共查询到20条相似文献,搜索用时 15 毫秒
1.
<正> High qualities of GaAs layers directly grown on Si substrates have been obtained by MBE. The residual stress in those MBE grown GaAs layers on 相似文献
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Abramkin D. S. Petrushkov M. O. Putyato M. A. Semyagin B. R. Emelyanov E. A. Preobrazhenskii V. V. Gutakovskii A. K. Shamirzaev T. S. 《Semiconductors》2019,53(9):1143-1147
Semiconductors - Molecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite... 相似文献
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研究了分子束外延GaAs/Si光致发光谱的激发强度和温度依赖关系。确定出2个本征发光峰,分别对应于导带至m_J=±3/2和m_J=±1/2价带的复合。这种价带的移动和分裂归因于由GaAs和Si的热膨胀系数不同所引起的GaAs层双轴张应力。还观测到4个非本征发光峰,分别为导带至m_J=±1/2碳受主态发光、可能与缺陷有关的发光以及可能由Mn和Cu受主杂质引起的发光。室温下将GaAs/Si和GaAs/GaAs材料的光反射谱进行比较,前者明显向低能移动约8meV,观测到3个特征谱结构,与光致发光结果相一致。 相似文献
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采用HFCVD技术,通过两步CVD生长法,以较低生长温度,在Si(111)和Si(100)衬底上同时外延生长3C-SiC获得成功.生长源气为CH4+SiH4+H2混合气体,热丝温度约为2000℃,碳化和生长时基座温度分别为950℃和920℃,用X射线衍射(XRD)和X射线光电子能谱(XPS)等分析手段研究了外延层的晶体结构、组分及化学键能随深度的变化.XRD结果显示出3C-SiC薄层的外延生长特征,XPS深度剖面图谱表明薄层中的组分主要为Si和C,且Si/C原子比符合SiC的理想化学计量比,其三维能谱曲线进一步证明了外延层中Si2p和与Cls成键形成具有闪锌矿结构的3C-SiC. 相似文献
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Si衬底上外延3C-SiC薄层的XPS分析 总被引:8,自引:3,他引:8
采用 HFCVD技术 ,通过两步 CVD生长法 ,以较低生长温度 ,在 Si( 1 1 1 )和 Si( 1 0 0 )衬底上同时外延生长 3C- Si C获得成功 .生长源气为 CH4 + Si H4 + H2 混合气体 ,热丝温度约为2 0 0 0℃ ,碳化和生长时基座温度分别为 950℃和 92 0℃ ,用 X射线衍射 ( XRD)和 X射线光电子能谱 ( XPS)等分析手段研究了外延层的晶体结构、组分及化学键能随深度的变化 .XRD结果显示出 3C- Si C薄层的外延生长特征 ,XPS深度剖面图谱表明薄层中的组分主要为 Si和 C,且 Si/C原子比符合 Si C的理想化学计量比 ,其三维能谱曲线进一步证明了外延层中 Si2 p和与 Cls成键形成 相似文献
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Galiev G. B. Klimov E. A. Klochkov A. N. Kopylov V. B. Pushkarev S. S. 《Semiconductors》2019,53(2):246-254
Semiconductors - The results of studying semiconductor structures proposed for the first time and grown, which combine the properties of LT-GaAs with p-type conductivity upon doping with Si, are... 相似文献
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K. Yasuda M. Niraula S. Namba T. Kondo S. Muramatsu H. Yamashita Y. Wajima Y. Agata 《Journal of Electronic Materials》2013,42(11):3125-3128
Annealing conditions of CdTe layers grown on Si substrates by metalorganic vapor-phase epitaxy were studied. Typically, 3-μm-thick n-type (211) CdTe layers were annealed for 60 s in flowing hydrogen at atmospheric pressure by covering their surfaces with bulk CdTe wafers. At annealing temperatures above 700°C, improvement of crystal quality was confirmed from full-width at half-maximum values of double-crystal rocking-curve measurements and x-ray diffraction measurements. Photoluminescence measurements revealed no deterioration of electrical properties in the annealed n-CdTe layers. Furthermore, annealing at 900°C improved the performance of radiation detectors with structure of p-like CdTe/n-CdTe/n +-Si substrate. 相似文献
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K. Yasuda M. Niraula H. Oka T. Yoneyama K. Matsumoto H. Nakashima T. Nakanishi D. Katoh Y. Agata 《Journal of Electronic Materials》2010,39(7):1118-1123
Electrical properties of halogen-doped CdTe layers grown on Si substrates using iodine and chlorine dopants are presented.
No change in electrical properties of the layers was observed with chlorine as a dopant. However, doping with iodine resulted
in highly conductive n-type layers or highly resistive p-type layers depending upon the growth conditions, even though a similar amount of dopant was introduced into the growth chamber.
Layers grown at 560°C, with a vapor-phase Te/Cd precursor ratio of 3.0, were p-type. The resistivity of the layers remained unchanged for low dopant supply rates, but increased abruptly when the dopant
supply rate was increased beyond a certain value. On the other hand, layers grown at 325°C with Te/Cd ratios from 0.1 to 0.25
were n-type. A maximum free electron concentration of 1.3 × 1017 cm−3 was obtained at room temperature. The types and conductivities of the grown layers were strongly dependent on the growth
conditions. 相似文献
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Patrik Ščajev Jawad Hassan Kęstutis Jarašiūnas Masashi Kato Anne Henry J. Peder Bergman 《Journal of Electronic Materials》2011,40(4):394-399
Time-resolved nonlinear optical techniques were applied to determine the electronic parameters of cubic silicon carbide layers.
Carrier lifetime, τ, and mobility, μ, were measured in a free-standing wafer grown on undulant Si and an epitaxial layer grown by hot-wall chemical vapor deposition
(CVD) on a nominally on-axis 4H-SiC substrate. Nonequilibrium carrier dynamics was monitored in the 80 K to 800 K range by
using a picosecond free carrier grating and free carrier absorption techniques. Correlation of τ(T) and μ
a(T) dependencies was explained by the strong contribution of diffusion-limited recombination on extended defects in the layers.
A lower defect density in the epitaxial layer on 4H-SiC was confirmed by a carrier lifetime of 100 ns, being ~4 times longer
than that in free-standing 3C. 相似文献
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Kukushkin S. A. Mizerov A. M. Grashchenko A. S. Osipov A. V. Nikitina E. V. Timoshnev S. N. Bouravlev A. D. Sobolev M. S. 《Semiconductors》2019,53(2):180-187
Semiconductors - The photoelectric properties of GaN/SiC/Si(111) and GaN/Si(111) heterostructures grown by plasma-assisted molecular-beam epitaxy under the same growth conditions on identical... 相似文献
14.
徐至中 《固体电子学研究与进展》1995,(3)
采用紧束缚方法计算了生长在GexSi1-x(001)衬底上的应变GaAs层带间光跃迁的振子强度以及三次非线性光极化率,讨论了振子强度及三次非线性光极化率随衬底合金组分x的变化关系。计算结果表明:对所有x值,及随x的变小而变小;及随x的变小而变大。对n型GaAs/GexSi1-x(001),应变使和变小;对p型GaAs/GexSi1-x(001),应变使变大,但使变小。 相似文献
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本文报道了空间差分光调制反射光谱,指出了它与常规光调制反射谱的区别,与常规光调制反射光谱相比较,它具有更好的信噪比和灵敏度。利用该光谱方法对GaAs/AlGaAs量子阱的实验测量结果表明,空间差分光调制反射光谱具有丰富的光谱结构。 相似文献
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Seredin P. V. Goloshchapov D. L. Khudyakov Yu. Yu. Arsentyev I. N. Nikolaev D. N. Pikhtin N. A. Slipchenko S. O. Leiste Harald 《Semiconductors》2021,55(1):122-131
Semiconductors - The purpose of the study is to investigate the effect of a new type of compliant substrate based on an AlGaAs superstructure layer (SL) and a protoporous Si (proto-Si) layer formed... 相似文献
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对使用 MOCVD方法在蓝宝石衬底上生长的典型 In Ga N样品进行了光致发光 (PL)、霍耳 (Hall)及扫描电镜 (SEM)测量 .结果表明 :适当的生长温度 (75 0℃ )提高了样品中 In的含量和 PL 强度。当 / 族比率大约 5 0 0 0时 ,75 0℃生长的样品背景载流子浓度约为 2 .2 1× 10 1 8cm- 3,In含量约为 11.5 4% .其室温 394nm的带边峰 ,半高宽约为 116 me V,束缚能约为 32 .4m e V,可能与束缚激子发光相关 .该样品禁带宽度随温度变化的温度系数 α (d E/ d T)约为 0 .5 6× 10 - 3e V/ K.较高温度 (80 0℃和 90 0℃ )生长的样品 In含量较低 ,PL 强度较弱 ,且在样 相似文献
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对使用MOCVD方法在蓝宝石衬底上生长的典型InGaN样品进行了光致发光(PL)、霍耳(Hall)及扫描电镜(SEM)测量.结果表明:适当的生长温度(750℃)提高了样品中In的含量和PL强度。当Ⅴ/Ⅲ族比率大约5000时,750℃生长的样品背景载流子浓度约为2.21×1018cm-3,In含量约为11.54%.其室温394nm的带边峰,半高宽约为116meV,束缚能约为32.4meV,可能与束缚激子发光相关.该样品禁带宽度随温度变化的温度系数α(dE/dT)约为0.56×10-3eV/K.较高温度(800℃和900℃)生长的样品In含量较低,PL强度较弱,且在样品表面析出了金属In滴. 相似文献
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Abramkin D. S. Petrushkov M. O. Putyato M. A. Semyagin B. R. Shamirzaev T. S. 《Semiconductors》2018,52(11):1484-1490
Semiconductors - Heterostructures with InAs/AlAs quantum dots are grown on GaAs/Si hybrid substrates. The experimentally observed low-temperature (5–80 K) photoluminescence spectra of... 相似文献
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报道了一种利用直径为286nm的单分散SiO2胶体颗粒制备胶体晶体的方法。乙醇悬浮中的SiO2颗粒通过毛细作用力在垂直插入其中的GaAs衬底表面自组装成胶体晶体。扫描电子显微镜(SEM)和紫外-可见分光光度计对胶体晶体的形貌和光学特性进行了表征。结果显示,所得到的胶体晶体膜具有较好的三维有序结构。分析了退火对样品光子带隙的影响。 相似文献