平板显示用场发射冷阴极材料

简要介绍了场致发射显示器件的结构和原理,全面总结了人们正在研究的各种场发射冷阴极材料,其中主要包括金属场致发射阵列、硅场致发射阵列、金刚石及其相关薄膜、碳纳米管和纳米纤维、一维纳米材料、碳化物、氮化物薄膜等.并展望了场致发射显示器件的发展前景.     

场致发射阴极材料的研究进展

场致发射显示是一种具有良好应用前景的新型显示技术,场致发射阴极材料是场致发射显示器的核心内容.综述了近年来场致发射材料的研发热点,对金属、硅、金刚石及类金刚石薄膜、GaAs和CaN等场致发射材料的研究做了简要的归纳,同时介绍了碳纳米管、表面传导型场致发射材料及采用定向凝固技术制备的Si-TaSi2共晶自生复合场致发射材料等新型场致发射材料的研究进展,并展望了场致发射材料的研究及应用前景.     

丝网印刷nano-SiC薄膜阴极的电子特性的研究

研究了低成本大面积丝网印刷在玻璃衬底上均匀的纳米碳化硅(nano-SiC)薄膜的场致发射特性。提出了机械分散团聚的nano-SiC的方法,实验了适合导电玻璃衬底上制备nano-SiC薄膜的浆料配方,摸索导电玻璃衬底上nano-SiC薄膜的烧结工艺,研究了不同nano-SiC含量的薄膜的场发射特性,得到了最佳场致发射特性的配方比例。对样品进行微观分析和表征。具有稳定均匀场致发射性能的nano-SiC薄膜可作为显示器器件的阴极材料。     

场致电子发射薄膜材料研究评述

场致电子发射(场发射)薄膜材料由于在场发射平板显示器、电子源等诸多高性能真空微电子器件上具有广阔的应用前景,引起了人们广泛的关注与研究兴趣.综述了场发射薄膜材料的理论与实验研究进展,并评述了场致电子发射薄膜材料研究的瓶颈问题及未来发展方向与趋势.     

无氧铜基金刚石薄膜场致发射特性研究

采用微波等离子体方法在铜片上沉积了多晶金刚石薄膜，用该薄膜制成的场致发射体的开启电压较低，发射电流密度较高。利用自制的场致发射阵列阴极高真空测试台测试了1-100mA/cm^2的发射电流密度特性，对应的电场强度为2.0-3.5MV/m。从拟合F-N公式得到的功函数φ≈0.025eV,所发射电子轰击荧光屏后能产生明亮的光斑。     

丝网印刷纳米ZnO薄膜阴极场致发射的研究

鉴于化学气相沉积生长方法成本高且很难制备出大面积均匀的纳米ZnO薄膜,采用成本低的丝网印刷方法制备了大面积纳米ZnO阴极薄膜.测试研究了分散、热烧结、退火处理对ZnO薄膜的场致发射特性的影响,提出了低成本丝网印刷制备大面积ZnO薄膜阴极热烧结和退火处理的工艺,根据样品的形貌、发射特性和均匀稳定发光的阳极可以判断,最高温度843K的热烧结和823K、10min的退火处理适实用于制作大面积纳米ZnO薄膜场致发射阴极.     

场致发射阴极材料的研究与进展

场致发射显示器是一种新型的具有竞争力的平板显示器,场致发射阴极是场致发射显示器的重要组成部分.介绍了各种场致发射阴极材料及其特性,分析了场致发射机理及各种场致发射阴极材料最新进展,并简单讨论了场致发射材料国内外开发应用研究现状及差距.     

平栅型双层膜阴极的脉冲电压处理及场致发射性能研究

采用脉冲电压法对平栅双层膜阴极进行处理,进一步提高其场致发射性能。采用磁控溅射法在平行栅电极上溅射氧化铋薄膜和氧化锡薄膜,并对薄膜进行AFM分析,通过场致发射测试结果表明,经过脉冲电压法处理后的平行栅双层膜阴极的发射性能,如亮度、均匀度等有了很大的提高,阳压为3 000 V,栅压为190 V,其腔体亮度可达462 cd/m2。平行栅双层膜阴极的脉冲电压处理可以有效改善阴极的场发射性能,为改善SED阴极结构及材料提供了一条有效的实验方法。     

铝基定向碳纳米管复合膜的场发射性能研究

研究了铝基定向碳纳米管复合膜的场发射性能,获得了开启场强为1.15V/μm、最大发射电流密度为1.25mA/cm2的铝基定向碳纳米管薄膜.F-N曲线呈线性关系证明电子发射确为场致发射.     

氧化锡薄膜场致发射研究

利用直流磁控反应溅射法,制备氧化锡薄膜,利用扫描电镜等方法对氧化锡薄膜微观结构进行分析。在低真空下,对不同厚度的氧化锡薄膜进行场致发射测试,结果显示,在氧化锡薄膜厚度为60nm时,场致发射性能最佳,当电流密度为10μA/m2时,开启电压为4.5 V/μm,阴阳两极电场为7 V/μm时,有较佳的场发射密度,同时发光亮度达到2180 cd/m2,结果表明,氧化锡薄膜在场发射平板显示及真空电子器件方面具有较好的应用潜力。     

Some aspects of pulsed laser deposited nanocrystalline LaB(6) film: atomic force microscopy, constant force current imaging and field emission investigations

Nanocrystalline lanthanum hexaboride (LaB(6)) films have been deposited on molybdenum foil by the pulsed laser deposition (PLD) technique. The as-deposited films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The XRD pattern shows the cubic crystallinity of the LaB(6) film. The AFM studies reveal that the conical shaped LaB(6) nanostructures have height 60?nm, base 800?nm, and a typical radius of curvature ～20?nm. A comparison of force and in situ current imaging AFM studies reveals that current contrast does not originate from the surface topography of the LaB(6) film. Field emission studies have been performed in the planar diode configuration. A current density of 4.4 × 10(-2)?A?cm(-2) is drawn from the actual emitting area. The Fowler-Nordheim plot is found to be linear, in accordance with the quantum mechanical tunneling phenomenon. The field enhancement factor is estimated to be 3585, indicating that the field emission is from LaB(6) nanocrystallites present on the emitter surface, as confirmed by the AFM. The emission current-time plots show current stability to the extent of 5% fluctuation about the average current over a period of 3?h.     

Field Emission Characteristics of Conducting Polymer Films Conditioned by Electric Discharge

A pure conducting polymer （PANI-CSA） film conditioned by an electric discharge was tentatively utilized as an cathode for emitting electrons under electric fields. The emission of electrons was observed using a phosphor （ZnO：Zn） screen excited by electrons from the conditioned film. The film morphology was investigated using a scanning electron microscope and it was found that undulate whisker-like sites formed on the surface. The emission was presumably due to the undulate whisker-like sites. The field enhancement factor was estimated to be as high as 1150. The electron emitting process of the PANI-CSA film conditioned by electric discharge was also discussed.     

Field electron emitter based on a cesium-gold compound film

The formation and transformation of local emission centers during field electron emission from a cesium-gold (CsAu) compound film on a tungsten point emitter has been studied. Stable electron emission from one center reaches a current density of ～10⁸ A/cm². The properties of emission centers change during the take-off of large electron currents and on heating of the emitter. The experimental data are interpreted assuming that the CsAu compound is decomposed by a narrow beam of current passing through the film, with the formation of a several-nanometer-thick gold column and the reverse process of CsAu compound recovery at the column boundaries due to the diffusion supply of cesium.     

Field emission properties of pointed cathodes based on graphene films on SiC

Electrical properties of low-threshold field emission cathodes produced by growth nanocluster graphene films on the pointed surface of heavily doped n ⁺SiC by sublimation epitaxy have been considered. The quality of the graphene coating has been assessed based on the morphological studies and Raman spectroscopy. Using the volt–ampere characteristics the work function from a pointed cathode with graphene coating was calculated (～ 0.76 eV). Such a low value of the work function is explained on the assumptions that the graphene film has the nanocluster nature and the sources of the field emission are graphene nanoclusters.     

“离位”增韧技术在碳纤维/RTM聚酰亚胺复合材料中的应用

研究了“离位”增韧对RTM聚酰亚胺（PI-9731）树脂基复合材料力学性能的影响。结果表明: 当增韧剂的质量分数为15%时, 经粉末法和薄膜法“离位”增韧G827／PI-9731复合材料的室温层间剪切强度从增韧前的97.9MPa分别提高到108MPa和110MPa, 高温（288℃）层间剪切强度变化不大。G827／PI-9731复合材料经粉末法“离位”增韧后, Ⅰ型断裂能释放率从增韧前的310J/m2提高到410J/m2, Ⅱ型断裂能释放率从增韧前的590J/m2提高到939J/m2。而经过薄膜法“离位”增韧后, 其复合材料的Ⅰ型断裂能释放率提高到459J/m2, Ⅱ型断裂能释放率提高到1100J/m2。经电镜分析表明, 由于热塑性聚酰亚胺的引入, 在复合材料层间区域形成热固/热塑相反转结构, 在裂纹扩展的过程中, 包覆热塑性聚酰亚胺的PI-9731粒子发生明显取向和变形, 从而提高韧性。      

Imaging buried organic islands by spatially resolved ballistic electron emission spectroscopy

The well-known Au/n-Si(111) Schottky interface is modified by a discontinuous pentacene film (～1.5?nm thick) and studied using spatially resolved ballistic electron emission spectroscopy (BEES). The pentacene film introduced subtle changes to the interface which cannot be definitively detected by current-voltage measurements or a standard BEES analysis of the barrier height. In contrast, analyzing the BEES results in a dual-parameter (transmission attenuation and barrier height) space allows the effect of the pentacene film on the Au/n-Si(111) interface to be clearly demonstrated. We found that the pentacene film behaves like a tunneling barrier and increases the distribution of local barrier heights with a tendency toward lower values. Our results highlight the potential of the dual-parameter BEES analysis for understanding local interface modification by molecules.     

高场发射性能碳纳米管薄膜的沉积与表征

利用电泳法将碳纳米管（CNTs）沉积在表面镀覆了50～150 nm Ti薄膜的Si基底表面,900℃真空退火后形成了具有良好场发射性能的Ti-CNTs薄膜阴极.利用X射线衍射和扫描电子显微镜对制备的Ti-CNTs薄膜进行了表征.结果表明,高温退火过程中,CNTs的C原子和基底表面的Ti原子发生化学反应,在CNTs与基底之间形成了导电性钛碳化物,明显改善了CNTs与基底之间的电导性和附着力等界面接触性能;与Si基底表面直接电泳沉积的CNTs薄膜相比,制备的Ti-CNTs薄膜的开启电场从1.31 V/μm降低到1.19 V/μm;当电场强度为2.50 V/μm时,Ti-CNTs薄膜的场发射电流密度可达13.91 mA/cm^2;制备的Ti-CNTs薄膜显示出改善的发射稳定性.     

商合杭铁路芜湖长江大桥主桥3号墩水下基坑爆破施工技术

针对商合杭铁路芜湖长江大桥水下基坑爆破施工中爆破区域地质条件多变、航道情况复杂、流域水位高、水流急等众多施工技术难题,通过现场实验和专家评估,决定采用水下深孔微差爆破技术。运用钢管排架方案下放套管,基坑底面标高需超深0.4 m,爆区内炮孔采用梅花形布设,纵横向间排距均为2.0 m;炮孔使用水胶炸药装药,设计炸药单耗2.0~2.1 kg/m3,单孔药量48~88 kg,并对装药结构进行抗压处理;并通过六缆定位法,实现钻爆船、清渣船与运渣船协同作业。     

多孔硅的微结构及其冷阴极的电子发射特性研究

采用电化学腐蚀法在n型单晶Si基底上制备多孔硅(PS)膜,利用场发射扫描电子显微镜(FE-SEM)分析其微结构特征,研究了硅基底材料、腐蚀电流密度和腐蚀时间等制备条件和工艺参数对PS微结构的影响。实验结果表明,轻掺杂n型Si基底上形成的PS膜(n--PS)中的孔较深且孔径较大,而重掺杂n型Si基底上的PS膜(n+-PS)中的孔分布较为密集,而且呈多分枝结构;腐蚀电流密度相同时,PS的膜厚和腐蚀时间成正比,而在较高的腐蚀电流密度下制备得到的PS膜在结构上更为疏松。制作了基于n+型硅基底的PS阴极,此阴极的阈值电压约为14 V,高于该电压后发射电流随着二极管电压提高而呈指数性增加趋势,而且发射电流对环境气压不敏感,即使在0.1 Pa的低真空中也没有明显的衰减。