Interfacial reaction and joint reliability of fine-pitch flip-chip solder bump using stencil printing method

This study was focused on the formation and reliability evaluation of solder joints with different diameters and pitches for flip chip applications. We investigated the interfacial reaction and shear strength between two different solders (Sn-37Pb and Sn-3.0Ag-0.5Cu, in wt.%) and ENIG (Electroless Nickel Immersion Gold) UBM (Under Bump Metallurgy) during multiple reflow. Firstly, we formed the flip chip solder bumps on the Ti/Cu/ENIG metallized Si wafer using a stencil printing method. After reflow, the average solder bump diameters were about 130, 160 and 190 μm, respectively. After multiple reflows, Ni₃Sn₄ intermetallic compound (IMC) layer formed at the Sn-37Pb solder/ENIG UBM interface. On the other hand, in the case of Sn-3.0Ag-0.5Cu solder, (Cu,Ni)₆Sn₅ and (Ni,Cu)₃Sn₄ IMCs were formed at the interface. The shear force of the Pb-free Sn-3.0Ag-0.5Cu flip chip solder bump was higher than that of the conventional Sn-37Pb flip chip solder bump.     

Interfacial reaction and solder joint reliability of Pb-free solders in lead frame chip scale packages (LF-CSP)

Chip scale packages (CSP) have essential solder joint quality problems, and a board level reliability is a key issue in design and development of the CSP type packages. There has been an effort to eliminate Pb from solder due to its toxicology. To evaluate the various solder balls in CSP package applications, Pb-free Sn-Ag-X (X=In, Cu, Bi) and Sn-9Zn-1Bi-5In solder balls were characterized by melting behavior, phases, interfacial reaction, and solder joint reliability. For studying joint strength between solders and under bump metallurgy (UBM) systems, various UBMs were prepared by electroplating and electroless plating. After T/C (temperature cycle) test, Sn3.5Ag8.5In solder was partially corroded and its shape was distorted. This phenomenon was observed in a Sn3Ag10In 1Cu solder system, too. Their fractured surface, microstructure of solder joint interface, and of bulk solder ball were examined and analyzed by optical microscopy, SEM and EDX. To simulate the real surface mounting condition and evaluate the solder joint reliability on board level, Daisy chain test samples using LF-CSP packages were prepared with various Pb-free solders, then a temperature cycle test (−65∼ 150°C) was performed. All tested Pb-free solders showed better board level solder joint reliability than Sn-36Pb-2Ag. Sn-3.5Ag-0.7Cu and Sn-9Zn-1Bi-5In solders showed 35%, 100% superior solder joint reliability than Sn-36Pb-2Ag solder ball, respectively.     

Interfacial microstructure and strength of lead-free Sn-Zn-RE BGA solder bumps

Rare earth (RE) elements, primarily La and Ce, were doped in Sn-Zn solder to improve its properties such as wettability. The interfacial microstructure evolution and shear strength of the Sn-9Zn and Sn-9Zn-0.5RE (in wt%) solder bumps on Au/Ni/Cu under bump metallization (UBM) in a ball grid array (BGA) were investigated after thermal aging at 150 /spl deg/C for up to 1000 h. In the as-reflowed Sn-9Zn solder bump, AuSn/sub 4/ intermetallic compounds (IMCs) and Au-Zn circular IMCs formed close to the solder/UBM interface, together with the formation of a Ni-Zn-Sn ternary IMC layer of about 1 /spl mu/m in thickness. In contrast, in the as-reflowed Sn-9Zn-0.5RE solder bump, a spalled layer of Au-Zn was formed above the Ni layer. Sn-Ce-La and Sn-Zn-Ce-La phases were found near the interface at positions near the surface of the solder ball. Upon thermal aging at 150 /spl deg/C, the concentration of Zn in the Ni-Zn-Sn ternary layer of Sn-9Zn increased with aging time. For Sn-9Zn-0.5RE, the Au-Zn layer began to dissolve after 500 h of thermal aging. The shear strength of the Sn-9Zn ball was decreased after the addition of RE elements, although it was still higher than that of the Sn-37Pb and Sn-36Pb-2Ag Pb-bearing solders. The fracture mode of the Sn-9Zn system was changed from ductile to partly brittle after adding the RE elements. This is mainly due to the presence of the brittle Au-Zn layer.     

Investigation of flip chip under bump metallization systems of Cupads

In this study, UBM material systems for flip chip solder bumps on Cu pads were investigated using the electroless copper (E-Cu) and electroless nickel (E-Ni) plating methods; and the effects of the interfacial reaction between UBMs and Sn-36Pb-2Ag solders on the solder bump joint reliability were also investigated to optimize UBM materials for flip chip on Cu pads. For the E-Cu UBM, scallop-like Cu₆Sn₅, intermetallic compound (IMC) forms at the solder/E-Cu interface, and bump fracture occurred along this interface under a relatively small load. In contrast, at the E-Ni/E-Cu UBM, E-Ni serves as a good diffusion-barrier layer. The E-Ni effectively limited the growth of the IMC at the interface, and the polygonal-shape Ni₃ Sn₄ IMC resulted in a relatively higher adhesion strength compared with the E-Cu UBM. As a result, electroless deposited UBM systems were successfully demonstrated as low cost UBM alternatives on Cu pads. It was found that the E-Ni/E-Cu UBM material system was a better choice for solder flip chip interconnection on Cu pads than the E-Cu UBM     

Pb-free Sn/3.5Ag electroplating bumping process and under bump metallization (UBM)

Pb-free solder is one of the biggest issues in today's electronic packaging industry. This paper introduces a newly developed Sn/3.5Ag alloy plating process for wafer level bumping. The effects of Under Bump Metallization (UBM) on the process, interfacial reaction, and mechanical strength have been investigated. Four different types of sputtering-based UBM layers-TiW/Cu/electroplated Cu, Cr/CrCu/Cu, NiV/Cu, and TiW/NiV-were fabricated with eutectic Pb/63Sn and Sn/3.5Ag solder. The result shows that the Sn/Ag solder gains Cu or Ni from UBM's and becomes Sn/Ag/Cu or Sn/Ag/Ni during reflow process. Sn/Ag solder has higher reactivity with Cu and Ni than Pb/63Sn. The Intermetallic Compound (IMC) spalling from the interface between UBM/solder has been observed on Cr/CrCu/Cu and TiW/NiV UBM's. However, the IMC spalling phenomena did not decrease the bump shear strength with a bump size of 110 /spl mu/m, whereas a size of 60 /spl mu/m brought a decrease in shear value and failure mode change.     

Experimental characterization and mechanical behavior analysis of intermetallic compounds of Sn–3.5Ag lead-free solder bump with Ti/Cu/Ni UBM on copper chip

Due to today’s trend towards ‘green’ products, the environmentally conscious manufacturers are moving toward lead-free schemes for electronic devices and components. Nowadays the bumping process has become a branch of the infrastructure of flip chip bonding technology. However, the formation of excessively brittle intermetallic compound (IMC) between under bump metallurgy (UBM)/solder bump interface influences the strength of solder bumps within flip chips, and may create a package reliability issue. Based on the above reason, this study investigated the mechanical behavior of lead-free solder bumps affected by the solder/UBM IMC formation in the duration of isothermal aging. To attain the objective, the test vehicles of Sn–Ag (lead-free) and Sn–Pb solder bump systems designed in different solder volumes as well as UBM diameters were used to experimentally characterize their mechanical behavior. It is worth to mention that, to study the IMC growth mechanism and the mechanical behavior of a electroplated solder bump on a Ti/Cu/Ni UBM layer fabricated on a copper chip, the test vehicles are composed of, from bottom to top, a copper metal pad on silicon substrate, a Ti/Cu/Ni UBM layer and electroplated solder bumps. By way of metallurgical microscope and scanning-electron-microscope (SEM) observation, the interfacial microstructure of test vehicles was measured and analyzed. In addition, a bump shear test was utilized to determine the strength of solder bumps. Different shear displacement rates were selected to study the time-dependent failure mechanism of the solder bumps. The results indicated that after isothermal aging treatment at 150 °C for over 1000 h, the Sn–Ag solder revealed a better maintenance of bump strength than that of the Sn–Pb solder, and the Sn–Pb solder showed a higher IMC growth rate than that of Sn–Ag solder. In addition, it was concluded that the test vehicles of copper chip with the selected Ti/Cu/Ni UBMs showed good bump strength in both the Sn–Ag and Sn–Pb systems as the IMC grows. Furthermore, the study of shear displacement rate effect on the solder bump strength indicates that the analysis of bump strength versus thermal aging time should be identified as a qualitative analysis for solder bump strength determination rather than a quantitative one. In terms of the solder bump volume and the UBM size effects, neither the Sn–Ag nor the Sn–Pb solders showed any significant effect on the IMC growth rate.     

Effects of mechanical deformation and annealing on the microstructure and hardness of Pb-free solders

The microstructure property relations of several Pb-free solders are investigated to understand the microstructural changes during thermal and mechanical processes of Pb-free solders. The Pb-free solder alloys investigated include pure Sn, Sn-0.7% Cu, Sn-3.5% Ag, and Sn-3.8% Ag-0.7% Cu (in weight percent). To reproduce a typical microstructure observed in solder joints, the cooling rate, ingot size, and reflow conditions of cast alloys were carefully controlled. The cast-alloy pellets are subjected to compressive deformation up to 50% and annealing at 150°C for 48 h. The microstructure of Pb-free solders is evaluated as a function of alloy composition, plastic deformation, and annealing. The changes in mechanical property are measured by a microhardness test. The work hardening in Sn-based alloys is found to increase as the amount of alloying elements and/or deformation increases. The changes in microhardness upon deformation and annealing are correlated with the microstructural changes, such as recrystallization or grain growth, in Pb-free solder alloys.     

Prevention of spalling by the self-formed reaction barrier layer on controlled collapse chip connections under bump metallization

The spalling phenomenon on under bump metallization (UBM) is one of the current urgent reliability issues for the Pb-free solder implementation in flip chip technology. In this paper, we report that spalling of Ni thin UBM can be prevented during the soldering reaction, if a Cu reservoir is introduced into the structure of controlled collapse chip connections (C4) solder joints. Once molten Sn-3.5Ag solder was saturated with Cu atoms, Cu precipitated out as a layer of Cu-Sn compound on Ni thin UBM. The Cu-Sn compound layer served as a reaction barrier to retard the consumption of Ni thin UBM. So, spalling was retarded. After prolonged reflowing, Ni thin UBM was converted to ternary Cu-Sn-Ni compounds. Unlike interfaces of the Ni-Sn compound/Cr, the interface of the Cu-Sn-Ni compound/Cr was very stable and no spalling was found.     

Creep resistance of tin-based lead-free solder alloys

This paper reports on the microstructure-creep property relationship of three precipitation-strengthened tin (Sn)-based lead (Pb)-free solder alloys (Sn-0.7Cu, Sn-3.5Ag, and Sn-3.8Ag-0.7Cu) in bulk samples, together with Sn-37Pb as the alloy for comparison at temperatures of 303 K, 348 K, and 393 K. The creep resistance of these three Sn-based Pb-free solders increases, i.e., the steady-state creep rates decrease, with increasing volume fraction of precipitate phases for the Pb-free solder alloys. Their apparent stress exponents (n_a ∼ 7.3-17), which are all higher than that of pure Sn, attain higher values with increasing volume fraction of precipitate phases at constant temperature, and with decreasing temperature for the same solder alloy.     

The Crystal Orientation of β-Sn Grains in Sn-Ag and Sn-Cu Solders Affected by Their Interfacial Reactions with Cu and Ni(P) Under Bump Metallurgy

Recently, it has been reported that the crystal orientation and grain size of the β-Sn phase in Sn-rich solders have profound effects on the reliabilities of Pb-free solder joints, such as thermo-mechanical fatigue and electromigration. Additionally, it is also known that the microstructure of the Sn-rich solders is strongly affected by their alloy composition. In this study the grain size and orientation of the β-Sn phase were investigated in terms of their alloy composition and interfacial reactions with two different under bump metallurgies (UBMs), Cu and Ni(P). Solder balls (380 μm in diameter) of pure Sn, Sn-0.5Cu, Sn-0.5Ag, and Sn-1.8Ag (in weight percent) were reflowed on Cu and Ni(P) UBMs. After the reflow at 250°C for 120 s, the microstructure of the solder joints was analyzed by cross-polarization light microscopy and electron backscatter diffraction. For the compositional analysis of solder joints, electron probe micro-analysis was used and thermodynamics calculations were also performed. During reflow on Cu or Ni(P) UBM, Cu and Ni atoms were dissolved quickly and were saturated to their solubility limits in the solders, causing changes in composition and β-Sn grain orientation.     

Electromigration Behavior in Sn-37Pb and Sn-3.0Ag-0.5Cu Flip-Chip Solder Joints under High Current Density

The electromigration of conventional Sn-37Pb and Pb-free Sn-3.0Ag-0.5Cu (in wt.%) solder bumps was investigated with a high current density of 2.5 × 10⁴ A/cm² at 423 K using flip-chip specimens comprised of an upper Si chip and a lower bismaleimide triazine (BT) substrate. Electromigration failure of the Sn-37Pb and Sn-3.0Ag-0.5Cu solder bumps occurred with complete consumption of electroless Ni immersion Au (ENIG) underbump metallization (UBM) and void formation at the cathode side of the solder bump. Finite element analysis and computational simulations indicated high current crowding of electrons in the patterned Cu on the Si chip side, whereas the solder bumps and Cu line of the BT substrate had a relatively low density of flowing electrons. These findings were confirmed by the experimental results. The electromigration reliability of the Sn-3.0Ag-0.5Cu solder joint was superior to that of Sn-37Pb.     

Growth prediction of tin/copper intermetallics formed between 63/37 Sn/Pb and OSP coated copper solder pads for a flip chip application

This study quantifies the effect of temperature and time on the growth of Cu-Sn intermetallics, specifically for flip chip/ball grid array packaging technology. The activation energy and the growth rates were determined for solid state diffusion, after the initial assembly reflow(s). Three different types of solder joints were investigated. 1) BGA 63/37 solder joints which were formed by a standard convection oven attach of 30 mil (760 /spl mu/m)diameter solder spheres to OSP protected, Cu plated ball pads of an organic flip chip substrate. The ball pads are solder mask defined and of 0.635 mm nominal diameter. 2) Flip chip bump pad solder joint consisting of 63/37 eutectic solder bumped die attached to a nonsolder mask defined, OSP protected, Cu plated pad of the flip chip substrate. The flip chip bumps on the die are created by screen printing solder paste on the die pads and subsequent reflow attach, by a standard convection oven to the die under bump metallurgy (UBM). The nominal die UBM pad diameter is 0.085 mm. 3) Solder joint formed on a coupon which involved the reflow of the balls randomly placed on a Cu plated layer with no solder mask coating. The investigation was performed by first establishing the intermetallic growth rate at six different temperatures, ranging from 85/spl deg/C to 150/spl deg/C. The relationship between intermetallic growth and time was shown to essentially follow the common parabolic diffusion relationship to temperature especially above 100/spl deg/C. The activation energy (E/sub a/) and the growth constant (k/sub 0/) were then calculated from this data. The results showed that the E. for the total intermetallic thickness was essentially similar for the three solder joint configurations of the ball, bump and the coupon described above. E. varied from 0.31 eV to 0.32 eV, while the k/sub 0/ varied from 18.0 /spl mu/m/s/sup 1/2 / to 24.2 /spl mu/m/s/sup 1/2 /.     

Low-cycle fatigue characteristics of Sn-based solder joints

Low-cycle, lap-shear fatigue behavior of Sn-based, Pb-free solder alloys, Sn-3.5Ag, Sn-3.5Ag-Cu, Sn-3.5Ag-Bi, and Sn-0.7Cu, were studied at room temperature using specimens with printed circuit board (PCB)/solder/PCB structure under total displacement of ±10 μm, 12 μm, 15 μm, and 20 μm. The fatigue lives of various solder joint materials, defined as 50% load drop, were correlated with the fracture paths and analyzed using the Coffin-Manson relation, Morrow’s plastic-energy dissipation model, and Solomon’s load-drop parameter. The Sn-3.5Ag, Sn-0.7Cu eutectics, and Sn-3.5Ag-Cu ternary alloys showed the same level of fatigue resistance, while Bi-containing alloys showed substantially worse fatigue properties. Cross-sectional fractography revealed cracks initiated at the solder wedge near the solder mask and subsequently propagated into the solder matrix in the former group of alloys, in contrast with the crack propagation along the solder/under bump metallurgy (UBM) interfaces in the Sn-3.5Ag-Bi alloys. Inferior fatigue resistance of Bi-containing alloys was ascribed to high matrix hardness, high stiffness, possible Bi segregation to the interface, and high residual stress in the interfacial area.     

Under bump metallurgy study on copper/low-k dielectrics for fine pitch flip chip packaging

Because the semiconductor speed increases continuously, more usage of low-k dielectric materials to enhance the performance in Cu chips has taken place over the past few years. The implementation of copper (Cu) as an interconnect, in conjunction with the ultra-low-k materials as interlevel dielectrics or intermetal dielectrics in the fabrication of ultra-large-scale integrated circuits, has been used in the semiconductor community worldwide, especially for high-speed devices. The objective of this study is to investigate the under bump metallurgy (UBM) characterization with low-k dielectric material used in damascene Cu-integrated circuits. This paper focuses on electroless Ni/Au, Cu/Ta/Cu, and Ti/ Ni(V)/Cu/Au UBM fabrication on 8-in. damascene Cu wafers and flip chip package reliability with Pb-bearing and Pb-free solders. The interfacial diffusion study and bump shear test were carried out to evaluate the bump bonding, and the failure was analyzed with optical microscopy, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). In order to investigate the thermal stability of the UBM system with Pb-free solder, high-temperature aging (above the melting temperature) was performed and each interface between the solder and UBM was observed with optical microscopy, SEM, and TEM, respectively. The failures observed and the modes are reported in the paper.     

Plasma reflow bumping of Sn-3.5 Ag solder for flux-free flip chip package application

A new flux-free reflow process using Ar+10%H/sub 2/ plasma was investigated for application to solder bump flip chip packaging. The 100-/spl mu/m diameter Sn-3.5wt%Ag solder balls were bonded to 250-/spl mu/m pitch Cu/Ni under bump metallurgy (UBM) pattern by laser solder ball bonding method. Then, the Sn-Ag solder balls were reflowed in Ar+H/sub 2/ plasma. Without flux, the wetting between solder and UBM occurred in Ar+H/sub 2/ plasma. During plasma reflow, the solder bump reshaped and the crater on the top of bump disappeared. The bump shear strength increased as the Ni/sub 3/Sn/sub 4/ intermetallic compounds formed in the initial reflow stage but began to decrease as coarse (Cu,Ni)/sub 6/Sn/sub 5/ grew at the solder/UBM interface. As the plasma reflow time increased, the fracture mode changed from ductile fracture within the solder to brittle fracture at the solder/UBM interface. The off-centered bumps self-aligned to patterned UBM pad during plasma reflow. The micro-solder ball defects occurred at high power prolonged plasma reflow.     

Reliability issues in Pb-free solder joint miniaturization

As solder joints become increasingly miniaturized to meet the severe demands of future electronic packaging, it is vitally important to consider whether the solder joint size and geometry could become reliability issues and thereby affect implementation of the Pb-free solders. In this study, three bumping techniques, i.e., solder dipping, stencil printing followed by solder reflow, and electroplating of solders with subsequent reflow, were used to investigate the interfacial interactions of molten Sn-3.5Ag, Sn-3.8Ag-0.7Cu, and pure Sn solders on a copper pad at 240°C. The resultant interfacial microstructures, coming from a variety of Cu pads, with sizes ranging from 1 mm to 25 μm, and representing different solder bump geometries, have been investigated. In addition, a two-dimensional thermodynamic/kinetic model has been developed to assist the understanding of the kinetics of interdiffusion and the formation of interfacial intermetallic compounds. Experimental results and theoretical predictions both suggest that the solder bump size and geometry can influence the as-soldered microstructure; therefore, this factor should be taken into consideration for the design of future reliable ultrafine Pb-free solder joints.     

Reactions of lead-free solders with CuNi metallizations

We have done experimental research on the dissolution rate and intermetallic growth on Cu, Ni, and CuNi-alloy substrates as a function of time and Cu/Ni ratio of the substrate. Reactions that occur when CuNi metallizations are soldered with lead-free solders were investigated. The experiments were performed using Sn-3.5Ag and Sn-3.8Ag-0.7Cu solders and different CuNi alloys. To determine the rate of dissolution of the substrate material into the solder, CuNi foils of different concentrations were immersed in Sn-3.5Ag and Sn-3.8Ag-0.7Cu solder baths for soldering times ranging from 15 sec to 5 min at 250°C. In addition, reflows of solder balls were made on top of bulk substrates to study the reaction when there is a practically infinite amount of CuNi available compared to the amount of solder. Thin film experiments were also done, where Ni containing under bump metallizations (UBMs) were fabricated and reflowed with eutectic SnAg solder balls. The nickel slows down the dissolution of the UBM into the solder and the formation of intermetallics during reflow compared to Cu metallizations. The solder/UBM interfaces were analyzed with SEM to find out how Ni concentration affects the reaction, and how much Ni is needed to obtain a sufficiently slow reaction rate.     

The Shear Strength and Fracture Behavior of Sn-Ag-<Emphasis Type="Italic">x</Emphasis>Sb Solder Joints with Au/Ni-P/Cu UBM

This study investigates the effects of Sb addition on the shear strength and fracture behavior of Sn-Ag-based solders with Au/Ni-P/Cu underbump metallization (UBM) substrates. Sn-3Ag-xSb ternary alloy solder joints were prepared by adding 0 wt.% to 10 wt.% Sb to a Sn-3.5Ag alloy and joining them with Au/Ni-P/Cu UBM substrates. The solder joints were isothermally stored at 150°C for up to 625 h to study their microstructure and interfacial reaction with the UBM. Single-lap shear tests were conducted to evaluate the mechanical properties, thermal resistance, and failure behavior. The results show that UBM effectively suppressed intermetallic compound (IMC) formation and growth during isothermal storage. The Sb addition helped to refine the Ag₃Sn compounds, further improving the shear strength and thermal resistance of the solders. The fracture behavior evolved from solder mode toward the mixed mode and finally to the IMC mode with increasing added Sb and isothermal storage time. However, SnSb compounds were found in the solder with 10 wt.% Sb; they may cause mechanical degradation of the solder after long-term isothermal storage.     

Effects of Cu contents in Pb-free solder alloys on interfacial reactions and bump reliability of Pb-free solder bumps on electroless Ni-P under-bump metallurgy

Using the screen-printed solder-bumping technique on the electroless plated Ni-P under-bump metallurgy (UBM) is potentially a good method because of cost effectiveness. As SnAgCu Pb-free solders become popular, demands for understanding of interfacial reactions between electroless Ni-P UBMs and Cu-containing Pb-free solder bumps are increasing. It was found that typical Ni-Sn reactions between the electroless Ni-P UBM and Sn-based solders were substantially changed by adding small amounts of Cu in Sn-based Pb-free solder alloys. In Cu-containing solder bumps, the (Cu,Ni)₆Sn₅ phase formed during initial reflow, followed by (Ni,Cu)₃Sn₄ phase formation during further reflow and aging. The Sn3.5Ag solder bumps showed a much faster electroless Ni-P UBM consumption rate than Cu-containing solder bumps: Sn4.0Ag0.5Cu and Sn0.7Cu. The initial formation of the (Cu,Ni)₆Sn₅ phase in SnAgCu and SnCu solders significantly reduced the consumption of the Ni-P UBM. The more Cu-containing solder showed slower consumption rate of the Ni-P UBM than the less Cu-containing solder below 300°C heat treatments. The growth rate of the (Cu,Ni)₆Sn₅ intermetallic compound (IMC) should be determined by substitution of Ni atoms into the Cu sublattice in the solid (Cu,Ni)₆Sn₅ IMC. The Cu contents in solder alloys only affected the total amount of the (Cu,Ni)₆Sn₅ IMC. More Cu-containing solders were recommended to reduce consumption of the Ni-based UBM. In addition, bump shear strength and failure analysis were performed using bump shear test.     

Effect of thermal cycling on the adhesion strength of Sn-9Zn-xAg-Cu interface

The effect of thermal cycling on the adhesion strength of the Sn-9Zn-xAg-Cu interface has been investigated by using pull-off tester, X-ray diffractometer, scanning electron microscope and energy dispersive spectrometer. The Sn-9Zn-xAg lead-free solders offer a better thermal cyclic resistance than the 63Sn-37Pb and Sn-9Zn solder alloys. The adhesion strength of the Sn-9Zn-Cu interface increases from 4.4 /spl plusmn/ 0.4 MPa to 13.8 /spl plusmn/ 0.9 MPa with increasing the thermal cycles from zero to three times but it decreases to 8.5 /spl plusmn/ 0.8 MPa for five cycles. The Sn-9Zn-xAg solder alloys (x=0.5, 2.5, and 3.5 wt%) have a similar tendency and the maximum adhesion strength of 21.41 /spl plusmn/ 1.5 MPa for the Sn-9Zn-2.5Ag solder alloy has been obtained after three thermal cycles. The adhesion strength of the Sn-9Zn-1.5Ag-Cu interface increases from 7.8 /spl plusmn/ 0.6 to 16.6 /spl plusmn/ 0.9 MPa with increasing the thermal cycles from 0 to 5 times.