Synthesis and study of structural,dielectric, magnetic and magnetoelectric properties of K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>NbO<Subscript>3</Subscript>–CoMn<Subscript>0.2</Subscript>Fe<Subscript>1.8</Subscript>O<Subscript>4</Subscript> composites

Magnetoelectric (ME) composites consisting of K_0.5Na_0.5NbO₃ (KNN) as ferroelectric phase and CoMn_0.2Fe_1.8O₄ (CMFO) as ferrite phase with general formula (x) CoMn_0.2Fe_1.8O₄–(1???x) K_0.5Na_0.5NbO₃ (x?=?10, 20, 30, 40 and 50 wt%) were synthesized using solid state reaction method. X-ray diffraction analysis asserts the existence of component phases including spinel phase of CMFO and orthorhombic phase of KNN. Field emission scanning electron microscopy has been used for studying the morphology and calculation of average grain size. The temperature dependent dielectric properties including dielectric constant (\(\varepsilon ^{\prime}\)) and dielectric loss (tan δ) at different frequencies has been studied and both are found to increase with incorporation of CMFO. Magnetic hysteresis loops have been measured at temperatures of 300 and 5 K. Variation of magnetization versus temperature has been studied in field cooled and zero field cooled modes. Polarization versus electric field (P–E) hysteresis loops are obtained at room temperature indicating presence of ferroelectric ordering in the composites at room temperature. The remnant polarization (2P_r) and coercive field (2E_c) are found to decrease linearly with incorporation of CMFO. ME voltage coefficient (α_ME) has been measured. The maximum value of α_ME is found to be 5.941 mV/cm-Oe for 10% CMFO–90% KNN bulk composite.     

Chemical interaction of InAs,InSb, GaAs,and GaSb with (NH<Subscript>4</Subscript>)<Subscript>2</Subscript>Cr<Subscript>2</Subscript>O<Subscript>7</Subscript>–HBr–C<Subscript>4</Subscript>H<Subscript>6</Subscript>O<Subscript>6</Subscript> etching solutions

This paper presents results on the kinetics and mechanism of the physicochemical interaction of InAs, InSb, GaAs, and GaSb semiconductor surfaces with (NH₄)₂Cr₂O₇–HBr–C₄H₆O₆ etching solutions under reproducible hydrodynamic conditions in the case of laminar etchant flow over a substrate. We have identified regions of polishing and nonpolishing solutions and evaluated the apparent activation energy of the process. The surface morphology of the crystals has been examined by microstructural analysis after chemical etching. The results demonstrate that the presence of C₄H₆O₆ in etchants helps to reduce the overall reaction rate and extend the region of polishing solutions.     

BaFe<Subscript>12</Subscript>O<Subscript>19</Subscript> films produced from BaFe<Subscript>2</Subscript>O<Subscript>4</Subscript>/α-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript> heterostructures

BaFe₁₂O₁₉ hexaferrite films have been produced on thermally oxidized single-crystal silicon (SiO₂/Si) substrates by sequential ion-beam sputtering of BaFe₂O₄ and α-Fe₂O₃ targets in an argon-oxygen atmosphere. Their crystal structure has been studied, and the origin of the impurity phases forming during heat treatment has been identified. The results show that heat treatment may lead to the formation of eutectic melts. As a result, the hexaferrite films may contain spherulites.     

Catalytic combustion of methane over Pt and PdO-supported CeO<Subscript>2</Subscript>–ZrO<Subscript>2</Subscript>–Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>/γ-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> catalysts

Catalytic combustion of methane was investigated on Pt and PdO-supported CeO₂–ZrO₂–Bi₂O₃/γ-Al₂O₃ catalysts prepared by a wet impregnation method in the presence of polyvinylpyrrolidone. The catalysts were characterized by X-ray fluorescence analysis, X-ray powder diffraction, X-ray photoelectron spectra, transmission electron microscopy, and BET specific surface area measurements. The Pt/CeO₂–ZrO₂–Bi₂O₃/γ-Al₂O₃ and PdO/CeO₂–ZrO₂–Bi₂O₃/γ-Al₂O₃ catalysts were selective for the total oxidation of methane into carbon dioxide and steam, and no by-products such as HCHO, CO, and H₂ were obtained. The catalytic activities of the PdO/CeO₂–ZrO₂–Bi₂O₃/γ-Al₂O₃ catalysts were relatively higher than those of the Pt-supported catalysts, due to the facile re-oxidation of metallic Pd into PdO based on lattice oxygen supplied from the CeO₂–ZrO₂–Bi₂O₃ bulk. A decrease in the calcination temperature during the preparation process was found to be effective in enhancing the specific surface area of the catalysts, whereby particle agglomeration was inhibited. Optimization of the PdO amount and calcination temperature enabled complete oxidation of methane at temperatures as low as 320 °C on the 11.6 wt% PdO/CeO₂–ZrO₂–Bi₂O₃/γ-Al₂O₃ catalyst prepared at 400 °C.     

Microstructure,interfaces and creep behaviour of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>–Sm<Subscript>2</Subscript>O<Subscript>3</Subscript> (ZrO<Subscript>2</Subscript>) eutectic ceramic composites

New compositions in the melt-grown eutectic ceramics field are investigated for thermomechanical applications. This paper is focused on the Al₂O₃–Sm₂O₃–(ZrO₂) system. The studied compositions give rise to interconnected microstructures without anisotropy along the growth direction. At variance with the binary eutectic Al₂O₃–SmAlO₃, the homogeneity of the microstructure of the Al₂O₃–SmAlO₃–ZrO₂ ternary eutectic is less sensitive to the growth rate. Interfaces between the alumina and perovskite phases are investigated by high-resolution transmission electron microscopy (TEM). They are semi-coherent. In stepped interfaces, the facets are parallel to dense planes of each phase. The steps have a dislocation character and may accommodate both misfits. The ternary eutectic displays a very good creep behaviour with strain rates very close to those obtained on other previously studied eutectics in the Al₂O₃–RE₂O₃(RE = Y, Gd, Er)–ZrO₂ systems. The deformation micromechanisms are analysed by TEM in the three eutectic phases. After creep, dislocations are present in every phase. The activation of unusual slip systems (pyramidal slip in the alumina phase) shows that high local stresses can be reached. The presence of dislocation networks with low energy configurations is consistent with predominance of dislocation climb processes controlled by bulk diffusion.     

Glasses formation,characterization, and crystal-structure determination in the Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>–Sb<Subscript>2</Subscript>O<Subscript>3</Subscript>–TeO<Subscript>2</Subscript> system prepared in an air

A glass-forming domain is found and studied within Bi₂O₃–Sb₂O₃–TeO₂ system. The glasses composition were obtained in pseudo-binary xSbO_1.5, (1−x)TeO₂ for 0.05 ≤ x ≤ 0.20. The constitution of glasses in the system Sb₂O₃–TeO₂ was investigated by DSC, Raman, and Infrared spectroscopy. The influence of a gradual addition of the modifier oxides on the coordination geometry of tellurium atoms has been elucidated based Infrared and Raman studies and showed the transition of TeO₄, TeO₃₊₁, and TeO₃ units with increasing Sb₂O₃ content. XRD results reveal the presence of three crystalline: γ-TeO₂, α-TeO₂, and SbTe₃O₈ phases during the crystallization process. The density of glasses has been measured. The investigation in the ternary system by the solid state reaction using XRD reveals the existence of a solid solution Bi_1−x Sb_1−x Te_2x O₄ isotopic to BiSbO₄ with 0 ≤ x ≤ 0.1.     

Atomistic structure and energetics of interface between Mn-doped γ-Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> and MgAl<Subscript>2</Subscript>O<Subscript>4</Subscript>

The interface between an Mn-doped γ-gallium oxide (Ga₂O₃) thin film and an MgAl₂O₄ (001) substrate has been investigated using high-resolution transmission electron microscopy (HRTEM), high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), and first-principles calculations. A high-quality Mn-doped γ-Ga₂O₃ film with a defective spinel structure has been epitaxially grown by pulsed laser deposition. The γ-Ga₂O₃ crystal shows an uniform tetragonal distortion with a tetragonality of 1.05 throughout the film thickness of 75 nm. HRTEM and HAADF-STEM observations reveal that the γ-Ga₂O₃ and MgAl₂O₄ crystals form a coherent interface without any interfacial layers or precipitates. The atomistic structure and energies are theoretically evaluated for the interfaces with two types of termination plane, i.e., Mg- and Al₂O₄-termination of MgAl₂O₄. The cation sublattice is found to be continuous for both interfaces despite the defective spinel structure of Mn-doped γ-Ga₂O₃ with some vacant cation sites. The Al₂O₄-termination shows a lower interfacial energy than the Mg-termination under most conditions of the chemical potentials. This behavior is attributed to the energetic preference of the Mn–Al₂O₄ local configuration at the interface.     

Superconducting Bands Stabilizing Superconductivity in YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7</Subscript> and MgB<Subscript>2</Subscript>

It is shown that the ceramic superconductor YBa₂Cu₃O₇ as well as the superconducting intermetallic compound MgB₂ possesses a narrow, partly filled “superconducting band” with Wannier functions of special symmetry in their band structures. This result corroborates previous observations about the band structures of numerous superconductors and non-superconductors showing that evidently superconductivity is always connected with such superconducting bands. These findings are interpreted in the framework of a nonadiabatic extension of the Heisenberg model. Within this new group-theoretical model of correlated systems, Cooper pairs are stabilized by a nonadiabatic mechanism of constraining forces effective in narrow superconducting bands. The formation of Cooper pairs in a superconducting band is mediated by the energetically lowest boson excitations in the considered material that carry the crystal-spin angular momentum 1⋅ℏ. These crystal-spin-1 bosons are proposed to determine whether the material is a conventional low-T _c or a high-T _c superconductor. This interpretation provides the electron–phonon mechanism that enters the BCS theory in conventional superconductors.     

Growth and structure of Mg(Fe<Subscript>0.8</Subscript>Ga<Subscript>0.2</Subscript>)<Subscript>2</Subscript>O<Subscript>4 − δ</Subscript> films

Films 150–200 nm in thickness, with the nominal composition Mg(Fe_0.8Ga_0.2)₂O_{4 − δ} have been grown on (100) single-crystal silicon substrates by ion-beam sputtering in vacuum. The effect of growth and annealing conditions on the crystal structure and morphology of the films has been studied, and the thermal conditions for the growth of spinel-structure films have been optimized.     

Chemical interaction of InAs,InSb, GaAs,and GaSb crystals with aqueous (NH<Subscript>4</Subscript>)<Subscript>2</Subscript>Cr<Subscript>2</Subscript>O<Subscript>7</Subscript>–HBr solutions

We have studied the nature and kinetics of the chemical interaction of InAs, InSb, GaAs, and GaSb crystals with aqueous (NH₄)₂Cr₂O₇–HBr solutions. The dissolution rate of the crystals has been measured as a function of etchant composition, solution stirring rate, and temperature. The results demonstrate that the dissolution rate of the semiconductors is diffusion-limited. We have determined the composition ranges of polishing solutions, optimized their compositions, and found conditions for the dynamic chemical polishing of the semiconductors. Ultrasmooth polished semiconductor surfaces have been obtained, with R _a ≈ 1 nm.     

Microwave and photoluminesent characterizations of (Ca<Subscript>2</Subscript>Mg<Subscript>3</Subscript>)(X<Subscript>1.75</Subscript>Sb<Subscript>0.25</Subscript>)TiO<Subscript>12</Subscript> [X = Nb and Ta] ceramics

(Ca₂Mg₃)(X_1.75Sb_0.25)TiO₁₂ [X = Nb and Ta] ceramics are prepared through the conventional solid-state route. The samples are calcined at 1,100 and 1,180 °C, and are sintered at 1,250 and 1,375 °C. The substitution of Sb decreases the calcination and sintering temperatures of pure (Ca₂Mg₃)(Nb/Ta)₂TiO₁₂. The structure of the samples is analyzed using X-ray diffraction method. The microstructure of the sintered pellet is studied using scanning electron microscopy. The dielectric properties such as dielectric constant (ε_r), quality factor (Q_uxf) and temperature coefficient of resonant frequency (τ_f) are measured in the microwave frequency region. By Sb substitution, thermal stability is achieved, with the increase in dielectric constant, without much change in the quality factor. The materials have intense emission lines in the wavelength region 500–700 nm. The compositions have good microwave dielectric properties and photoluminescence and hence are suitable for dielectric resonator and ceramic laser applications.     

Magnetic Anomalies and Electronic Structure of Ce<Subscript>2</Subscript>Cu<Subscript>2</Subscript>Mg and Ce<Subscript>2</Subscript>Pd<Subscript>2</Subscript>Mg

The intermetallic compounds RE ₂Cu₂Mg and RE ₂Pd₂Mg (RE=La, Ce) were prepared and characterized by magnetic susceptibility and heat-capacity measurements. They crystallize with an ordered U₃Si₂ type structure (space group P4/mbm) and the cerium compounds contain stable trivalent cerium ions, which undergo antiferromagnetic ordering at ∼7.5 and ∼4 K, respectively. In high magnetic fields Ce₂Cu₂Mg exhibits spin reorientation with critical field strength of 40 kOe at 5 K. The data are compared to the non-magnetic isotypic compounds La₂ T ₂Mg (T=Cu, Ni, Pd) and to the already reported intermediate valent Ce₂Ni₂Mg.     

Syntheses and proton conductivity of mesoporous Nd<Subscript>2</Subscript>O<Subscript>3</Subscript>–SiO<Subscript>2</Subscript> and NdOCl–SiO<Subscript>2</Subscript> composites

Two mesoporous oxide composites of Nd₂O₃–SiO₂ and NdOCl–SiO₂ were synthesized using SBA-15 as a template and neodymium nitrate or neodymium chloride as a precursor. The porous Nd₂O₃–SiO₂ with a SBA-15-like structure has amorphous walls and the porous NdOCl–SiO₂ with a replicated structure of SBA-15 has crystalline walls. These porous materials were characterized by X-ray diffraction, transmission electron microscopy and nitrogen adsorption/desorption. They exhibited significant proton conductivities in the presence of moisture at low temperatures and the highest conductivity observed was 4.55 × 10⁻⁴ S/cm at 47 °C in wet air (RH = 28.6%).     

High-damping and high-rigidity composites of Al<Subscript>2</Subscript>TiO<Subscript>5</Subscript>–MgTi<Subscript>2</Subscript>O<Subscript>5</Subscript> ceramics and acrylic resin

High-damping materials are widely used in engineering fields. In order to increase the precision of vibration control to different levels, high-damping materials with high-rigidity are required. This study attempts to develop a new high-damping high-rigidity material using ductile ceramics based on the Al₂TiO₅–MgTi₂O₅ system, which has many continuous microcracks along the grain boundaries. Ductile ceramics have high internal friction (Q ⁻¹ = 0.01–0.037), but very low rigidity (<10 GPa). The rigidity of Al₂TiO₅–MgTi₂O₅ ceramics was improved by combining them with a polymer such as acrylic resin. The Young’s modulus and internal friction of the composites of Al₂TiO₅–MgTi₂O₅ ceramics and acrylic resin are investigated. They show high-damping capacity (Q ⁻¹ = 0.03–0.04) with high rigidity (E = 50–60 GPa), and their properties depend on those of the polymer. Thus, the composites fabricated using the above method can serve as high-damping high-rigidity materials.     

Dual relaxation behaviors and large electrostrictive properties of Bi<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>–Sr<Subscript>0.85</Subscript>Bi<Subscript>0.1</Subscript>TiO<Subscript>3</Subscript> ceramics

Lead-free ceramics (1???x)Bi_0.5Na_0.5TiO₃–xSr_0.85Bi_0.1TiO₃ (BNT–xSBT, x?=?0.4, 0.5, 0.6 and 0.7) were prepared by a solid-state reaction process. Coexistence of ferroelectric relaxation at low temperature and Maxwell–Wagner dielectric relaxation at high temperature was revealed for the first time in this system. Meanwhile, hysteresis-free P–E loops combined with a very high piezoelectric strain coefficient (d₃₃) of 1658 pC/N concurrently with large electrostrictive coefficient Q?=?0.287 m⁴C^?2 were achieved. The ferroelectric relaxor behavior and large electrostrictive strain might be linked to easy reorientation and reversal of ergodic PNRs and the combined effect of Bi off-center position and lone pair electrons.     

Microstructure and properties of the Ba<Subscript>0.75−x</Subscript>Ca<Subscript>x</Subscript>La<Subscript>0.25</Subscript>Fe<Subscript>11.6</Subscript>Co<Subscript>0.25</Subscript>Ti<Subscript>0.15</Subscript>O<Subscript>19</Subscript> hexaferrites

In the case of Ti⁴⁺ remain unchanged, the Ca²⁺ substituted Ba_0.75?xCa_xLa_0.25Fe_11.6Co_0.25Ti_0.15O₁₉ (0?≤?x?≤?0.05) were prepared by conventional solid-state reaction method at temperature of 1280 °C. A ball-to-power weight ratio of 10:1. Their crystal structure and magnetic properties were mainly investigated. The results show that the single magnetoplumbite phase structure transformed into the multiphase structure. Meanwhile, the small amount of α-Fe₂O₃ phase existed in M-type phase. The micrographs were observed by a field emission scanning electron microscopy (SEM). Vibrating sample magnetometer (VSM) was used to analyze the magnetic properties. The saturation magnetization (M _s ) first increases then decreases when x from 0 to 0.03. But, when x from 0.03 to 0.05, the saturation magnetization (M _s ) first increases then decreases too. The maximum value is at x?=?0.04 (M _s ?=?70.73 emu/g). The value of coercivity (H _c ) first increases then decreases when x from 0 to 0.04. But, the value increased when x from 0.04 to 0.05. The maximum value is at x?=?0.02 (H _c ?=?1691 Oe).     

Crystallization and microstructural evolution of MgO–Al<Subscript>2</Subscript>O<Subscript>3</Subscript>–SiO<Subscript>2</Subscript>–TiO<Subscript>2</Subscript>–La<Subscript>2</Subscript>O<Subscript>3</Subscript> glass-ceramics

Crystallization and microstructure of glasses with the molar compositions 1MgO·1.2Al₂O₃·2.8SiO₂·1.2TiO₂·xLa₂O₃ (x = 0.1 and 0.4) were thermally treated at different temperatures in the range from 950 to 1250 °C and then analyzed by X-ray diffraction and scanning electron microscopy, in combination with energy-dispersive X-ray spectroscopy and electron backscatter diffraction. It was found that the microstructure is first homogeneous with the precipitation of randomly distributed crystals and then indialite domains with embedded perrierite and rutile crystals are formed. For higher temperatures or prolonged times, more domains appear and expand into the bulk of the sample. Finally, the entire sample consists of the indialite domains and the boundaries that are enriched in rutile, perrierite, and magnesium aluminotitanate. Nevertheless, very distinct differences are observed between the samples with different La₂O₃ concentrations. For the sample with x = 0.4, the domains were detected at lower temperatures, while the quantity and size of the domains increase faster due to the promoted precipitation of indialite. For the sample with x = 0.1, in addition to the domain boundaries, secondary boundaries between the “regions” (assemblages of the domains) are observed in a larger length scale. The average size of the crystalline phases found between the “regions” is larger than that typically observed at the domain boundaries. The sizes of the crystals at the boundaries decrease with higher concentrations of La₂O₃, and the crystals (especially perrierite) within the domains become larger, resulting in a more homogeneous microstructure. This results in better dielectric properties, i.e., much higher quality factor for the sample with x = 0.4 in comparison to that with x = 0.1 after heat-treatment at 1150 or 1250 °C.     

Crystal growth,X-ray diffraction characterization,and Mössbauer spectroscopy of FeIn<Subscript>2</Subscript>S<Subscript>4</Subscript>-In<Subscript>2</Subscript>S<Subscript>3</Subscript> solid solutions

Crystals of (FeIn₂S₄)_{1 ? x} (In₂S₃) _x solid solutions consisting of large blocks have been grown by directional solidification (horizontal Bridgman process). FeIn₂S₄, In₂S₃, and the solid solutions are shown to crystallize in the spinel structure. The composition dependence of their unit-cell parameter a follows Vegard's law. The local states of the Fe ions in the solid solutions have been studied by Mössbauer spectroscopy in a transmission geometry.     

Variable—Range hopping in Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-K<Subscript>2</Subscript>B<Subscript>4</Subscript>O<Subscript>7</Subscript> glasses

The dc conductivity of the glasses in the Fe₂O₃-Bi₂O₃-K₂B₄O₇ system was studied at temperatures between 223 and 393 K. At temperatures from 300 to 223 K, T^–1/4 (T is temperature) dependence of the conductivity was found, however, both Mott variable-range hopping and Greaves intermediate range hopping models are found to be applicable. Mott and Greaves parameters analysis gave the density of states at Fermi level N (E_F) = 3.13 × 10²⁰–21.01 × 10²⁰ and 1.93 × 10²¹–16.39 × 10²¹ cm^–3eV^–1 at 240 K, respectively. The variable-range hopping conduction occurred in the temperature range T = 300–223 K, since W_D was found to be large (W_D = 0.08–0.14 eV for these glasses) and dominated the conduction at T < 300 K.     

Dielectric and piezoelectric properties of Bi<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>–BaNb<Subscript>2</Subscript>O<Subscript>6</Subscript> lead-free piezoelectric ceramics

Lead-free piezoelectric ceramics (1 − x)Bi_0.5Na_0.5TiO₃–xBaNb₂O₆ (BNT–BN100x), a new member of the BNT-based group, was prepared by conventional solid state reaction. X-ray diffraction showed that BaNb₂O₆ (BN) diffused into the lattice of Bi_0.5Na_0.5TiO₃ to form a solid solution with perovskite-type structure. The temperature dependence of dielectric constant ε_r revealed that the solid solution underwent two phase transitions from ferroelectric to anti-ferroelectric and anti-ferroelectric to paraelectric. Both the transition temperature T _d and T _m were shifted to lower with the increasing content of BaNb₂O₆. The temperature dependence of dielectric constant at different frequency revealed that the solid solution exhibited obviously dielectric relaxation characteristics. The sample with x = 0.6 mol% exhibited excellent electrical properties, piezoelectric constant d ₃₃ = 94 pC/N; electromechanical coupling factor k _p = 0.185. The results showed that BNT–BN100x ceramics were good candidates for use as lead-free piezoelectric ceramics.