力有较大的影响，适当的溅射参数能有效地提高磁电阻率；Ｎｉ６５Ｃｏ３５薄膜退火处理后     

磁控溅射制备免退火钴酸锂正极薄膜的研究

采用射频磁控溅射法制备钴酸锂正极薄膜,通过对溅射功率的研究,制备出不需要进行退火处理仍具有60μAh/(cm2·μm)的比容量的正极薄膜.采用×射线衍射(XRD)和扫描电子显微镜(SEM)对钴酸锂薄膜的结构和形貌进行了研究,并分析了其对钴酸锂薄膜正极性能的影响.结果表明不同功率制备的钴酸锂薄膜具有不同的结晶取向和结晶度,其对正极薄膜的性能有具有决定性的影响,适合的功率下制备的钴酸锂薄膜在不退火处理的情况下仍具有较高的容量和较好的循环性能.同时研究了采用磁控溅射的铝薄膜作为集流体,代替铂或金等贵金属薄膜集流体,大幅减低了薄膜电池正极的制备成本.     

磁控溅射制备V2O5薄膜及全固态薄膜锂电池研究

V_2O_5具有容量高、循环稳定、易于制备成薄膜等特点,是全固态薄膜锂电池理想的正极材料。采用磁控溅射法,以V_2O_5为靶材制备了薄膜,研究了溅射气体Ar/O_2对薄膜结构、形貌及电化学性能的影响,优化了薄膜制备工艺。最终采用磁控溅射法依次沉积集流体薄膜、钒氧化物薄膜、固态电解质薄膜,真空热蒸发金属锂薄膜,成功制备了Al/V_2O_5/Li P ON/Li/Cu全固态薄膜锂电池。薄膜电池在1.7～3.4 V电压范围内,以10μA/cm~2恒电流充放电测试,电池比容量达到25μAh/cm~2,稳定循环超过500次。     

固态薄膜电解质LiSiPON和其性能研究

用0.5Li3PO4-0.5Li2SiO3为靶材,用射频磁控溅射的方法在N2气氛中制备了非晶结构的固态电解质LiSiPON薄膜。N和Si的引入提高了Li2O-P2O5体系的离子电导率,在室温时电解质薄膜的离子电导率为4.83×10-6S/cm。LiSiPON电解质薄膜与Pt的分解压为5.7V左右,是一种很有潜力的应用于全固态薄膜锂离子蓄电池的电解质材料。     

退火对低温射频磁控溅射Ba铁氧体薄膜结构及磁特性的影响

用ＲＦ磁控溅射法在纯Ａｒ气中，在硅基片不加热，制备了Ｂａ铁氧体薄膜，研究了退火温度对薄膜Ｃ轴垂直取向，结构及磁特性的影响，结果表明薄膜在７００℃氧气中退火可获得良好Ｃ轴垂直膜面择优取向，该薄膜的饱和磁化强度和矫顽力分别是Ｍｓ＝２９６ｋＡ／ｍ，Ｈｃ＝３１０．４ｋＡ／ｍ。退火温度过低或过高，都不利于形成Ｃ轴垂直膜面的择优取向。     

磁控溅射法沉积TCO薄膜的电源技术

电源在磁控溅射法制备透明导电氧化物(TCO)薄膜的技术中起着重要的作用。本文重点介绍了磁控溅射TCO薄膜的电源技术发展现状及进展,首先简要说明了目前应用最广泛的直流电源技术及具备灭弧能力的脉冲电源技术的原理和主要优缺点。进一步的,介绍了具备快速灭弧补偿功能的新型直流电源技术和模块化电源技术。最后进一步分析了代表新一代技术的高功率脉冲磁控溅射(HPPMS)电源的基本原理和优良特性,并指出其发展所面临的挑战。     

厚度对磁控溅射CoPt永磁薄膜磁性能的影响

CoPt永磁薄膜有较高的剩磁和矫顽力,通常用作磁传感器中的磁偏置或者微机电系统(MEMS)中的磁制动部件。CoPt薄膜多采用磁控溅射或离子束沉积工艺制备。采用磁控溅射制备了不同厚度CoPt/Cr薄膜。结果显示,CoPt薄膜矫顽力随薄膜厚度增加而降低;薄膜较厚时(大于400?),剩磁随薄膜的厚度增加而降低。这主要是因为CoPt薄膜具有密集六方结构,其自然生长为(002)面,具有垂直各向异性。由于Cr缓冲层存在,CoPt薄膜较薄时沿(1010)面生长,从而具有面内各向异性;但随薄膜厚度的增加,薄膜会沿(002)生长从而具有垂直各向异性,导致薄膜磁性能降低。     

靶材密度对射频磁控溅射法制备ITO薄膜性能的影响

以不同密度的氧化锡铟（ITO））靶材为原料,采用射频磁控溅射法,在室温下沉积并经750℃退火,获得了电阻率为1．56×10^-4Ω·cm、可见光透过率为87％的ITO薄膜。对不同密度靶材制备的ITO薄膜的微观结构、电学及光学性能进行了表征与探讨。结果表明,采用射频磁控溅射法时,不同靶材密度对ITO薄膜的沉积速率、结构、电学和光学性能均无显著影响。该结果为采用低密度ITO靶材制备高品质ITO薄膜提供了一个新的思路。     

室温无反应磁控溅射法制备ZAO导电薄膜及其特性研究

以氧化铝(Al2O3)掺杂的ZnO陶瓷靶材为基础,室温下采用无氧直流磁控溅射法在载玻片衬底上制备了ZnO∶Al(ZAO)透明导电薄膜,研究了不同的Al2O3掺杂量对薄膜微观结构、电阻率和透光率性能的影响。结果表明:掺杂量大于1%(质量分数,下同)的薄膜均呈c轴择优取向生长,薄膜致密无裂纹,具有光滑表面;掺杂量对薄膜的电阻率影响显著,当掺杂量为3%时,薄膜的电阻率最小,仅为7.4×10-3Ω.cm;掺杂量对薄膜的透光性无明显影响,不同掺杂量的薄膜在可见光区的平均透光率接近90%。     

磁控溅射在锂离子电池正极中应用的进展

综述了磁控溅射技术应用于薄膜锂离子电池正极材料制备与掺杂改性的研究进展.分别讨论了LiCoO2、V2O5、LiMn2O4、LiNiO2及其掺杂物等薄膜正极的制备与改性及所得电极材料的电化学性能,并对研究方向做了简单的评述.     

Preparation of Si-Added SrBi2Ta2O9 Ferroelectric Thin Films by RF Magnetron Sputtering

Si-added SrBi₂Ta₂O₉ (SBT) ferroelectric films were prepared by RF magnetron sputtering on a Pt/Ti/SiO₂/Si (100) structure. The films were deposited at temperatures below 100°C for surpressing Bi evaporation, and crystallized at 800°C in air. A typical composition was Sr_0.79Bi_2.37Ta_2.00Si_0.2O_x. The remanent polarization value (2Pr) of the Si-added SBT film was 16 μC/cm². The Si atom addition was found to be effective in improvement of the fatigue and leakage current of SBT ferroelectric films. The leakage current density was further improved by annealing in the high-pressure oxygen ambient at 7 atms.     

磁控溅射对薄膜附着力的影响

磁控溅射技术因具有溅射速率高、无污染、可制备各种不同功能的薄膜等优点而得到广泛地应用。综述了薄膜附着力机理,分析了影响薄膜性能的因素,结果表明,薄膜的附着力是影响薄膜性能的主要因素。影响薄膜附着力的因素有:基材的表面清洁度、制备薄膜的各种工艺参数、热处理、原料的纯度等。     

Control of Crystallographic Structure of Aluminum Nitride Films Prepared by Magnetron Sputtering

Aluminum nitride (AlN) films were prepared by using reactive magnetron (RMS). The substrate temperature (T_s) was varied from room temperature to 700°C, and RF power (P _w) from 100 to 250 W, and three different substrate materials (e.g. Si(100), Pt(111)/Si(100) and Al₂O₃(00·1)) were used. The mean free path of the species in the vacuum was controlled to be much shorter than the target-to-substrate distance, so that T_s and P _w have the equivalent effect in affecting the effective thermal energy of the species after landing on the substrate. With these conditions, the film structure was found to cover a broad range, varying from nearly amorphous (na-), polycrystalline (p-), (00·1) texture (t-) and epitaxial (e-) structure. The structural change is supposed to be governed the successive increase in the thermal energy of the species on the substrate. The use of substrate material having lattice matching with the AlN structure further assists the (00·1) preferential growth when the species are mobile enough at the settings of high T_s and P _w.     

The Study of Ferroelectric La-Doped PbTiO3 Thin Films Prepared by RF Magnetron Sputtering

Ferroelectric La-modified lead titanate (PLT) thin film were grown on Pt/Ti/SiO2/Si by sputtering the Pb_0.93La_0.07TiO₃ targets containing an amounts of excess 8% PbO. The effects of sputtering and annealing conditions on the crystalline structures and the surface morphologies of the PLT thin films have been investigated. The remanent polarization (Pr) and the coercive field of the PLT film through rapid thermal annealing (RTA) was 10.2 μC/cm² and 45 kV/cm respectively. The maximum pyroelectric coefficient reached 19 nC/cm².K at 20°C.     

溅射氩气压对TbFeCo薄膜磁和磁光性能的影响

研究了射频磁控溅射氩气压的变化对TbFeCo薄膜的磁和磁光特征的影响，以及不同溅射氩气压下TbFeCo薄膜退火后的特性，溅射氩气压的变化通过改变表面状态影响TbFeCo薄膜矫顽力和克尔角，另外，溅射氩气压的变化会影响被溅射原子轰击薄膜的速度，从而影响TbFeCo薄膜的垂直磁各向异性，矫顽力，磁光点尔效应。     

XPS Studies of PZT Films Deposited by Metallic Lead and Ceramic PZT Dual Target Co-Sputtering

The dependence of the chemical states of the constituent elements of a PZT thin film prepared by RF magnetron co-sputtering using ceramic PZT and metallic Pb dual target materials on the Ar⁺ etching time was studied using XPS. The metallic Pb, lead oxide and Pb in PZT led to the different binding energies of the Pb lines. The intensity of binding energy of metallic Pb relative to that of bulk Pb increased with the depth of the film. The peak position and the line shape of the O_1s electron was associated with the different binding energies of oxygen, which interacts with Pb and Ti and Zr atoms to form the metal oxides, and the softening of the O_1s bonds by the bonding interaction in Ti–O, Zr–O and Pb–O. The broad Ti_2p3/2 line in the PZT film could has been associated with the various charge state of Ti and no spectral changes of Ti_2p and Zr_3d were observed as the Ar⁺ ion sputtering time was increased.     

Preparation of BaPbO3 Electrode Thin Films by RF Magnetron Sputtering

For electrode materials of Pb(Zr,Ti)O₃ (PZT) thin films in ferroelectric random access memory (FeRAM), various materials have been studied. As new electrode material with which the polarization and fatigue properties are improved, we take notice of barium metaplumbate BaPbO₃ (BPO). Because the BPO contained lead (Pb) and oxygen is conductor that adopted same perovskite structure as PZT. BPO thin films were prepared by rf magnetron sputtering on various substrates. (SiO₂/Si, MgO, Al₂O₃ and Pt-coated substrates), and influence of growth conditions (sputtering gas, rf power, the substrate-heating temperature and post anneals) on crystallization and conductivity were investigated. In case of post anneal after sputtering at room temperature, perovskite single phase was obtained above 400°C. In case of substrate heating while sputtering, without post anneal, perovskite single phase was obtained at 350–500°C on SiO₂/Si substrates (110) preferred orientation BPO films obtained at low temperature, and resistivity of the films decreased at decreasing sputtering temperature. Resistivity of the film at substrate temperature 350°C was 3 × 10^?3 Ω cm. In the case of single crystal substrate, the BPO films were epitaxially grown. Orientation of the films was varied with the sputtering condition. The epitaxial PZT thin films were also grown on the BPO, revealing that PZT(111)[011] //BPO(111)[011] //Pt(100)[011] //MgO(100)[011] and PZT(111)[011] //BPO(111)[011] //Pt(111)[011] //Al₂O₃(001)[100] structures were obtained, and their ferroelectric properties were also evaluated.     

新型直流磁控溅射电源的研究与设计

研究并设计了一种适用于直流磁控溅射的新型数字化电源。针对直流磁控溅射工艺的要求,从系统控制策略和电弧保护两方面进行研究。设计了带指令电流前馈补偿的双闭环控制策略,并给出详细的设计方法;提出溅射过程出现异常弧光现象时,针对软弧和硬弧采取不同保护方式的两级保护方法,并描述了基于HCPL-316J的驱动电路设计。搭建10 kw实验样机进行验证,结果表明带指令电流前馈补偿的双闭环控制策略具有良好的动态性和稳定性,两级保护方法可有效熄灭电弧,提升溅射的质量。