Gas Pressure Sintering of Silicon Nitride Powder Coated with Al2O3 and TiO2

Gas pressure sintering kinetics of silicon nitride powder coated with 10 wt% (9:1) Al₂O₃ and TiO₂ have been studied at 1850°C with a pressure schedule of 0.3 MPa in the first stage and 1 MPa in the second stage. The rates have been analyzed with a liquid-phase sintering model. Diffusion-controlled intermediate-stage kinetics have been observed. The role of second-step pressurization with nitrogen and argon has been determined by monitoring the kinetics. Pressurization at an earlier stage (∼90% relative density) reduces the densification rate but produces a denser material at the final stage. Although final density is greater, a porous surface layer forms on samples sintered with argon pressurization at the second stage. No such porous layer is formed in the case of pressurization with nitrogen. The mechanism of the intermediate-stage kinetics has been discussed with respect to the nature of the product analyzed by XRD after sintering.     

Phase Composition, Oxygen Content, and Thermal Conductivity of AIN(Y2O3) Ceramics

An indirect method to determine the oxygen dissolved in AIN is devised for AIN(Y₂O₃) ceramics and then related to thermal conductivity. Dissolved oxygen is determined by first constructing the AIN-rich corner of the AIN—Y₂O₃—Al₂O₃ phase diagram (isothermal section). This is achieved by (1) measuring the total oxygen content and subtracting from it the oxygen in the Y₂O₃, resulting in a virtual alumina content; (2) placing the sample composition on the diagram; (3) determining the phases present by XRD for each sample; and (4) drawing phase boundaries which best agree with the phases present. The intersection of these tie lines through the sample location with the AIN—Al₂O₃ axis then gives the particular Al₂O₃ oxygen content dissolved in the AIN lattice. For the system AIN—Y₂O₃—Al₂O₃, it is shown that it is indeed this fraction of the total oxygen content that has a decisive limiting influence on thermal conductivity of dense, polyphase AIN ceramics.     

Effects of Y2O3 and ZrO2 on the Densification of Si3N4-Zr(Y)O2 Composites

The effects of ZrO₂ and Y₂O₃ on the densification of hotpressed Si₃N₄-Zr(Y)O₂ composites have been studied. High density could not be obtained by the addition of pure or 3-mol%-Y₂O₃-doped ZrO₂ in this composite; however, nearly full density (>97%) could be obtained in Si₃N₄ using 6- and 8-mol%-Y₂O₃-doped ZrO₂. It is concluded that Y₂O₃ diffusing out from the added Zr(Y)O₂ promoted the densification and that ZrO₂ also had some role in the formation of an oxynitride glass.     

Atomic Resolution Transmission Electron Microscopy of the Intergranular Structure of a Y2O3-Containing Silicon Nitride Ceramic

High-resolution transmission electron microscopy (HRTEM) employing focus-variation phase-reconstruction methods is used to image the atomic structure of grain boundaries in a silicon nitride ceramic at subangstrom resolution. Complementary energy-dispersive X-ray emission spectroscopy experiments revealed the presence of yttrium ions segregated to the 0.5–0.7-nm thin amorphous boundary layers that separate individual grains. Our objective here is probing if yttrium ions attach to the prismatic planes of the Si₃N₄ at the interface toward the amorphous layer, using Scherzer and phase-reconstruction imaging, as well as image simulation. Crystal structure images of grain boundaries in thin sample (<100 Å) areas do not reveal the attachment of yttrium at these positions, although lattice images from thicker areas do suggest the presence of yttrium at these sites. It is concluded that most of the yttrium atoms are located in the amorphous phase and only a few atoms may attach to the terminating prism plane. In this case, the line concentrations of such yttrium in the latter location are estimated to be at most one yttrium atom every 17 Å.     

Influence of the Y2O3 Content and Temperature on the Mechanical Properties of Melt-Grown Al2O3–ZrO2 Eutectics

The effect of Y₂O₃ content on the flexure strength of melt-grown Al₂O₃–ZrO₂ eutectics was studied in a temperature range of 25°–1427°C. The processing conditions were carefully controlled to obtain a constant microstructure independent of Y₂O₃ content. The rod microstructure was made up of alternating bands of fine and coarse dispersions of irregular ZrO₂ platelets oriented along the growth axis and embedded in the continuous Al₂O₃ matrix. The highest flexure strength at ambient temperature was found in the material with 3 mol% Y₂O₃ in relation to ZrO₂(Y₂O₃). Higher Y₂O₃ content did not substantially modify the mechanical response; however, materials with 0.5 mol% presented a significant degradation in the flexure strength because of the presence of large defects. They were nucleated at the Al₂O₃–ZrO₂ interface during the martensitic transformation of ZrO₂ on cooling and propagated into the Al₂O₃ matrix driven by the tensile residual stresses generated by the transformation. The material with 3 mol% Y₂O₃ retained 80% of the flexure strength at 1427°C, whereas the mechanical properties of the eutectic with 0.5 mol% Y₂O₃ dropped rapidly with temperature as a result of extensive microcracking.     

Effect of Dynamic Microstructural Change on Deformation Behavior in Liquid-Phase-Sintered Silicon Carbide with Al2O3–Y2O3–CaO Additions

Nanocrystalline β-SiC with additions of 7 wt% Al₂O₃, 2 wt% Y₂O₃, and 1 wt% CaO was subjected to tensile deformation to study its microstructural behavior under the dynamic process. The liquid-phase-sintered body had a relative density of >97% and an average grain size of 170 nm. Tension tests were conducted at initial strain rates ranging from 2 × 10⁻⁵ to 5 × 10⁻⁴ s⁻¹, in the temperature range 1973–2023 K, in both argon and N₂ atmospheres. Although grain-boundary liquids formed by the additions vaporized concurrently with the decomposition of SiC and extensive grain growth, the maximum tensile elongation of 48% was achieved in argon. Annealing experiments under the same conditions revealed that vaporization and grain growth were both dependent on experimental time. Therefore, high strain rates suffered less from the hardening effect when cavitation damage was more severe. Testing in an N₂ atmosphere brought about crystallization of the grain-boundary phase and prevented severe vaporization; however, fracture occurred at only 8% elongation. Grain-boundary sliding was still the dominant mechanism for deformation.     

High-Temperature Phase Relations in the System Y2O3-Ta2O5

The phase relations for the system y₂o₃–Ta₂o₅ in the composition range 50 to 100 mol% Y₂O₃ have been studied by solid-state reactions at 1350°, 1500°, or 17000C and by thermal analyses up to the melting temperatures. Weberite-type orthorhombic phases (W2 phase, space group C222₁), fluorite-type cubic phases (F phase, space group Fm3m )and another orthorhombic phase (O phase, space group Cmmm )are found in the system. The W2 phase forms in 75 mol% Y₂O₃ under 17000C and O phase in 70 mol% Y₂O₃ up to 1700°C These phases seem to melt incongruently. The F phase forms in about 80 mol% Y₂O₃ and melts congruently at 2454° 3°C. Two eutectic points seem to exist at about 2220°C 90 mol% Y²O₃, and at about 1990°C, 62 mol% Y₂O₃. A Phase diagram including the above three phases were not identified with each other.     

Effect of MgO Addition on the Microstructure Development of 3 mol% Y2O3—ZrO2

MgO addition to 3 mol% Y₂O₃–ZrO₂ resulted in enhanced densification at 1350°C by a liquid-phase sintering mechanism. This liquid phase resulted from reaction of MgO with trace impurities of CaO and SiO₂ in the starting powder. The bimodal grain structure thus obtained was characterized by large cubic ZrO₂ grains with tetragonal ZrO₂ precipitates, which were surrounded by either small tetragonal grains or monoclinic grains, depending on the heat-treatment schedule.     

Hot-Pressed Silicon Nitride with Lu2O3 Additives: Oxidation and Its Effect on Strength

The oxidation behavior and effect of oxidation on room-temperature flexural strength were investigated for hot-pressed Si₃N₄ ceramics, with 3.33 and 12.51 wt% Lu₂O₃ additives, exposed to air at 1400° and 1500°C for up to 200 h. Parabolic oxidation behavior was observed for both compositions. The oxidation products consisted of Lu₂Si₂O₇ and SiO₂. The Lu₂Si₂O₇ grew out of the surface silicate in preferred orientations. The morphology of oxidized surfaces was dependent on the amount of additive; Lu₂Si₂O₇ grains in the 3.33 wt% composition appeared partially in a needlelike type, compared with a more equiaxed type exhibited in the 12.51 wt% case. The high resistance to oxidation shown for both compositions was attributed to the extensive amounts of crystalline, refractory secondary phases formed during the sintering process. Moreover, after 200 h of oxidation at 1400° and 1500°C, the strength retention displayed by the two compositions was 93%–95% and 85%–87%, respectively. The strength decrease was associated with the formation of new defects at the interface between the oxide layer and the Si₃N₄ bulk.     

High-Temperature Neutron Diffraction of the AlN–Al2O3–Y2O3 System

The importance of aluminum nitride (AlN) stems from its application in microelectronics as a substrate material due to high thermal conductivity, high electrical resistance, mechanical strength and hardness, thermal durability, and chemical stability. Yttria (Y₂O₃) is the best additive for AlN sintering. AlN densifies by a liquid-phase mechanism, where the surface oxide, Al₂O₃, reacts with Y₂O₃ to form an Y-Al-O-N liquid that promotes particle rearrangement and densification. Construction of the phase relations in this multicomponent system is essential for optimizing the properties of AlN. The ternary phase diagram of the AlN–Al₂O₃–Y₂O₃ was developed by Gibbs energy minimization using interpolation procedures based on modeling the binary subsystems. This paper aims at testing the resultant understanding experimentally at selected compositions using in situ high-temperature neutron diffractometry. These experimental results agree with the thermodynamic calculations of AlN–Al₂O₃–Y₂O₃. The ternary phase diagram has been constructed for the first time in this work. High-temperature neutron diffractometry has permitted real time measurement of the reactions involved in this ternary system, especially to determine the temperature range for each reaction, which would have been difficult to establish by other means.     

Eutectic Composition in the Pseudobinary of Y4Al2O9 and Y2O3

The eutectic composition between Y₄Al₂O₉ and Y₂O₃ was determined using electron probe microanalysis (EPMA) on directionally solidified specimens with hypo- and hypereutectic compositions. The microstructures of the specimens as a function of composition differ considerably with small deviation from the eutectic composition (70.5 mol% Y₂O₃ and 29.5 mol% Al₂O₃). Based on the current results and other published data, the pseudobinary system between Al₂O₃ and Y₂O₃ is revised.     

Compressive Creep and Creep Failure of 8Y2O3/3Al2O3-Doped Hot-Pressed Silicon Nitride

The compressive creep properties of hot-pressed Si₃N₄8Y₂O₃—3Al₂O₃ (wt%) have been investigated in the temperature range of 1543–1603 K in air. The stress exponent, n , of the power creep law was determined to be 1.5, and the activation energy was determined to be 650 kJ/mol. Transmission electron microscopy observations showed that grain-boundary sliding occurred with cavitation formation in the grain-boundary glassy phase. The quasi-steady-state creep results were consistent with that of the diffusion-controlled solution—diffusion—precipitation creep mechanism, and the distinguished failure mechanism was cavitation creep damage controlled by the viscosity of the boundary glassy phase. The compressive creep failure time, obtained at 1573 K, in the stress range of 175–300 MPa, followed the MonkmanGrant relation, indicating that cavity growth was mainly controlled by the creep response of the material.     

Sintering and Properties of β'-Sialon with a Nitrogen-Rich Y2O3 Sintering Aid

The synthesis of dense sintered sialon with external additives selected from the system Y₂O₃–AIN–SiO₂ is reported. The highest density (3.21 g/cm³) was achieved at 1750°C at 90 min of sintering with 5 wt% additive. The degree of sialon substitution increased with the amount of liquid; the YSiO₂N crystalline phase formed concurrently. Strength degradation occurred above 1000°C. The fracture toughness of the material sintered with a lower amount of sintering aid remained relatively unchanged to 1200°C. The material with more additive exhibited decreased toughness above 1000°C.     

Phase Stability, Phase Transformation Kinetics, and Conductivity of Y2O3—Bi2O3 Solid Electrolytes Containing Aliovalent Dopants

Single-phase, cubic solid solutions of baseline composition 25% Y₂O₃—75% Bi₂O₃ with and without aliovalent dopants were fabricated by pressureless sintering of powder compacts. CaO, SrO, ZrO₂, or ThO₂ was added as an aliovalent dopant. Sintered samples were annealed between 600° and 650°C for up to 4000 h. Samples doped with ZrO₂ or ThO₂ remained cubic, depending upon the dopant concentration, even after long-term annealing. By contrast, undoped, CaO-doped, and SrO-doped samples transformed to the low-temperature, rhombohedral phase within ∼ 200 h. Conductivity measurements showed no degradation of conductivity in samples that did not undergo the transformation. In samples that underwent the transformation, a substantial decrease in conductivity occurred. The enhanced stability of the ZrO₂- and ThO₂-doped samples is rationalized on the basis of suppressed interdiffusion on the cation sublattice.     

Microstructure and Densification of Pressureless-Sintered Al2O3/Si3N4-Whisker Composites

Composite densification was studied by performing slip casting and sintering experiments on an Al₂O₃ matrix and Si₃N₄ whisker system. Even though all the slip-cast powder compacts exhibited high green densities (up to 70% of the theoretical) and narrow pore-size distribution (pore radius around 15 to 30 nm), significant differential densification on a microscopic scale was found due to the existence of local whisker agglomeration. The inhomogeneous whisker distribution resulted in a binary mixture of large and small pores in the sintered composites, in which whisker-associated flaws remained stable even after prolonged sintering. The sintered microstructures showed that the spatial distribution as well as the volume fraction of the Si₃N₄ affect composite densification. Inhomogeneous whisker distribution dominated the complete densification of the composites.     

Ta2O5/Nb2O5 and Y2O3 Co-doped Zirconias for Thermal Barrier Coatings

Zirconia doped with 3.2–4.2 mol% (6–8 wt%) yttria (3–4YSZ) is currently the material of choice for thermal barrier coating topcoats. The present study examines the ZrO₂-Y₂O₃-Ta₂O₅/Nb₂O₅ systems for potential alternative chemistries that would overcome the limitations of the 3–4YSZ. A rationale for choosing specific compositions based on the effect of defect chemistry on the thermal conductivity and phase stability in zirconia-based systems is presented. The results show that it is possible to produce stable (for up to 200 h at 1000°–1500°C), single (tetragonal) or dual (tetragonal + cubic) phase chemistries that have thermal conductivity that is as low (1.8–2.8W/m K) as the 3–4YSZ, a wide range of elastic moduli (150–232 GPa), and a similar mean coefficient of thermal expansion at 1000°C. The chemistries can be plasma sprayed without change in composition or deleterious effects to phase stability. Preliminary burner rig testing results on one of the compositions are also presented.     

Microstructure of Y2O3 Fluxed Hot-Pressed Silicon Nitride

Detailed microstructural analysis of a 10 mol% Y₂O₃ fluxed hot-pressed silicon nitride reveals that, in addition to the yttrium-silicon oxynitride phase located at the multiple Si₃N₄ grain junctions, there is a thin boundary phase 10 to 80 Å wide separating the silicon nitride and the oxynitride grains. Also, X-ray microanalysis from regions as small as 200 Å across demonstrates that the yttrium-silicon oxynitride, Y₂Si(Si₂O₃N₄), phase can accommodate appreciable quantities of Ti, W, Fe, Ni, Co, Ca, Mg, Al, and Zn in solid solution. This finding, together with observations of highly prismatic Si₃N₄ grains enveloped by Y₂Si(Si₂O₃N₄), suggests that densification occurred by a liquid-phase "solution-reprecipitation" process.     

Superplasticity of Liquid-Phase-Sintered β-SiC with Al2O3–Y2O3–AlN Additions in an N2 Atmosphere

Compression and tension tests were performed on liquid-phase-sintered β-SiC fabricated by hot-pressing, using ultrafine powders, at 1973–2048 K in an N₂ atmosphere. Amorphous phases were observed at the grain boundaries and at multigrain junctions in the as-sintered material. Strain hardening was observed under all experimental conditions. Stress exponents in the compression test were 1.7–2.1 in the temperature range 1973–2023 K. A maximum tensile elongation of 170% was achieved at the initial strain rate of 2 × 10⁻⁵ s⁻¹ at 2048 K.     

Phase Relations in the System Al2O3–B2O3–Nd2O3

The phase relations at a temperature below "subsolidus" in the system Al₂O₃–B₂O₃–Nd₂O₃ are reported. Specimens were prepared from various compositions of Al₂O₃, B₂O₃, and Nd₂O₃ of purity 99.5%, 99.99%, and 99.9%, respectively, and fired at 1100°C. There are six binary compounds and one ternary compound in this system. The ternary compound, NdAl₃(BO₃)₄ (NAB), has a phase transition at 950°C ± 15°C. The high-temperature form of NAB has a second harmonic generation (SHG) efficiency of KH₂PO₄ (KDP) of the order of magnitude of the form which has been used as a good self-activated laser material, and the low-temperature form of NAB has no SHG efficiency.     

Influence of Dopant Concentration on Creep Properties of Nd2O3-Doped Alumina

The microstructural features and tensile creep behavior of Al₂O₃ doped with Nd₂O₃ at levels ranging from 100 to 1000 ppm (Nd:Al atomic ratio) were systematically investigated. Compositional mapping, using both high-resolution scanning transmission electron microscopy and secondary ion mass spectroscopy revealed that, for all of the compositions studied, the Nd³⁺ ions were strongly segregated to the Al₂O₃ grain boundaries. Microstructural observations revealed that the solubility of Nd₂O₃ was between 100 and 350 ppm. Tensile creep tests were conducted over a range of temperatures (1200°–1350°C) and stresses (20–75 MPa). Both the stress and grain-size exponents were analyzed. In selected experiments, controlled grain-growth anneals were used to enable creep testing of samples of the same average grain size but different neodymium concentrations. Independent of dopant level, the neodymium additions decreased the creep rate by 2–3 orders of magnitude, compared with that of undoped Al₂O₃. The value of the apparent creep activation energy increased with increased dopant concentration and then saturated at dopant levels exceeding the solubility limit. Overall, the results of the present study were consistent with a creep-inhibition mechanism whereby oversized segregant ions reduce grain-boundary diffusivity by a site-blocking mechanism.