GaAs MESFET大信号模型参数的计算机提取

利用GaAs MESFET的小信号S参数及瞬态I—V特性的测量数据,建立了GaAsMESFET的大信号分析模型,编制计算机程序,进行了参数拟合并比较了GaAs MESFET两种非线性模型的适用范围,使用分步优化的方法拟合GaAs MESFET小信号S参数,获取了大信号模型中的线性参数,非线性参数值利用最小二乘法及直接优化法相结合的算法提取。为非线性电路、功率放大器、混频器、振荡器提取了准确的设计参数。     

Frequency Variations of π-equivalent Circuit Parameters of a Junction Transistor †

One of the most useful small-signal equivalent circuit representations is based on a m-equivalent circuit representation of the transistor in a common-emitter connection. This m-equivalent circuit representation is more readily and commonly employed in circuit analysis or design in comparison with a ^'-equivalent circuit representation. The variation of equivalent circuit parameters at high frequencies in the π-equivalent circuit representation was determined by Giacoletto experimentally. Unfortunately, however, we have no example but the above, in spite of this problem being very common and important. The exact expression for π-equivalent circuit parameters is too complicated to be calculated. The result may be somewhat simplified by expanding the hyperbolic function into a Taylor series and retaining only the first few terms. Numerical values of these approximate expressions are calculated and then compared with values calculated from the corresponding exact expression. Furthermore, w-equivalent circuit parameters relative to low-frequency values are given as a function of frequency relative to f_T and f_α. The π-equivalent circuit parameters of a p-n-p germanium alloy-junction transistor of the diffusion (homogeneous base) type are obtained by measuring small-signal h parameters under the low-level injection conditions with an impedance bridge. Then, it is made clear that they are in reasonably good agreement with theoretical values. The approximate expression for α is proposed, where α is analysed in terms of magnitude and phase shift. It is shown that it is more exact and more useful than the expressions such as the Thomas-Moll expression, etc., as a result of discussing the errors in the approximations of the equations.     

Small-signal analysis and control design of asymmetrical half-bridge DC-DC converters

This paper presents the small-signal modeling, dynamic analysis, and control design of the asymmetrical half-bridge dc-dc converter that employs a clamp capacitor and a magnetizing inductor to accommodate pulsewidth-modulated operation with asymmetrical duty ratios. The circuit averaging technique is applied to extract the small-signal dynamics of the power stage, and a graphical loop-gain method is used to design the feedback compensation and analyze the closed-loop performance of the converter. The distinctive power-stage dynamics of the converter are addressed and design guidelines for voltage feedback compensation are established. The results of the control design and closed-loop analysis are substantiated by experiments using an experimental converter.     

Modeling and small-signal analysis of controlled on-time boostpower-factor-correction circuit

A large-signal average model for the controlled on-time boost power-factor-correction (PFC) circuit is developed and subsequently linearized, resulting in a small-signal model for the PFC circuit. AC analyses are performed using the small-signal model, revealing new results on the small-signal dynamics of the PFC circuit. The analysis results and model predictions are confirmed with experimental measurements on a 200-W prototype PFC circuit     

Design-oriented analysis of common switching DC to DC converters

A general, computer-aided analysis of power electronic circuit dynamics is proposed. An automatic generation of dynamic models from a circuit specification is the starting point for a symbolic, automatable, exact, ‘top-down’ procedure, that contrasts with circuit-specific analyses. The algorithm is suitable for analysing any converter containing two reactive elements, covering the common switching power stages: buck, boost, buck-boost converters. The method is illustrated by application to the computation of the transient response of a boost converter; the computer results are compared with those obtained by applying the ‘state space averaging’ method and with laboratory results.     

Computer-aided modeling of quasi-resonant converters in thepresence of parasitic losses by using the MISSCO concept

The DC and small-signal models of quasi-resonant converters, operating in both half-wave and full-wave modes, are developed in a suitable form for computer simulation. The starting step is the extraction of a minimum separable switching configuration (MISSCO) containing all power switches but a minimum number of other components (resonant ones). By using the step-response analysis and average technique, and by perturbing and separating the DC and AC components in the resulting equations, the equivalent models of MISSCO are derived. They are introduced in the converter structure to replace the circuit initially extracted. Models of different quasi-resonant converters can be obtained by this general approach. The analysis takes into account the conduction losses of the switching devices and reactive elements, which improves considerably the model accuracy. Model-based computer simulation agrees with the experimental results     

MOS power transistor model for Electromagnetic Susceptibility analysis

This paper deals with the susceptibility of MOS power transistors to radio frequency interference. An nMOS connected in the low-side configuration is considered and the failures that result from disturbances superimposed onto the drain-source nominal signal are discussed. The susceptibility of power transistors to electromagnetic interference is analyzed referring to small-signal equivalent circuits and the influence of the gate-source input loop impedance is highlighted. To these purpose a distributed gate resistance model is used in small-signal analysis and time domain simulations. The results obtained with this model are in a much better agreement with the experimental results than those obtained with commonly used lumped models are. On the basis of these investigations some technology and design solutions are proposed to reduce the susceptibility to electro-magnetic disturbances affecting the drain-source terminals of a power MOS transistor connected in the low-side configuration.     

11.GHz GaAs Power MESFET Load-Pull Measurements Utilizing a New Method of Determining Tuner Y Parameters

A Ioad-pull technique utilizing a new method of determining tuner Y parameters is proposed for huge-signal characterization of microwave power transistors. Large-signal input-output transfer characteristics of an active circuit containing a GaAs FET and an input matching circuit are measured by inserting a microstrip tuner between the active circuit output drain terminal and the 50-Omega load. The microstrip-tuner Y parameters are determined by comparing the dc bias-dependent small-signal S parameter S/sub 22/ of the active circuit and that of the circuit which contains the active circuit and microstrip tuner. The reflection coefficient presented to the active circuit output drain terminal is derived from tuner Y parameters. Optimal load impedances for output power, obtained with this new Ioad-pull technique, are used to design X-band GaAs FET power amplifiers. An 11-GHz power amplifier with a 3000-mu m gate-width FET chip delivers 1-W microwave power output with 4-dB gain in the 500-MHz band.     

Analytical expressions for intermodulation distortion of a MESFET small-signal amplifier using the nonlinear Volterra series

Using the nonlinear Volterra series representation, analytical expressions for the third-order intermodulation distortion power and intercept point for a MESFET small-signal amplifier are derived when its equivalent circuit is bilateral and includes the gate-to-drain capacitance (C_gd) explicitly as a nonlinear element. Previously developed analytical expressions treated C_gd as a linear element or incorporated it as a part of gate-to-source and drain-to-source capacitances (C_gs and C_ds). These new analytical expressions are then compared with experimental data and good agreement is obtained. The analytical expressions are also used to study the variation of intermodulation distortion with input power and frequency, and the effect of the individual nonlinear elements in the MESFET’s equivalent circuit.     

Symbolic Macromodeling for Statistical Simulation of Operational Amplifiers

Symbolic circuit simulator is traditionally applied to the small-signal analysis of analog circuits. This paper establishes a symbolic behavioral macro-modeling method applicable to both small-signal and large-signal analysis of general two-stage operational amplifiers (op-amps). The proposed method creates a two-pole parametric macromodel whose parameters are analytical functions of the circuit element parameters generated by a symbolic circuit simulator. A moment matching technique is used in deriving the analytical model parameter. The created parametric behavioral model can be used for op-amps performance simulation in both frequency and time domains. In particular, the parametric models are highly suited for fast statistical simulation of op-amps in the time-domain. Experiment results show that the statistical distributions of the op-amp slew and settling time characterized by the proposed model agree well with the transistor-level results in addition to achieving significant speedup.     

Synchronization and Small-Signal Analysis of Nonlinear Periodic Circuits

Common approaches to simulate the steady-state behavior of nonlinear periodic circuits forced by a periodic signal of small amplitude assume that the forcing signal effects are additive to the steady-state solution of the unperturbed circuit. This assumption leads to the adoption of the variational model of the nonlinear unperturbed circuit. The variational model does not pose any particular problem when dealing with nonautonomous circuits, but must be suitably formulated when autonomous circuits are considered and the frequency of the forcing signal is close to the working frequency of the unperturbed nonlinear circuit. We show that, in this case, synchronization effects must be accounted for, and, as synchronization phenomena are intrinsically nonlinear, it is impossible to take them into account using a variational model. In fact, conventional variational models are derived from the unperturbed nonlinear circuit working at steady state and with a fixed relative phase between perturbation and system, i.e., without any possibility of phase shifts (that is, of any dynamics leading to possible synchronization). In general, this yields inaccurate or even wrong results. In this paper, we investigate this limitation of the approaches based on the variational model. Some simulation results are reported that show the transition between the nonsynchronization region to the synchronization one of well-known simple oscillators, such as the Van der Pol one when the parameters of the small-signal perturbation are varied.     

Modeling and analysis of static and dynamic characteristics forbuck-type three-phase PWM rectifier by circuit DQ transformation

The static and dynamic characteristics of buck-type three-phase pulse width modulation (PWM) rectifier are fully analyzed based on the DC and AC circuit models developed by the circuit DQ transformation. Various static power converter characteristics such as gain, real and reactive power, power factor and unity power factor conditions are completely analyzed. Transition characteristics are also analyzed by both exact small-signal models with full set of equations and simplified output models in explicit form. The usefulness of the models is verified through computer simulations and experiments with good agreement shown     

Small-signal MOSFET models for analog circuit design

Presents first-order large-signal MOSFET models and derives corresponding small-signal models. The parameters of the small-signal models are related to operating-point bias and to the parameters of the IC process used to fabricate the device. The impact upon small-signal performance of many second-order effects present in small-geometry MOSFETs is explored. A representative analog circuit, fabricated with a 1 /spl mu/m feature-size NMOS technology, is analyzed using the small-signal models derived. Results of approximate analysis, without the use of computer aids, are compared with detailed computer simulation results.     

A critical analysis of Z-source converters considering the effects of internal resistances

Nowadays Z-source networks are the most promising power converter networks that cover almost all electric power conversion (dc–dc, dc–ac, ac–dc and ac–ac) applications. However, the controller design is critical for Z-source converter (ZSC) due to the presence right-half-plane zero (RHPZ) in the control-to-capacitor-voltage transfer function. This RHPZ exhibits non-minimum phase undershoot in the capacitor voltage and also in the dc-link voltage waveforms. A perfect small-signal model is required to predict locations of the RHP zero and its dynamics. This paper contributes towards the small-signal analysis of ZSC under continuous conduction mode considering the parasitic resistance of the inductor, equivalent series resistance of the capacitor, internal resistances of active switch and forward voltage drop of the diode. The maximum allowable value of shoot-through duty ratio (STDR) and voltage gain for different values of the internal resistance and load resistance are discussed in this paper. The accuracy of the developed small-signal average model is compared with detailed circuit model in MATLAB/SIMULINK. Finally, the steady-state simulation results of ZSC are validated with hardware results.     

Small-signal modeling of a single-switch AC/DCpower-factor-correction circuit

In this paper, a small-signal model for a new single-switch single-stage switched-mode power-factor-correction (PFC) converter is presented. The model is obtained by applying the small-signal perturbation technique to the circuit equations derived from the state-space averaging method. By applying the perturbation and averaging techniques over one switching cycle, the DC and small-signal equivalent circuit representations of this converter are derived. The result shows that this converter exhibits the transfer characteristics of a second-order low-pass system for the output-to-input transfer function and that of a combined second-order low-pass and band-pass system for the output-to-control transfer function. The validity of the proposed mathematical model was verified by the given experimental results for a specified design example     

B-Spline Based, Large-Signal DC and Microwave-Model for SOI MOSFETs

We present a large/small-signal, non-quasi-static, charge conserving, SOI MOSFET modeling technique suitable for DC and high frequency circuit design. The device model is extracted from small signal microwave iso-thermal Y-parameter data and DC I–V characteristics. Low frequency dispersions associated with self-heating and floating body effects are verified to not limit the performance of this technique since it relies on both DC and transient I–V characteristics. The technique is applied to the modeling of a short-channel, partially depleted, SOI nMOSFET simulated on PISCES. The model generated is incorporated into a circuit simulator, which is used to perform large-signal transient and harmonic balance simulations. The transient I–V and gate charge extracted from the iso-thermal small-signal microwave Y-parameters, are in excellent agreement with the iso-thermal transient I–V and gate charge obtained from PISCES, respectively. The model topology is extended with a parasitic bipolar sub-circuit which automatically calculates the DC operating point for self-biasing circuits. Transient and non-linear power characterization results predicted with this model agree well with those obtained from PISCES for a wide range of input power drives. A complete electro-thermal model is proposed and verified to be able to predict temperature and transient I–V response.     

基于小信号模型的Boost—PFC控制电路优化设计

在设计PFC开关电源时,除了追求高功率因数以外,良好的稳定性和动态性能也是至关重要的。在此给出平均电流控制型Boost—PFC功率电路的小信号模型,通过对双环反馈控制电路的分析,用频域法对电流控制环和电压控制环进行反馈综合。通过选择合适的补偿网络、进行合理的零极点配置,来改善电路的特性,使电路保持较好的稳定性和动态性能。在此基础上,使用最优控制理论,对补偿网络的参数进行优化设计,并通过Matlab仿真证明该优化设计可行。     

Transistor equivalent circuits

This paper surveys the history of the electric-circuit representation of the transistor over the past fifty years. During the first two decades after the transistor was announced in 1948, primary emphasis was on small-signal equivalent circuits, which could be used for linear-circuit analysis and design. In addition, parameters of many of these equivalent circuits for the bipolar junction transistor, which are described, were related to the physical construction of the device. Approximately two-thirds of the paper is devoted to this period, when the writer personally contributed to this effort. By the beginning of the third decade, transistor circuits had became more complex, and circuit analysis was carried out with the help of digital computers. Interest then shifted away from small-signal equivalent circuits to “models” for computer-aided circuit design (CACD). This transition, including the models used in the widely used CACD program SPICE, is described. MOS transistors are treated only briefly; by the time MOS transistors became commercially viable devices, emphasis then also had shifted to “models” for CACD. In conclusion, the writer notes that there is still hope for us aficionados of small-signal equivalent circuits; new types of transistors are still being characterized in this manner     

Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions

Empirical electron device models based on lumped equivalent circuits are usually identified through nonlinear optimization procedures, which are based on the best fitting between the extrinsic model behavior and measurements carried out under multibias static and small-signal excitations. In this paper, a new error function is proposed for equivalent circuit model parameter optimization. Although still being defined through standard static and small-signal measurement data, the new error function can be configured so as to obtain models tailored to specific large-signal applications. Experimental results, which confirm the validity of the proposed identification approach, are provided for a GaAs microwave pseudomorphic HEMT model aimed at the design of highly linear power amplifiers.