宽范围快锁定CMOS电荷泵锁相环的设计

通过研究分析电荷泵锁相环的电路结构,给出了一种应用于超高速ADC的电荷泵锁相环的设计方法。该方法采用动态PFD（鉴频鉴相器）结构和CSA（Current Steer Amplifier）构架的压控振荡器（VCO）结构。在基于3．3V、0．35μm标准工艺在Cadence环境下的仿真结果表明,其VCO的输出频率范围为35MHz～1．3GHz,电荷泵锁相环的功耗为32．68mw,锁定时间仅为2．2μs。     

一种高电源噪声抑制宽线性范围CMOS压控振荡器设计

给出了一种高电源噪声抑制、高线性范围CMOS压控振荡器的结构：电压调节器用于隔离外部电源以抑制高频与低频噪声．并提供稳定的内部电压给振荡器；振荡器部分则使用双环结构，同时采用改进的V-I电路，提高了VCO电压-频率转换特性的线性范围。在TSMC0．25μmN阱CMOSS工艺参数下仿真表明，VCO的输出频率范围为0．081GHz至1．53GHz．控制电压调节范围81％，线性度6．9％。当输出频率为1GHz时，电源电压变化1V引起的输出周期变化为3ps。     

一种固定下降沿的高精度时钟占空比调整电路

提出了一种基于连续时间积分器的高精度占空比调整电路，利用积分电压控制倒相器上升沿延迟，并进一步通过触发器合成50％占空比时钟。电路采用CMOS0．35μ m2P4M混合电路工艺实现。后仿结果表明，该电路能将30％～70％占空比的输入时钟自动调整至50％±0．2％。电路结构简单，芯片面积约为0．18mm×0．12mm，仿真功耗仅为0．2～0．4mW。该调整方法本身受电路、工艺失配影响小，且调整过程中保持调整前后下降沿对齐，便于与锁相环或延迟锁相环结合，进一步在调整占空比的同时，改善输出时钟的其他性能。     

一种基于多输入单电子晶体管的比较器电路

基于多输入单电子晶体管(SET)的Ⅰ-Ⅴ特性和CMOS数字电路的设计思想,提出了一种由18个互补型SET和1个双栅极SET构成的1位比较器电路结构.该比较器优点为:利用一个双栅极SET的固有特性,使异或逻辑块得到了简化,减少了晶体管的数目;电压兼容性好,输入和输出高低电平都接近0.02 V和0 V;静态总功耗低(6.42 pW).仿真结果验证了电路的正确性.     

一种基于互补型单电子晶体管的全加器电路设计

基于单电子晶体管(SET)的I-V特性和CMOS数字电路的设计思想,提出了一种由28个互补型SKT构成的全加器电路结构。该全加器优点为：简化了“P—SET”逻辑块;通过选取一组参数使输入和输出高低电平都接近于0．02mV和0mV,电压兼容性好;延迟时间短,仅为0．24ns。SPICE宏模型仿真结果验证了它的正确性。     

PLL调频立体声接收机制作

锁相环(PLL)电路PLL(锁相环)电路的基本组成如图1。压控振荡器(VCO)是一种用电压控制振荡频率的电路。假定基准振荡器的频率为100kHz,若要构成一个700MHz 的PLL 路,VCO 的输出需经过分频系数 N=700的分频器。也得到一个100kHz 的信号,若两者完全相同,比较器输出的 VCO 的控制电压不变,就能得到稳定的70MHz 的输出。由于某种原因使频率发生变化,经比较器和 LPF 输出的电压产生高低变化,对 VCO 的振荡频率起到补偿作用,使振荡稳定。若频率增高,加在 VCO 上的电     

一种用于时钟产生的低功耗电荷泵锁相环设计

设计了一种用于时钟产生的电荷泵锁相环(CPPLL),其压控振荡器(VCO)采用了新颖的带电流补偿的电流减法器结构。采用Charted2.5V、0.25μmCMOS工艺,整个芯片的面积为300μm×400μm,VCO输出频率范围为55MHz～322MHz。整个电路功耗低,VCO输出频率为240MHz时,功耗为6mW。Hspice仿真结果表明,VCO输出时钟为96MHz时,峰峰值抖动为320ps。     

一种用于高速锁相环的新型CMOS电荷泵电路

提出了一种适用于高速锁相环电路的新型CMOS电荷泵电路。该电路利用正反馈电路提高电荷泵的转换速度，利用高摆幅镜像电流电路提高输出电压的摆动幅度，消除了电压跳变现象。电路设计和H-SPICE仿真基于BL 1．2μm工艺BSIM3、LEVEL=47的CMOS库，电源电压为2V，功耗为0．1mW。仿真结果表明，该电路可以很好地应用于高速锁相环电路。     

一种低抖动电荷泵锁相环频率合成器

设计一种低抖动电荷泵锁相环频率合成器,输出频率为400 MHz~1 GHz。电路采用电流型电荷泵自举结构消除电荷共享效应,同时实现可编程多种输出电流值。通过具体的频率范围来选择使用的VCO,获得更小的锁相环相位抖动。电路采用0.13μm 1.2 V CMOS工艺,芯片面积为0.6 mm×0.5 mm。Hsim后仿真结果显示当输出频率为1 GHz时,锁相环频率合成器的锁定时间为4.5μs,功耗为19.6 mW,最大周对周抖动为11 ps。     

用传输门VCO和动态PFD设计低功耗CMOS琐相环

锁相环（PLL）是VLSI系统的重要单元电路之一,为了实现高速低功耗的CMOS锁相环,用传输门VCO和动态反相器PFD电路设计CMOS锁相环。传输门结构VCO具有高速、低电压和低功耗的特性,而动态反相器PFD具有功耗低和面积小的特点。SPICE模拟表明,当电源电压为2．5V时,基于0．6μmCMOS工艺设计的CMOS锁相环电路,工作频率高达1000MHz,而功耗低于50mW。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.