Planar MESFET grid oscillators using gate feedback

A method for quasi-optically combining the output power of MESFETs in which drain and source leads couple directly to the radiated field is introduced. The design consists of a planar grid of devices placed in a Fabry-Perot cavity. Capacitive feedback is provided to the gate, allowing oscillation at much higher frequencies than previous grids. The oscillation frequency is dependent on the device characteristics, the resonator cavity, and the symmetries of the grid. A transmission-line model for the grid is discussed and used to design two oscillator arrays. A 16-element grid has produced 335 mW of power at 11.6 GHz with a DC-to-RF conversion efficiency of 20%. This design was scaled to produce a 36-element grid oscillator with output power of 235 mW at 17 GHz. These results represent a significant improvement in the performance of planar grid oscillators. The planar configuration of the grid is very convenient for monolithic integration and is easily scalable to millimeter-wave frequencies     

Global quasi-optical Simulations of millimeter-wave receivers

This letter extends the finite difference time domain method to analyze millimeter-wave receivers. The full-wave active antenna modeling technique is designed to be applied to a quasi-optical receiver whereby the radio frequency and local oscillator power are fed in quasi-optically and received by the device functioning simultaneously as an antenna and a mixer. The millimeter-wave receiver being studied consists of an integrated annular slot element with a single planar Schottky barrier diode. Matching circuits and filters in coplanar waveguide line are connected to the annular slot design to create a low-profile receiver.     

Planar oscillators for monolithic integration

Planar oscillators for monolithic millimeter-wave integrated circuits are considered, and a design based on a coplanar-waveguide resonator is described. Design data are obtained from simulation at 1 GHz. the resonator has a Q of 195 (50 when scaled to 100 GHz) and is mechanically tunable over a range of 12%. Combining this resonator with a Gunn diode, a model oscillator is obtained. Output is obtained quasi-optically through a transmitting antenna. Twenty one milliwatts of output at 4.5 GHz are obtained with high spectral purity. A 100 GHz monolithic planar oscillator based on this design should be possible.     

A 100-element planar Schottky diode grid mixer

The authors present a Schottky diode grid mixer suitable for mixing or detecting quasi-optical signals. The mixer is a planar bow-tie grid structure periodically loaded with diodes. A simple transmission line model is used to predict the reflection coefficient of the grid to a normally incident plane wave. The grid mixer power handling and dynamic range scales as the number of devices in the grid. A 10-GHz 100-element grid mixer has shown an improvement in dynamic range of 16.3 to 19.8 dB over an equivalent single-diode mixer. The conversion loss and noise figure of the grid are equal to those of a conventional mixer. The quasi-optical coupling of the input signals makes the grid mixer suitable for millimeter-wave and submillimeter-wave applications by eliminating waveguide sidewall losses and machining difficulties. The planar property of the grid potentially allows thousands of devices to be integrated monolithically     

利用共振隧穿器件制作太赫兹波源

太赫兹波是振荡频率在100GHz～10THz范围的电磁波,利用共振隧穿器件高频高速的特点,适宜制作此波段的振荡源器件。指出与其他类型的太赫兹源器件相比,共振隧穿型太赫兹波源器件具有体积小、重量轻、便于与控制电路集成以及易于进行调制等特点;此外,还适宜用Si透镜进行功率合成,增大其总发射功率。给出几种重要太赫兹共振隧穿器件的结构、制造工艺和器件性能,作为太赫兹技术领域的研究人员选择太赫兹波源器件的参考。     

Microwave characterization of a resistive-gate MESFET oscillator

Measurements of microwave oscillations in resistive-gate MESFET contiguous-domain oscillator devices are discussed. Oscillation frequencies in the ranges from 22 to 30 GHz and 37 to 42 GHz are observed independently of the device length, and frequency can be tuned during operation by varying the source-to-gate voltage. Evidence suggests that the observed signals are harmonics of a fundamental signal in the range from 11 to 15 GHz. While the possibility that conventional transit-time Gunn domain propagation is occurring in this frequency range cannot be ruled out, the fact that frequency is independent of channel length suggests that contiguous domains are forming, at least in the longer devices. Because of its structure, the resistive-gate MESFET oscillator can be easily incorporated into MESFET integrated circuits for MMIC (monolithic microwave integrated circuit) applications     

A 6.5 GHz-11.5 GHz source using a grid amplifier with a twistreflector

The authors have constructed and tested an oscillator using a grid amplifier with external feedback from a twist reflector. The twist reflector serves two functions; it changes the output polarization to match the input, and its position sets the feedback phase. This permits a wider tuning range than has been possible with previous grid oscillators. The source could be continuously tuned from 8.2 GHz to 11.0 GHz by moving the twist reflector. By moving the polarizer and mirror in the twist reflector independently, a 1.8-to-1 frequency range from 6.5 GHz to 11.5 GHz was achieved. The peak effective radiated power was 6.3 W at 9.9 GHz     

Frequency stabilization of power-combining grid oscillator arrays

In this paper, we report the results of phase locking of grid oscillator arrays. First, a voltage-controlled grid oscillator array with a center frequency of 4.7 GHz and with a 300-MHz electric tuning range was locked to a frequency synthesizer through a phase-locked loop. Second, a 4 × 4 and a 6 × 6 grid oscillator arrays were locked by way of the injection locking. In both methods, a simple loop antenna mounted on the reflection mirror was used for taking/injecting signals from/to the array. Results show that the phase noise performance is improved significantly in the locked oscillator arrays     

SIW-Based W-Band Low Phase-Noise Injection-Locked Harmonic Oscillator

A W-band planar injection-locked harmonic oscillator (ILHO) based on substrate integrated waveguide (SIW) is implemented. This ILHO has a free-running output frequency around 94.6?GHz while the technique of harmonic extraction from diodes is used as a frequency multiplier. It has an output locking bandwidth of 300?MHz (from 94.45 to 94.75?GHz) as injecting a signal around 47.3?GHz with the fundamental injection-locked behavior, and the output power is more than 5.8 dBm. The combination of simple synchronization with a low-frequency reference signal allows the generation of stable and low phase-noise W-band signals with a fully integrated planar source.     

基于基片集成波导的W波段基波注入锁定谐波振荡器

研制了一种基于基片集成波导的W波段平面注入锁定谐波振荡器.为了获得大的注入功率,注入锁定谐波振荡器采用基波端口强耦合结构,利用谐波提取技术的频率倍频作用,自由振荡输出频率在90.2 GHz附近.当基波注入信号在45.08 GHz附近时,锁定带宽大干120 MHz,输出功率大于6.5 dBm.将该平面集成的注入锁定谐波振荡器与低频参考信号同步,能够产生稳定的W波段低相噪信号.     

基于基片集成波导的W波段基波注入锁定谐波振荡器

研制了一种基于基片集成波导的W波段平面注入锁定谐波振荡器.为了获得大的注入功率, 注入锁定谐波振荡器采用基波端口强耦合结构, 利用谐波提取技术的频率倍频作用, 自由振荡输出频率在90.2 GHz附近.当基波注入信号在45.08 GHz附近时, 锁定带宽大于120 MHz, 输出功率大于6.5 dBm.将该平面集成的注入锁定谐波振荡器与低频参考信号同步, 能够产生稳定的W波段低相噪信号.     

Transistor oscillator and amplifier grids

Although quasi-optical techniques are applicable to a large variety of solid-state devices, special attention is given to transistors, which are attractive because they can be used as either amplifiers or oscillators. Experimental results for MESFET bar-grid and planar grid oscillators are presented. A MESFET grid amplifier that receives only vertically polarized waves at the input and radiates horizontally polarized waves at the output is discussed. These planar grids can be scaled for operation at millimeter- and submillimeter-wave frequencies. By using modern IC fabrication technology, planar grid oscillators and amplifiers containing thousands of devices can be built, thereby realizing an efficient means for large-scale power combining     

Grid oscillators

Loading a two-dimensional grid with active devices offers a means of combining the power of solid-state oscillators in the microwave and millimeter-wave range. The grid structure allows a large number of negative resistance devices to be combined. This approach is attractive because the active devices do not require an external locking signal, and the combining is done in free space. In addition, the loaded grid is a planar structure amenable to monolithic integration. Measurements on a 25-MESFET grid at 9.7 GHz show power-combining and frequencylocking without an external locking signal, with an ERP of 37 W. Experimental far-field patterns agree with theoretical results obtained using reciprocity.     

Grid oscillators

Loading a two-dimensional grid with active devices offers a means of combining the power of solid-state oscillators in the microwave and millimeter-wave range. The grid structure allows a large number of negative resistance devices to be combined. This approach is attractive because the active devices do not require an external locking signal, and the combining is done in free space. In addition, the loaded grid is a planar structure amenable to monolithic integration. Measurements on a 25-MESFET grid at 9.7 GHz show power-combining and frequencylocking without an external locking signal, with an ERP of 37 W. Experimental far-field patterns agree with theoretical results obtained using reciprocity.     

一种基于SiGe工艺的ECL环形振荡器

介绍了一种基于SiGe平面集成电路工艺制作的ECL环形振荡器,采用15级反相器闭环结构,能够产生280 MHz高频振荡信号,振荡周期为3.58 ns,平均每级反相器延迟为119 ps。该电路结构简单、易集成、成本低,可广泛移植于各类片上系统,用作时钟信号源等。     

Quasi-optical VCOs

Quasi-optical grid voltage controlled oscillators (VCOs) are presented. These VCOs are the first demonstration of a quasi-optical system consisting of several periodic arrays loaded with solid-state devices. A quasi-optical VCO consists of an array of oscillators, a variable capacitance array, and a mirror. The mirror provides feedback for locked power-combining of a large number of MESFET oscillators that load a two-dimensional metal grid on a dielectric substrate. The frequency can be electrically tuned either with gate bias or with another array loaded with varactor diodes. When the varactor bias voltage is changed, the capacitance of the diodes changes, which in turn modulates the frequency of the output power-combined wave. Two types of arrays are presented, one consisting of short dipoles, and the other of bow-tie elements. As expected, the bow-tie VCO has better performance than the dipole VCO, due to its broadband impedance. A 10% tuning bandwidth with less than 2 dB power change was measured in the case of a bow-tie VCO     

Planar integration of a resonant-tunneling diode with pHEMT using anovel proton implantation technique

A novel technique of integrating resonant-tunneling diodes (RTDs) with pseudomorphic high-electron-mobility transistors (pHEMTs) is demonstrated. A proton was implanted through the pHEMT layers to convert the RTD structure underneath to a high-resistivity buffer without degrading the performance of the pHEMT. The cutoff frequency is 16 GHz for a 1.5-μm-gate-length pHEMT on such an implanted buffer. Substituting the conventional deep mesa etch with ion implantation maintains a highly planar surface. Such a monolithically integrated RTD/pHEMT oscillator is described     

Ka-Band Substrate IntegratedWaveguide Gunn Oscillator

Based on the substrate integrated waveguide (SIW) technology, a new type of Ka-band Gunn Diode Oscillator was developed. Main emphasis was placed on SIW resonant cavity structure. Restrictions on the performance of the oscillators imposed by packaged networks and the self-characteristic of the Gunn diode devices have been analyzed. This oscillator performance is characterized by a medium level output power of 15.2 dBm, a low phase noise less than -91.23 dBc/Hz at 100 kHz and frequency excursion 53 MHz over temperature range from 15degC to 70degC. It has some advantages such as planar integration, low cost, small size, good temperature-frequency stability, low phase noise.     

Microwave and millimeter-wave QWITT diode oscillators

The authors present DC, microwave, and millimeter-wave characteristics of different quantum-well-injection transit-time (QWITT) devices. Small-signal and large-signal device models are used to provide physical design parameters to maximize the output power density at any desired frequency of operation. A peak output power density of 3.5-5 kW/cm² in the frequency range 5-8 GHz has been obtained from a planar QWITT oscillator. This appears to be the highest output power density obtained from any quantum-well oscillator at any frequency. This result also represents the first planar circuit implementation of a quantum-well oscillator. Good qualitative agreement between DC and RF characteristics of QWITT devices and theoretical predictions based on small-signal and large-signal analyses is achieved. The device efficiency has been increased from 3% to 5% by optimizing the design of the drift region in the device through the use of a doping spike with optimized concentration, without compromising the output power at X -band. Self-oscillating QWITT diode mixers are also demonstrated at X-band in both waveguide and planar circuits. The self-oscillating mixer exhibits a conversion gain of about 10 dB in a narrow bandwidth and a conversion loss of about 5 dB if broadband operation is desired     

Modified optical frequency domain reflectometry with high spatialresolution for components of integrated optic systems

An apparatus which allows detection of scatterers and faults as well as measurement of reflections in fiber or integrated optic devices and systems with a spatial resolution in the region of 10-100 μm is discussed. The dynamic range is sufficient to detect reflection with a reflection coefficient down to 10^-10. The system uses a modified optical frequency domain reflectometry (OFDR) technique whereby signal light and local oscillator light are coupled into the waveguide under test from opposite directions. The measurement principle requires the wavelength of the light source to be swept continuously up or down. It is shown that the experimental relationship between frequency shift and waveguide length is in fairly good agreement with the theoretical estimate. Polarization-sensitive experimental results are given for reflection factors in short, side-polished polarization-maintaining fibers